JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 本资料由东莞长电代理：FUYAT CO.，LTD提供0769-85388861 SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR (PNP) FEATURES z Complementary to S9014 1. BASE 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC = -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=-5V, IC= -1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V Transition frequency CLASSIFICATION OF hFE Rank Range fT VCE=-5V, IC= -10mA f=30MHz 150 MHz L H 200-450 450-1000 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn Typical Characteristics PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn S9015