CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn D965 TRANSISTOR (NPN) TO-92 FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 1.EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Value 42 22 6 5 750 150 Units V V V A mW -55-150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V, IC=0 0.1 μA hFE(1) VCE=2V, IC= 0.15 mA 150 hFE(2) VCE= 2V,IC = 500 mA 340 hFE(3) VCE=2V, IC = 2A 150 DC current gain Collector-emitter saturation voltage fT Transition frequency CLASSIFICATION OF VCE(sat) 2000 IC=3000mA,IB=100 mA VCE=6V, IC=50mA,f=30MHz 0.35 150 hFE(2) Rank R T V Range 340-600 560-950 900-2000 V MHz Typical Characteristics D965