ETC DFA150AA160

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Fax:0755-83955172
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THREE PHASE DIODE+THYRISTOR
DFA150AA80/160
SanRex Power Module, DFA150AA, is complex isolated
module which is designed for rash current circuit.
108
93±0.
3
22 15.
22
13.
5 20
5
M4
8
depth 10mm 12
configuration, and a thyristor connected to a direct current line.
Module is designed very compactly. Because
G
diode module and thyristor put together.
● This
Module is also isolated type between electorode
R2
G
terminal and mounting base. So you can put this
6-M6
depth 10mm +
−
+
R
T
S
22
T
22
Module and other one together in a same fin.
21
28.
5
7
27±0.
3
4
∼
(Application)
● Inverter for AC or DC motor control, Current stabilized
4-φ5.8
−
S
R
28
+
R2
24.
5
● This
R2
18 23
48.
0±0.
3
62
It contains six diodes connected in a three phase bridge
∼
∼
power supply, Switching power supply.
Unit:㎜
−
●DIODE
■Maximum Ratings
Symbol
(Tj=25℃ unless otherwise specified)
Item
Ratings
DFA150AA80
DFA150AA160
Unit
VRRM
Repetitive Peak Reverse Voltage
800
1600
V
VRSM
Non-Repetitive Peak Reverse Voltage
960
1700
V
Symbol
Item
Conditions
ID
Output Current (D.C.)
Three phase full wave, Tc=93℃
IFSM
Surge forward current
1cycle, 50/60HZ, peak value, non-repetitive
Ratings
Unit
150
A
1460/1600
A
Operating Junction Temperature
−40 to +150
℃
Tstg
Storage Temperature
−40 to +125
℃
VISO
Isolation Breakdown Voltage (R.M.S.)
2500
V
Tj
Mounting
Torque
A.C. 1minute
Mounting(M5)
Recommended Value 1.5-2.5(15-25)
2.7(28)
Terminal(M6)
Recommended Value 2.5-3.9(25-40)
4.7(48)
Terminal(M4)
Recommended Value 1.0-1.4(10-14)
1.5(15)
Mass
Typical Value
N・m
(kgf・B)
460
g
Ratings
Unit
■Electrical Characteristics
Symbol
Item
IRRM
Repetitive Peak Reverse Current,max.
Tj=150℃,VR=VRRM
15
mA
VFM
Forward Voltage Drop,max.
IF=150A,Inst. measurement
1.35
V
Rth(j-c) Thermal Impedance, max.
Junction to Case(TOTAL)
0.14
℃/W
Rth(c-f) Thermal Impedance, max.
Case to fin
0.07
℃/W
SanRex
Conditions
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
DFA150AA80/160
●THYRISTOR
■Maximum Ratings
Symbol
(Tj=25℃ unless otherwise specified)
Ratings
Item
DFA150AA80
DFA150AA160
Unit
VRRM
Repetitive Peak Reverse Voltage
800
1600
V
VRSM
Non-Repetitive Peak Reverse Voltage
960
1700
V
VDRM
Repetitive Peak off-State Voltage
800
1600
V
Symbol
Item
Conditions
Ratings
Unit
150
A
1460/1600
10670
A2S
IT(AV)
Average On-State Current
Singl phase half wave. 180°conduction, Tc=93℃
ITSM
Surge On-State Current
1cycle, 50/60HZ, peak value, non-repetitive
I2t
I2t(for fusing)
A
Critical Rate of Rise of On-State Current
IG=100mA,
VD=1/2VDRM,
di G /dt=0.1A/μs
150
A/μs
VISO
Isolation Breakdown Voltage (R.M.S.)
A.C. 1minute
2500
V
Tj
Operating Junction Temperature
−40 to +135
℃
Storage Temperature
−40 to +125
℃
di/dt
Tstg
Mounting
Torque
Mounting(M5)
Recommended Value 1.5-2.5(15-25)
2.7(28)
Terminal(M6)
Recommended Value 2.5-3.9(25-40)
4.7(48)
Terminal(M4)
Recommended Value 1.0-1.4(10-14)
1.5(15)
Mass
Typical Value
N・m
(㎏f・B)
460
g
■Electrical Characteristics
Symbol
Item
Conditions
Ratings
Unit
100
mA
IDRM
Repetitive Peak Off-State Current,max.
Tj=135℃,VD=VDRM
IRRM
Repetitive Peak Reverse Current,max.
Tj=135℃,VD=VRRM
100
mA
VTM
Peak On-State Voltage,max.
Tj=25℃,ITM=150A,
,Inst. measurement
1.35
V
IGT
Gate Trigger Current,max.
Tj=25℃,VD=6V,IT=1A
70
mA
VGT
Gate Trigger Voltage,max.
Tj=25℃,VD=6V,IT=1A
3
V
dv/dt
Critical Rate of Rise of OffState Voltage,min.
Tj=125℃,VD=2/3VDRM
500
V/μs
Rth(j-c) Thermal Impedance, max.
Junction to Case
0.21
℃/W
Rth(c-f) Thermal Impedance, max.
Case to fin
0.07
℃/W
500
Forward Current I(A)
F
DIODE Output Current vs. Power Dissipation
DIODE Maximum Forward Characteristics
Max.
200
100
50
T
j=25℃
20
10
0.
5
1.
0
1.
5
2.
0
Forward Voltage Drop V(V)
F
450
Power Dissipation Pav(W)
1000
2.
5
400
350
300
250
200
150
Three Phase
100
50
0
0
20
40
60
80
100
120
140
160
Output Current ID(A)
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
DIODE Output Current vs.
Allowable case Temperature
150
Surge Forward Current IFSM(A)
Three Phase
140
130
120
110
100
90
80
0
20
40
60
80
100
120
140
Surge Forward Current Rating
(Non-Repetitive)
1800
1600
Per one element
1400
1200
60Hz
1000
800
50Hz
600
S
i
ng
l
ephaseha
l
fwave
T
j=25℃ start
400
200
0
1
160
2
5
Transient Thermal Impedance θj-c(℃/W)
DIODE Transient Thermal Impedance
50
Junction to Case
ー5
5 10 2
5 10−1 2
ー4
5 10 2
5 100 2
Time t(sec)
ー3
5 10 2
5 101
20
Av
5
5 10
e ra
ge
Ga
2
te
Po
1
ak
Ga
te P
ow
e(
r1
0W
)
we
(
r3
W)
−10℃
0.
5
135℃
25℃
0.
1
10
ー2
Pe
Peak Forward Gate Voltage(10V)
10
0.
2
Maximum
20
Maximum Gate Non-Trigger Voltage
50 100 200
500 1000 2000
5000 10000
Gate Current(mA)
SCR Output Current vs. Power Dissipation
SCR Maximum Forward Characteristics
250
Max.
500
200
200
150
100
100
50
T
j=25℃
20
10
0.
5
1.
0
1.
5
2.
0
50
0
0
2.
5
20
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140 160 180
Output Current(A)
Transient Thermal Impedance θj-c(℃/W)
SCR Output Current vs.
Maximum Allowable case Temperature
40
60
80
100 120 140 160 180
Output Current(A)
On-State Voltage Drop VTM(V)
Maximam Allowable Case Temperature(℃)
100
Gate Characteristics
Power Dissipation Pav(W)
On-State Peak Current I(A)
T
1000
50
100
Gate Voltage(V)
100
5
2
10−1
5
2
10−2
5
2
10−3
5
2
10−4
5
2
10−5 ー6
10 2
10−2 2
20
10
Time(Cycles)
Output Current ID(A)
Peak Gate Current(3A)
Allowable Case Temperature Tc(℃)
DFA150AA80/160
SCR Transient Thermal Impedance
100
5
2
10−1
5
2
10−2
5
2
10−3
5
2
10−4
5
2
10−5 ー6
10 2
10−2 2
Junction to Case
Maximum
5 10ー5 2
5 10−1 2
5 10ー4 2
5 100 2
Time t(sec)
5 10ー3 2
5 101
5 10ー2
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]