MMBT3904 TRANSISTOR(NPN) FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM (1)B (2)E MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance From Junction toAmbient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 50 nA IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC= 50mA 60 hFE(3) VCE=1V, IC= 100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Emitter cut-off current DC current gain 400 Transition frequency fT VCE=20V, IC=10mA,f=100MHz Delay Time td VCC=3V,VBE=-0.5V 35 nS Rise Time tr IC=10mA, IB1=-IB2=1.0mA 35 nS Storage Time ts VCC=3V,IC=10mA, 200 nS Fall Time tf IB1=-IB2=1mA 50 nS CLASSIFICATION OF Rank Range 300 MHz hFE(1) O Y G 100-200 200-300 300-400 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT3904 Static Characteristic Ta=100℃ 400uA 350uA 60 300uA 250uA 200uA 40 IC —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 450uA 80 hFE 400 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 100 150uA 300 Ta=25℃ 200 100 100uA 20 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 0.3 IC VBEsat 1.2 30 10 3 COLLECTOR CURRENT (V) IC 100 (mA) IC —— 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 0 0.1 20 Ta=100℃ 100 Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 0.0 1 10 3 COLLECTOR CURRENT IC 100 100 30 IC 200 (mA) 10 100 30 COLLECTOR CURRENT VBE —— 3 1 Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ 30 Cob Ta=100℃ CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=1V 10 3 Ta=25℃ 1 3 Cib 0.3 0.1 0.0 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 300 —— 1 0.3 IC Pc 300 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— V 20 (V) Ta VCE=20V o Ta=25 C COLLECTOR POWER DISSIPATION Pc (mW) TRANSITION FREQUENCY fT (MHz) 300 (mA) 200 100 250 200 150 100 50 0 1 3 10 COLLECTOR CURRENT 30 IC 60 (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 150