C E 24 01 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● PRODUCT SUMMARY Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package VDSS ID -20V RDS(ON) (mΩ) Typ 95@ VGS=-4.5V -3.6A 115 @ VGS=-2.5V D NOTE：The CE2401 is available in a lead-free package S G ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted） Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID -3.6 A IDM -11 A Drain-source Diode Forward Currentª IS -1.25 A Maximum Power Dissipationª PD 1.25 W Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 ← Drain Current-Continuousª@Tj=125℃ - Pulse d b THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 1 100 ℃/W C E 24 01 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250µA -20 Zero Gate Voltage Drain Current IDSS VDS=-16V,VGS=0V 1 µA Gate-Body Leakage IGSS VGS=±10V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250µA -0.8 -1.5 V VGS=-4.5V,ID=-2.8A 95 110 Drain-Source On-State Resistance RDS(ON) VGS=-2.5V,ID=-2.0A 115 145 VGS=-5V,ID=-5A 5 S 586 pF 101 pF 59 pF 6.5 ns 32.1 ns 58.4 ns 48 ns 6 nC 1.35 nC 1.5 nC OFF CHARACTERISTICS V ON CHARACTERITICS Forward Transconductance -0.5 mΩ FS DAYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS=-10V,VGS=0V f=1.0MHZ SWITCHING CHARACTERISISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tD(ON) VDD=-10V ID=-2.8A, VGEN=-4.5V RL=10ohm RGEN=6ohm tr tD(OFF) tf Total Gate Charge Q Gate-Source Charge Q s Gate-Drain Charge Q d VDS=-10V,ID=-3A VGS=-4.5V 2 C E 24 01 ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit -0.81 -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS=0V,IS=-1.25A Notes a. Surface Mounted on FR4 Board, t≦10sec b. Pulse Test: Pulse Width≦300Us, Duty≦2% c. Guaranteed by design, not subject to production testing. -VGS=2.5V -ID,Drain Current(A) -ID, Drain Current (A) -VGS=10.5~3.5V -VGS=1.5V - VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-source Voltage (V) Figure 2.Transfer Characteristics C,Capacitance(pF) RDS(ON), On-Resistance(mΩ) Figure 1.Output Characteristics VGS=-4.5V ID=-4A - VGS, Drain-to Source Voltage Figure3.Capacitance Figure4. On-Resistance Variation with Temperature 3 1.2 VDS=VGS 1.1 ID=-250uA 1.0 0.9 0.8 0.7 Drains-Source Breakdown 1.3 BVDSS, Normalized Gate-Source Threshold Voltage Vth, Normalized C E 24 01 1.15 1.10 ID=-250uA 1.05 1.00 0.95 0.90 0.85 0.6 --50 -25 0 25 50 --50 -25 75 100 125 Tj,. Junction Temperature(℃) 25 50 75 100 125 Tj, .Junction Temperature (℃) Figure5.Gate Threshold Variation With Temperature Figure6.Breakdown Voltage Variation With Temperature 20 21 -Is,Source-drain current(A) FS,Transconductance(S) 0 18 15 12 9 6 3 VGS=-5V 0 0 5 10 15 20 25 10 1 Tj=25℃ 0 0.6 30 0.8 1.0 1.2 1.4 1.6 -VSD, Body Diode Forward Voltage -IDS, Drain-Source Current (A) Figure8.Body Diode Forward Voltage Variation with Source Current Figure7.Transconductance Variation With Drain Current 50 10 VDS=-10V 4 -ID,Drain Current(A) -VGS,Gate to Source Voltage 5 ID=-3.0A 3 2 1 1 0.1 0.03 0 0 2 4 6 8 10 12 0.1 14 Q , Total Gate Charge(nC) 1 10 20 50 -VDS, Drain-Source Voltage(V) Figure9. Gate Charge Figure10.Maximum Safe Operating Area 4