CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURES TO-92 High voltage www.haorm.cn MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO -5 V IC Emitter-Base Voltage Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Storage Temperature ℃ Tstg -55 to +150 ℃ 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) CBO IC= -100μA, IE=0 -400 V Collector-emitter breakdown voltage V(BR) CEO IC= -1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR) EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-400V, IB=0 -5 μA Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 μA hFE(1) VCE=-10V, IC=-10mA 80 hFE(2) VCE=-10V, IC=-1mA 70 hFE(3) VCE=-10V, IC=-100mA 60 DC current gain 300 VCE (sat) IC=-10mA, IB=-1mA -0.2 V VCE (sat) IC=-50mA, IB=-5mA -0.3 V VBE (sat) IC=-10mA, IB= -1mA -0.75 V fT VCE=-20V, IC=-10mA f =30MHz Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency 50 MHz