ETC CE2401

C E 24 01
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
●
●
●
●
PRODUCT SUMMARY
Super high dense cell design for low RDS(ON)
Rugged and reliable
Simple drive requirement
SOT-23 package
VDSS
ID
-20V
RDS(ON) (mΩ) Typ
[email protected] VGS=-4.5V
-3.6A
115 @ VGS=-2.5V
D
NOTE:The CE2401 is available
in a lead-free package
S
G
ABSOLUTE MAXIUM RATINGS(TA=25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
ID
-3.6
A
IDM
-11
A
Drain-source Diode Forward Currentª
IS
-1.25
A
Maximum Power Dissipationª
PD
1.25
W
Operating Junction and Storage
Temperature Range
TJ,TSTG
-55 to 150
←
Drain Current-Continuousª@Tj=125℃
- Pulse d
b
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
1
100
℃/W
C E 24 01
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=-250µA
-20
Zero Gate Voltage Drain Current
IDSS
VDS=-16V,VGS=0V
1
µA
Gate-Body Leakage
IGSS
VGS=±10V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250µA
-0.8
-1.5
V
VGS=-4.5V,ID=-2.8A
95
110
Drain-Source On-State Resistance
RDS(ON)
VGS=-2.5V,ID=-2.0A
115
145
VGS=-5V,ID=-5A
5
S
586
pF
101
pF
59
pF
6.5
ns
32.1
ns
58.4
ns
48
ns
6
nC
1.35
nC
1.5
nC
OFF CHARACTERISTICS
V
ON CHARACTERITICS
Forward Transconductance
-0.5
mΩ
FS
DAYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS=-10V,VGS=0V
f=1.0MHZ
SWITCHING CHARACTERISISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tD(ON)
VDD=-10V
ID=-2.8A,
VGEN=-4.5V
RL=10ohm
RGEN=6ohm
tr
tD(OFF)
tf
Total Gate Charge
Q
Gate-Source Charge
Q s
Gate-Drain Charge
Q d
VDS=-10V,ID=-3A
VGS=-4.5V
2
C E 24 01
ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
-0.81
-1.2
V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V,IS=-1.25A
Notes
a. Surface Mounted on FR4 Board, t≦10sec
b. Pulse Test: Pulse Width≦300Us, Duty≦2%
c. Guaranteed by design, not subject to production testing.
-VGS=2.5V
-ID,Drain Current(A)
-ID, Drain Current (A)
-VGS=10.5~3.5V
-VGS=1.5V
- VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-source Voltage (V)
Figure 2.Transfer Characteristics
C,Capacitance(pF)
RDS(ON), On-Resistance(mΩ)
Figure 1.Output Characteristics
VGS=-4.5V
ID=-4A
- VGS, Drain-to Source Voltage
Figure3.Capacitance
Figure4. On-Resistance Variation with
Temperature
3
1.2
VDS=VGS
1.1
ID=-250uA
1.0
0.9
0.8
0.7
Drains-Source Breakdown
1.3
BVDSS, Normalized
Gate-Source Threshold Voltage
Vth, Normalized
C E 24 01
1.15
1.10
ID=-250uA
1.05
1.00
0.95
0.90
0.85
0.6
--50
-25
0
25
50
--50 -25
75 100 125
Tj,. Junction Temperature(℃)
25
50 75 100 125
Tj, .Junction Temperature (℃)
Figure5.Gate Threshold Variation
With Temperature
Figure6.Breakdown Voltage Variation
With Temperature
20
21
-Is,Source-drain current(A)
FS,Transconductance(S)
0
18
15
12
9
6
3
VGS=-5V
0
0
5
10
15
20
25
10
1
Tj=25℃
0
0.6
30
0.8
1.0
1.2
1.4
1.6
-VSD, Body Diode Forward Voltage
-IDS, Drain-Source Current (A)
Figure8.Body Diode Forward Voltage
Variation with Source Current
Figure7.Transconductance Variation
With Drain Current
50
10
VDS=-10V
4
-ID,Drain Current(A)
-VGS,Gate to Source Voltage
5
ID=-3.0A
3
2
1
1
0.1
0.03
0
0
2
4
6
8
10
12
0.1
14
Q , Total Gate Charge(nC)
1
10 20
50
-VDS, Drain-Source Voltage(V)
Figure9. Gate Charge
Figure10.Maximum Safe Operating Area
4