NANKER NK2301A P-Channel Enhancement Mode MOSFET Feature -16V/-3A, RDS(ON) = 160mΩ(MAX) @VGS = -4.5V. RDS(ON) = 240mΩ(MAX) @VGS = -2.5V. Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SC-59 for Surface Mount Package SC-59 Applications ● Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA =25℃ Unless Otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V DS -16 V Gate-Source Voltage V GS ±8 V ID -3 A Drain Current-Continuous Electrical Characteristics Parameter T A=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=-250μA -16 - - V Zero-Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V - - -5 μA Gate Body Leakage Current, Forward IGSSF VGS=8V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-8V, VDS=0V - - -100 nA VGS(th) VGS= VDS, ID=-250µA -0.45 - -1.5 V VGS =-4.5V, ID =-3.0A - 120 160 mΩ VGS =-2.5V, ID =-2.0A - 190 240 mΩ -1.8 V Off Characteristics Drain to Source Breakdown Voltage On Characteristics Gate Threshold Voltage Static Drain-source RDS(ON) On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=-1.25A Nanker Group Headquarters: Tel: 0756-8128088 E-mail: [email protected] October 24, 2006 Shenzhen Sales Office: Fax: 0756-8889513 Tel: 0755-86022782, 86022783, 86022910 Fax: 0755-86022774 Website: www.nanker.com Page 1 of 3 www.nanker.com NANKER NK2301A Typical Characteristics 14 12 VGS=3，3.5，4V，4.5V 10 -ID,Drain Current (A) -ID,Drain Current(A) 12 10 8 VGS=2.5V 6 4 8 6 Tj＝150℃ 4 Tj＝25 ℃ 2 2 VGS=2.0V 0 0 1 2 3 0 4 5 0 1 -VDS,Drain-Source Voltage(V) 3 4 -VGS,Gate-to-Source Voltage (V) Figure 1．Output Characteristics Figure 2．Transfer Characteristics 1.3 23.2 I D=250uA ID=250uA - Vth,Noma lized Gate-S ource Thresho ld Voltage(V) - BVDSS, Normalized Dr ain-Source B reakdown Voltage( V) 2 23 22.8 22.6 22.4 22.2 1.2 1.1 1 0.9 0.8 22 0 50 100 150 50 100 150 Tj,Junction Temperature(℃) Tj,Junction Temperature(℃) Figure 3．Breakdown Voltage Variation with Temperature October 24, 2006 0 Figure 4．Gate Threshold Variation with Temperature Page 2 of 3 www.nanker.com NANKER NK2301A 0.35 0.125 -3.0V/-2.0A 0.3 0.12 RDS(o n)-On Resist ance(Ω) Rds(on),Normalized On-Resistance(Ω) Typical Characteristics 0.115 0.11 0.105 0.25 0.2 0.15 0.1 VGS=-4.5V 0.05 0.1 0 0 50 100 150 Tj,Junction Temperature(℃) 0 Figure 5．On-Resistance Variation with Temperature 5 10 15 -ID-Drain Current(A) 20 Figure 6．On-Resistance vs. Drain Current 0.3 100 -IS,Sour ce-Drain Curr ent(A) ID=-3A 0.25 RDS(on),On-R esistance (Ω) VGS=-2.5V 0.2 ID=-2A 0.15 0.1 0.05 0 10 Tj＝150℃ Tj＝25℃ 1 0.1 1 2 3 4 5 -VGS,Gate-to-Source Voltage (V) 2 3 4 5 -VSD,Body Diode Forward Voltage(V) Figure 7．On-Resistance vs. Gate-to-Source Voltage October 24, 2006 1 Page 3 of 3 Figure 8．Source-Drain Diode Forward Voltage www.nanker.com