JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2 TRANSISTOR (NPN) FEATURES 1. BASE · · · High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0 100 V Emitter-base breakdown voltage V(BR)EBO IE=3mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 10 µA Collector-emitter cut-off current ICEO VCE=50V,IE=0 10 µA Emitter cut-off current IEBO VEB=5V,IC=0 2 mA hFE(1) VCE=4V,IC=4A 1000 hFE(2) VCE=4V,IC=8A 100 12000 DC current gain VCE(sat)1 IC=4A,IB=16mA 2 V VCE(sat)2 IC=8A,IB=80mA 4 V VBE(sat) IC=8A,IB=80mA 4.5 V Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VBE VCE=4V,IC=4A 2.8 V Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz 200 pF Typical Characteristics MJD122