Tel: 0755-83264115 Fax:0755-83955172 URL: http://w.ww.qsdaz.com http://www.qsdaz.com CHENMKO ENTERPRISE CO.,LTD 2SB772PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.) SC-62/SOT-89 * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. 1.6MAX. 4.6MAX. 0.4+0.05 1.7MAX. 2.5+0.1 0.8MIN. MARKING +0.08 0.45-0.05 * hFE Classification Q: Q72 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 P: 772 4.6MAX. CONSTRUCTION * PNP Switching Transistor E: E72 1 1 Base 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-62/SOT-89 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Open Emitter VCBO - -40 Volts Collector - Emitter Voltage Open Base VCEO - -30 Volts Emitter - Base Voltage Open Collector VEBO - -5 Volts IC - -3 Amps RATINGS Collector - Base Voltage CONDITION Collector Current DC Peak Collector Current ICM - -3 Amps Peak Base Current IBM - -0.5 Amps PTOT - 1500 mW TSTG -55 +150 o C C C Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-8 www.qsdaz.com RATING CHARACTERISTIC CURVES ( 2SB772PT ) o CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=-30V CONDITION ICBO - - -1.0 uA Emitter Cut-off Current IC=0; VEB=-3V IEBO - - -1.0 uA DC Current Gain VCE=-2V; Note 1 IC=-0.02A IC=-1.0A; Note 2 hFE 30 100 160 500 Collector-Emitter Saturation Voltage IC=-2A; IB=-0.2A VCEsat - -0.3 -0.5 Volts Base-Emitter Saturatio Voltage IC=-2A; IB=-0.2A VBEsat - -1.0 -2.0 Volts Collector Capacitance IE=ie=0; VCB=-10V; f=1MHz CC - 55 - pF Transition Frequency IC=-0.1A; VCE=-5.0V; f=100MHz fT - 100 - MHz SYMBOL MIN. TYPE MAX. UNITS SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS CONDITION OUTPUT IB2 INPUT Storage Time IB1 20uSec Fall Time IB2 30 ohmS Turn-on Time -IB1=IB2=0.05A Duty cycle<1% IB1 -30V Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500. ton - 0.1 - uSec ts - 1.0 - uSec tf - 0.1 - uSec www.qsdaz.com RATING CHARACTERISTIC CURVES ( 2SB772PT ) Typical Electrical Characteristics Figure 2. Cutoff Frequency - IC 3000 3000 1000 1000 V CE =-5V CUTOFF FREQUENCY (MHz) COLLECTOR CAPACITANCE CC (pF) Figure 1. CC - Reverse VCB 100 10 1 -0.1 -0.3 -1.0 -3.0 -10 -30 100 10 1 -1 -100 -10 COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB (V) COMMON EMITTER V CE =-2V DC CURRENT GAIN hFE 500 300 100 50 30 COLLECTOR POWER DISSIPATION PC (W) 1.5 1000 1.4 (1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink (1) 1.2 1.0 0.8 (2) 0.6 0.4 0.2 0 10 -10 -30 -100 -300 -1000 0 -3000 20 40 Figure 5. VCE(sat) - IC 80 100 120 140 160 Figure 6. VBE(sat) - IC -1 -10 COMMON EMITTER BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 60 AMBIENT TEMPERATURE T A ( OC) COLLECTOR CURRENT I C (mA) I C /I B =10 -0.3 -0.1 -0.05 -0.03 -0.01 -10 -1000 Figure 4. PC - TA Figure 3. hFE - IC -0.5 -100 COLLECTOR CURRENT I C (mA) -30 -100 -300 COLLECTOR CURRENT I C (mA) -1000 -3000 COMMON EMITTER -5 I C /I B =10 -3 -1 -0.5 -0.3 -0.1 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -1000 -3000 www.qsdaz.com RATING CHARACTERISTIC CURVES ( 2SB772PT ) Typical Electrical Characteristics Figure 9. Safe Operation Area COLLECTOR CURRENT IC (mA) -30000 -10000 1 mS -5000 -3000 100 mS -1000 -500 -300 -100 -50 -30 -10 -0.1 1S Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate -0.3 -1.0 -3.0 -10 -30 COLLECTOR-EMITTER VOLTAGE V CE (V) -100