Silicore IGBT GATE DRIVER D8316 DESCRIPTION Outline Drawing D8316 is a dedicated IC integrating IGBT gate drive circuit on a sing le chip . A high cu rrent directly drives IGBT . FEATURE z Can directly control fro m a micro controller. z Can directly drive the IGBT gate using a high current. Source current:-200mA (max.), sink cu rrent 1A (max.) z Incorporates a diode to protect th e IGBT gate at po wer on. BLOCK DIAGRAM Vcc 2 7 DI Comp GATEIN 1 30K + 6 SO Driver 5 SI - 3 NC GND 4 PIN CONNECTION D8316 1 2 4 5 3 GATHIN Vcc NC GND SI 6 SO 7 DI SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC 1/5 Silicore D8316 PIN FUNCTIONS PIN NO . PIN NAME FUNCTI ON 1 GATEIN Gate signal inpu t pin 5 SI 2 Vcc System power supply 6 SO 3 NC Not connected 7 DI 4 GND GND PIN PIN NO. NAME FUNCTI ON IGBT gate drive pin1 (sink side) IGBT gate drive pin2 (source side) IGBT gate protector diode pin ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Characteristic Symbol Value Unit Collector Supply Voltage Vcc 25 V Input Vo ltage VIN GND -0.3~Vcc+0.3 V Power Diss ipation* PD 925 mW Operating Te mperature Ta mb -20~85 °C Storage Temp erature Tstg -55~150 °C *When Ta > 25°C, P D decreases 7.4 mW per degree. SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC 2/5 Silicore D8316 ELECTRICAL CHARACTERISTICS (Unless otherwise specified: Ta=25°C, Vcc=20V) Characteristic Test condition Symbol Min Vcc 7 Typ Max Unit 24 V Supply Vo ltage Block Operating Supply Vo ltage Range Current co nsu mption 1 GATHI N=“ H” Icc1 0.7 1.25 1.9 mA Current co nsu mption 2 GATHI N=“ L” Icc2 4.2 6.25 8.8 mA VIN G AT H I N 0 Vcc-2.2 V 3 V GATEIN Pi n Input Dynamic Range Threshold Voltage 1 GATE Signal L→H VTH G AT H 1 Threshold Voltage 1 GATE Signal H→L VTH G AT H 2 1.5 2.27 Input Current V I N =5V ITH G AT H 125 167 When lo ad C=5600pF， R=10kΩ connected fTH G AT H Input (Reference) Frequency 2.63 V 249 µA 50 kHz SI Pin “L” level output Vo ltage 1 V G AT H I N =0V， I O L =30mA VOL SI1 0.7 V “L” level output Vo ltage 2 V G AT H I N =0V， I O L =1A VOL SI2 2 V “L” level output Vo ltage 3 Vcc=7V ， V G AT H I N =0V ， I O L = 3 0 mA VOL SI3 1 V VOL SI4 1 V VOL SI5 2 V IOFF SI 1 µA “L” level output Voltage 4 2 V ≤ Vcc < 7V， (Output Voltage at Low V G AT H I N =0V， No Load Supply Voltage) “L” level output Voltage 5 2 V ≤ Vcc < 7V， (Output Voltage at Low V G AT H I N =0V， I O L =30mA Supply Voltage) Off Leakage Current V G AT H I N =6V， V I N =20V -1 SO Pin “H” level output Vo ltage 1 V G AT H I N =6V，I O H =-30mA V O H SO1 Vcc-2 V “H” level output Vo ltage 2 V G AT H I N =6V，I O H =-2 0 0 mA V O H SO2 Vcc-5 V Off Leakage Current V G AT H I N =0V， V I N =0V IOFF SO -1 Input Clamp Voltage 1 I I N = 5 00 mA VF DI1 Input Clamp Voltage 2 Vcc=0V， I I N =3 0 0 mA VF DI2 1 µA Vcc+1.5 V Vcc+1 V DI Pin SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC 3/5 Silicore D8316 AC CHARACTERISTICS （ Unless otherwise specified， Vcc=20V， Tamb =2 5℃ ） Characteristic Test condition See test circuit diagram See test circuit diagram See test circuit Propagation Delay Time 1 Propagation Delay Time 2 Output Fall Ti me Symbol Min Typ Max Unit tpLL 2 µs tpHH 2 µs tf 0.5 µs AC CHARACTERISTICS TEST CONDITIONS 1． Propagation Delay Time 1（ t p L L ） Ti me fro m input of “L” level to GATEIN pin until output reaches 1V。 2 ． Propagation Delay Time 2（ t p H H ） Ti me fro m input of “H” level to GATEIN p in until output starts to rise。 3 ． Output Fall Time Output fall ti me fro m 90% to 10%. DIAGRAM OF AC CHARACTERISTICS TEST CIRCUIT D8316 GATHIN Vcc 1 2 NC GND SI SO DI 3 4 5 6 7 5600pF Measure point 10k 10 20V 150 GATE signal 0~6V/50kHz SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC 4/5 Silicore D8316 APPLICATION CIRCUIT Vcc 7 DI IGBT Gate Comp 1 GATEIN + 30K Signal 2 Driver 6 5 - SO 150 SI 10 3 NC 4 GND SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC 5/5