PH435 High Linearity InGaP HBT Amplifier Features Functional Diagram Applications 1500MHz - 3000MHz Mobile Infrastructure 14.8 dB Gain at 2.3GHz PCS, WCDMA, WiBro +25 dBm P1dB W-LAN / ISM +42 dBm Output IP3 RFID / Fixed Wireless 4 3 2 1 Single Voltage Supply Lead-free / Green / RoHScompliant SOT-89 Package Function Pin No. RF IN 1 RF OUT / Bias 3 Ground 2,4 Description The PH435 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOT-89 package. The device features excellent Input and output return loss, highly linear performance. The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as driver amplifier for wireless infrastructure applications. The PH435 operates from a single +5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested Specifications Symbol Parameters Units S21 Gain dB S11 S22 P1dB OIP3 NF Input Return Loss Output Return Loss dB dB Output Power @1dB compression dBm Output Third Order intercept dBm Noise Figure dB Freq. Min. Typ. 1900 MHz 16.8 2300 MHz 14.8 1900 MHz -17 2300 MHz -14 1900 MHz -17 2300 MHz -14 1900 MHz 25.5 2300 MHz 25.5 1900 MHz 42 2300 MHz 42.5 1900 MHz 3.1 2300 MHz 3.2 V/I Device voltage / current V/mA 5/152 Rth Thermal Resistance °C/W 53 Tj Junction Temperature °C 125 Max. Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +7dBm/tone separated by 1MHz. http://www.prewell.com 1 November 2006 PH435 High Linearity InGaP HBT Amplifier 1900 MHz Application Circuit +5 V Frequency 1900 MHz S21 : Gain 17.0 dB 1uF S11 : Input Return Loss -19 dB S22 : Output Return Loss -19 dB Output P1dB +25.5 dBm Output IP3 @7dBm +42 dBm IS-95A Ch. Power +19.0 dBm 20pF 22nH RF IN RF OUT 50Ω/6mm @ -45dBc ACPR 1.5pF 20pF Gain vs. Frequency 3.1 dB 5V Current 152 mA Input Return Loss 0 -6 18 -10 -12 S22(dB) -5 16 -15 o 12 1800 1850 1900 1950 o +25 C o -40 C o +85 C -20 -25 1800 2000 1850 Frequency(MHz) 32 -18 +25 C o -40 C o +85 C o +25 C o -40 C o +85 C 14 Output Return Loss 0 20 S11(dB) Gain(dB) 22 Noise Figure Supply Voltage 1.2pF 2.0pF 1900 1950 -24 -30 1800 2000 1850 Frequency(MHz) o +7dBm/tone, +25 C 50 1950 2000 OIP3 vs. Temperature Output IP3 vs. Frequency P1dB vs. Frequency 1900 Frequency(MHz) Freq=1900MHz, +7dBm/tone 46 30 44 26 24 40 o 1850 1900 1950 +25 C o -40 C o +85 C 35 30 1800 2000 1850 1900 Frequency(MHz) 6 42 40 o +25 C o -40 C o +85 C 22 20 1800 OIP3(dBm) 28 OIP3(dBm) P1dB(dBm) 45 1950 2000 2050 38 2100 36 -40 -20 0 20 40 60 80 o Frequency(MHz) Temperature( C) ACPR IS-95A vs. Channel Power Noise Figure vs. Frequency -40 IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset -45 4 -50 ACPR(dBc) NF(dB) freq=1.9GHz 5 3 2 1 0 1800 -55 -60 -65 o +25 C -70 1850 1900 Frequency(MHz) 1950 2000 10 12 14 16 18 20 22 Output Channel Power(dBm) http://www.prewell.com 2 November 2006 PH435 High Linearity InGaP HBT Amplifier 2300 MHz Application Circuit +5 V Frequency 2300 MHz S21 : Gain 15.0 dB S11 : Input Return Loss -15 dB 1uF 20pF S22 : Output Return Loss -15 dB Output P1dB +25.5 dBm Output IP3 @7dBm +42.5 dBm Noise Figure 3.1 dB 22nH RF IN 2.0pF 1.8pF 20pF 1.2pF 1.5pF Gain vs. Frequency Supply Voltage 5V Current 152 mA Input Return Loss 0 16 -10 -10 S22(dB) -5 S11(dB) -5 14 -15 o +25 C o -40 C o +85 C 12 2250 2300 2350 6 -15 o -25 2200 2400 o +25 C o -40 C o +85 C -20 2250 Frequency(MHz) 2300 2350 +25 C o -40 C o +85 C -20 -25 2200 2400 2250 Frequency(MHz) Noise Figure vs. Frequency 5 30 4 28 3 2 24 o +25 C o -40 C o +85 C o 2250 2300 2350 20 2200 2400 2250 2300 2350 2400 Frequency(MHz) Frequency(MHz) OIP3 vs. Temperature Output IP3 vs. Frequency Freq=2300MHz, +7dBm/tone o +7dBm/tone, +25 C 50 2400 26 +25 C 0 2200 2350 P1dB vs. Frequency 22 1 2300 Frequency(MHz) 32 P1dB(dBm) NF(dB) 46 44 45 OIP3(dBm) 10 2200 Output Return Loss 0 18 OIP3(dBm) Gain(dB) 20 RF OUT 50Ω/6mm 40 42 40 o +25 C o -40 C o +85 C 35 30 2200 2250 2300 2350 2400 2450 38 36 -40 2500 -20 0 20 40 60 80 o Frequency(MHz) Temperature( C) http://www.prewell.com 3 November 2006 PH435 High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +6 V Supply Current 220 mA RF Power Input 12 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Operation of this device above any of these parameters may cause permanent damage. Lead-free /RoHS Compliant / Green SOT-89 Package Outline ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Evaluation Board Layout (4x4) Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. http://www.prewell.com 4 November 2006