WFF5N60
Wisdom
N-Channel MOSFET
Features
RDS(on) (Typ 2.0 ?
¦
Gate Charge (Typical 11nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
¦
¦
¦
{
Symbol
¦
)@V GS=10V
?
?
1. Gate{
?
?
?
{
General Description
This Power MOSFET is produced using Wisdom’
s
advanced planar stripe, DMOS technology. This latest technology
has been especially designed to minimize on-state resistance,
have a high rugged avalanche characteristics. These devices are
well suited
Symbol
VDSS
ID
(
3. Source
TO-220F
for high efficiency switch mode pow er supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
2. Drain
1
3
2
* D rain current limit ed b y junction temperat ure)
Value
Units
Drain to So urce Voltag e
Parameter
600
V
Continu ous Drain Cu rrent(@ T C = 25 °C)
4.5*
A
Continu ous Drain Cu rrent(@ T C = 10 0°C)
2.6*
A
18*
A
±30
V
mJ
ID M
Drain Curr ent Pulse d
VGS
Gate to Sou rce Voltage
EAS
Single Pulse d Av alanche Energy
(Note 2)
210
EAR
Repetitiv e Av alanche En ergy
(Note 1)
3.3
mJ
dv /dt
Peak Diod e Recov ery dv /dt
(Note 3)
4.5
V/ns
33
W
PD
TST G, TJ
TL
(Note 1)
Total P o wer Dissipation( @TC = 25 °C)
Derating Factor abov e 25 °C
Oper ating Ju nction Temp eratur e & Storage Tempe ratur e
Maxim um Lead Temp eratur e for soldering pur pose,
1/8 from Case for 5 seconds.
0.26
W/°C
- 55 ~ 1 50
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Min.
Typ.
Max.
Units
R J C
Thermal Resistanc e, Junction-to-C ase
-
-
3.79
°C/W
R JA
Thermal Resistanc e, Junction-to- Ambi ent
-
-
62.5
°C/W
Copyright@Wisdom All rights r eser ved.
WFF5N60
Electrical Characteristics
Symbol
( TC = 25 °C unl ess other wise n oted )
Parameter
Test Conditio ns
M in
Typ
M ax
Units
600
-
-
V
I D = 250uA, reference d to 25 °C
-
0.6
-
V/°C
VDS = 60 0V, V GS = 0V
-
-
10
uA
VDS = 48 0V, T C = 125 °C
-
-
100
uA
VGS = 3 0V,
-
-
100
nA
-
-
-100
nA
2.0
-
4.0
V
-
2.0
2.5
?
Off Characteristics
Drain- Sou rce Br eakdo wn Voltag e
BVD S S
?
?
B VDSS / Break down Volta ge Temp erature
coeff icient
T
VGS = 0V, I D = 2 50uA
J
I DSS
Drain- Sou rce Le akage Curre nt
Gate- Sou rce Leak age, For ward
I GSS
Gate-so urce L eakag e, Rev erse
VGS = - 30V,
V DS = 0V
V DS = 0V
On Characteris tics
VGS (th)
R DS(O N)
Gate Thres hold Vo ltage
VDS = V G S , I D = 250 uA
Static Drain-Source O n-state Resistance
VGS =1 0 V, I D = 2.0A
Dynamic Char acteristics
C iss
Input Capacitance
-
500
650
C oss
Output Cap acitance
-
50
70
C rss
Rev erse Transf er Capacitance
-
7.0
10
-
10
-
35
-
45
40
VGS =0 V, V DS =2 5V, f = 1MH z
pF
Dynamic Char acteristics
t d(o n )
tr
t d(off)
Turn -on Delay Time
VDD =30 0V, I D =4.5A, R G =25?
Rise Time
Turn -off Delay Time
(Note 4, 5)
ns
Fall Time
-
Qg
Total Gate Char ge
-
11
14
Qgs
Gate- Sou rce Char ge
-
2.5
-
Qgd
Gate-Drain Charge(Miller Charge)
-
4.0
-
M in.
Typ.
Max.
-
-
4.5
-
-
18
tf
VDS =480 V, V GS =1 0V, I D =4.5A
(Note 4, 5)
nC
Source-Drain Diode Ratings and Characteristics
Sym bol
Parameter
IS
Continu ous Source Cur rent
I SM
Pulsed Sou rce Curr ent
VSD
Diode For ward Volta ge
t rr
Rev erse Recov ery Time
Qr r
Rev erse Recov ery Charge
Test Conditio ns
Integral Rev erse p-n Ju nction
Diode in the MOSFET
I S =4.5A, V GS =0 V
I S =4.5A, V GS =0 V, dI F/dt=1 00A/us
?
NOTES
1. Repeativity rati ng :pulse width li mited by junction temperature
2. L = 19mH, IAS =4.5A, VDD = 50V, RG = 25? , Starti ng TJ = 25°C
3. ISD = 4.5A, di/dt = 200A/us, VDD = BVDSS , Starting TJ = 25°C
4. Pulse Test : Pulse Widt h = 300us, Duty Cycl e = 2%
5. Essenti all y independent of operating temper ature.
Copyright@Wisdom All rights r eser ved.
Unit.
A
-
-
1.4
V
-
300
-
ns
-
2.2
-
uC
Typical Characteristics
1
10
Top :
V
VGS
15.0
1
10
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bott om :
5.0
0
10
150o C
0
10
25o C
-1
10
? Notes :
-55o C
? N otes :
1. 250µs Pulse Tes t
2. T C = 25?
1. VD S = 40 V
2. 250µ s Puls e Tes t
-1
10
-1
0
10
2
1
10
10
4
6
8
10
VGS, Gate- Source Voltage [V]
V DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Trans fer Characteristics
12
1
10
10
VG S
= 10V
8
VG S
6
=
20V
0
10
4
150?
25?
? Notes :
2
1. VGS = 0V
2. 250µ s Puls e Tes t
? Note : T = 25?
J
-1
0
10
0
2
4
6
8
10
12
0.2
ID, Dr ain Current [A]
0.4
0.6
0.8
1.0
1.2
1. 4
V SD, Source-Dr ain voltage [V]
Figure 3. On-Resistance Variation v s
Drain Current and Ga te Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
1000
C iss = C gs + C gd (Cd s = shor ted)
C oss = C + C
ds
gd
Crs s C
=g d
Ci s s
VD S
= 120V
VD S
= 300V
VD S
= 480V
10
8
6
500
Co s s
4
? N ote s :
Cr s s
1. VGS = 0 V
2. f = 1 MH z
2
? N ote : I = 4.5 A
D
0
10
-1
10
0
10
1
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
0
4
8
12
16
QG , T ot al Gate Charge [ nC]
Figure 6. Gate Charge Characteristics
20
Typical Characteristics
(Continued)
1.2
3. 0
2. 5
1.1
2. 0
1.0
1. 5
1. 0
? Notes :
0.9
1. VGS =0 V
2. ID = 250 µ A
0.8
-100
-50
0
50
100
? Notes :
0. 5
150
1. VGS = 10 V
2. ID = 2.0 A
0. 0
-100
200
-50
0
o
50
100
150
o
TJ, JunctionTemperature[ C]
TJ , Junction Temperatur e [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2
10
1
10
0
10
-1
10
-2
10
10
0
1
2
10
3
10
10
V DS, Dr ain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
10
Figure 10. Maximum Drain Current
vs Case Temperature
0
D= 0 . 5
?
0. 2
N
1.
25
3.
=
.
0. 1
10
DM
o te s :
Z?
(t) = 1 . 2 /W
JC
?
t1 /t2
D u ty F a c to r , DZ
?
TJ M
*
- TC
M ax .
JC
(t)
= P
-1
0. 05
PD M
0. 0 2
t1
0. 0 1
10
s i ng le
p ul s
t2
-2
10
-5
10
-4
10
-3
t 1, S q u a re
10
W a ve
-2
P u ls e
10
-1
D u r a ti o n
10
0
[s
ec ]
Figure 11. Transient Thermal Response Curve
10
1
200
Gate Charge Test Circuit & Wav eform
12V
VGS
Same Type
asDUT
50KO
Qg
200nF
10V
300nF
VGS
Qgs
VDS
Qgd
DUT
3mA
Charge
Resistiv e Switching Test Circuit & Wav eforms
V
D
S
R
L
V
D
S
90
%
V
D
D
V
G
S
R
G
V
G
S
D
U
T
1
0
V
10
%
td
(o
n
)
tr
td
(o
ff)
ton
tf
toff
Unclamped Inductiv e Switching Test Circuit & Wav eforms
B
V
D
S
S
1
---E
LIAS2 -------------------A
S=
2
BV
D
S
S-V
D
D
L
V
D
S
B
V
D
S
S
IAS
ID
R
G
10
V
V
D
D
D
U
T
tp
ID(t)
V
D
D
V
t)
D
S(
tp
T
im
e
Peak Diode Recov ery dv /dt Test Circuit & Wav eforms
+
D U T
V
D S
_
I
S D
L
D riv e r
R
V
V GS
( D r iv e
r )
G
S a m e T yp
e a s D U
T
G S
D
---
=
d v /d t
•
ISD
c o n t r o lle d
c o n t r o ll e d
G a te
o d
P u ls e
P e ri
G
R
p u ls e
p e r io d
D io d e
F o rw
1 0 V
a rd
C
d i/ d t
IR
B o d y
V D
( D U
T )
b y
b y
G a t e P u ls e W
id th
- - --- --- - - -- - --- - - - --- -
IFM , B o d y
u rr e n t
ISD
( D U
T )
•
V
M
D io d e
R
e v e rs e
C
u rr e n t
S
B o d y
V
D io d e
R
B o d y
F o rw
d v /d t
V
S D
D io d
e
a r d V o lt a g e
ro p
e c o v e ry
D
D D
D D
FS ( CHINA ) Package Dimensions
TO-220F