GS3660 BOOST CONVERT CONTROL IC GENERAL DESCRIPTION The GS3660B is a boost topology switching regulator control IC for battery-used applications field. The GS3660B includes a totem-pole single output stage for driving NPN transistor or N-MOS, high precision reference (0.5V) for comparing output voltage with feedback amplifier, an internal dead-time control for controlling the minimum duty cycle, programmable soft start with short circuit protection function and logic level control for operating mode or standby mode. FEATURES ˙Wide supply voltage operating range: 1.8 to 15V ˙Reference voltage precision: 2% ˙Low current consumption: Operation Mode 5.5mA Standby-by Mode 1μA ˙High speed oscillator frequency: 1MHz max. ˙Programmable Soft Start function (SS) ˙Short Circuit Protection function(SCP) ˙Totem-pole output with adjustable on/off current (for NPN transistors or n-channel MOSFET) TS S O P 8 ˙Logic level control stand-by mode function ˙Package: TS SOP8 TYPICAL APPLICATION ˙Digital Camera ˙PDA ˙Portable Equipment web:http://www.zgsemi.com TEL:0755-27668758 mob:13425146336 1 www.086ic.cn GS3660 FUNCTIONAL BLOCK DIAGRAM 3 7 Reference voltage supply Sawtooth wave oscillator 0.8V 0.1V 1.25V 1 PWM Comp. 36 36kΩ + + + + Error Amp. 500KΩ 0.5V 5 0.1V 30 Ω 30k Output drive control circuit DTC 0.6V 0.22V 8 Soft start & SCP circuit 6 2 4 MARK VIEW PIN DESCRIPTION Name No. FB 1 1 8 2 7 3 4 GS3660 6 5 TEL:0755-27668758 mob:13425146336 SCP 2 VCC BR/CTL OUT GND 3 4 5 6 OSC 7 COMP 8 I/O Description I Error amplifier inverting input pin Connected a capacitor I Soft start and SCP function pin P IC power supply I Output current setting and control pin O Totem-pole output P IC ground Capacitor and resistor connected for I the frequency of oscillation O Error amplifier compensation output web:http://www.zgsemi.com www.086ic.cn GS3660 DC ELECTRICAL CHARACTERISTICS(Ta=25℃,VCC=+2V, unless otherwise noted) Under Voltage Lock-Out section (U.V.L.O.) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VLOW -- - - 0.9 V VUPPER -- 1.1 1.3 1.5 V SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT ISS VSCP= 0V -1.5 -1.0 -0.7 μA VSST -- 0.8 0.9 1.0 V SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Input source current ISCP VSCP= 0V -1.5 -1.0 -0.7 μA S.C.P. threshold voltage VSCP -- 0.7 0.8 0.9 V SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT f RT=3.0KΩ,CT=270pF 400 500 600 KHz Δf / ΔV VCC=2V to 15V - 2 10 % Δf / ΔT Ta = 0℃to 85℃ - 5 - % TEST CONDITIONS MIN. TYP. MAX. UNIT 75 - 85 % Low threshold voltage Upper threshold voltage Soft Start section (S.S.) PARAMETER Input source current Soft start threshold voltage Short Circuit Protection section (S.C.P.) PARAMETER Oscillator section PARAMETER Oscillation frequency Frequency change with voltage Frequency change with temperature Idle Period Adjustment section PARAMETER Maximum duty cycle SYMBOL TDUTY RT=3.0kΩ, CT=270pF, VFB=0.8V Total device section PARAMETER Stand-by current Average supply current SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT ISTANDBY Pin4 is open or VCC - - 1 μA IAVE RB=390Ω,VCC=0~20V - 5.0 10 mA TEL:0755-27668758 mob:13425146336 web:http://www.zgsemi.com www.086ic.cn GS3660 DC ELECTRICAL CHARACTERISTICS (Cont.) Error Amplifier section PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Input threshold voltage VFB VCOMP=450mV 495 500 505 mV VT change with voltage ΔVFB / ΔV VCC=2V to 15V - 5 20 mV VT change with temperature ΔVFB / ΔT Ta = -10℃to 85℃ - 1 - % Input bias current IB -- -1.0 -0.2 1.0 μA Voltage Gain Av -- - 100 - V/V Frequency bandwidth BW Av=0 dB - 6 - MHz Output voltage Positive VPOS -- 0.78 0.87 - Swing Negative VNEG -- - 0.05 0.2 - -40 -24 μA 24 40 - μA MIN. TYP. MAX. UNIT 1.0 1.2 - V 0.8 1.0 - V - 0.1 0.2 V - 0.1 0.2 V Output source current Output sink current ISOURCE ISINK VCOMP=450mV V Output section PARAMETER SYMBOL Output high voltage VOH1 Output high voltage VOH2 Output saturation voltage VOL1 Output saturation voltage VOL2 Output source current TEST CONDITIONS RB=390Ω, IO=-15mA RB=750Ω, IO=-10mA, VCC= 1.8V RB=390Ω, IO=15mA RB=750Ω, IO=10mA, VCC= 1.8V IOSOURCE RB=390Ω, Vo=0.9V - -40 -20 mA IOSINK RB=390Ω, Vo=0.3V 30 40 - mA -- 20 30 40 kΩ SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VBR RB=390Ω 0.15 0.22 0.3 V RB - 300 390 5000 Ω Input off condition IOFF -- -20 - 0 μA Input on condition ION -- - - -45 μA Pin current range IBR -- -1.8 - -0.1 mA Output sink current Internal pull-down resistor RO Output Current Setting / Control section PARAMETER Pin voltage Output current setting resistance TEL:0755-27668758 mob:13425146336 web:http://www.zgsemi.com www.086ic.cn GS3660 TYPICAL CHARACTERISTICS Supply Voltage VS Input Threshold Voltage Supply Voltage VS Supply Current 12 1.2 Supply Current (mA) 10 Input Threshold Voltage Vt (V) Ta=25℃ RB=390Ω 8 6 4 2 0 0 8 4 12 16 0.4 0.2 0 0 8 4 Figure 2 10 5 0 -5 -10 25 50 75 1.2 VCC=2V RB=390Ω Ta=25℃ 1.0 0.8 0.6 0.4 0.2 0 100 0 -10 -40 -50 BR/CTL Pin Current VS Output Source Current -60 600 VCC=2V RB=390Ω Ta=25℃ 500 Output Source Current Iout (mA) Low Level Output Voltage Vout (V) -30 Figure 4 Low Level Output 400 300 200 100 40 -20 High Level Output Current Iout (mA) Figure 3 20 20 High Level Output Ambient Temperature Ta (℃) 0 16 Figure 1 VCC=2V 0 12 Supply Voltage (V) High Level Output Voltage Vout (V) Input Threshold Voltage Variation △V/V(%) 0.6 Supply Voltage (V) 30 0 0.8 20 Ambient Temperature VS Input Threshold Voltage Variation Ratio -15 -25 Ta=25℃ 1.0 60 80 100 Low Level Output Current Iout (mA) Figure 5 TEL:0755-27668758 mob:13425146336 VCC=2V Vout=0.9V Ta=25℃ -50 -40 -30 -20 -10 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 BR/CTL Pin Current IBR (mA) Figure 6 web:http://www.zgsemi.com www.086ic.cn GS3660 TYPICAL CHARACTERISTICS (Cont.) BR/CTL Pin Current VS Supply Current BR/CTL Pin Current VS BR/CTL Pin Voltage 6.0 VCC=2V Ta=25℃ 500 Supply Current ICC (mA) BR/CTL Pin Voltage VBR (mV) 600 400 300 200 4.0 3.0 2.0 1.0 100 0 VCC=2V Ta=25℃ 5.0 0 -0.4 -0.8 -1.2 -1.6 0 -2.0 -20 0 -40 BR/CTL Pin Current IBR(mA) Frequency Variation Ration △f／f(%) Oscillator Frequency fosc (Hz) Triangle Oscillator Frequency VS Timing Resistance VCC=2V Ta=25℃ CT = 100 pF 100K CT = 1000 pF 10K CT = 10000 pF 2K 1K 4K 10K -80 -100 Figure 8 Figure 7 1M -60 BR/CTL Pin Current IBR (μA) 40K 100K Supply Voltage VS Frequency Variation Ration 15 CT=270PF RT=3.0KΩ Ta=25℃ 10 5 0 -5 -10 -15 400K 1M 0 4 8 12 16 20 Supply Voltage VCC (V) Timing Resistor Rt (Ω) Figure 10 Figure 9 Frequency Variation △f／f(%) 30 10 Ambient Temperature VS Frequency Variation Ration VCC=2V CT=270PF RT=3.0LΩ 5 0 - 5 -10 -15 -25 0 25 50 75 100 Ambient Temperature Ta (℃) Figure 11 TEL:0755-27668758 mob:13425146336 web:http://www.zgsemi.com www.086ic.cn GS3660 Output transistor The GS3660B has a totem-pole transistor with a 40mA source/sink current rating to drive an external NPN transistor or NMOS directly. The driving current capability depends on a resistor R that is connected to BR/CTL pin (Pin4) of GS3660B. (see fig. 14) GS3660B 4 BR/CTL R Control Q1 Figure 13. Output transistor driving control circuit BR/CTL pin can also use to control the output of GS3660B for disable or enable function of system. Control Pin Q1 BR/CTL Pin Output Transistor Function Mode Low Off Open Disable Stand-by High On Bias Current Enable Operation TEL:0755-27668758 mob:13425146336 web:http://www.zgsemi.com www.086ic.cn GS3660 APPLICATION NOTE (1) L1 SCD34 D1 20uH Vin +12V Vout +24V/1A IC1 R1 COMP SCP OSC VCC GND R2 47k 1% C1 0.027uF R3 0 C7 C2 2 FB Q2 1 BR/CTL OUT C8 C4 0.1uF 3 220uF/25V 100uF/35V GS3660B C5 R4 0.1uF R6 1k R5 3k Q1 3904 C6 1k 1% 470pF ON/OFF Socket Vin R7 4.7k 1 2 SW1 Figure 14. DC12V to DC24V Boost Regulator L1 20uH C9 Vin +2.5V ~ +6V SCD34 D1 Vout +3.3V IC1 10u R1 COMP SCP OSC VCC GND R2 5.6k 1% C1 0.027uF 2 FB R3 0 C7 Q2 L2 20uH C2 1 BR/CTL OUT C8 MOSFET N GDS C4 0.1uF 3 220uF/25V 100uF/35V GS3660B C5 R4 0.1uF 1k Q1 3904 R6 R5 3k C6 1k 1% 470pF ON/OFF Socket Vin 1 2 R7 4.7k SW1 Figure 15. DC2.5V~DC6V to DC3.3V SEPIC Regulator TEL:0755-27668758 mob:13425146336 web:http://www.zgsemi.com www.086ic.cn GS3660 TSSOP8 SYMBOLS MIN NOR MAX A - - 1.20 A1 0.05 - 0.15 A2 0.96 1.01 1.06 D 2.90 3.00 3.10 E 6.40 BSC E1 4.30 4.40 4.50 L 0.45 0.60 0.75 θ° 0 - 8 UNIT:MM NOTE: 1.JEDEC OUTLINE:MO-187 AA 2.DIMENSIONS “D” DOES NOT INCLUDE MOLD FLASH,PROTRUSIONS OR GATE BURRS.MOLD FLASH,PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE 3.DIMENSIONS “E1” DOES NOT INCLUDE INTERLEAD FLASH,OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.25 PER SIDE. 4.DIMENSIONS “0.22” DOES NOT INCLUDE DAMBAR PROTRUSIONS.ALLOWABLE DAMBAR PROTRUSIONS SHALL BE 0.08 MM TOTAL IN EXCESS OF THE ‘0.22’ DIMENSION AT MAXIMUM MATERIAL CONDITION.DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT.MINIMIM SPAC BETWEEN PROTRUSION AND ADJACENT LEAD IS 0.07MM. 5.DIMENSIONS “D” AND ‘E1’ TO BE DETERMINED AT DATUM PLANE H TEL:0755-27668758/29469758 web:http://www.zgsemi.com www.086ic.cn