MT MT2300 Mos-tech Semiconductor Corp N-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● PRODUCT SUMMARY Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package VDSS ID 20V RDS(ON) (mΩ) Typ 33 @ VGS=4.5V 3.6A 52 @ VGS=2.5V D NOTE：The MT2300 is available in a lead-free package S G ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted） Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 3.6 A IDM 12 A Drain-source Diode Forward Currentª IS 1.25 A Maximum Power Dissipationª PD 1.25 W Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 ℃ Drain Current-Continuousª@Tj=125℃ - Pulse d b THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA http//www.mtsemi.com 1 100 ℃/W MT2300 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250µA 20 Zero Gate Voltage Drain Current IDSS VDS=16V,VGS=0V 1 µA Gate-Body Leakage IGSS VGS=±8V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250µA 0.8 1.5 V VGS=4.5V,ID=2.8A 33 45 Drain-Source On-State Resistance RDS(ON) VGS=2.5V,ID=2.0A 52 60 VGS=7V,ID=5A 5 S 608 pF 115 pF 86 pF 10 ns 14 ns 39 ns 26 ns 9.2 nC 1.6 nC 2.6 nC OFF CHARACTERISTICS V ON CHARACTERITICS Forward Transconductance 0.5 mΩ FS DAYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS=10V,VGS=0V f=1.0MHZ SWITCHING CHARACTERISISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tD(ON) VDD=10V ID=3.6A, VGEN=4.5V RL=10ohm RGEN=10ohm tr tD(OFF) tf Total Gate Charge Q Gate-Source Charge Q s Gate-Drain Charge Q d VDS=10V,ID=1A VGS=4.5V http//www.mtsemi.com 2 MT2300 ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit 0.84 1.3 V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS=0V,IS=1.25A Notes ID,Drain Current(A) ID, Drain Current (A) a. Surface Mounted on FR4 Board, t≦10sec b. Pulse Test: Pulse Width≦300Us, Duty≦2% c. Guaranteed by design, not subject to production testing. VGS, Gate-to-source Voltage (V) Figure 2.Transfer Characteristics VGS=4V C,Capacitance(pF) RDS(ON), On-Resistance(mΩ) VDS, Drain-to-Source Voltage (V) Figure 1.Output Characteristics ID=3A VGS, Drain-to Source Voltage Figure3.Capacitance Figure4. On-Resistance Variation with Temperature http//www.mtsemi.com 3 1.2 VDS=VGS 1.1 ID=250uA 1.0 0.9 0.8 0.7 Drains-Source Breakdown 1.3 BVDSS, Normalized Gate-Source Threshold Voltage Vth, Normalized MT2300 1.15 1.10 ID=250uA 1.05 1.00 0.95 0.90 0.85 0.6 --50 -25 0 25 50 --50 -25 75 100 125 Tj,. Junction Temperature(℃) 18 10 Is,Source-drain current(A) FS,Transconductance(S) 20 15 12 9 6 3 VGS=7V 0 10 15 20 25 50 75 100 125 Figure6.Breakdown Voltage Variation With Temperature 21 5 25 Tj, .Junction Temperature (℃) Figure5.Gate Threshold Variation With Temperature 0 0 1 Tj=25℃ 0 0.6 30 0.8 1.0 1.2 1.4 1.6 VSD, Body Diode Forward Voltage Figure8.Body Diode Forward Voltage Variation with Source Current IDS, Drain-Source Current (A) Figure7.Transconductance Variation With Drain Current 50 10 VDS=10V 4 ID,Drain Current(A) VGS,Gate to Source Voltage 5 ID=3.6A 3 2 1 1 0.1 0.03 0 0 2 4 6 8 10 12 0.1 14 Q , Total Gate Charge(nC) 1 10 20 50 VDS, Drain-Source Voltage(V) Figure9. Gate Charge Figure10.Maximum Safe Operating Area http//www.mtsemi.com 4