NANKER NK8810 Dual N-Channel Enhancement Mode MOSFET Feature 16V/6A, RDS(ON) = 20mΩ(MAX) @VGS = 4.5V. RDS(ON) = 24mΩ(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. TSSOP-8 for Surface Mount Package. Build-in gate protection diode. TSSOP-8 Applications ● LI-ION Protection Circuit Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Symbol Limit Units Drain-Source Voltage Parameter VDS 16 V Gate-Source Voltage VGS ±8 V ID 6 A Drain Current-Continuous Electrical Characteristics Parameter TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 16 - - V Zero-Gate Voltage Drain Current IDSS VDS=12V, VGS=0V - - 1 µA VGS=5V, VDS=0V - - 100 nA VGS=7V, VDS=0V - - 10 µA VGS=-5V, VDS=0V - - -100 nA VGS=-7V, VDS=0V - - -10 µA VGS= VDS, ID=250µA 0.4 - 1.3 V VGS =4.5V, ID =6.0A - 20 mΩ VGS =2.5V, ID =5.2A - 24 mΩ 1.2 V Off Characteristics Gate Body Leakage Current, Forward IGSSF Gate Body Leakage Current, Reverse IGSSR On Characteristics Gate Threshold Voltage VGS(th) Static Drain-source RDS(ON) On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=1.5A Nanker Group Headquarters: Tel: 0756-8128088 E-mail: [email protected] September 19, 2006 Shenzhen Sales Office: Fax: 0756-8889513 Tel: 0755-86022782, 86022783, 86022910 Fax: 0755-86022774 Website: www.nanker.com Page 1 of 3 www.nanker.com NANKER NK8810 Typical Characteristics 20 20 18 16 16 ID,Drain Current(Amps) ID,Drain Current(Amps) VDS=2.0V 18 VGS=2，2.5，3.5，4.5V 14 12 10 8 6 VGS=1.5V 4 14 12 10 Tj＝125℃ 8 6 Tj＝25℃ 4 2 2 0 0 0 2 4 6 0 8 0.5 Figure 1．Output Characteristics 1.5 2 2.5 3 Figure 2．Transfer Characteristics 21.5 0.9 ID=250uA 0.8 VGS,Gate-to-Source Voltage(Volts) BVDSS,Normalized Drain-Source Breakdown Voltage(V) 1 VGS,Gate-to-Source Voltage(Volts) VDS,Drain-to-Source Voltage(Volts) 21 20.5 20 19.5 ID=250uA 0.7 0.6 0.5 0.4 0.3 0.2 0.1 19 0 0 50 100 150 Tj.Junction Temperature(℃) 50 100 150 Tj.Junction Temperature(℃) Figure 3．Breakdown Voltage Variation with Temperature September 19, 2006 0 Figure 4．Gate Threshold Variation with Temperature Page 2 of 3 www.nanker.com NANKER NK8810 Typical Characteristics 0.028 0.026 0.03 2.5V/5.2A RDS(on)-On Resistance(Ω) RDS(on),Normalized On-Resistance(Ω) 0.035 0.025 0.02 4.5V/6A 0.015 0.01 VGS=2.0V 0.024 0.022 VGS=2.5V 0.02 VGS=3.0V VGS=3.5V 0.018 0.005 VGS=4.0-10V 0 0.016 0 50 100 0 150 5 10 15 20 ID-Drain Current(A) Tj.Junction Temperature(℃) Figure 5．On-Resistance Variation with Temperature Figure 6．On-Resistance vs. Drain Current 100 0.06 0.055 ID=6A 0.045 IS-Source Current(A) RDS(on)-On Resistance(Ω) 0.05 0.04 0.035 0.03 0.025 ID=5.2A 10 Tj＝150℃ Tj＝25℃ 1 0.02 0.015 0.01 0.1 0 2 4 6 8 10 Figure 7．On-Resistance vs. Gate-to-Source Voltage September 19, 2006 0 0.5 1 1.5 VSD-Source-to-Drain Voltage(V) VGS,Gate-to-Source Voltage(Volts) Page 3 of 3 Figure 8．Source-Drain Diode Forward Voltage www.nanker.com