深圳市杰鸿顺电子有限公司 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR (NPN) FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage IC Collector Current -Continuous 5 V 0.5 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 Tstg ℃ Storage Temperature -55-150 ℃ 3.COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 50mA 85 hFE(2) VCE= 1V, IC= 500mA 50 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V CLASSIFICATION OF Rank Range VCE= 6V, IC=20mA fT Transition frequency 150 f =30MHz MHz hFE(1) B C D D3 85-160 120-200 160-300 300-400 http://jhs-ic.hqew.com 深圳市杰鸿顺电子有限公司 Typical Characteristics http://jhs-ic.hqew.com S8050