RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 50 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation 13.5 ± 0.3 * * * * * * * * 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximaly ) 2.0 ± 0.2 10 7.5 7.5 ±0.2 ±0.2 ±0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 5000 RBV 5001 RBV 5002 RBV 5004 RBV 5006 RBV 5008 RBV 5010 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V RATING Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 55°C IF(AV) 50 A IFSM 400 A I2t 660 A 2S Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. VF 1.1 V Maximum DC Reverse Current Maximum Forward Voltage per Diode at IF = 25 A Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA RθJC 1.5 °C/W TJ 10 °C TSTG - 40 to + 150 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Note : 1. Thermal Resistance from junction to case with units mounted on heatsink. Page 1 of 2 RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 40 30 20 10 P.C. Board Mounted with SINE WAVE R-Load 0 0 25 50 75 600 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 60 100 125 150 500 TJ = 50 °C 400 300 200 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 175 1 2 4 6 10 20 40 60 10 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 100 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES TJ = 100 °C 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 12 0 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS Page 2 of 2 1.0 1.8 140