MB39C602
高功率,高功率因数LED驱动IC
概要
MB39C602是带反激式拓扑结构的开关调节控制器。
根据LED负载，通过控制开启时间的方法调节LED电流。MB39C602适合LED照明应用。
特性
应用
·高功率因数(>0.9)
·灯泡&灯管
·效率高(>85%)且EMI低
·筒灯&吸顶灯
·宽输入电压: 85VAC ~ 265VAC
·PWM调光LED照明
·封装SOP-8
应用框图
LED灯泡
LED灯管
PCB
Capacitor
AC line
PCB
Capacitor
Coil
LED
Capacitor Transformer Capacitor
AC line
SW
FET
SW
FET
LED
LED driver
LED driver
Photo Coupler
MB39C602
MB39C602
Non isolated type
Isolated
无线 + 调光解决方案
LED Bulb + ZigBee
LED驱动板
框图
LED Light Bulb
240VAC
dimming
Remote
Control
constant current
control(350mA)
MB39C602
LED Driver
5V
MB95560+ZigBee
Module
LED
(5-9*1W)
* MB95560 is 8bit MCU made in Fujitsu semiconductor.
规格&特性
效率
Efficiency[n]
fac=60Hz
MB39C602规格
fac=50Hz
100.0%
SW方法
持续通电运行、非持续模式的单级PFC和变压器零
电流检测。控制开关频率
SW FET
外部
结温
Tjmax = 125℃
SW频率
30kHz ~ 120kHz (最大值)
保护
欠压锁定(UVLO)、过压保护(OVP)、过温保护(OTP)
封装
SOP-8
95.0%
90.0%
n[%]
85.0%
80.0%
75.0%
70.0%
65.0%
60.0%
180
190
200
210
220
230
VIN_AC [V]
240
250
260
270
LED(10W)；9串/0.35A
功率因数
Power Factor[PF]
fac=60Hz
fac=50Hz
1
0.95
PF
0.9
SOP-8
3.9mm×5.05mm×1.75mm
(Pin pitch 1.27mm）
0.85
0.8
0.75
0.7
180
190
200
210
220
230
240
250
260
270
VIN_AC [V]
LED(10W)；9串/0.35A
网络设计仿真服务
Start URL: http://edevice.fujitsu.com/pmic/en-easy/
Circuit diagram & Parts selection
Simulation waveform
BOM List & Buy a part
富士通半导体(上海)有限公司
上海市浦东新区芳甸路1155号浦东嘉里城办公楼30层
邮编: 201204
电话: (86 21) 6146 3688
传真: (86 21) 6146 3660, 6146 3680
网址: http://cn.fujitsu.com/fss
北京: (86 10) 5969 1600
深圳: (86 755) 2583 0028
成都: (86 28) 8515 0023
西安: (86 29) 8799 8600
大连: (86 411) 3999 0600
厦门: (86 592) 210 5900
青岛: (86 532) 6887 7001
武汉: 027-8760-8760
新加坡: (65) 6281 0770
香港: (852) 2736 3232
台湾: (886 2) 2719 2011
FSS-MB39C602-201212SC
Landing Page
Demonstration Unit Manual
LED Control by
Smart Phone
MB39C602EVBSK-04
MB39C602-EVBSK(AC200V)
Rev 2.0
Jan. 2013
Fujitsu semiconductor limited confidential
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
1. Introduction
MB39C602-EVBSK-04 can control the on/off and dimming by
using Android Smart Phone. You can control the LED light by Bluetooth Chat
Appl which is free soft for Android Smart Phone.
LED load: 390mA / 9 pieces in series, Power: AC185V-240V
36V
390mA
AC Power
Supply
185V~240V
LED Driver
Dimming、
、ON/OFF
Control
Fujitsu semiconductor limited Confidential
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Smart Phone
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
2. Demonstration
1)
2)
3)
4)
Connect LED light to AC power (AC185V-240V).
The LED is shined.
Turn on the power of smart phone.
Start the Bluetooth Chat for Android smart phone.
Bluetooth Chat
5) Push menu button, and select “Connect a device”.
“Connect a device”
Menu button
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6) Select “ZEAL-C02 “ xx:xx:xx:xx:xx”, then the “Connected to ZEAL-C02”
message will appear.
“ZEAL-C02”
xx:xx:xx:xx:xx
“Connected to
ZEAL-C02”
message will
appear
7) Select character to number character by using below button.
The character is
changed to number
Character select
8) To change the brightness, please push 1 – 9 and 0 number. Then push
“Enter”.
Ex: Dimming 50%
1 - dimming 10%
2 - dimming 20%
|
|
9 - dimming 90%
0 - 100%
Fujitsu semiconductor limited Confidential
Ex: Dimming 90%
1
1
2
3
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Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9) To turn on or off, please push “*” or “#” button. Then push “Enter”.
Ex: power off
Ex: power on
* - power off
# - power on
1
1
2
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3. Specification
Ta = 25°
°C , fac=60Hz
ITEM
Voltage range (RMS)
VIN
Input current (RMS)
IIN
MIN
TYP
MAX
UNIT
185
220
240
VAC
53
19
27
mA
Output voltage
VOUT
31
V
Output load current
IOUT
390
mA
Output current ripple
Iripple
120
mApp
Switching frequency
fsw
90
kHz
Efficiency
η
87
%
Power Factor
pf
0.90
Ta = 25°
°C , fac=50Hz
ITEM
Voltage range (RMS)
VIN
Input current (RMS)
IIN
MIN
TYP
MAX
UNIT
185
220
240
VAC
51
Output voltage
VOUT
Output load current
IOUT
390
mA
Output current ripple
Iripple
128
mApp
Switching frequency
fsw
90
kHz
Efficiency
η
87
%
Power Factor
pf
0.92
Fujitsu semiconductor limited Confidential
19
5
27
mA
31
V
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
3-1 Output Ripple
3-2 Switching Waveform
Fig.3-1 Output Ripple
Fig.3-2 Switching Waveform
VIN=AC230VRMS, fac=60Hz
VIN=DC230V
LED ; 9 pieces in series
LED ; 9 pieces in series
3-3 Turn-On Waveform
3-4 TurnTurn-Off Waveform
VBULK
VDD
VO
ILED
Fig.3-3 Turn-On Waveform
Fig.3-4 Turn-Off Waveform
VIN=0V -> AC230VRMS(60Hz)
VIN=AC230VRMS(60Hz) -> 0V
LED ; 9 pieces in series
LED ; 9 pieces in series
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4. Demonstration Unit Detail
The following block diagram is the solution image.
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4-1. Circuit Diagram
Fig.4-1 Circuit Diagram
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4-2. Circuit Parts List
№
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
COMPONENT
BR1
C2
C3
C4, C16, C25, C31, C33
C5
C6, C7
C8
C9
C10, C15, C17, C18, C19
C11
C13
C21
C22, C32, C34
C23
C24
C26, C27, C28, C29, C30
D1
D3
D4
D5
D8
D9
23 F1
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
L1
L2, R34
L3
Q1
Q2
Q3, Q4
R1, R2, R31
R4
R11
R12
R13
R14
R15
R16
R17
R18, R41, R42, R43, R44,
R47, R48
R19
R23
R24, R35
R33
R26
R29
R30
R32
R39, R50
R36
R37, R45, R46
R38
R40
R49
T1
U1
U2
U5
U6
U7
VR1
BT1
DESCRIPTION
IC RECT BRIDGE 0.5A 600V 4SOIC
CAP CER 15000PF 250V X7R 1206
CAP CER 10000PF 50V X7R 0603
CAP CER .1UF 25V X7R 10% 0603
CAP 100UF 25V ELECT RADIAL 2.5MM
CAP CER 2.2UF 100V X7R 1210
CAP 1000UF 50V ELECT HE RADIAL
CAP .022UF/630VDC METAL POLY
CAP CER 10000PF 50V X7R 0603
CAP CER 2.2NF X1/Y1 RADIAL
CAP CER 0.33UF 16V X7R 0603
CAP .022UF/305VAC X2 METAL POLYPRO
CAP CER 1UF 25V X7R 10% 0603
CAP CER 820PF 50V X7R 0603
CAP CER 22000PF 50V X7R 0603
CAP CER 22uF 25V
DIODE ULTRA FAST 800V 1A SMA
DIODE ULTRA FAST 200V SOT-23
DIODE ZENER 18V 225MW SOT-23
DIODE GPP FAST 1A 600V DO-41
SHUNT REGULATOR 5.0V SOT-23
Schottky DIODE 30V 200mW SOD-523
Fuse,axial, fast acting, 2.5 A, 250V, 0.160 x 0.400
inch
IND COMMON MODE CHOKE 40MH
JUMPER (RES 0.0 OHM 1206)
IND 1.5uH 30%
MOSFET N-CH 650V 7.3A TO-220FP
Dual MOSFET N-CH
TRANSISTOR NPN GP 40V SOT23
RES 560K OHM 1/4W 1% 0805 SMD
RES 75.0K OHM 1/4W 1% 1210 SMD
Resistor, chip, 110KOhm, 1/8W, +/-1%, 0603
RES 33K OHM 1/10W 1% 0603 SMD
RES 39K OHM 1/10W 1% 0603 SMD
RES 620K OHM 1/10W 1% 0603 SMD
RES 100K OHM 1/10W 1% 0603 SMD
RES 5.1 OHM 1/10W 1% 0603 SMD
RES 3 OHM 1/8W 1% 0805 SMD
PART No.
MB6S
GRM31BR72E153KW01L
GRM188R71H103KA01D
GRM188R71E104KA01D
EKMG250ELL101MF11D
GRM32ER72A225KA35
EKMG500ELL102MK25S
ECQE6223KF
GRM188R71H103KA01D
DE1E3KX222MA4BL01
C0603C334K4RACTU
B32921C3223M
GRM188R71E105KA2D
GRM188R71H821JA1J
GRM188R71H223KA01D
C4532JB1E226M
RS1K-13-F
MMBD1404
BZX84C18LT1G
UF4005
LM4040C50IDBZT
BAT54XV2T1G
VENDOR
Fairchild
muRata
muRata
muRata
Nippon Chemi-con
muRata
Nippon Chemi-con
Panasonic
muRata
muRata
Kemet
Epcos
muRata
muRata
muRata
TDK
Diodes
Fairchild
On Semi
Fairchild
Texas Instruments
ON Semiconductor
Number
1
1
1
5
1
2
1
1
5
1
1
1
3
1
1
5
1
1
1
1
1
1
026302.5MXL
Littelfuse Inc
1
750311650
RK73Z2B
SLF6045T-1R5N4R0-3PF
SPA07N60C3
uPA2755
MMBT3904-TP
RK73H2ATTD5603F
RK73H2ETTD7502F
RK73H1JTTD1103F
RK73H1JTTD3302F
RK73H1JTTD3902F
RK73H1JTTD6203F
RK73H1JTTD1003F
RK73H1JTTD5R10F
RK73H2ATTD3R00F
Wurth
KOA
TDK
Infineon
Renesas Electronics
Micro Commercial
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
1
2
1
1
1
2
3
1
1
1
1
1
1
1
1
RES 10.0K OHM 1/10W 1% 0603 SMD
RK73H1JTTD1002F
KOA
7
RES .33 OHM 1/4W 1% 1206 SMD
RES 20K OHM 1/10W 1% 0603 SMD
RES 3K OHM 1/10W 1% 0603 SMD
RES 1.00M OHM 1/10W 1% 0603 SMD
RES 2.00K OHM 1/10W 1% 0603 SMD
RES 12K OHM 1/8W 1% 0805 SMD
RES 620K OHM 1/10W 1% 0603 SMD
RES 18K OHM 1/10W 1% 0603 SMD
RES 56K OHM 1/10W 1% 0603 SMD
RES 47K OHM 1/10W 1% 0603 SMD
RES 22K OHM 1/10W 1% 0603 SMD
RES 82K OHM 1/10W 1% 0603 SMD
RES 15K OHM 1/10W 1% 0603 SMD
RES 100K OHM 1/10W 1% 0603 SMD
TRANSFORMER FLYBACK EE20/10/6
IC PWM CTRLR CASCODE 8-SOIC
OPTO ISOLATOR TRANSISTOR OUTPUT
IC OPAMP GP R-R 1MHZ SGL SOT23-5
DCDC Converter
New8FX Micorcontroller
SUR ABSORBER 7MM 430V 1250A ZNR
Bluetooth Module
ERJ-8RQFR33V
RK73H1JTTD2002F
RK73H1JTTD3001F
RK73H1JTTD1004F
RK73H1JTTD2001F
RK73H1JTTD1202F
RK73H1JTTD6203F
RK73H1JTTD1802F
RK73H1JTTD5602F
RK73H1JTTD4702F
RK73H1JTTD2202F
RK73H1JTTD8202F
RK73H1JTTD1502F
RK73H1JTTD1003F
750811146
MB39C602
PS2561L-1-A
LMV321IDBVR
MB39A135
MB95F560
ERZ-V07D431
MBH7BTZ42
Panasonic
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
Wurth
Fujitsu
CEL
Texas Instruments
Fujitsu
Fujitsu
Panasonic
Fujitsu Component
1
1
2
1
1
1
1
1
2
1
3
1
1
1
1
1
1
1
1
1
1
1
Fig.4-2 Parts List
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Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. Microcontroller Software Reference
Caution:
This software is sample source code. It can’t promise for your products.
This is a project template for the MB95560 Series. It includes some basic settings for
e.g. Linker, C-Compiler which must be checked and modified in detail, corresponding
to the user application.
#include "mb95560.h"
unsigned char dimmer_status;
#define TX_BYTE_NUM
10
#define RX_BYTE_NUM
1
#define PWM_OFF PDR6_P64=0
#define PWM_ON PDR6_P64=1
#define LED_ON PDR6_P62=0
#define LED_OFF PDR6_P62=1
// UART TX Buffer
// UART Rx Buffer
// PWM Low I/O setting
// PWM High I/O setting
// LED ON I/O setting
// LED OFF I/O setting
unsigned char tx_data[TX_BYTE_NUM]={“slave 1 0¥r¥n"};
unsigned char tx_num;
unsigned char rx_num;
unsigned char on_data[RX_BYTE_NUM]={"#"};
unsigned char off_data[RX_BYTE_NUM]={"*"};
unsigned char dimmer0[RX_BYTE_NUM]={"0"};
unsigned char dimmer1[RX_BYTE_NUM]={"1"};
unsigned char dimmer2[RX_BYTE_NUM]={"2"};
unsigned char dimmer3[RX_BYTE_NUM]={"3"};
unsigned char dimmer4[RX_BYTE_NUM]={"4"};
unsigned char dimmer5[RX_BYTE_NUM]={"5"};
unsigned char dimmer6[RX_BYTE_NUM]={"6"};
unsigned char dimmer7[RX_BYTE_NUM]={"7"};
unsigned char dimmer8[RX_BYTE_NUM]={"8"};
unsigned char dimmer9[RX_BYTE_NUM]={"9"};
// Startup data
// tx number
// rx number
// on data
// off data
// dimmer 100%
// dimmer 10%
// dimmer 20%
// dimmer 30%
// dimmer 40%
// dimmer 50%
// dimmer 60%
// dimmer 70%
// dimmer 80%
// dimmer 90%
static void wait_1ms() {int i; for(i=0;i<36;i++);}
static void wait_2ms() {int i; for(i=0;i<73;i++);}
static void wait_3ms() {int i; for(i=0;i<108;i++);}
static void wait_4ms() {int i; for(i=0;i<144;i++);}
static void wait_5ms() {int i; for(i=0;i<180;i++);}
static void wait_6ms() {int i; for(i=0;i<216;i++);}
static void wait_7ms() {int i; for(i=0;i<252;i++);}
static void wait_8ms() {int i; for(i=0;i<288;i++);}
static void wait_9ms() {int i; for(i=0;i<324;i++);}
// wait 1ms
// wait 2ms
// wait 3ms
// wait 4ms
// wait 5ms
// wait 6ms
// wait 7ms
// wait 8ms
// wait 9ms
Description:
In this example, MCU works in asynchronous mode. After reset, MCU will send
“slave 1 0“ for the initial data of Bluetooth module to RS232 transceiver.
Then MCU feedback any bytes it received.
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The following source code is MCU initialization function.
void MCU_initialization()
{
__DI();
/*system clock*/
SYCC=0x00;
//MCLK = source clock = 8Mhz (Main CR)
/*IO port*/
AIDRL=0xFF;
PDR6_P64=1;
DDR6_P64=1;
//PWM I/O initialize
//Enable output
PDR6_P62=0;
DDR6_P62=1;
//LED ON/OFF I/O initialize
//Enable output
/*LIN UART configuration*/
SMR=0x05;
SSR=0x00;
BGR1 = 0x03;
BGR0 = 0x40;
SCR=0x15;
//Asynchronous mode, enable SOT output
//disable interrupts
// Reloadvalue = 0d832 = 0x340 (8MHz, 9600Baud)
// Reloadvalue = 0x340 = 0x03<<8 + 0x40 (8MHz,
9600Baud)
//No parity, 1 stop bit, 8bit, enable transmit
WDTC=0x35;
//Clear watch dog timer
InitIrqLevels();
__EI();
// initialize Interrupt level register and IRQ vector table
}
Description:
- System clock is 8MHz internal clock.
- PWM I/O, LED ON/OFF I/O initialize.
- UART I/O initialize.
Asynchronous mode, 9600Baud, No parity, 1 stop bit, 8bit enable transmit
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The following source code is main function for dimming and on/off.
void main()
{
MCU_initialization();
rx_num=TX_BYTE_NUM;
SSR_TIE=1;
dimmer_status=0;
while(1)
{
WDTC=0x35;
if(dimmer_status==0){
}else if(dimmer_status==1){
}else if(dimmer_status==2){
}else if(dimmer_status==3){
}else if(dimmer_status==4){
}else if(dimmer_status==5){
}else if(dimmer_status==6){
}else if(dimmer_status==7){
}else if(dimmer_status==8){
}else if(dimmer_status==9){
}else{
}
//MCU initialize function
//Transmit Bluetooth initial massage
//LED dimmer status initial
//Clear watch dog timer
PWM_OFF;
PWM_ON;
wait_2ms(); PWM_ON;
wait_8ms(); PWM_OFF;
wait_3ms(); PWM_ON;
wait_7ms(); PWM_OFF;
wait_4ms(); PWM_ON;
wait_6ms(); PWM_OFF;
wait_5ms(); PWM_ON;
wait_5ms(); PWM_OFF;
wait_6ms(); PWM_ON;
wait_4ms(); PWM_OFF;
wait_7ms(); PWM_ON;
wait_3ms(); PWM_OFF;
wait_8ms(); PWM_ON;
wait_2ms(); PWM_OFF;
wait_9ms(); PWM_ON;
wait_1ms(); PWM_OFF;
PWM_OFF;
}
}
Description:
- MCU initialize
- Transmit Bluetooth initial message
- Clear watch dog timer
- PWM dimming
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The following source code is RS232 interrupt function.
__interrupt void lin_uart_tx(void)
{
if(SSR_TDRE){
if(tx_num>=rx_num) {
tx_num=0; rx_num=0;
SCR_RXE=1; SSR_TIE=0; SSR_RIE=1;
}else{
RDR_TDR=tx_data[tx_num]; tx_num++;
}
}
}
__interrupt void lin_uart_rx(void)
{
SCR_CRE=1;
if(SSR_RDRF){ tx_data[rx_num]=0; rx_num++;
if(rx_num>=RX_BYTE_NUM){
SCR_TXE=1; SSR_TIE=1; SSR_RIE=0;
}
if(RDR_TDR==on_data[0]){
LED_ON;
}else if(RDR_TDR==off_data[0]){
LED_OFF;
}else if(RDR_TDR==dimmer0[0]){
LED_ON; dimmer_status=0;
}else if(RDR_TDR==dimmer1[0]){
LED_ON; dimmer_status=1;
}else if(RDR_TDR==dimmer2[0]){
LED_ON; dimmer_status=2;
}else if(RDR_TDR==dimmer3[0]){
LED_ON; dimmer_status=3;
}else if(RDR_TDR==dimmer4[0]){
LED_ON; dimmer_status=4;
}else if(RDR_TDR==dimmer5[0]){
LED_ON; dimmer_status=5;
}else if(RDR_TDR==dimmer6[0]){
LED_ON; dimmer_status=6;
}else if(RDR_TDR==dimmer7[0]){
LED_ON; dimmer_status=7;
}else if(RDR_TDR==dimmer8[0]){
LED_ON; dimmer_status=8;
}else if(RDR_TDR==dimmer9[0]){
LED_ON; dimmer_status=9;
}
}
}
//set register
//clear error flag
//set register
//set dimmer status
Description:
- RS232 register setting
- LED dimming status setting
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6. Android Appl Reference
Caution:
We can’t support about these information. If you need more information for Android
Appl, you have to check it yourself on http://developer.android.com/index.html.
6-1. Setup development tools
STEP.1 Android SDK install
STEP.2 JDK install
STEP.3 Eclipse install
[STEP.1] Android SDK install
Please access the following URL.
Android SDK
http://developer.android.com/intl/ja/sdk/index.html
Please install it according to contents.
[STEP.2] JDK install
Please access the following URL.
ORACLE「Java SE DOWNLOAD」
http://www.oracle.com/technetwork/java/javase/downloads/index.html
Please install it according to contents.
[STEP.3] Eclipse install
Please access the following URL.
Eclipse
http://eclipse.org/
Please install it according to contents.
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6-2. Compile Bluetooth Chat Appl
1. Start “Eclipse”.
2. Select [File(F)] menu -> [New(N) -- [Project(P)].
3. Select “Android Sample Project”.
4. Select your “Android Target version”.
5. Select “BluetoothChat”.
6. Execute “BluetoothChat” Project.
7. If Android GUI is automatically appeared on your PC, it is completed.
8. Please move the “BluetoothChat.apk” on ¥¥android¥BluetoothChat¥bin folder to
your SmartPhone.
9. Please install “BluetoothChat.apk” on your SmartPhone.
Fujitsu semiconductor limited Confidential
15
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Fujitsu semiconductor limited Confidential
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Copyright 2012 FUJITSU SEMICONDUCTOR LIMITED
Fujitsu Semiconductor Design (Chengdu) Co. Ltd.
User Manual
ANA-UM-500001-E-10
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MB39C602 LED LIGHTING
SYSTEM
BULB 9W
ZIGBEE CONTROL
USER MANUAL
MB39C601 LED LIGHTING SYSTEM BULB 9W ZIGBEE CONTROL
Revision History
Date
Updated by
Approved by
Modifications
1.0.0
2012-8-17
Denny Deng
First Draft
1.1.0
2012-11-1
Allen Zhao
Second Draft
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Version
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Specifications are subject to change without notice. For further information please contact each office.
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All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely
for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU
SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When
you develop equipment incorporating the device based on such information, you must assume any responsibility arising
out of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as
license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of
FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of
any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR
assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would
result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or
damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the
regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Copyright © 2012 Fujitsu Semiconductor Design (Chengdu) Co. Ltd. All rights reserved.
ANA-UM-500001-E-10 Page 2
MB39C601 LED LIGHTING SYSTEM BULB 9W ZIGBEE CONTROL
1 Introduction
1.1
Purpose
This user manual describes how to use the demo, which is the LED bulb 9W with zigbee
control dimming. With zigbee wireless controling, we can adjust the brightness of the LED
bulb. Demo can support simultaneously or separately adjust the brightness of the two LED
bulbs. The AC input rang is from 85VAC to 265VAC. LED load: 300mA / 9 pieces in series.
1.2
Reference Documents
ANA-UM-500002-E-10-LED_Driver_Board-Bulb_9W_PWM-Dimming;
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MB39C602 Datasheet
ANA-UM-500001-E-10 Page 3
MB39C601 LED LIGHTING SYSTEM BULB 9W ZIGBEE CONTROL
2 Overview and Features
2.1
Overview
The LED Driver use MB39C602 as controller IC. And MB39C602 is a flyback type switching
regulator controller IC. The LED current is regulated by controlling the switching on-time or
controlling the switching frequency, depending on the LED load. It is most suitable for the general
lighting applications, for example residencial LED lighting.
The MB95560H is general-purpose, single-chip microcontrollers. In addition to a compact instruction
set, the microcontrollers of these series contain a variety of peripheral resources.
Features
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MB95560H:
・F2MC-8FX CPU core
・Clock
・Timer
・LIN-UART
・External interrupt
・8/10-bit A/D converter
・Low power consumption (standby) modes
・I/O port
・On-chip debug
・Hardware/software watchdog timer
・Power-on reset
・Low-voltage detection reset circuit
・Clock supervisor counter
・Dual operation Flash memory
・Flash memory security function
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MB39C602:
・High power factor in Single Conversion
・High Efficiency
・High Performance flyback converter.
・Worldwide AC input (85V-265V) and use Zigbee module as dimmer
・Low EMI switching topology
・Suitable for LED lighting application (3W-25W).
・Built-in under voltage lock out function
・Built-in over load protection function
・Built-in over voltage protection function
・Built-in over temperature protection function
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2.2
ANA-UM-500001-E-10 Page 4
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PWM(0V-5V) Input
zigbee receiver
zigbee remote
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controller
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS405-00010-1v0-E
ASSP
High Power Factor LED Driver IC for
LED lighting
MB39C602
DESCRIPTION
MB39C602 is a flyback type switching regulator contorller IC. The LED current is regulated by controlling
the switching on-time depending on the LED load.
It is most suitable for the general lighting applications, for example stocks of commercial and residential
light bulbs and so on.
FEATURES
High power factor in Single Conversion
Helps to achieve high efficiency and low EMI by detecting auxiliary transformer zero current
Switching frequency setting depend on the FC pin current : 30 kHz to 120 kHz
Control of the current of Primary Winding without the external sense resistor
Built-in under voltage lock out function
Built-in output over voltage protection function
Built-in over temperature protection function
Input voltage range VDD
: 9V to 20V
Input voltage range for LED lighting applications : AC110VRMS, AC230VRMS
Package
: SOP-8 (3.9mm × 5.05mm × 1.75mm [Max])
APPLICATIONS
LED lighting
PWM dimmable LED lighting
etc.
Power Supply online Design Simulation
Easy DesignSim
This product supports the web-based design simulation tool.
It can easily select external components and can display useful information.
Please access from the following URL.
http://edevice.fujitsu.com/pmic/en-easy/?m=ds
Copyright©2012 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2012.12
FUJITSU SEMICONDUCTOR CONFIDENTIAL
MB39C602
PIN ASSIGNMENT
(TOP VIEW)
FC
1
8
VDD
ZCD
2
7
GND
CL
3
6
DRN
OTC
4
5
VCG
(FPT-8P-M02)
PIN DESCRIPTIONS
Pin No.
Pin Name
I/O
Description
1
FC
I
Switching frequency setting pin.
2
ZCD
I
Transformer auxiliary winding zero current detecting pin.
3
CL
I
Pin for controlling peak current of transformer primary winding.
4
OTC
I
On-time control pin.
5
VCG
-
External MOSFET gate bias pin.
6
DRN
O
External MOSFET source connection pin.
7
GND
-
Ground pin.
8
VDD
-
Power supply pin.
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DS405-00010-1v0-E
MB39C602
BLOCK DIAGRAM
CBULK
Rst
1
13V
Fault Latch
1
VVDD
Switch
VVCG
LDO
VVCG
Shunt
10V/6V
VDD
UVLO
8
Co
VCG
5
14V
1
HS
Drive
2
CVCG
2V
CVDD
Enable
PWM
10V/8V
IFC
FC
IFC
1
1
1
DRN
6
Freq. Modulator
D1
1/tSW
DBIAS
IFC
Enable
PWM
D
Q
VGATE
Current
Sense
Q
Zero Current
Detect
ZCD
2
Driver
20mV
OV
Fault
GND
1
7
5V
1
On-Time Modulation
Discharge
IOTC
Fault Timing
and Control
VGATE
Fault
3V
1V
OTC
4
Shutdown
and Restart
Current
Sence
Fault Latch
Reset
UVLO
Thermal
Shutdown
CL
3
RCL
1
MB39C602
2
Vs
1
Rs
1
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2
2
3
MB39C602
ABSOLUTE MAXIMUM RATINGS
Parameter
Power supply voltage
Input voltage
Input current
Symbol
Storage temperature
Rating
Min
Max
Unit
VVDD
VDD pin
-0.3
+25.0
V
VDRN
DRN pin
-
20
V
VVCG
VCG pin
-0.3
+16.0
V
VZCD
ZCD pin
-0.3
+6.0
V
VOTC
OTC pin
-0.3
+6.0
V
VCL
CL pin
-0.3
+6.0
V
VFC
FC pin
-0.3
+2.0
V
IVCG
VCG pin
-
10
mA
IOTC
OTC pin
-1
0
mA
ICL
CL pin
-1
0
mA
IFC
FC pin
0
1
mA
IDRN
DRN pin
-
800
mA
IDRN
DRN pin,
Pulsed 400ns, 2% duty cycle
-1.5
+6.0
A
-
800*
mW
-55
+125
°C
Output current
Power dissipation
Condition
PD
Ta +25°C
TSTG
*: The value when using two layers PCB.
Reference: θja (wind speed 0m/s): +125°C/W
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
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DS405-00010-1v0-E
MB39C602
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Value
Min
Typ
Max
Unit
VDD pin input voltage
VDD
VDD pin
9
-
20
V
VCG pin input voltage
VCG
VCG pin (from low-impedance
source)
9
-
13
V
VCG pin input current
IVCG
VCG pin (from high-impedance
source)
10
-
2000
µA
OTC pin resistance to GND
ROTC
OTC pin
25
-
100
kΩ
CL pin resistance to GND
RCL
CL pin
24.3
-
200.0
kΩ
ZCD pin resistance to
auxiliary winding
RZCD
ZCD pin Transformer auxiliary
winding connection resistor
50
-
200
kΩ
VCG pin capacitance to
GND
CVCG
VCG pin
33
-
200
nF
VDD pin bypass capacitance
CBP
Ceramic capacitance to set between
VDD and GND pin
0.1
-
1.0
µF
Operating ambient
temperature
Ta
-
-40
+25
+85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device's electrical characteristics are warranted when the device
is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
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5
MB39C602
ELECTRICAL CHARACTERISTICS
Symbol
Pin
No.
VCG (OPERATING)
5
VCG (DISABLED)
5
ΔVCG
5
IVCG (SREG)
5
VCG Shunt Load
Regulation
VCG LDO regulation
voltage
VCG LDO Dropout
voltage
UVLO Turn-on
threshold voltage
UVLO Turn-off
threshold voltage
UVLO hysteresis
VDD switch
on-resistance
Fault Latch Reset
VDD voltage
Minimum switching
period
Maximum switching
period
ΔVCG (SREG)
5
VCG (LREG)
5
VCG (LREG, DO)
Parameter
VCG voltage
(Operating)
VCG voltage (Disable)
VCG voltage
difference
VCG Shunt input
current
VDD and VCG
SUPPLY
MODULATION
DRIVER
Condition
(Ta = +25°C, VVDD = 12V)
Value
Unit
Min Typ Max
VVDD=14V,
IVCG=2.0mA
VOTC=0V, IVCG=26μA
VCG (DISABLED) VCG (OPERATING)
VVCG=VCG (DISABLED)100mV,
VOTC=0V
VOTC=0V,
26μA<IVCG≤5mA
13
14
15
V
15
16
17
V
1.75
2.00
2.15
V
-
12
26
μA
-
125
200
mV
VVDD=20V, IVCG=-2mA
-
13
-
V
-
VDD-VCG, VVDD=11V,
IVCG=-2mA
-
2.0
2.8
V
VDD (ON)
8
-
9.7
10.2
10.7
V
VDD (OFF)
8
-
7.55
8.00
8.50
V
ΔVDD (UVLO)
8
1.9
2.2
2.5
V
RDS, ON (VDD)
6,8
-
4*
10*
Ω
5.6
6.0
6.4
V
VDD (ON) - VDD (OFF)
VVCG=12V, VVDD=7V,
IDRN=50mA
VDD (FAULT RESET)
8
tSW (HF)
6
IFC=5μA
7.215 7.760 8.305
μs
tSW (LF)
6
IFC= 165μA
31.5* 35.0* 38.5*
μs
DRN peak current
IDRN (peak)
6
6
IFC=5μA, ICL=100μA
IFC=5μA, ICL=30μA
-
3*
1*
-
A
A
Minimum peak current
for RCL open
IDRN (peak, absmin)
6
RCL=OPEN
-
0.45*
-
A
ILIM blanking time
tBLANK (ILIM)
6
-
400*
-
ns
CL voltage
FC voltage
Driver on-resistance
Driver off leakage
current
High-side driver
on-resistance
VCL
VFC
RDS (on) (DRN)
3
1
6,7
IFC=5μA, RCL=100kΩ,
1.2A pull-up on DRN
IFC=5μA
IFC=10μA
IDRN=4.0A
IDRN (OFF)
6,7
VDRN=12V
RDS (on) (HSDRV)
5,6
DRN discharge current
IDIS
6,7
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-
High-side driver
current = 50mA
VDD=OPEN,
DRN=12V,
Fault latch set
2.94 3.00 3.06
0.34 0.70 0.84
200* 400*
V
V
mΩ
-
1.5
20.0
μA
-
6*
11*
Ω
2.38
3.40
4.42
mA
DS405-00010-1v0-E
MB39C602
Parameter
Zero current threshold
voltage
Clamp voltage
Start timer operation
TRANSFORMER
threshold voltage
ZERO CURRENT
Driver turn-on Delay
DETECTION
time
Wait time for zero
current detection
Start timer period
OVP threshold voltage
OVERVOLTAGE
OVP blanking time
FAULT
Input bias current
Shutdown Threshold
voltage
SHUTDOWN
THRESHOLD
Shutdown OTC
current
MAXIMUM ON
ON-Time
TIME
OTC voltage
Shutdown temperature
OTP
POWER SUPPLY
CURRENT
Pin
No.
Condition
VZCD (TH)
2
-
VZCD (CLAMP)
2
IZCD=-10μA
VZCD (START)
2
-
tDLY (ZCD)
6
tWAIT (ZCD)
6
tST
VZCD (OVP)
tBLANK, OVP
IZCD (bias)
6
2
6
2
VZCD=0V
VOTC (Vth)
Symbol
Value
Unit
Min Typ Max
5*
20*
50*
mV
-200 -160 -100
mV
0.10
0.15
0.20
V
-
150
-
ns
-
2.0
2.4
2.8
μs
VZCD=5V
150
4.85
0.6
-0.1
240 300
5.00 5.15
1.0
1.7
0
+0.1
μs
V
μs
μA
4
OTC=
0.7
1.0
1.3
V
IOTC, PU
4
VOTC= VOTC (vth)
-600 -450 -300
μA
tOTC
VOTC
TSD
6
4
-
3.4
3.8
4.2
2.7
3.0
3.3
- +150* -
μs
V
°C
Hysteresis
TSD_HYS
-
Power supply current
IVDD (STATIC)
IVDD (OPERATING)
8
8
Power supply current
for UVLO
IVDD (UVLO)
8
ROTC=76kΩ
Tj, temperature rising
Tj, temperature
falling,degrees below
TSD
VVDD=20V, VZCD=1V
VVDD=20V
VVDD= VDD (ON) 100mV
150Ω pull-up 12V on
DRN
-
+25*
-
°C
1.36
-
1.80
3.0*
2.34
3.7*
mA
mA
-
285
500
uA
*: Standard design value
DS405-00010-1v0-E
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FUJITSU SEMICONDUCTOR CONFIDENTIAL
7
MB39C602
FUNCTION EXPLANATION
(1) LED Current Control Function
MB39C602 is a flyback type switching regulator controller. The LED current is regulated by controlling the
switching on-time depending on the LED load.The LED current is converted into detecting voltage (Vs) by
sense resistor (Rs) connected in series with LED. Vs is compared by an external error amplifier (Err
AMP).When Vs falls below a reference voltage, Err AMP output rises and the current that flows into the
Opto-Coupler is decreased.
The OTC pin current is controlled via the Opto-Coupler in the on-time control block. In on-time control, it
controls on-time at OTC pin current. So, on-time increases when the current of the OTC pin decreases. And
the average current supplied to LED is regulated, because on-time is regulated at the constant switching
frequency.
(2) Cascode Switching
The switch in Primary Winding is a cascode connection.The gate of external MOSFET is connected with
the VCG pin, and the source is connected with the drain of internal Driver MOSFET. When the swich is
on-state, internal Driver MOSFET is turned on, HS Driver MOSFET is turned off, and the source voltage of
external MOSFET goes down to GND. For this period the DC bias is supplied to the gate of external
MOSFET from the VCG pin. Therefore external MOSFET is turned on.
When the switch is off-state, internal Driver MOSFET is turned off, HS Driver MOSFET is turned on, and
the source voltage of external MOSFET goes up to VCG voltage. For this period the DC bias is supplied to
the gate of external MOSFET from the VCG pin. Therefore external MOSFET is turned off. Moreover, the
current flowing into internal Driver MOSFET is equal to the current of Primary Winding. Therefore, the
peak current into Primary Winding can be detected without the sense resistor.
(3) Natural PFC (Power Factor Correction) Function
In the AC voltage input, when the input current waveform is brought close to the sine-wave, and the phase
difference is brought close to Zero, Power Factor is improved. In the flyback method operating in
discontinuous conduction mode, when the input capacitance is set small, the input current almost becomes
equal with peak current (IPEAK) of Primary Winding.
I PEAK =
(
VBULK t ON
LMP
)
=
(( ))
VBULK
LMP
tON
VBULK : Supply voltage of Primary Winding
LMP
: Inductance of Primary Winding
tON
: On-time
In on-time control, if loop response of Error Amp. is set to lower than the AC frequency (below 1/10 of the
AC frequency), on-time can be constant. Therefore, input current is proportional to input voltage, so Power
Factor is regulated.
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DS405-00010-1v0-E
MB39C602
(4) Power-Up Sequencing
When the voltage is input to VBULK, the electric charge is charged to capacitance of the VCG pin (CVCG)
through starting resistor (Rst). So, the voltage of the VCG pin rises. The voltage of the DRN pin rises by
source follower when the voltage of the VCG pin reaches the threshold voltage of the external
HVMOSFET.
The DRN pin is connected with the VDD pin through the internal VDD Switch, and VDD capacitor
(CVDD) is charged from the DRN pin. When the voltage at the VDD pin reaches the threshold voltage of
UVLO, the VDD Switch is turned off, and the internal Bias circuit operates, and the switching is started.
After the switching begins, the voltage at the VDD pin is supplied from Auxiliary Winding through the
external diode (DBIAS). The voltage of an Auxiliary Winding is decided by rolling number ratio of
Auxiliary Winding and Secondary Winding, and the voltage of Secondary Winding. Therefore, the voltage
at the VDD pin is not supplied, until the voltage of Auxiliary Winding rises more than the voltage at the
VDD pin. In this period, it is necessary to set the capacitor of the VDD pin to prevent the voltage of the
VDD pin from falling below the threshold voltage of UVLO.
The external Schottky diode (D1) is required between the DRN pin and VDD pin. This diode is used to
prevent the current that flows through the body diode of the VDD Switch.
Current Passing When Starting
VBULK
Rst
Primary
Winding
Ist
HV-MOSFET
CVCG
D1
VDD Start-up Current
CVDD
DBIAS
VDD Operating and LPM Current
VDD
Auxiliary
Winding
VCG
8
5
VDD
Switch
HS
Drive
VCG
Shunt
UVLO
10V/8V
Enable
PWM
14V
DRN
6
2V
Fault
Driver
PWM
Control
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7
GND
9
MB39C602
Power-Up Sequencing
VAC
VLED
UVLO threshold 10V
VDD
VCG
UVLO threshold 8V
DRN
(5) Power Down Sequencing
When AC power is removed from the AC line, the current does not flow to Secondary Winding even if HV
MOSFET is switching. The LED current is supplied from the output capacitance and decreases gradually.
Similarly, the voltage at the VDD pin decreases because the current does not flow into Auxiliary Winding.
The switching stops and MB39C602 becomes shutdown when the voltage at the VDD pin falls below the
threshold voltage of UVLO.
Power Down Sequencing
VAC
VLED
VDD
UVLO threshold 8V
VCG
DRN
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MB39C602
(6) OTC Part
It is set on-time by connecting resistance (ROTC) with OTC pin.
As shown in following figure, the on-time can be controlled by connecting the collector of the
Opto-Coupler through resistor from OTC.
OTC pin Control
On-Time Modulation
Fault Timing
and Control
VGATE
IOTC
Fault
3V
1V
OTC
Shutdown
and Restart
4
UVLO
Fault Latch
Reset
Thermal
Shutdown
R OTC
The following figure shows how the on-time is programmed over the range of between 1.5μs and 5.0μs for
either range of programming resistors. On-time is related to the programmed resistor based on the following
equations.
ROTC = tOTC × (2 × 1010
[
Ω
S
])
tOTC - Constant On-Time [μs]
On-time Setting Range
5.0
1.5
30
100
ROTC - Constant On-Time Resistance [kΩ]
Moreover, it can be shutted down by making the voltage of the OTC pin below "VOTC (Vth) (typ 1V)".
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11
MB39C602
(7) CL Part
It is set the peak current of Primary Winding by connecting resistance with CL pin.
The maximum peak current of Primary Side is set by connecting resistance (RCL) between the CL pin and
GND.
IDRN(pk) = (
100kV
)
RCL
An about 400ns blanking time of the beginning of switching cycle is masking the spike noise. As a result, it
prevents the sense of current from malfunctioning (See the figure below.).
Peak Current Control with CL pin
DRN
6
IDRN
From
High-Voltage
MOSFET Source
Driver
V GATE
t BLANKCL
Current
Sense
GND
7
I CL
3V
CL
3
RCL
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DS405-00010-1v0-E
MB39C602
(8) FC Part
The switching frequency is controlled by setting the current of the FC pin. In on-time control, the switching
frequency is set by pulling up the FC pin to VDD.
Switching frequency range is from 30kHz to 120kHz.
tSW (max) - Max Switching
Frequency [kHz]
Switching Frequency Range
120
30
5
50
100
150165 200
IFC-fSW Control Current [μA]
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13
MB39C602
(9) ZCD Part
MB39C602 requires the following two conditions in order to start the next switching cycle.
1.
2.
The time since the last turn-on edge must be equal to or longer than the switching time set by IFC.
Immediately after zero current detection at ZCD pin. Or, the time since the last zero current detection
must be longer than tWAIT (ZCD) (2.4μs or less).
The ZCD pin is connected with Auxiliary Winding of the transformer through the resistance division, and
detects zero current as shown below.
A delay, 50ns to 200ns, can be added with CZCD to adjust the turn-on of the primary switch with the resonant
bottom of Primarty Winding waveform.
Switching Waveform at detecting zero current
High Voltage
MOSFET Drain
CZCD - Based
Delay
ZCD Inpu t
Switching Time
Switching Time (tSW)
by IFC
IDRN
ZCD pin Connection
NP
NS
NB
1
RZCD1
Zero Current
Detect
ZCD
2
RZCD2
CZCD
20mV
OV
Fault
Fault Timing
and Control
5V
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DS405-00010-1v0-E
MB39C602
VARIOUS PROTECTION CIRCUITS
Under voltage lockout protection (UVLO)
The under voltage lockout protection (UVLO) protects IC from malfunction and protects the system from
destruction/deterioration during the transient state and momentary drop due to start up for the power supply
pin voltage (VDD). The voltage decrease of the VDD pin is detected with comparator, and output HS
DRIVER is turned off and output DRIVER is turned off, and the switching is stopped. The system returns if
the VDD pin becomes more than the threshold voltage of the UVLO circuit.
Output over voltage Proteciton (OVP)
When LED is in the state of open and the output voltage rises too much, the voltage of Auxiliary Winding
and the voltage of the ZCD pin rise. The over voltage is detected by sampling this voltage of the ZCD pin.
When ZCD pin voltage rises more than the threshold voltage of OVP, the over voltage is detected. Output
HS DRIVER is turned off, and output DRIVER is turned off, and the switching is stopped. (latch-off)
If the VDD pin becomes below the voltage of Fault Latch Reset, OVP is released.
Over temperature protection (OTP)
The over temperature protection (OTP) is a function to protect IC from the thermal destruction. When the
junction temperature reaches +150°C, output HS DRIVER is turn off, and output DRIVER is turned off,
and the switching is stopped. It returns again when the junction temperature falls to +125°C (automatic
recovery).
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15
MB39C602
VARIOUS FUNCTION TABLES
DRN
Function
Detection
Condition at
Discharge
LS_DRV HS_DRV VDD SW
Protected
SW
Operation
Normal Operation
Under Voltage Lockout
Protection (UVLO)
OTC
Shutdown
Return
Remarks
Condition
OFF
OFF
-
-
-
OFF
OFF
ON
OFF
VDD < 8.0V
VDD > 10.2V
Standby
OFF
OFF
ON
OFF
OTC = GND
OTC > 1V
Standby
Output Over Voltage
Protection (OVP)
OFF
OFF
ON
ON
ZCD > 5V
VDD < 6V
→
VDD > 10.2V
Latch-off
Over Temperature
Protection (OTP)
OFF
OFF
ON
OFF
Tj > +150°C
Tj < +125°C
-
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DS405-00010-1v0-E
MB39C602
I/O PIN EQUIVALENT CIRCUIT SCHEMATIC
Pin
No.
Pin
Name
1
FC
Equivalent Circuit Schematic
Vref 5V
2
FC
1
GND
7
ZCD
Vref 5V
3
ZCD
2
GND
7
CL
Vref 5V
4
CL
3
GND
7
OTC
Vref 5V
OTC
4
GND
7
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17
MB39C602
Pin
No.
Pin
Name
5
VCG
Equivalent Circuit Schematic
VDD 8
Vref 5V
5 VCG
6
DRN
6 DRN
GND 7
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DS405-00010-1v0-E
MB39C602
USAGE PRECAUTION
1. Do not configure the IC over the maximum ratings.
If the IC is used over the maximum ratings, the LSI may be permanently damaged.
It is preferable for the device to normally operate within the recommended usage conditions. Usage outside
of these conditions can have an adverse effect on the reliability of the LSI.
2. Use the device within the recommended operating conditions.
The recommended values guarantee the normal LSI operation under the recommended operating conditions.
The electrical ratings are guaranteed when the device is used within the recommended operating conditions
and under the conditions stated for each item.
3. Printed circuit board ground lines should be set up with consideration for common
impedance.
4. Take appropriate measures against static electricity.
Containers for semiconductor materials should have anti-static protection or be made of conductive
material.
After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
Work platforms, tools, and instruments should be properly grounded.
Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ in serial between body and
ground.
5. Do not apply negative voltages.
The use of negative voltages below - 0.3 V may make the parasitic transistor activated to the LSI, and can
cause malfunctions.
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19
MB39C602
ORDERING INFORMATION
Part number
Package
MB39C602PNF
8-pin plastic SOP
(FPT-8P-M02)
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Remarks
DS405-00010-1v0-E
MB39C602
RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION
The LSI products of FUJITSU SEMICONDUCTOR with “E1” are compliant with RoHS Directive, and has
observed the standard of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB),
and polybrominated diphenyl ethers (PBDE). A product whose part number has trailing characters “E1” is
RoHS compliant.
MARKING FORMAT (Lead Free version)
XXXX
XXX
INDEX
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Lead-free version
21
MB39C602
LABELING SAMPLE (Lead free version)
Lead-free mark
JEITA logo
JEDEC logo
MB123456P - 789 - GE1
(3N) 1MB123456P-789-GE1
1000
(3N)2 1561190005 107210
G
Pb
QC PASS
PCS
1,000
MB123456P - 789 - GE1
2006/03/01
ASSEMBLED IN JAPAN
MB123456P - 789 - GE1
1/1
0605 - Z01A
1000
1561190005
The part number of a lead-free product has
the trailing characters "E1".
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"ASSEMBLED IN CHINA" is printed on the label
of a product assembled in China.
DS405-00010-1v0-E
MB39C602
MB39C602PNF RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY
LEVEL
[FUJITSU SEMICONDUCTOR Recommended Mounting Conditions]
Recommended Reflow Condition
Item
Condition
Mounting Method
IR (infrared reflow), warm air reflow
Mounting times
2 times
Storage period
Storage conditions
Before opening
Please use it within two years after
manufacture.
From opening to the 2nd reflow
Less than 8 days
When the storage period after
opening was exceeded
Please process within 8 days
after baking (125°C ±3°C, 24H+ 2H/─0H) .
Baking can be performed up to two times.
5°C to 30°C, 70% RH or less (the lowest possible humidity)
[Mounting Conditions]
(1) Reflow Profile
260°C
255°C
Main heating
170 °C
to
190 °C
(b)
RT
(e) Cooling
(d)
(e)
(d')
(a)
"H" rank : 260°C Max
(a) Temperature Increase gradient
(b) Preliminary heating
(c) Temperature Increase gradient
(d) Peak temperature
(d') Main Heating
(c)
: Average 1°C/s to 4°C /s
: Temperature 170°C to 190°C, 60 s to 180 s
: Average 1°C /s to 4°C /s
: Temperature 260°C Max; 255°C or more, 10 s or less
: Temperature 230°C or more, 40 s or less
or
Temperature 225°C or more, 60 s or less
or
Temperature 220°C or more, 80 s or less
: Natural cooling or forced cooling
Note: Temperature : the top of the package bod
(2) JEDEC Condition: Moisture Sensitivity Level 3 (IPC/JEDEC J-STD-020D)
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23
MB39C602
(3) Recommended manual soldering (partial heating method)
Item
Condition
Before opening
Within two years after manufacture
Between opening and mounting
Within two years after manufacture
(No need to control moisture during the storage
period because of the partial heating method.)
Storage period
Storage conditions
5°C to 30°C, 70% RH or less (the lowest possible humidity)
Mounting conditions
Temperature at the tip of a soldering iron: 400°C Max
Time: Five seconds or below per pin*
*: Make sure that the tip of a soldering iron does not come in contact with the package body.
(4) Recommended dip soldering
Item
Condition
Mounting times
1 time
Storage period
Before opening
Please use it within two years after
manufacture.
From opening and mounting
Less than 14 days
When the storage period after
opening was exceeded
Please process within 14 days
after baking (125°C ±3°C, 24H+ 2H/─0H) .
Baking can be performed up to two times.
Storage conditions
5°C to 30°C, 70% RH or less (the lowest possible humidity)
Mounting condition
Temperature at soldering tub: 260°C Max
Time: Five seconds or below
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DS405-00010-1v0-E
MB39C602
PACKAGE DIMENSIONS
8-pin plastic SOP
Lead pitch
1.27 mm
Package width×
package length
3.9 mm × 5.05 mm
Lead shape
Gullwing
Sealing method
Plastic mold
Mounting height
1.75 mm MAX
Weight
0.06 g
(FPT-8P-M02)
8-pin plastic SOP
(FPT-8P-M02)
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
+0.25
+.010
*1 5.05 –0.20 .199 –.008
8
+0.03
0.22 –0.07
+.001
.009 –.003
5
*23.90±0.30 6.00±0.20
(.154±.012) (.236±.008)
Details of "A" part
45°
1.55±0.20
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
1
"A"
4
1.27(.050)
0.44±0.08
(.017±.003)
0.13(.005) M
0~8°
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
C
2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/
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25
MB39C602
MEMO
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DS405-00010-1v0-E
MB39C602
MEMO
DS405-00010-1v0-E
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FUJITSU SEMICONDUCTOR CONFIDENTIAL
27
MB39C602
FUJITSU SEMICONDUCTOR LIMITED
Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,
Kohoku-ku Yokohama Kanagawa 222-0033, Japan
Tel: +81-45-415-5858
http://jp.fujitsu.com/fsl/en/
For further information please contact:
North and South America
FUJITSU SEMICONDUCTOR AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600
Fax: +1-408-737-5999
http://us.fujitsu.com/micro/
Asia Pacific
FUJITSU SEMICONDUCTOR ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://sg.fujitsu.com/semiconductor/
Europe
FUJITSU SEMICONDUCTOR EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/semiconductor/
FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.
30F, Kerry Parkside, 1155 Fang Dian Road,
Pudong District, Shanghai 201204, China
Tel : +86-21-6146-3688 Fax : +86-21-6146-3660
http://cn.fujitsu.com/fss/
Korea
FUJITSU SEMICONDUCTOR KOREA LTD.
902 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fsk/
FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.
2/F, Green 18 Building, Hong Kong Science Park,
Shatin, N.T., Hong Kong
Tel : +852-2736-3232 Fax : +852-2314-4207
http://cn.fujitsu.com/fsp/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely
for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU
SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When
you develop equipment incorporating the device based on such information, you must assume any responsibility arising
out of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as
license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of
FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of
any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR
assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would
result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or
damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the
regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department
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DS405-00010-1v0-E
Evaluation board Manual
19W Tube T8 AC85-265V
MB39C602-EVB-CN01
Rev 1.0
Feb. 2013
1. Summarize
The drive capability MB39C602-EVB-CN01 reach 19w.It can be placed inT5, T8,
T10, T12 lamp used to replace existing fluorescent lamps.
2. EVB Electrical Performance Specifications
Ta = +25°C , fac=50Hz
TEST
CONDITIONS
PARAMETER
MIN
TYP
MAX
UNITS
265
VAC
Input Characteristics
Input Voltage Range
85
Maximum Input current
85VAC /50Hz
280
mA
Output Characteristics
Output Voltage
30
ILED
Output Current
Ripple
40
42
V
485
mA
144
mAPP
100
KHz
87
%
Systems Characteristics
Switching Frequency
Peak Efficiency
ILED=485mA
Power Factor
0.99
ITHD
8.6
%
295*18*9
mm
PCB Size
L*W*H
Dimming Mode
-
Protection Function
UVLO,OTP, OVP, SCP
3.Terminal Description
Pin Name
Description
L
AC line input
N
AC line input
LED+
LED output (+)
LED-
LED return point (-)
1
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
4. Test Setup
(Note)
This evaluation board is a high voltage. Should be handled carefully.
During operation, do not touch the evaluation board.
(1) Recommended Test Setup
・Connect L and N to AC power.
・Please connect the measuring instrument and LED.
(LED: 12 series connected, VF = 3.3V, IF = 485mA)
AC Power Supply
VAC:220Vrms
DMM
IOUT
+
DMM
VOUT
+
(2) How to check
• Make sure that the terminals are connected correctly, and then turn on the AC POWER.
• LED light ,and the same time VOUT = 40V, IOUT = 485mA .The EVB working properly.
2
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. EVM Assembly Drawing and PCB layout
MB39C602-EVB-CN01
Top Layer (top view)
Bottom Copper (bottom view)
Top Layer Assembly Drawing (top view)
Bottom Assembly Drawing (bottom view)
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
3
6. Schematic
4
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
7. BOM List
COUNT
REFDES
DESCRIPTION
PART NUMBER
MFR
1
U1
LED driver IC, SOP-8
MB39C602
FUJITSU
1
U2
Optical coupling
PS2581AL2
NEC
1
U3
Rail-to-rail op amp，SOT-235
SGM321
SGMICRO
1
F1
Two-pin DIP package glass fuse,1A/250V
T1A-250V
STD
1
BR1
4-pin SMD rectifier bridge,1000V/1A,SO-8
DB107S
MIC
1
RZ1
2-pin DIP package varistor，Diameter:7mm
7D471
SPSEMI
2
CX1 CX2
2-pin DIP package safety capacitor，
275VAC/0.1uF，X2
STD
STD
1
CY1
2-pin DIP package safety
capacitor,2.2nF,Y2
DE1E3KX222M4B
L01
Murata
1
C1
2-pin DIP package CBB
capacitor,22nF/630V
STD
STD
1
C15
2-pin DIP package capacitorelectrolytic，
100uF/25V/105°C,Size:6mm*8mm
STD
STD
2
C4 C5
2-pin DIP package capacitorelectrolytic，
470uF/50V/105°C,Size:10mm*20mm
STD
STD
3
L2 L3 L4
2-pin DIP package differential mode
inductance，
2mH/10%/DR8mm*10mm/0.21mm(wire
diameter)
DR8x10-2mH
BZD
1
L1
4-pin DIP package common mode
inductance， 30mH/10%/EE12/0.21mm(wire
diameter)
EE12-30mH
BZD
1
L5
5-pin DIP package common mode
inductance, 700uH,Size:9mm*5mm*3mm
T9x5x3
BZD
1
T1
Transformer，EDR2809/PC95,PIN5+2
EDR2809/PC95
BZD
1
Q1
N-MOSFET,650 V, 7.3 A, 0.6 W, TO-220
SPA07N60C3
Infineon
1
D1
2-pin SMD fast recovery
rectifier,1000V/1A,SMA
STTH108A
ST
1
D2
2-pin DIP super fast recovery rectifier，
300V/3A,DO-27
HER304
MIC
1
D4
Super fast recovery rectifier，
175V/200mA,SOT-23
MMBD1404
Fairchild
1
D3
5.1V Zener diode,1206
1N5231B
DIODES
1
D5
16V Zener diode,1206
1N5246B
DIODES
1
D6
General purpose diode,DO-41,In parallel
with R13
IN4007
MIC
5
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
COUNT
REFDES
DESCRIPTION
PART NUMBER
MFR
2
R1 R2
NC/1M/5%/1206
RC1206JR-101ML
YAGEO
3
R3 R4 R8
1M/5%/1206
RC1206JR-101ML
YAGEO
3
R5 R6 R7
4K3/5%/0805
RC0805JR-104K3L
YAGEO
1
R9
560K/5%/1206
RC1206JR-10560KL
YAGEO
2
R10 R11
150K/5%/1206
RC1206JR-10150KL
YAGEO
1
R12
10Ω/5%/1206
RC1206JR-1010RL
YAGEO
1
R13
0.5R/1%/1206
RC1206FR-10R5L
YAGEO
1
R14
51K/5%/1206
RC1206JR-1051KL
YAGEO
1
R15
4.99Ω/5%/0805
RC0805JR-104R99L
YAGEO
1
R16
10Ω/5%/0805
RC0805JR-1010RL
YAGEO
1
R17
15K/5%/0805
RC0805JR-1015KL
YAGEO
1
R18
150K/1%/0805
RC0805FR-10150KL
YAGEO
1
R19
47K/1%/0603
RC0603FR-0747KL
YAGEO
1
R20
33K/1%/0603
RC0603FR-0733KL
YAGEO
1
R21
100K/1%/0603
RC0603FR-07100KL
YAGEO
1
R22
10K/1%/0603
RC0603FR-0710KL
YAGEO
1
R23
360K/1%/0603
RC0603FR-07360KL
YAGEO
2
R24 R25
3K/5%/0603
RC0603JR-073KL
YAGEO
1
R26
20K/5%/0603
RC0603JR-0720KL
YAGEO
1
R27
560K/1%/0603
RC0603FR-07560KL
YAGEO
1
R28
27K/1%/0603
RC0603FR-0727KL
YAGEO
1
R30
100Ω/5%/1206
RC1206JR-10100RKL
YAGEO
1
C2
15nF/200V/1206
MC1206B153K201CT
MULTICOMP
1
C3
330pF/1000V/1206
MC1206N331J201CT
MULTICOMP
3
C6 C8 C14
0.1uF/50V/0603
CC0603KRX7R8BB104
YAGEO
5
C7 C10 C11
C12 C13
10nF/50V/0603
CC0603KRX7R9BB103
YAGEO
1
C9
330nF/50V/0603
CC0603KRX5R8BB334
YAGEO
1
C15
39pF/50V/0603, In
parallel with R19
CC0603JRNPO9BN390
YAGEO
6
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9. Property data
9-1 Efficiency
VIN:85VAC ~265VAC/50Hz, IOUT=485mA，TA=25℃
100%
90%
Efficiency （%）
80%
70%
60%
50%
40%
30%
20%
265
260
250
240
230
220
210
200
190
180
170
160
150
140
130
120
110
100
90
0%
85
10%
VIN(VRMS)
9-2 Power Factor
VIN:85VAC ~265VAC/50Hz, IOUT=485mA，TA=25℃
1
0.98
PF
0.96
0.94
265
260
250
240
230
220
210
200
190
180
170
160
150
140
130
120
110
100
90
0.9
85
0.92
VIN(VRMS)
7
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9-3 ITHD
VIN:85VAC ~265VAC/50Hz, IOUT=485mA，TA=25℃
16.0%
14.0%
12.0%
ITHD
10.0%
8.0%
6.0%
4.0%
2.0%
0.0%
85 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 265
VIN(VRMS)
9-4 Line regulation
VIN:85VAC ~265VAC/50Hz, TA=25℃
500
495
490
Iled(mA)
485
480
475
470
465
460
455
450
85 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 265
VIN (VRMS)
8
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
VAC=220VRMS, 50Hz, LED ; 12 pcs in series
9-6 Switching Waveform
9-5 Output Ripple
VBULK
VSW(Q1 drain)
Iac
VOUT
IOUT
IOUT
9-8 Turn-Off Waveform
9-7 Turn-On Waveform
VBULK
VBULK
VDD
VDD
VOUT
VOUT
IOUT
IOUT
9-9 LED Open Waveform
9-10 LED Short Waveform
VSW(Q1 drain)
VSW(Q1 drain)
VOUT
VOUT
IOUT
IOUT
9
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9-11 EMI Conduction Test
EN55015-N
10
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
EN55015-L
11
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9-12 EVB Temperature
VAC=220VRMS 50Hz LED ; 12 pcs in series, Iled=485mA
Top Side
Name
Center
Hot
Cold
Top Side
Temperature
13.5°C
40.4°C
9.6°C
Emissivity
0.95
0.95
0.95
Bottom Side
Name
Center
Hot
Cold
Background
20.0°C
20.0°C
20.0°C
Bottom Side
Temperature
18.6°C
34.8°C
9.7°C
Emissivity
0.95
0.95
0.95
12
Background
20.0°C
20.0°C
20.0°C
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
10. Evaluation board picture
295mm
18mm
Top View
Bottom View
13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
11. Revision History
Name
Version
MB39C602-EVB-CN01
Rev 1.0
Remark
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for
the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU
SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When
you develop equipment incorporating the device based on such information, you must assume any responsibility arising out
of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as
license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of
FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any
third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no
liability for any infringement of the intellectual property rights or other rights of third parties which would result from the
use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or
damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the
regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
14
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Evaluation board Manual
7W no-Isolation Blub AC220V
MB39C602-EVB-CN02
Rev 1.0
Mar. 2013
1. Summarize
The driver MB39C602-EVB-CN02 has the driving capability of 7 watts . It can be
placed in some LED bulb, Down lamp and etc.
2. EVB Electrical Performance Specifications
Ta = +25℃ , fac = 50Hz
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
198
220
242
VAC
Input Characteristics
Input Voltage Range
Maximum Input
Current
VIN=220Vac，50Hz,POUT=7W
20
mA
23
V
POUT=7W
300
mA
ILED=300mA, Co=330uF
20
mAPP
40
KHz
VIN=220Vac，50H
87
%
VIN=220Vac
0.52
L*W*H
60*20*17
Output Characteristics load:7s1p
Output Voltage
Output Current=307mA
Output Current
Output Current Ripple
Systems Characteristics
Switching frequency
Efficiency
Power Factor
PCB Size
Dimming Mode
-
Protection function
No
mm
-
OTP, OCP,
3.Terminal Description
Pin Name
Description
L
AC line input
N
AC line input
LED+
LED output (+)
LED-
LED output (-)
1
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
4. Test Setup
(Note)
This evaluation board is a high voltage. Should be handled carefully.
During operation, do not touch the evaluation board.
(1) Recommended Test Setup
・Connect L and N to AC power.
・Please connect the measuring instrument and LED.
(LED: 7LED series connected, VF = 3.3V, IF = 300mA)
AC Power Supply
VAC:220Vrms
DMM
VOUT
+
DMM
IOUT
+
(2) How to check
• Make sure that the terminals are connected correctly, and then turn on the AC POWER.
• LED light ,and the same time VOUT = 23V, IOUT = 300mA .The EVB working properly.
2
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. PCB layout
MB39C602-EVB-CN02
Top view(top side)
Top view (bottom side)
Board Layout (top side)
Board Layout (bottom side)
3
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
6. Schematic
4
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
7. BOM List
No
1
2
3
COMPON
ENT
U1
RZD
D1
4
5
6
7
8
D3
D2
BR1
Q1
F1
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
DESCRIPTION
LED driver ic, SOP-8
MOV
Ultra fast 600V 2A,SMB
Zener diode Glass 500mW, 18V, LL34
Diode Ultra fast 200mA 200V,SOT-23
Bridge rectifier,0.5A,600V,SO-4
N-mosfet,800V,3.8ohm,2.5A,IPAK
Fuse ,axial glass Fast acting,250V 1A,
2-pin DIP safety capacitor, 275VAC/0.1uF，
CX1,CX2 X2
Aluminum electrolytic capacitor, 63v 330uF,
C1
105°, 10*18
Aluminum electrolytic capacitor,400v 4.7uF
C7
105°, 7*13
Aluminum electrolytic capacitor,25V 100uF
C2
105° 6*8
C5
Ceramic capacitor 50v 10pF, X7R, 0603
C3,C8,C9 Ceramic capacitor 50v 10nF, X7R, 0603
C4
Ceramic capacitor 50v 4.7uF, X7R, 1206
Coupling inductor,800uH, 0.5A
T1
NA:NS=100T:72T
L3,L4 Inductor,1mH, 50mA
R1,R4,R5 Resistor, chip, 1MΩ, ±1%,1/8W, 0805
R7
Resistor, chip, 3Ω, ±1%,1/8W, 0805
R8,R2 Resistor, chip, 4.3KΩ, ±1%,1/10W, 0603
R6
Resistor, chip, 5.1Ω, ±5%,1/10W, 0603
R11
Resistor, chip, 33KΩ, ±1%,1/10W, 0603
R13
Resistor, chip, 56Ω, ±1%,1/10W, 0603
R9
Resistor, chip, 100KΩ, ±5%,1/4W, 1206
R3
Resistor, chip, 91KΩ, ±1%,1/10W, 0603
R12
Resistor, chip, 169KΩ, ±1%,1/10W, 0603
5
PART No.
MB39C602
7D471
STTH2R06
MFR
Fujitsu
STD
MMBD1404
MB6S
D3NK8
STD
STD
Fairchild
Fairchild
ST
STD
STD
STD
STD
Chong
STD
Chong
STD
GRM1885C1H100JA01D
GRM188R71H103KA01D
GRM31CF51H475ZA01L
LSHK
MuRata
MuRata
MuRata
STD
STD
RC0805JR-071ML
RC0805JR-073RL
RC0603FR-074K3L
RC0603JR-075R1L
RC0603FR-0733KL
RC0603FR-0756RL
RC1206JR-07100KL
RC0603FR-0791KL
RC0603FR-07178KL
BZD
BZD
YAGEO
YAGEO
YAGEO
YAGEO
YAGEO
YAGEO
YAGEO
YAGEO
YAGEO
ST
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
8. Property data
8-2 Power Factor
8-1 Efficiency
0.8
1
η
0.7
0.6
Power Factor PF
Conversion efficiency
0.9
0.8
0.7
0.5
0.4
0.3
0.2
0.1
0.6
0
180 190 200 210 220 230 240 250
Input Voltage 50Hz Vac [Vrms]
Input Voltage 50Hz Vac [Vrms]
Load：7LEDs in series
Load：7LEDs in series
8-3 Load regulation
8-4 Line regulation
400
330
380
320
Output Current lLED [mA]
Output Current ILED [mA]
360
340
320
300
280
260
240
310
300
290
280
270
260
220
200
180 190 200 210 220 230 240 250
250
10
15
20
25
30
180 190 200 210 220 230 240 250
Input Voltage 50Hz Vac [Vrms]
Output Voltage VLED [V]
Load：4 — 9LEDs in series
Load：7LEDs in series
6
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
VAC=220V, 50Hz. LED =7 pcs in series
8-6 Switching Waveform
8-5 Output Ripple
IOUT
IOUT
VIN
VSW(Q1 drain)
8-8 Turn-Off Waveform
8-7 Turn-On Waveform
VBULK
VBULK
VDD
VDD
IOUT
IOUT
VOUT
VOUT
8-10 LED Short Waveform
8-9 LED Open Waveform
VSW(Q1 drain)
IOUT
VSW(Q1 drain)
VDD
VDD
IOUT
VOUT
VOUT
Do not Open too long
Do not short too long
7
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
8-11 EMI Conduction Test
EN55015-L
EN55015-N
8
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9. Evaluation board picture
Top View
Bottom View
9
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
10. Revision History
Name
Version
MB39C602-EVB-CN02
Rev 1.0
Remark
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for
the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU
SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When
you develop equipment incorporating the device based on such information, you must assume any responsibility arising out
of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as
license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of
FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any
third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no
liability for any infringement of the intellectual property rights or other rights of third parties which would result from the
use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or
damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the
regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
10
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Evaluation board Manual
9W LED PWM Dimming Lighting
AC 220V
MB39C602-EVB-CN04
Rev 0.1
Mar. 2013
1. Summarize
The drive capability MB39C602-EVB-CN04 reach 9w(9 LED in series) .The dimming
function supports DC(0V-5V) input and PWM(0V-5V) input. Dimming range is 10%
to 100%. The EVB just supports 220VAC input.
2. EVB Electrical Performance Specifications
Ta = +25°C , fac=50Hz
PARAMETER
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Input Characteristics
Input Voltage Range
Maximum Input current
220VAC /50Hz
220
VAC
52
mA
Output Characteristics
Output Voltage
24
30
V
ILED
28
304
mA
Systems Characteristics
Switching Frequency
Efficiency
ILED=216mA
Power Factor
50
KHz
83
%
0.99
PCB Size
L*W*H
Dimming Mode
70*20*20
mm
(0V-5V)PWM or (0V-5V)DC
Protection Function
UVLO,OTP, OVP, SCP
3.Terminal Description
Pin Name
Description
L
AC line input
N
AC line input
LED+
LED output (+)
LED-
LED return point (-)
PWM
0V-5V PWM or DC signal input
GND
Signal GND
1
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
4. Test Setup
(Note)
This evaluation board is a high voltage. Should be handled carefully.
During operation, do not touch the evaluation board.
(1) Recommended Test Setup
・Connect L and N to AC power.
・Please connect the measuring instrument and LED.
(LED: 9 series connected)
AC Power Supply
VAC:220Vrms
Power
Meter
+
Signal
generator
+
-
DMM
IOUT
+
DMM
VOUT
+
(2) How to check
• Make sure that the terminals are connected correctly, and then turn on the AC POWER.
• LED light , the EVB working properly.
2
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. EVM Assembly Drawing and PCB layout
MB39C602-EVB-CN04
Top Layer Assembly Drawing (top view)
Bottom Assembly Drawing (bottom view)
3
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. EVM Assembly Drawing and PCB layout
MB39C602-EVB-CN04
Top Copper (top view)
Bottom Copper (bottom view)
4
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
6. Schematic
TP1
L
TP2
N
R10
110K/0805/1%
1
2
AC
+
-
BR1
MB6S
AC
R12
39K/0603/1%
4
3
R13
100K/0603/1%
CL
ZCD
FC
VCG
DRN
GND
VDD
R1
560K/0805/5%
R2
560K/0805/5%
R3
560K/0805/5%
8
7
6
5
R4
R5
C2
15nF/250V/1206
D1
STTH108A/SMA
Q1
SPA07N60C3
1
2
1
18V
C12
100uF/25V
D3
MMBD1404
R7
4.99/0603//5%
C10
100nF/0603
3
10 0K/12 06 /5 %
OTC
U1
MB39C602
R15
240K/0603/1%
C1
22nF/630VDC/CBB
C5
10nF/0603
1
2
3
4
R14
10K/0603/1%
C6
10nF/0603
1
3
4
5
T1
T
10
8
1
D2
HER206
TP5
TP6
GND
5V
C4
0.1uF/0805
5V
C13
1uF/0603
U3
SGM321
4
OUT
C11
100nF/0603
R16
10K/0603/5%
R9
12K/0805/5%
D4
5V/D1206
R17
3K/0603/5%
PWMor DC Input(0V-5V)
U2
PS2581AL2
R8
3.01/0805/5%
D6
18V/D1206
4
2
+
C14
330nF/0603
1
3
R19
R20
1M/0603/1%/NC
20K/0603/1%
C8
10nF/0603
R23
2K/0603/1%
D5
IN4007
R6
0.33/1206/1%
C9
10nF/0603
C3
470uF/50V/105C
R21
560K/0603/1%
R22
12K/0603/1%
LED-
LED+
TP4
LED-
TP3
LED+
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5
10 0K/12 06 /5 %
R11
33K/0603/1%
C7
10nF/0603
3
R18
3K/0603/5%
5
2
2
3
7. BOM
COUNT
REFDES
DESCRIPTION
PART NUMBER
MFR
MB39C602
PS2581AL2
FUJITSU
NEC
SGM321
SGMICRO
MB6S
MIC
1
1
U1
U2
LED driver IC, SOP-8
Optical coupling
1
U3
Rail-to-rail op amp，SOT-235
1
BR1
4-pin SMD rectifier bridge,1000V/1A,SO-8
1
C1
2-pin DIP package CBB capacitor,22nF/630V
STD
STD
1
C2
15nF/200V/1206
STD
STD
1
C3
2-pin DIP package capacitorelectrolytic，
470uF/50V/105°C,Size:10mm*20mm
STD
STD
1
5
2
STD
STD
STD
STD
STD
STD
STD
STD
1
1
3
2
1
1
1
1
1
1
1
1
1
1
1
2
1
1
1
1
1
C4
0.1uF/50V/0805
C5,C6,C7,C8,C9 10nF/50V/0603
C10,C11
100nF/50V/0603
2-pin DIP package capacitorelectrolytic，
C12
100uF/25V/105°C,Size:6mm*8mm
C13
1uF/50V/0603
C14
330nF/50V/0603
R1,R2,R3
560K/5%/0805
R4,R5
100K/5%/1206
R6
0.33Ω/1%/1206
R7
4.99Ω/5%/0603
R8
3Ω/5%/0805
R9
12K/5%/0805
R10
110K/1%/0805
R11
33K/1%/0603
R12
39K/1%/0603
R13
100K/1%/0603
R14
10K/1%/0603
R15
240K/1%/0603
R16
10K/5%/0603
R17,R18
3K/5%/0603
R19
20K/1%/0603
R20
1M/1%/0603/NC
R21
560K/1%/0603
R22
12K/1%/0603
R23
2K/1%/0603
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
1
D1
2-pin SMD fast recovery rectifier,1000V/1A,SMA
STTH108A
ST
1
D2
2-pin SMD fast recovery rectifier,1000V/2A,DO-15
HER208
MIC
1
D3
Super fast recovery rectifier，175V/200mA,SOT-23
MMBD1404
Fairchild
1
1
1
1
D4
D5
D6
Q1
5.1V Zener diode,1206
1000V/1A,DO-41
18V Zener diode,1206
N-MOSFET,650 V, 7.3 A, 0.6 W, TO-220
1N5231B
IN4007
1N5246B
SPA07N60C3
DIODES
MIC
DIODES
Infineon
1
T1
Transformer，EF20/PC44,PIN5+5
EF20/PC44
BZD
1
6
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
8. Transformer Specification
Transformer (220vac) Description
The core specifications: EF20/PC44 ; Operating frequency: 50KHz ;
Bobin size see below (horizontal 5 +5 Pin) .
1.Description ：(Cut 2,6,7,9 Pin)
The primary winding (w1, w2, w3) using a sandwich winding, the
reference winding see below. W1, W3, W4 winding plus retaining wall.
Core reference gap 0.4mm (air gap opening in the column), to ensure
1pin to 3pin inductance measured at 50KHz conditions 2500uH error of
± 10%.Bonded core, curing, dipping, drying, retest inductance value.
2. Electrical block diagram
7
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9. Property data
9-2 Dimming Range VS Po
9-1 Dimming Range VS ILED
VIN:220VAC/50Hz, Ta=25℃, 9 LED in series
VIN:220VAC/50Hz, Ta=25℃, 9 LED in series
0.35
Output Power(W)
0.3
ILED(A)
0.25
0.2
0.15
0.1
0.05
0
10
9
8
7
6
5
4
3
2
1
0
PWM Duty Cycle
PWM Duty Cycle
9-3 Line Regulation
9-4 Line Regulation
VIN:220VAC/50Hz, Ta=25℃, 9 LED in series
0.35
0.04
0.3
0.035
0.03
0.2
ILED(A)
ILED(A)
0.25
0.15
0.1
0.025
0.02
0.015
0.01
0.05
0
VIN:220VAC/50Hz, Ta=25℃, 9 LED in series
0.005
190
200 210 220 230 240
PWM Duty Cycle=100%
250
8
0
190
200
210 220 230 240
PWM Duty Cycle=0%
250
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
VAC=220VRMS, 50Hz, Ta = +25°C, LED : 9 pcs in series
9-6 Turn-Off Waveform
9-5 Turn-On Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
PWM Duty Cycle: 0%
PWM Duty Cycle: 0%
ILED
9-8 Turn-Off Waveform
9-7 Turn-On Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
ILED
PWM Duty Cycle: 50%
PWM Duty Cycle: 50%
9-9 Turn-On Waveform
9-10 Turn-Off Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
ILED
PWM Duty Cycle: 100%
PWM Duty Cycle: 100%
9
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
VAC=220VRMS, 50Hz, Ta = +25°C, LED : 9 pcs in series
9-11 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 0%
9-12 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 50%
9-13 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 100%
10
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
10. Evaluation board picture
Top View
Bottom View
11
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
12. Revision History
Name
Version
MB39C602-EVB-CN04
Rev 1.0
Remark
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for
the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU
SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When
you develop equipment incorporating the device based on such information, you must assume any responsibility arising out
of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as
license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of
FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any
third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no
liability for any infringement of the intellectual property rights or other rights of third parties which would result from the
use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or
damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the
regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Evaluation board Manual
9W LED PWM Dimming Lighting
AC 110V
MB39C602-EVB-CN05
Rev 0.1
Mar. 2013
1. Summarize
The drive capability MB39C602-EVB-CN05 reach 9w(9 LED in series) .The dimming
function supports DC(0V-5V) input and PWM(0V-5V) input. Dimming range is 10%
to 100%. The EVB just supports 110VAC input.
2. EVB Electrical Performance Specifications
Ta = +25°C , fac=60Hz
PARAMETER
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Input Characteristics
Input Voltage Range
Maximum Input current
110VAC /60Hz
110
VAC
109
mA
Output Characteristics
Output Voltage
24
30
V
ILED
17
304
mA
Systems Characteristics
Switching Frequency
Efficiency
ILED=186mA
Power Factor
50
KHz
80
%
0.99
PCB Size
L*W*H
Dimming Mode
70*20*20
mm
(0V-5V)PWM or (0V-5V)DC
Protection Function
UVLO,OTP, OVP, SCP
3.Terminal Description
Pin Name
Description
L
AC line input
N
AC line input
LED+
LED output (+)
LED-
LED return point (-)
PWM
0V-5V PWM or DC signal input
GND
Signal GND
1
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
4. Test Setup
(Note)
This evaluation board is a high voltage. Should be handled carefully.
During operation, do not touch the evaluation board.
(1) Recommended Test Setup
・Connect L and N to AC power.
・Please connect the measuring instrument and LED.
(LED: 9 series connected)
AC Power Supply
VAC:220Vrms
Power
Meter
+
Signal
generator
+
-
DMM
IOUT
+
DMM
VOUT
+
(2) How to check
• Make sure that the terminals are connected correctly, and then turn on the AC POWER.
• LED light , the EVB working properly.
2
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. EVM Assembly Drawing and PCB layout
MB39C602-EVB-CN05
Top Layer Assembly Drawing (top view)
Bottom Assembly Drawing (bottom view)
3
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. EVM Assembly Drawing and PCB layout
MB39C602-EVB-CN05
Top Copper (top view)
Bottom Copper (bottom view)
4
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
6. Schematic
TP1
L
TP2
N
R10
110K/0805/1%
1
2
AC
+
-
BR1
MB6S
AC
R12
39K/0603/1%
4
3
R13
100K/0603/1%
CL
ZCD
FC
VCG
DRN
GND
VDD
R1
560K/0805/5%
R2
560K/0805/5%
R3
560K/0805/5%
8
7
6
5
R4
R5
C2
15nF/250V/1206
D1
STTH108A/SMA
Q1
SPA07N60C3
1
2
1
18V
C12
100uF/25V
D3
MMBD1404
R7
4.99/0603//5%
C10
100nF/0603
3
10 0K/12 06 /5 %
OTC
U1
MB39C602
R15
240K/0603/1%
C1
22nF/630VDC/CBB
C5
10nF/0603
1
2
3
4
R14
10K/0603/1%
C6
10nF/0603
1
3
4
5
T1
T
10
8
1
D2
HER206
TP5
TP6
GND
5V
C4
0.1uF/0805
5V
C13
1uF/0603
U3
SGM321
4
OUT
C11
100nF/0603
R16
10K/0603/5%
R9
12K/0805/5%
D4
5V/D1206
R17
3K/0603/5%
PWMor DC Input(0V-5V)
U2
PS2581AL2
R8
3.01/0805/5%
D6
18V/D1206
4
2
+
C14
330nF/0603
1
3
R19
R20
1M/0603/1%/NC
20K/0603/1%
C8
10nF/0603
R23
2K/0603/1%
D5
IN4007
R6
0.33/1206/1%
C9
10nF/0603
C3
470uF/50V/105C
R21
560K/0603/1%
R22
12K/0603/1%
LED-
LED+
TP4
LED-
TP3
LED+
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5
10 0K/12 06 /5 %
R11
33K/0603/1%
C7
10nF/0603
3
R18
3K/0603/5%
5
2
2
3
7. BOM
COUNT
REFDES
DESCRIPTION
PART NUMBER
MFR
MB39C602
PS2581AL2
FUJITSU
NEC
SGM321
SGMICRO
MB6S
MIC
1
1
U1
U2
LED driver IC, SOP-8
Optical coupling
1
U3
Rail-to-rail op amp，SOT-235
1
BR1
4-pin SMD rectifier bridge,1000V/1A,SO-8
1
C1
2-pin DIP package CBB capacitor,22nF/630V
STD
STD
1
C2
15nF/200V/1206
STD
STD
1
C3
2-pin DIP package capacitorelectrolytic，
470uF/50V/105°C,Size:10mm*20mm
STD
STD
1
5
2
STD
STD
STD
STD
STD
STD
STD
STD
1
1
3
2
1
1
1
1
1
1
1
1
1
1
1
2
1
1
1
1
1
C4
0.1uF/50V/0805
C5,C6,C7,C8,C9 10nF/50V/0603
C10,C11
100nF/50V/0603
2-pin DIP package capacitorelectrolytic，
C12
100uF/25V/105°C,Size:6mm*8mm
C13
1uF/50V/0603
C14
330nF/50V/0603
R1,R2,R3
560K/5%/0805
R4,R5
100K/5%/1206
R6
0.33Ω/1%/1206
R7
4.99Ω/5%/0603
R8
3Ω/5%/0805
R9
12K/5%/0805
R10
110K/1%/0805
R11
33K/1%/0603
R12
39K/1%/0603
R13
100K/1%/0603
R14
10K/1%/0603
R15
240K/1%/0603
R16
10K/5%/0603
R17,R18
3K/5%/0603
R19
20K/1%/0603
R20
1M/1%/0603/NC
R21
560K/1%/0603
R22
12K/1%/0603
R23
2K/1%/0603
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
STD
1
D1
2-pin SMD fast recovery rectifier,1000V/1A,SMA
STTH108A
ST
1
D2
2-pin SMD fast recovery rectifier,1000V/2A,DO-15
HER208
MIC
1
D3
Super fast recovery rectifier，175V/200mA,SOT-23
MMBD1404
Fairchild
1
1
1
1
D4
D5
D6
Q1
5.1V Zener diode,1206
1000V/1A,DO-41
18V Zener diode,1206
N-MOSFET,650 V, 7.3 A, 0.6 W, TO-220
1N5231B
IN4007
1N5246B
SPA07N60C3
DIODES
MIC
DIODES
Infineon
1
T1
Transformer，EF20/PC44,PIN5+5
EF20/PC44
BZD
1
6
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
8. Transformer Specification
Transformer (110vac) Description
The core specifications: EF20/PC44 ; Operating frequency: 50KHz ;
Bobin size see below (horizontal 5 +5 Pin) .
1.Description ：(Cut 2,6,7,9 Pin)
The primary winding (w1, w2, w3) using a sandwich winding, the
reference winding see below. W1, W3, W4 winding plus retaining wall.
Core reference gap 0.4mm (air gap opening in the column), to ensure
1pin to 3pin inductance measured at 50KHz conditions 650uH error of ±
10%.Bonded core, curing, dipping, drying, retest inductance value.
2. Electrical block diagram
7
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9. Property data
9-2 Dimming Range VS Po
9-1 Dimming Range VS ILED
VIN:110VAC/60Hz, Ta=25℃, 9 LED in series
VIN:110VAC/60Hz, Ta=25℃, 9 LED in series
0.35
Output Power(W)
0.3
ILED(A)
0.25
0.2
0.15
0.1
0.05
0
10
9
8
7
6
5
4
3
2
1
0
PWM Duty Cycle
PWM Duty Cycle
9-3 Line Regulation
9-4 Line Regulation
VIN:110VAC/60Hz, TA=25℃, 9 LED in series
0.04
0.3
0.035
0.25
0.03
0.2
ILED(A)
ILED(A)
VIN:110VAC/60Hz, TA=25℃, 9 LED in series
0.35
0.15
0.1
0.02
0.015
0.01
0.05
0
0.025
0.005
190
200 210 220 230 240
PWM Duty Cycle=100%
0
250
8
190
200
210 220 230 240
PWM Duty Cycle=0%
250
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
VAC=110VRMS, 60Hz, Ta = +25°C, LED : 9 pcs in series
9-6 Turn-Off Waveform
9-5 Turn-On Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
PWM Duty Cycle: 0%
PWM Duty Cycle: 0%
ILED
9-8 Turn-Off Waveform
9-7 Turn-On Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
ILED
PWM Duty Cycle: 50%
PWM Duty Cycle: 50%
9-9 Turn-On Waveform
9-10 Turn-Off Waveform
Vin
Vin
Iac
Iac
VOUT
VOUT
ILED
ILED
PWM Duty Cycle: 100%
PWM Duty Cycle: 100%
9
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
VAC=110VRMS, 60Hz, Ta = +25°C, LED : 9 pcs in series
9-11 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 0%
9-12 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 50%
9-13 Switching Waveform
VSW(Q1 drain)
VOUT
IOUT
PWM Duty Cycle: 100%
10
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
10. Evaluation board picture
Top View
Bottom View
11
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
12. Revision History
Name
Version
MB39C602-EVB-CN05
Rev 1.0
Remark
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for
the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU
SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When
you develop equipment incorporating the device based on such information, you must assume any responsibility arising out
of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as
license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of
FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any
third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no
liability for any infringement of the intellectual property rights or other rights of third parties which would result from the
use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or
damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the
regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Evaluation board Manual
11W Down Light AC85-265V
MB39C602-EVBSK-01-EX
Rev 1.0
Feb. 2013
1. General Description
MB39C602-EVBSK-01-EX can light the LED, when the LED load is connected with
the output and the AC source is impressed to the input.
LED load: 390mA / 7-11 pieces in series
2. Evaluation Board Specification
Ta = +25°C , fac=50Hz/60Hz
ITEM
MIN
TYP
MAX
UNIT
Voltage range (RMS)
VIN
85
100/220
265
VAC
Output voltage
VOUT
19
27
33
V
Output load current
IOUT
390
mA
Switching frequency
fSW
100
kHz
3. Pin Descriptions
Pin Name
Description
AC1
AC line input (Load)
AC2
AC line input (Neutral)
LED_p
LED output (+)
LED_n
LED return point (-)
1/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
4. Setup
CAUTION
High voltages exist on this EVB. Please handle with care.
Don’t touch EVB when powered.
(1) Recommended Test Setup
- Connect AC power to AC1/AC2.
- Connect LED and Test Equipment to LEDp/LEDn.
- Output Load: LED: 9 pieces in series (Vf=3V at 390mA)
AC Power Supply
VAC:100Vrms or 220Vrms
DMM
IOUT
+
DMM
VOUT
+
(2) Test method
- Input AC power to AC1/AC2.
- It is correct when light LED and Vout=27V, Iout=390mA between LEDp and LEDn.
2/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. Evaluation Board Layout
MB39C602-EVBSK-01-EX (Top View)
Top Side
Bottom Side
3/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Board Layout (Top View)
Top Side
Bottom Side
4/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
6. Circuit Diagram
5/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
7. Circuit Parts List
№
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
回路記号
COMPONENT
M1
T1
T2
F1
IC5
Q1
U2
BR1
D1
D3
D4
D5
D8
VR1
C2
C3
C4
C5
C6, C7
C8
C9
C10, C15, C17, C18, C19
C11
C13
C16
C21
R1, R2, R31
R4
R11
R12
R13
R14, R30
R15
R16
R17
R18
R19
R23
R24, R35
R33
R26
R29
R32
R40
名称・仕様等
DESCRIPTION
IC PWM CTRLR CASCODE 8-SOIC
TRANSFORMER FLYBACK EE20/10/6
IND COMMON MODE CHOKE 40MH
Fuse,axial, fast acting, 2.5 A, 250V, 0.160 x 0.400 inch
IC OPAMP GP R-R 1MHZ SGL SOT23-5
MOSFET N-CH 650V 7.3A TO-220FP
OPTO ISOLATOR TRANSISTOR OUTPUT
IC RECT BRIDGE 0.5A 600V 4SOIC
DIODE ULTRA FAST 800V 1A SMA
DIODE ULTRA FAST 200V SOT-23
DIODE ZENER 18V 225MW SOT-23
DIODE GPP FAST 1A 600V DO-41
SHUNT REGULATOR 5.0V SOT-23
SUR ABSORBER 7MM 430V 1250A ZNR
CAP CER 15000PF 250V X7R 1206
CAP CER 10000PF 50V X7R 0603
CAP CER .1UF 25V X7R 10% 0603
CAP 100UF 25V ELECT RADIAL 2.5MM
CAP CER 2.2UF 100V X7R 1210
CAP 1000UF 50V ELECT HE RADIAL
CAP .022UF/630VDC METAL POLY
CAP CER 10000PF 50V X7R 0603
CAP CER 2.2NF X1/Y1 RADIAL
CAP CER 0.33UF 16V X7R 0603
CAP CER .1UF 25V 0805
CAP .022UF/305VAC X2 METAL POLYPRO
RES 560K OHM 1/4W 1% 1206 SMD
RES 75.0K OHM 1/4W 1% 1206 SMD
RES 110K OHM, 1/8W, 1%, 0603 SMD
RES 33K OHM 1/10W 1% 0603 SMD
RES 39K OHM 1/10W 1% 0603 SMD
RES 620K OHM 1/10W 1% 0603 SMD
RES 100K OHM 1/10W 1% 0603 SMD
RES 5.1 OHM 1/10W 1% 0603 SMD
RES 3 OHM 1/8W 1% 0805 SMD
RES 10.0K OHM 1/10W 1% 0603 SMD
RES .33 OHM 1/4W 1% 1206 SMD
RES 20K OHM 1/10W 1% 0603 SMD
RES 3K OHM 1/10W 1% 0603 SMD
RES 1.00M OHM 1/10W 1% 0603 SMD
RES 2.00K OHM 1/10W 1% 0603 SMD
RES 12K OHM 1/10W 1% 0603 SMD
RES 18K OHM 1/10W 1% 0603 SMD
JUMPER (RES 0.0 OHM 1210)
6/ 13
指定型格
PART No.
MB39C602
750811146
750311650
026302.5MXL
LMV321IDBVR
SPA07N60C3
PS2561L-1-A
MB6S
RS1K-13-F
MMBD1404
BZX84C18LT1G
UF4005
LM4040C50IDBZT
ERZ-V07D431
GRM31BR72E153KW01L
GRM188R71H103KA01D
GRM188R71E104KA01D
EKMG250ELL101MF11D
GRM32ER72A225KA35
EKMG500ELL102MK25S
ECQE6223KF
GRM188R71H103KA01D
DE1E3KX222MA4BL01
C0603C334K4RACTU
GRM21BR71E104KA0
B32921C3223M
RK73H2BTTD5603F
RK73H2BTTD7502F
RK73H1JTTD1103F
RK73H1JTTD3302F
RK73H1JTTD3902F
RK73H1JTTD6203F
RK73H1JTTD1003F
RK73H1JTTD5R10F
RK73H2ATTD3R00F
RK73H1JTTD1002F
ERJ-8RQFR33V
RK73H1JTTD2002F
RK73H1JTTD3001F
RK73H1JTTD1004F
RK73H1JTTD2001F
RK73H1JTTD1202F
RK73H1JTTD1802F
RK73Z2E
製造元
VENDOR
Fujitsu
Wurth
Wurth
Littelfuse Inc
Texas Instruments
Infineon
CEL
Fairchild
Diodes
Fairchild
On Semi
Fairchild
Texas Instruments
Panasonic
muRata
muRata
muRata
Nippon Chemi-con
muRata
Nippon Chemi-con
Panasonic
muRata
muRata
Kemet
muRata
Epcos
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
KOA
Panasonic
KOA
KOA
KOA
KOA
KOA
KOA
KOA
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
8. Application Note
8.Application Note will release by Rev2.0.
7/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9. Performance Data
9-1 Efficiency
9-2 Power Factor
Efficiency - AC Power Voltage
Power Factor - AC Power Voltage
100%
1.00
0.99
90%
85%
Power Factor PF
Conversion Efficiency η [%]
95%
60Hz
50Hz
80%
75%
70%
60Hz
50Hz
0.98
0.97
0.96
65%
LED 9 pcs in series
LED 9 pcs in series
60%
80
0.95
120
160
200
240
AC Power Voltage Vac [Vrms]
80
9-3 Line Regulation
120
160
200
240
AC Power Voltage Vac [Vrms]
9-4 Load Regulation
Line Regulation
Load Regulation
450
450
60Hz
50Hz
430
420
410
400
390
380
370
LED 9 pcs in series
360
430
420
410
400
390
380
VAC=100VRMS ,220VRMS
370
LED ; 7- 11 pieces in series
360
350
80
100V/60Hz
220V/50Hz
440
Output Current ILED [mA]
Output Current ILED [mA]
440
120
160
200
240
AC Power Voltage Vac [Vrms]
8/ 13
350
20
25
30
Output Voltage VLED[V]
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
35
VAC=100VRMS, 60Hz, LED ; 9 pcs in series
9-5 Output Ripple
9-6 Switching Waveform
VSW(Q1 drain)
VBULK（D1 +）
IAC
VOUT
IOUT
IOUT
9-8 Turn-Off Waveform
9-7 Turn-On Waveform
VBULK
VBULK
VDD
VDD(M1 VDD)
VOUT
VOUT
IOUT
IOUT
9-9 LED Open Waveform
VSW
VOUT
IOUT
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Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
VAC=220VRMS, 50Hz, LED ; 9 pcs in series
9-10 Output Ripple
9-11 Switching Waveform
VBULK（D1 +）
IAC
VOUT
VSW(Q1 drain)
IOUT
IOUT
9-12 Turn-On Waveform
9-13 Turn-Off Waveform
VBULK
VBULK
VDD
VDD(M1 VDD)
VOUT
VOUT
IOUT
IOUT
9-14 LED Open Waveform
VSW
VOUT
IOUT
10/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9-15 EVB Temperature
VAC=100VRMS 60Hz LED ; 9 pcs in series
Top Side
Bottom Side
VAC=220VRMS 50Hz LED ; 9 pcs in series
Top Side
Bottom Side
11/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
10. Evaluation board Externals
Top View
Board size： 55 x 55 x H 32 mm
Bottom View
12/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
11. Order Number
Part number
EVB version
MB39C602-EVBSK-01-EX
Rev 1.0
Remarks
All Rights Reserved.
The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not
intended to be incorporated in devices for actual use.
Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use
of this information or circuit diagrams.
FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment,
industrial, communications, and measurement equipment, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human
lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems,
atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with
FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior
approval.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products
from Japan.
13/ 13
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Evaluation board Manual
15W non-Isolation Bulb AC100V
MB39C602-EVBSK-02-EX
Rev 1.0
Feb. 2013
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
1. General Description
MB39C602-EVBSK-02-EX can light the LED, when the LED load is connected with
the output and the AC source is impressed to the input.
LED load: 550mA / 7-11 pieces in series
2. Evaluation Board Specification
Ta = +25°C , fac=50Hz/60Hz
ITEM
MIN
TYP
MAX
UNIT
Voltage range (RMS)
VIN
85
100
144
VAC
Output voltage
VOUT
19
27
31
V
Output load current
IOUT
550
mA
Switching frequency
fSW
100
kHz
3. Pin Descriptions
Pin Name
Description
AC1
AC line input (Load)
AC2
AC line input (Neutral)
LED_p
LED output (+)
LED_n
LED return point (-)
1/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
4. Setup
CAUTION
High voltages exist on this EVB. Please handle with care.
Don’t touch EVB when powered.
(1) Recommended Test Setup
- Connect AC power to AC1/AC2.
- Connect LED and Test Equipment to LEDp/LEDn.
- Output Load: LED: 9 pieces in series (Vf=3V at 550mA)
AC Power Supply
VAC:100Vrms
DMM
IOUT
+
-
DMM
VOUT
+
-
(2) Test method
- Input AC power to AC1/AC2.
- It is correct when light LED and Vout=30V, Iout=550mA between LEDp and LEDn.
2/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5. Evaluation Board Layout
MB39C602-EVBSK-02-EX (Top View)
Top Side
Bottom Side
3/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Board Layout (Top View)
Top Side
Bottom Side
4/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
6. Circuit Diagram
PF improvement circuit
Switching circuit
Commutation circuit
IC Peripheral circuit
5/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
7. Circuit Parts List
No
COMPONENT
DESCRIPTION
PART No.
VENDOR
1
IC
Driver IC for LED Lighting, SOL8
MB39C602
2
C1
Capacitor, alumninum electrolytic, 47uF, 250V, 12.5x20
Fujitsu
EKXG251ELL470MK20S
Nippon Chemi-con
3
C2
4
C3
Capacitor, ceramic, 10uF, 50V, X7R, +/-10%, 1210
GRM32DF51H106ZA01L
muRata
5
C4
Capacitor, alumninum electrolytic, 100uF, 50V, 8x11.5
EKMG500ELL101MHB5D
Nippon Chemi-con
6
C5, C6
Capacitor, ceramic, 0.01uF, 50V, X7R, +/-10%, 0603
GRM188R71H103KA01D
muRata
7
C7
Capacitor, ceramic, 0.1uF, 25V, X7R, +/-10%, 0603
GRM188R71E104KA01D
muRata
8
C8
Capacitor, alumninum electrolytic, 100uF, 25V, 6.3x11
EKMG250ELL101MF11D
Nippon Chemi-con
9
C9
Capacitor,polyester film, 0.22uF, 250V, 12x5.5x10.5
ECQ-E2224KF
Panasonic
10
D1
Diode, bridge rectifier, 0.5A, 600V, SO-4
MB6S
Fairchild
11
D2
Diode, ultra fast rectifier, 1A, 400V, SMA
ES1G
Fairchild
12
D3
Diode, Schottky, 1A, 30V, SOD-323
SDM100K30
Diodes, Inc
13
D4
Diode, ultra fast, 1A, 200V, SMA
CSFA103-G
On Semiconductor
14
D5
Diode, Zener, 18V, 500mW, SOD-123
MMSZ18T1G
ON Semiconductor
15
D6, D7
Junper
RK73ZW2H
KOA
16
D8, D9
17
F1
Fuse, axial, fast acting, 2.5A, 250V, 0.160 inch x 0.400 inch
026302.5MXL
Littelfuse Inc
18
L1
Inductor, 100uH, 0.67Amax, 0.39ohmmax
22R104C
muRata Ps
19
T1
Coupling inductor, 280uH, 1.4A, Na/Nm=0.6
EI-191-03377-T
SUMIDA
20
Q1
MOSFET, N-channel, 650V, 7.3A, 0.6W, TO-220
FDPF10N60NZ
Fairchild
21
R1
NTC thermistor, 8.0Ohm, 1.5A
NTPA78R0LBMBO
muRata
22
R2, R3
Resistor, chip, 1.00MOhm, 1/8W, +/-1%, 0805
RK73H2ATTD1004F
KOA
23
R4
Resistor, chip, 3.0Ohm, 1/8W, +/-1%, 0805
RK73H2ATTD3R00F
KOA
24
R5
Resistor, chip, 5.1Ohm, 1/10W, +/-1%, 0603
RK73H1JTTD5R10F
KOA
25
R6
Resistor, chip, 1.00MOhm, 1/10W, +/-1%, 0603
RK73H1JTTD1004F
KOA
26
R7
Resistor, chip, 110kOhm, 1/10W, +/-1%, 0603
RK73H1JTTD1103F
KOA
27
R8
Resistor, chip, 33kOhm, 1/10W, +/-1%, 0603
RK73H1JTTD3302F
KOA
28
R9
Resistor, chip, 91kOhm, 1/10W, +/-1%, 0603
RK73H1JTTD9102F
KOA
29
R10
Resistor, chip, 750kOhm, 1/10W, +/-1%, 0603
RK73H1JTTD7503F
KOA
6/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
8. Application Note
8.Application Note will release by Rev2.0.
7/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
9. Performance Data
5-1 Efficiency
5-2 Power Factor
Efficiency - AC Power Voltage
Power Factor - AC Power Voltage
100%
1.00
60Hz
50Hz
0.80
90%
85%
80%
75%
70%
Vac=100VRMS
65%
LED 9 pcs in series
60%
85
60Hz
50Hz
0.90
Power Factor PF
Conversion Efficiency η [%]
95%
95 105 115 125 135 145
AC Power Voltage Vac [Vrms]
5-3 Line Regulation
0.70
0.60
0.50
0.40
0.30
0.20
Vac=100VRMS
0.10
LED 9 pcs in series
0.00
85
95 105 115 125 135 145
AC Power Voltage Vac [Vrms]
5-4 Load Regulation
Line Regulation
Load Regulation
650
650
60Hz
50Hz
610
590
570
550
530
510
490
Vac=100VRMS
470
60Hz
50Hz
630
Output Current ILED [mA]
Output Current ILED [mA]
630
LED 9 pcs in series
450
610
590
570
550
530
510
490
Vac=100VRMS
470
LED ; 7- 11 pieces in series
450
85
95 105 115 125 135 145
AC Power Voltage Vac [Vrms]
8/ 12
20
25
30
Output Voltage VLED[V]
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
35
5-5 Output Ripple
5-6 Switching Waveform
VSW(Q1 drain)
VBULK(D1 +)
Iac
VOUT
IOUT
IOUT
5-8 Turn-Off Waveform
5-7 Turn-On Waveform
VBULK
VBULK
VDD
VDD(M1 VDD)
VOUT
VOUT
IOUT
IOUT
5-9 LED Open Waveform
VSW
VOUT
IOUT
Vac=AC100VRMS, fac=60Hz,LED ; 9 pieces in series
9/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
5-10 EVB Temperature
Top Side
84.9
℃
77.4
69.9
62.4
54.9
47.4
39.9
32.4
24.9
Bottom Side
84.9
℃
77.4
69.9
62.4
54.9
47.4
39.9
32.4
24.9
10/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
10. Evaluation board Externals
Top View
Board size： 44 x 44 x H 25 mm
Bottom View
11/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
11. Order Number
Part number
EVB version
MB39C602-EVBSK-02-EX
Rev 1.0
Remarks
All Rights Reserved.
The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not
intended to be incorporated in devices for actual use.
Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use
of this information or circuit diagrams.
FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment,
industrial, communications, and measurement equipment, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human
lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems,
atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with
FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior
approval.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products
from Japan.
12/ 12
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED