PH530-23 High Linearity InGaP HBT Amplifier Features Functional Diagram Applications 4 800MHz - 3000MHz Mobile Infrastructure 19.0 dB Gain at 900MHz Cellular, GSM +30 dBm P1dB PCS, WCDMA, WiBro, WiMAX +45 dBm Output IP3 W-LAN / ISM Single Voltage Supply RFID / Fixed Wireless 1 Lead-free / Green / RoHScompliant SOT-223 Package 3 2 Function Pin No. RF IN 1 RF OUT / Bias 3 Ground 2,4 Description The PH530-23 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOT-223 package. The device features excellent Input and output return loss, highly linear performance. The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as driver amplifier for wireless infrastructure applications. The PH530-23 operates from a single +5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested Specifications Symbol Parameters Units Freq. Min. Typ. 19.0 13.8 13.1 11.5 S21 Gain dB 900 MHz 1900 MHz 2140 MHz 2550 MHz S11 Input Return Loss dB 900 MHz 1900 MHz 2140 MHz 2550 MHz -17 -17 -19 -19 dB 900 MHz 1900 MHz 2140 MHz 2550 MHz -15 -18 -17 -17 dBm 900 MHz 1900 MHz 2140 MHz 2550 MHz 30.0 30.0 29.5 28.3 45 44 45 42.5 4.1 3.9 4.0 3.9 S22 Output Return Loss P1dB Output Power @1dB compression OIP3 Output Third Order intercept dBm 900 MHz 1900 MHz 2140 MHz 2550 MHz NF Noise Figure dB 900 MHz 1900 MHz 2140 MHz 2550 MHz V/I Device voltage / current V/mA 5/260 Rth Thermal Resistance °C/W 36 Tj Junction Temperature °C 133 Max. Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +9dBm/tone separated by 1MHz. http://www.prewell.com Preliminary Data Sheet 1 January 2007 PH530-23 High Linearity InGaP HBT Amplifier 900 MHz Application Circuit +5 V Frequency 900 MHz S21 : Gain 19.5 dB 1uF S11 : Input Return Loss -18 dB S22 : Output Return Loss -16 dB Output P1dB +30.2 dBm Output IP3 @8dBm +45.5 dBm IS-95A Ch. Power +21.3 dBm 100pF 100nH RF IN 100pF 3.3nH 1.8nH 1.0pF 7.0pF 24 100pF Gain vs. Frequency RF OUT @ -45dBc ACPR 6.0pF Noise Figure 4.0 dB Supply Voltage 5V Current 262 mA Input Return Loss 0 Output Return Loss 0 o S11(dB) Gain(dB) 22 20 -5 -6 -10 -12 S22(dB) +25 C o -40 C o +85 C -15 -18 o 18 16 800 -20 850 900 950 -25 800 1000 900 950 -30 800 1000 46 28 OIP3(dBm) OIP3(dBm) P1dB(dBm) 30 40 900 950 +25 C o -40 C o +85 C 35 30 800 1000 850 Frequency(MHz) 6 44 42 o o +25 C o -40 C o +85 C 26 1000 Freq=900MHz, +8dBm/tone 48 45 32 950 OIP3 vs. Temperature o +8dBm/tone, +25 C 50 900 Frequency(MHz) Output IP3 vs. Frequency P1dB vs. Frequency 850 850 Frequency(MHz) 34 24 800 +25 C o -40 C o +85 C -24 850 Frequency(MHz) 36 o +25 C o -40 C o +85 C 900 950 40 1000 38 -40 -20 0 20 40 60 80 o Frequency(MHz) Temperature( C) ACPR IS-95A vs. Channel Power Noise Figure vs. Frequency -40 IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset freq=900MHz -45 ACPR(dBc) NF(dB) 5 4 3 2 -50 -55 -60 -65 o +25 C 1 800 -70 850 900 Frequency(MHz) 950 1000 12 14 16 18 20 22 24 Output Channel Power(dBm) http://www.prewell.com Preliminary Data Sheet 2 January 2007 PH530-23 High Linearity InGaP HBT Amplifier 1900 MHz Application Circuit +5 V Frequency 1900 MHz S21 : Gain 14.0 dB 1uF S11 : Input Return Loss -18 dB S22 : Output Return Loss -20 dB Output P1dB +30.2 dBm Output IP3 @9dBm +44.5 dBm IS-95A Ch. Power +22.5 dBm 20pF 22nH RF IN 20pF 1.8pF 1.5pF 18 20pF 50Ω/4mm RF OUT @ -45dBc ACPR 2.2pF Gain vs. Frequency Noise Figure 3.8 dB Supply Voltage 5V Current 262 mA Input Return Loss 0 Output Return Loss 0 -5 14 -10 12 +25 C o -40 C o +85 C -6 S22(dB) 16 S11(dB) Gain(dB) o -15 -12 o +25 C o -40 C o +85 C -18 o +25 C o -40 C o +85 C 10 8 1800 1850 1900 1950 -20 -24 -25 1800 2000 1850 Frequency(MHz) 36 1900 1950 -30 1800 2000 o +9dBm/tone, +25 C 50 Freq=1900MHz, +9dBm/tone 50 30 28 45 OIP3(dBm) OIP3(dBm) P1dB(dBm) 2000 48 32 40 o 1850 1900 1950 35 1800 2000 46 44 o +25 C o -40 C o +85 C +25 C o -40 C o +85 C 26 1850 Frequency(MHz) 6 1950 OIP3 vs. Temperature Output IP3 vs. Frequency P1dB vs. Frequency 1900 Frequency(MHz) 34 24 1800 1850 Frequency(MHz) 1900 1950 42 2000 40 -40 -20 0 20 40 60 80 o Frequency(MHz) Temperature( C) ACPR IS-95A vs. Channel Power Noise Figure vs. Frequency IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset -40 freq=1.9GHz -45 ACPR(dBc) NF(dB) 5 4 3 2 -50 -55 -60 -65 o +25 C 1 1800 1850 1900 Frequency(MHz) 1950 2000 -70 10 12 14 16 18 20 22 24 Output Channel Power(dBm) http://www.prewell.com Preliminary Data Sheet 3 January 2007 PH530-23 High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit +5 V 1uF 1.0pF 1.0pF Gain vs. Frequency 13.3 dB -20 dB -18 dB Output P1dB +29.8 dBm Output IP3 @9dBm +45.5 dBm WCDMA Ch. Power +19.7 dBm RF OUT @ -45dBc ACLR 1.8pF Noise Figure 3.9 dB Supply Voltage 5V Current 262 mA Input Return Loss 0 -6 14 -10 -12 S22(dB) -5 12 -15 8 2050 2100 2150 2200 +25 C o -40 C o +85 C -20 -25 2050 2250 2100 Frequency(MHz) 36 2150 2200 o -30 2050 2250 2200 2250 OIP3 vs. Temperature o +9dBm/tone, +25 C 50 2150 Frequency(MHz) Output IP3 vs. Frequency P1dB vs. Frequency Freq=2140MHz, +9dBm/tone 50 48 30 28 45 OIP3(dBm) OIP3(dBm) P1dB(dBm) 2100 Frequency(MHz) 32 40 o 2100 2150 2200 35 2050 2250 46 44 o +25 C o -40 C o +85 C +25 C o -40 C o +85 C 26 2100 Frequency(MHz) 6 +25 C o -40 C o +85 C -24 34 24 2050 -18 o o +25 C o -40 C o +85 C 10 Output Return Loss 0 16 S11(dB) Gain(dB) 18 20pF 50Ω/4mm S21 : Gain S11 : Input Return Loss 22nH 20pF 2140 MHz S22 : Output Return Loss 20pF RF IN Frequency 2150 2200 42 2250 40 -40 -20 0 20 40 60 80 o Frequency(MHz) Temperature( C) W-CDMA ACLR vs. Channel Power Noise Figure vs. Frequency 3GPP W-CDMA, Test Model1 + 64DPCH, 5MHz offset -35 freq=2.14GHz -40 ACLR(dBc) NF(dB) 5 4 3 -45 -50 -55 2 o +25 C 1 2050 2100 2150 Frequency(MHz) 2200 2250 -60 10 12 14 16 18 20 22 Output Channel Power(dBm) http://www.prewell.com Preliminary Data Sheet 4 January 2007 PH530-23 High Linearity InGaP HBT Amplifier 2350 MHz Application Circuit +5 V Frequency 2350 MHz S21 : Gain 11.4 dB S11 : Input Return Loss -17 dB 1uF 20pF S22 : Output Return Loss -17 dB Output P1dB +29.4 dBm Output IP3 @9dBm +43.5 dBm Noise Figure 3.9 dB 22nH RF IN 0.75pF 50Ω/4mm 0.75pF 1.5pF Gain vs. Frequency 20pF RF OUT Supply Voltage 5V Current 262 mA Input Return Loss 0 -6 12 -10 -12 S22(dB) -5 10 -15 6 2250 2300 2350 2400 +25 C o -40 C o +85 C -20 -25 2250 2450 2300 Frequency(MHz) 2350 2400 o +25 C o -40 C o +85 C -24 -30 2250 2450 2300 Frequency(MHz) P1dB vs. Frequency 34 6 32 2350 2400 2450 Frequency(MHz) Noise Figure vs. Frequency 5 30 NF(dB) P1dB(dBm) -18 o o +25 C o -40 C o +85 C 8 Output Return Loss 0 14 S11(dB) Gain(dB) 16 20pF 28 26 3 o +25 C o -40 C o +85 C 24 22 2200 4 2250 2300 2350 2400 2450 2 o +25 C 1 2250 2500 2300 Frequency(MHz) 2400 2450 OIP3 vs. Temperature Output IP3 vs. Frequency o +9dBm/tone, +25 C 50 2350 Frequency(MHz) Freq=2350MHz, +9dBm/tone 46 OIP3(dBm) OIP3(dBm) 44 45 40 35 2250 42 o +25 C o -40 C o +85 C 2300 2350 2400 40 38 -40 2450 -20 0 20 40 60 80 o Frequency(MHz) Temperature( C) http://www.prewell.com Preliminary Data Sheet 5 January 2007 PH530-23 High Linearity InGaP HBT Amplifier 2550 MHz Application Circuit +5 V Frequency 2550 MHz S21 : Gain 11.6 dB S11 : Input Return Loss -25 dB 1uF 20pF S22 : Output Return Loss -18 dB Output P1dB +28.3 dBm Output IP3 @9dBm +43.0 dBm Noise Figure 3.8 dB 22nH 16 20pF 0.5pF 1.0nH 0.5pF 1.2pF Gain vs. Frequency RF OUT 5V Current 262 mA S11(dB) 10 -6 -20 2500 2550 2600 +25 C o -40 C o +85 C -30 -40 2450 2650 2500 Frequency(MHz) 34 2550 P1dB vs. Frequency 2600 6 o +25 C o -40 C o +85 C -24 -30 2450 2650 2500 2550 2600 2650 Frequency(MHz) Noise Figure vs. Frequency 5 30 NF(dB) P1dB(dBm) -18 Frequency(MHz) 32 28 26 22 2450 4 3 o +25 C o -40 C o +85 C 24 2500 2550 2600 2 o +25 C 1 2450 2650 2500 Frequency(MHz) 2550 2600 2650 Frequency(MHz) OIP3 vs. Temperature Output IP3 vs. Frequency o +9dBm/tone, +25 C 50 Freq=2550MHz, +9dBm/tone 46 44 OIP3(dBm) 45 OIP3(dBm) -12 o o +25 C o -40 C o +85 C 8 Output Return Loss 0 -10 12 6 2450 Supply Voltage Input Return Loss 0 14 Gain(dB) 20pF S22(dB) RF IN 40 42 o +25 C o -40 C o +85 C 35 30 2450 2500 2550 2600 40 38 -40 2650 -20 0 20 40 60 80 o Frequency(MHz) Temperature( C) http://www.prewell.com Preliminary Data Sheet 6 January 2007 PH530-23 High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +6 V Supply Current 300 mA RF Power Input 15 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Operation of this device above any of these parameters may cause permanent damage. Lead-free /RoHS Compliant / Green SOT-223 Package Outline ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Evaluation Board Layout (4x4) Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. http://www.prewell.com Preliminary Data Sheet 7 January 2007