ETC FTA2N65

FTP02N65
FTA02N65
N-Channel MOSFET
Applications:
• Adaptor
• Charger
• SMPS Standby Power
• LCD Panel Power
VDSS
RDS(ON) (Max.)
ID
650V
5.0 Ω
2.0A
Features:
D
• Lead Free
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
G
Ordering Information
PART NUMBER
PACKAGE
BRAND
FTP02N65
TO-220
FTP02N65
FTA02N65
TO-220F
FTA02N65
Absolute Maximum Ratings
Symbol
Parameter
Drain-to-Source Voltage
ID
Continuous Drain Current
TO-220F
Not to Scale
FTP02N65
(NOTE *1)
FTA02N65
S
Continuous Drain Current
IDM
Pulsed Drain Current, VGS@ 10V
Units
650
2.0
ID@ 100 C
PD
TO-220
Not to Scale
G
D
S
TC=25 oC unless otherwise specified
VDSS
o
G
D
S
V
2.0*
Figure 3
(NOTE *2)
Power Dissipation
o
Derating Factor above 25 C
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=38 mH, ID=2.1 Amps
IAS
Pulsed Avalanche Rating
dv/dt
Peak Diode Recovery dv/dt
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
TJ and TSTG
Operating Junction and Storage
Temperature Range
A
Figure 6
54
21
W
0.43
0.17
W/ C
o
± 30
V
84
mJ
Figure 8
(NOTE *3)
3.0
300
260
V/ns
o
C
-55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
FTP02N65 FTA02N65
RθJC
Junction-to-Case
2.3
6.0
RθJA
Junction-to-Ambient
62
62
©2006 InPower Semiconductor Co., Ltd.
Units
o
C/W
Test Conditions
Water cooled heatsink, PD adjusted for
o
a peak junction temperature of +150 C.
1 cubic foot chamber, free air.
FTP02N60/FTA02N60 REV. A. April. 2006
OFF Characteristics
Symbol
o
TJ=25 C unless otherwise specified
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS /∆ TJ
BreakdownVoltage Temperature
Coefficient, Figure 11.
IDSS
IGSS
Min.
Typ.
Max.
Units
Test Conditions
650
--
--
V
--
0.7
--
V/ C
VGS=0V, ID=250µA
o
Reference to 25 C,
ID=250µA
--
--
25
o
Drain-to-Source Leakage Current
µA
--
--
250
Gate-to-Source Forward Leakage
--
--
100
Gate-to-Source Reverse Leakage
--
--
-100
ON Characteristics
Parameter
RDS(ON)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
VGS(TH)
Gate Threshold Voltage, Figure 12.
gfs
Forward Transconductance
Dynamic Characteristics
VGS=+30V
VGS= -30V
Min.
Typ.
Max.
Units
Test Conditions
--
4.0
5.0
Ω
2.0
--
4.0
V
VGS=10V, ID=1.2A
(NOTE *4)
VDS=VGS, ID=250µA
--
2.5
--
S
VDS=15V, ID=2.0A
(NOTE *4)
Essentially independent of operating temperature
Parameter
Min.
Typ.
Max.
Ciss
Input Capacitance
--
330
--
Coss
Output Capacitance
--
46
--
Crss
Reverse Transfer Capacitance
--
9.0
--
Qg
Total Gate Charge
--
12.5
--
Qgs
Gate-to-Source Charge
--
2.2
--
Qgd
Gate-to-Drain (“Miller”) Charge
--
6.0
--
Resistive Switching Characteristics
Symbol
VDS=520V, VGS=0V
o
TJ=125 C
TJ=25 oC unless otherwise specified
Symbol
Symbol
nA
VDS=650V, VGS=0V
Parameter
pF
nC
Test Conditions
VGS=0V
VDS=25V
f =1.0MHz
Figure 14
VDD=325V
ID=2.0A
Figure 15
Essentially independent of operating temperature
Min.
Typ.
Max.
td(ON)
Turn-on Delay Time
--
13
--
trise
Rise Time
--
13
--
td(OFF)
Turn-Off Delay Time
--
34
--
tfall
Fall Time
--
26
--
©2006 InPower Semiconductor Co., Ltd.
Units
Units
Test Conditions
VDD=325V
ns
ID=2.0A
VGS=10V
RG=18Ω
FTP02N60/FTA02N60 REV. A . April. 2006
Page 2 of 9
Source-Drain Diode Characteristics
Symbol
o
Tc=25 C unless otherwise specified
Parameter
Min.
Typ.
Max.
Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
2.0
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
8.0
A
Integral pn-diode
in MOSFET
VSD
Diode Forward Voltage
--
--
1.5
IS=2.0A, VGS=0V
trr
Reverse Recovery Time
--
172
258
V
ns
Qrr
Reverse Recovery Charge
--
0.75
1.13
µC
IF=2.0A, di/dt=100 A/µs
VGS=0V
Notes:
*1. TJ = +25 oC to +150 oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 2.0A di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2006 InPower Semiconductor Co., Ltd.
FTP02N60/FTA02N60 REV. A . April. 2006
Page 3 of 9
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
Duty Factor
ZθJC, Thermal Impedance
(Normalized)
1.000
50%
20%
10%
0.100
PDM
5%
2%
t1
1%
0.010
t2
NOTES:
DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x ZθJC x RθJC+TC
single pulse
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
tp, Rectangular Pulse Duration (s)
Figure 2. Maximum Power Dissipation
vs Case Temperature
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
2.5
50
ID, Drain Current (A)
PD, Power Dissipation (W)
60
40
30
20
10
2.0
1.5
1.0
0.5
0
0
25
50
75
125
100
25
150
50
TC, Case Temperature ( C)
V
= 15
V GS
6.0V
VGS =
VGS = 5.5V
3
VGS = 5.25V
2
VGS = 5.0V
1
VGS = 4.5V
RDS(ON), Drain-to-Source
ON Resistance (Ω)
ID, Drain Current (A)
10
PULSE DURATION = 250 µS
DUTY FACTOR = 0.5% MAX
TC = 25 oC
4
100
125
150
Figure5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
Figure 4. Typical Output Characteristics
5
75
TC, Case Temperature (oC)
o
PULSE DURATION = 250 µS
DUTY FACTOR = 0.5% MAX
TC = 25 oC
9
8
ID = 2A
ID = 1A
7
6
5
4
3
0
0
5
10
15
20
VDS, Drain-to-Source Voltage (V)
©2006 InPower Semiconductor Co., Ltd.
25
4
5
6
7
8
9
10
11
12
13
14
15
VGS, Gate-to-Source Voltage (V)
FTP02N60/FTA02N60 REV. A . April. 2006
Page 4 of 9
Figure 6. Maximum Peak Current Capability
IDM, Peak Current (A)
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 – T C
--------------------125
10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1E+0
10E+0
tp, Pulse Width (s)
Figure 8. Unclamped Inductive
Switching Capability
Figure 7. Typical Transfer Characteristics
6
10.0
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VDS = 10 V
IAS, Avalanche Current (A)
ID, Drain-to-Source Current (A)
7
5
4
3
2
+150 oC
+25 oC
1
-55 oC
STARTING TJ = 25 oC
1.0
STARTING TJ = 150 oC
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
5.5
0.1
1E-6
6.5
10E-6
10
V
6
GS
RDS(ON), Drain-to-Source
Resistance (Normalized)
RDS(ON), Drain-to-Source
ON Resistance (Ω)
V
= 10V
GS
= 20V
5
4
3
2
1
0
1
2
3
100E-3
2.6
2.4
PULSE DURATION = 2 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
7
10E-3
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
8
1E-3
tAV, Time in Avalanche (s)
VGS, Gate-to-Source Voltage (V)
9
100E-6
4
5
ID, Drain Current (A)
©2006 InPower Semiconductor Co., Ltd.
6
7
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 2.0A
0.4
0.2
-75
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature (oC)
FTP02N60/FTA02N60 REV. A . April. 2006
Page 5 of 9
Figure 12. Typical Threshold Voltage vs
Junction Temperature
1.15
1.2
VGS(TH), Threshold Voltage
(Normalized)
BVDSS, Drain-to-Source
Breakdown Voltage (Normalized)
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
1.10
1.05
1.00
0.95
VGS = 0V
ID = 250 µA
0.90
-75
-50
-25
0.0
25
50
75
100
125
1.1
1.0
0.9
0.8
VGS = VDS
ID = 250 µA
0.7
-75
150
-50
Figure 13. Maximum Forward Bias Safe
Operating Area
Figure 14.
25
50
75
100
125
150
Typical Capacitance vs
Drain-to-Source Voltage
1000
10.0
Single Pulse
1.
0m
10
1.0
OPERATION IN THIS AREA MAY
BE LIMITED BY R
DS(ON)
m
C, Capacitance (pF)
10µs
10
0µ
s
TJ = MAX RATED
TC = 25 oC
s
s
Ciss
100
Coss
10
DC
0.1
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd
Coss ≅ Cds + Cgd
Crss = Cgd
Crss
1
10
1
1000
100
0.1
1
Figure 15.
10
100
1000
VDS, Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Typical Gate Charge
vs Gate-to-Source Voltage
Figure 16. Typical Body Diode Transfer
Characteristics
12
40
ISD, Reverse Drain Current (A)
VGS, Gate-to-Source Voltage (V)
0.0
TJ, Junction Temperature ( C)
TJ, Junction Temperature ( C)
ID, Drain Current (A)
-25
o
o
10
VDS = 163V
VDS = 325V
VDS = 488V
8
6
4
2
ID = 2.0A
0
35
30
25
20
15
+150 oC
o
+25 C
10
-55 oC
5
VGS = 0V
0
0
2
4
6
8
10
12
QG , Total Gate Charge (nC)
©2006 InPower Semiconductor Co., Ltd.
14
16
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VSD, Source-to-Drain Voltage (V)
FTP02N60/FTA02N60 REV. A . April. 2006
Page 6 of 9
Test Circuits and Waveforms
VDS
ID
ID
VDS
VGS
Miller
Region
VGS
VDD
D.U.T.
VGS(TH)
1 mA
Qgs
Qgd
Qg
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
VDS
RL
90%
VDS
VGS
RG
VDD
D.U.T.
10%
VGS
td(ON)
Figure 19. Resistive Switching Test Circuit
©2006 InPower Semiconductor Co., Ltd.
trise
td(OFF) tfall
Figure 20. Resistive Switching Waveforms
FTP02N60/FTA02N60 REV. A . April. 2006
Page 7 of 9
Test Circuits and Waveforms
di/dt adj.
Current
Pump
ID
Double Pulse
di/dt = 100A/µA
VDD
D.U.T.
Qrr
L
trr
ID
Figure 22. Diode Reverse Recovery Waveform
Figure 21. Diode Reverse Recovery Test Circuit
BVDSS
L
Series Switch
(MOSFET)
IAS
BVDSS
VDD
D.U.T.
Commutating
Diode
VGS
50Ω
VDD
0
tAV
IAS
VGS
tp
I 2L
E AS = AS
2
Figure 23. Unclamped Inductive Switching Test Circuit
©2006 InPower Semiconductor Co., Ltd.
Figure 24. Unclamped Inductive Switching Waveforms
FTP02N60/FTA02N60 REV. A . April. 2006
Page 8 of 9
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function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant
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agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed.
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InPower Semiconductor Co., Ltd’s products are not authorized for use as critical components in life support devices or
systems without the expressed written approval of InPower Semiconductor Co., Ltd.
As used herein:
1. Life support devices or systems are devices or systems which:
a. are intended for surgical implant into the human body,
b. support or sustain life,
c. whose failure to perform when properly used in accordance with instructions
for used provided in the labeling, can be reasonably expected to result in significant
injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
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©2006 InPower Semiconductor Co., Ltd.
FTP02N60/FTA02N60 REV. A . April. 2006
Page 9 of 9