深圳市杰鸿顺电子有限公司 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN) TO-92 FEATURES z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V) 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage IC Collector Current -Continuous 6 V 0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Tstg ℃ Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol Test conditions MIN TYP MAX UNIT V(BR)CBO IC=100μA,IE=0 180 V V(BR)CEO* IC= 1mA, IB=0 160 V V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut-off current IEBO VEB= 4V, IC=0 50 nA hFE1* VCE=5V, IC=1mA 80 hFE2* VCE=5V, IC =10mA 80 hFE3 VCE=5V, IC=50mA 30 DC current gain Collector-emitter saturation voltage VCEsat* Base-emitter saturation voltage VBEsat* Transition frequency fT 250 IC=10mA, IB=1mA 0.15 IC=50mA, IB=5mA 0.2 IC=10mA, IB= 1mA 1 IC=50mA, IB= 5mA 1 VCE=10V,IC=10mA,f=100MHz 100 V V 300 MHz VCB=10V,IE=0,f=1MHz 6 pF Collector output capacitance Cob Input capacitance Cib VBE=0.5V,IC=0,f=1MHz 20 pF NF VCE=5V,Ic=0.25mA, f=10Hz to 15.7KHz,Rs=1kΩ 8 dB Noise figure *Pulse test http://jhs-ic.hqew.com 深圳市杰鸿顺电子有限公司 Typical Characteristosc http://jhs-ic.hqew.com 2N5551