2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES z High breakdown voltage. (BVCEO = -120V) z Complements the 2SC4102 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC Collector Dissipation 100 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 μA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range Marking VCE(sat) Cob JinYu 560 IC=-10mA,IB=-1mA -0.5 V VCE=-12V,IC=-2mA,f=30MHz 140 MHz VCB=-12V,IE=0,f=1MHz 3.2 pF hFE R S 180-390 270-560 RR RS １ semiconductor 180 www.htsemi.com 2SA1 57 9 Typical Characteristics ２ JinYu semiconductor www.htsemi.com