Gem micro Pb GN2301 semiconductor Inc. Pb free P-Channel Enhancement-Mode MOSFET (-20V, -2.8A) PRODUCT SUMMARY VDSS ID -20V -2.8A RDS(on) (m-ohm) Max 100 @ VGS = -4.5V, ID=-2.8A 150 @ VGS = -2.5V, ID=-2.0A Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Improved Shoot-Through FOM GN2301 Pin Assignment & Symbol 3 Source 3-Lead Plastic SOT-23 Pin 1: Gate 2: Source 3: Drain 1 Gate 2 Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V -2.8 A ID IDM Drain Current (Continuous) -8 A PD Total Power Dissipation @TA=25 C 0.9 W IS Maximum Diode Forward Current -2.2 A -55 to +150 °C 140 °C/W RθJA Drain Current (Pulsed) a o Tj, Tstg Operating Junction and Storage Temperature Range b Thermal Resistance Junction to Ambient (PCB mounted) a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board DS-GN2301-REV00 Aa1 Ratings 1 Gem micro semiconductor Inc. Pb GN2301 Pb free Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit • Off Characteristics Drain-Source Breakdown Voltage VGS=0V, ID=250uA -20 - - V IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V - - ±100 nA VDS=VGS, ID=-250uA -0.4 - -0.9 V VGS=-4.5V, ID=-2.8A - 70 100 VGS=-2.5V, ID=-2A - 85 150 VDS=-5V, ID=-2.8A - 6.5 - - 8901 - - 146 - - 94 - - 14.23 - - 5.2 - BVDSS • On Characteristicsc VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gfs Forward Transconductance • Dynamic Characteristics mΩ S d Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-6V, VGS=0V, f=1MHz pF • Switching Characteristicsd Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 2.74 - td(on) Turn-on Delay Time - 19.0 - tr Turn-on Rise Time - 3.85 - td(off) Turn-off Delay Time - 39.05 - - 8.19 - - - -1.2 tf VDS=-6V, ID=-2.8A, VGS=-4.5V VDD=-6V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω Turn-off Fall Time nC nS • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1.6A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% DS-GN2301-REV00 Aa1 2 V Gem micro Pb GN2301 semiconductor Inc. Pb free Characteristics Curve On-Region Characteristic Typical On-Resistance & Drain Current 10 1.6 ID, Drain-Source Current (A). 8 Drain-Source On-Resistance-RDS(ON) VGS=10V 9 VGS=8V 7 VGS=6V 6 5 VGS=5V 4 3 2 VGS=4 1 0 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 2 4 6 8 0 10 1 2 3 4 VDS, Drain-Source Voltage(V) 5 6 7 8 9 10 11 12 Drain Current-ID (A) On Resistance Variation with Temperature Typical On-Resistance & Drain Current 2.50 1.6 1.4 VGS=10 V Normalized Drain-Source OnResistance-RDS(ON) Drain-Source On-Resistance-RDS(ON) VGS=15V VGS=10V 1.2 VGS=10V 1.0 0.8 0.6 0.4 2.00 1.50 ID=3A 1.00 0.50 0.2 0.0 0.00 0 1 2 3 4 5 6 7 8 9 10 11 12 0 Drain Current-ID (A) Drain Current Variation with Gate Voltage & Temperature 25 50 75 100 Case Temperature-Tc (oC) 125 150 Capacitance Characteristics 2000 6 VDS=10 V 1500 Tc= 25°C Capacitance (pF) Drain-Source Current-ID (A) 5 4 3 Ciss Coss 1000 Crss 2 500 1 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.1 Gate-Source Voltage-VGS (V) DS-GN2301-REV00 Aa1 1 10 VDS, Deain-Source Voltage (V) 3 100 Gem micro semiconductor Inc. DS-GN2301-REV00 Aa1 4 GN2301 Pb Pb free