ETC APH502

APH502
34 – 36 GHz High Power Amplifier
Product Datasheet
Revision: June 2006
Applications
 EW Radar
X=2820µm Y=1260µm
Product Features
Product Description
 RF Frequency: 34 to 36 GHz
The APH502 monolithic HEMT amplifier is a
 Linear Gain: 14 dB Typ.
broadband, two-stage power device designed for
 Psat: 30 dBm typ.
use in either linear or saturated power applications .
To ensure rugged and reliable operation, HEMT
 IP3: 35 dBm typ.
devices are fully passivated. All RF ports are DC
 Die Size: 3.6 sq. mm.
blocked. Both bond pad and backside metallization
 DC Power: 5 VDC @ 810 mA
are Ti/Au, which is compatible with conventional die
attach, thermocompression, and thermosonic wire
bonding assembly techniques.
Performance Characteristics (Ta = 25°C)
Specification
Frequency
Linear Gain
Psat
IP3
Input Return Loss
Output Return Loss
Vd1, Vd2
Vg1, Vg2
Id1
Id2
Min
34
12
9
3
Typ
14
30
35
11
5
5
-0.3
270
540
Max
Unit
36
GHz
dB
dBm
dBm
dB
dB
V
V
mA
mA
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Vd1, Vd2
Id1
Id2
Vg1, Vg2
Input drive level
Assy. Temperature
(60 seconds)
Min
-1
Max
Unit
5.5
300
600
+0.3
19
300
V
mA
mA
V
dBm
deg. C
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the ITAR. This product is for
U.S. Sales only. Export out of the U.S. requires a U.S. State Department export license.
Velocium Products • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: st-velocium.sales@ngc.com • Web: www.st.northropgrumman.com/velocium/
Page 1 of 4
APH502
34 – 36 GHz High Power Amplifier
Product Datasheet
Revision: June 2006
Measured Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd2 = 5V, Id1 = 270 mA, Id2 = 540 mA
Freq GHz S11 Mag
32
0.381
32.5
0.347
33
0.324
33.5
0.293
34
0.268
34.5
0.242
35
0.222
35.5
0.208
36
0.225
36.5
0.287
37
0.366
37.5
0.439
38
0.502
S11 Ang S21 Mag
-135.685
3.279
-140.763
3.47
-146.294
3.595
-153.793
3.959
-162.459
4.273
-176.111
4.594
165.295
5.099
138.593
5.544
106.651
5.893
73.474
6.132
44.801
5.964
21.251
5.443
2.395
4.76
S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
-145.511
0.004
87.467
0.706
104.516
-158.995
0.004
76.93
0.67
100.176
-172.813
0.003
103.7
0.641
96.883
171.634
0.005
117.929
0.616
92.761
157.83
0.006
111.275
0.592
88.088
140.731
0.007
99.832
0.551
81.576
121.903
0.008
94.86
0.504
76.939
103.422
0.01
94.195
0.491
69.166
80.81
0.013
83.05
0.426
56.569
56.403
0.015
65.702
0.357
48.745
32.382
0.015
44.475
0.316
32.575
7.063
0.015
25.503
0.207
3.504
-15.087
0.014
19.685
0.078
-17.395
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the ITAR. This product is for
U.S. Sales only. Export out of the U.S. requires a U.S. State Department export license.
Velocium Products • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: st-velocium.sales@ngc.com • Web: www.st.northropgrumman.com/velocium/
Page 2 of 4
APH502
34 – 36 GHz High Power Amplifier
Product Datasheet
Revision: June 2006
Measured Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd2 = 5V, Id1 = 270 mA, Id2 = 540 mA
Linear Gain Versus Frequency
Pout Versus Frequency
18
12
10
Po u t (d Bm )
Gain (dB)
16
14
8
6
4
2
0
32
33
34
35
36
37
38
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
33.0
34.0
Frequency (GHz)
34
35
36
36.0
37.0
Output Return Loss Versus Frequency
Output Return Loss (dB)
Input Return Loss (dB)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
33
35.0
Frequency (GHz)
Input Return Loss Versus Frequency
32
IP3
P3dB
P1dB
37
38
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
32
Frequency (GHz)
33
34
35
36
37
38
Frequency (GHz)
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the ITAR. This product is for
U.S. Sales only. Export out of the U.S. requires a U.S. State Department export license.
Velocium Products • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: st-velocium.sales@ngc.com • Web: www.st.northropgrumman.com/velocium/
Page 3 of 4
APH502
34 – 36 GHz High Power Amplifier
Product Datasheet
Revision: June 2006
Die Size and Bond Pad Locations
RF IN
Vg1
X = 2820 µm ± 25 µm
Y = 1260 ± 25 µm
Bond Pad = 101 x 101 ± 0.5 µm
Chip Thickness = 101 ± 5 µm
Vd1
Vg2
RF OUT
Vd2
Suggested Bonding
RF OUT
RF IN
Vg1
100 pF
Vg1
.1µF
Vd1
10 Ohms
Vg2
Vd2
100 pF
100 pF
100 pF
.1µF
10 Ohms
Vd1
.1µF
.1µF
Vd2
Vg2
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the ITAR. This product is for
U.S. Sales only. Export out of the U.S. requires a U.S. State Department export license.
Velocium Products • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: st-velocium.sales@ngc.com • Web: www.st.northropgrumman.com/velocium/
Page 4 of 4