Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and working on the best solutions for your applications and creating new system architectures using state-of-the-art IC and power semiconductors. Driven by our commitment to our customers, we offer breakthrough innovations such as the highly efficient CoolMOS™ technology or the revolutionary SiC JFET technology together with Digital Power Control Technologies. Each of which addresses fundamental design and product requirements such as ease of use, highest energy efficiency and increased power density. Our innovative approaches, motivated by continuous improvement, make your application more efficient, more cost-effective and thus overall, more successful. We offer you outstanding quality products for Notebook, Notebook Adapter, Server, Desktop and Graphic Cards, Mainboard, PC Silverbox, Server Power Supplies, Telecom Power Supplies, E-Mobility, Solar, Industrial Welding, Induction Heating, Aircon Systems, Lighting and Motor Control. With dedication and strength we are earnestly working on a better future by providing you more efficient and nature saving products, shaping the world of tomorrow. This commitment serves as our foundation and enabler for reaching international energy standards such as green energy 2020 (in Europe) or NEMS (National Energy Modeling System) in the US. We would like to invite you to explore our broad offer of leading energy efficient products supporting your application needs! 英飛凌的創新效能理論, 秉持著不斷改進的精神,使你的應用系統不只有高效率, 更有效節省成本,因而於市場上更加成功. 我們提供你卓越高品質產品,在筆記電 腦,服務器, 桌上型電腦, 圖型處理器, 主板, 服務器電源, 通信電源, 電動車, 太 陽能, 工業焊機, 電磁爐, 空調系統, 照明系統與動力控制系統.有這樣的專注與 能力, 我們努力專研於給你更環保的產品以及一個更美好的未來. 這個承諾不只 是我們的根基, 更促使我們朝向達到國際能源標準, 像是歐洲的 Green Energy 2020 或美國的 NEMS (National Energy Modeling System) 邁進. 這是我們的榮幸邀請你, 參閱英飛凌廣泛高效能產品目錄, 來找尋最適合你的 應用系統需求的產品. 3 Infineon’s Semiconductor Solutions for Energy Efficient Consumption Highly efficient solutions for Consumer and Computing Infineon‘s latest portfolio of SMPS products is consequently optimized along the requirements of the next generation of highest efficient solutions. Best choice for Renewable Energy Applications Infineon offers a wide product portfolio with a clear focus on efficiency and reliability in your Solar Application. Best solutions for your Lighting Application Infineon offers an innovative product portfolio for general lighting applications, supporting benchmark efficiency improvements, system miniaturization, reliability and overall cost savings. Full range of highly efficient products for your Computing Application Infineon offers superior solutions to fully support the trend towards GreenIT. Infineon products for highest performance and reliability in your Motor Control Application With OptiMOS™ 25–250V products we set the benchmark in the industry. With this broad and comprehensive portfolio Infineon supports your applications perfectly and offers you the best solution for Motor Control systems up to 110V DC supply voltage. 4 5 Contents Applications 8 Notebook 8 Server, Desktop and Graphic Cards 9 Consumer SMPS 11 PC Silverbox 12 Server Power Supply 14 Telecom Power Supply 15 Motor Control 16 E-Mobility 18 Solar 20 Lighting 22 Industrial Welding 24 Induction Heating 25 Aircon 26 Segment Low Voltage 28 Segment High Voltage 52 Segment Silicon Carbide 64 Segment IGBT 72 Segment Power ICS 82 Packages 6 10 Notebook Adapter We create Power Management We live Energy Efficiency 110 7 Server, Desktop and Graphic Cards Best Solutions for Small and Cool System Power Highest Power Density for the Next Generation Voltage Regulation Standards Benchmark technologies significantly improve switching losses in power stages and drivers and thus improve battery lifetime and system reliability. Highest efficiency at all load conditions enables system designers to overcome thermal challenges to reach a new level of system miniaturization. Our latest portfolio of notebook products are consequently optimized along the requirements of the next generation notebook platforms and are easy to design in. AC Adapter OptiMOSTM DC/DC PWM Controller } DC/DC PWM Controller Power management system solutions based on OptiMOS™ technology increase Energy Efficiency in all load conditions, reduce required PCB real estate and are easy to use. Our benchmark solutions demonstrate dramatically increased efficiency even at high currents and high switching frequencies. This supports system designers to achieve their efficiency, power and thermal requirements with a reduced number of phases and thus save overall system cost. Gate Driver OptiMOSTM OptiMOSTM Chip Set, DDR, I/O and other peripheral loads OptiMOSTM OptiMOSTM Gate Driver DC/DC PWM Controller Battery Charger DC/DC PWM Controller } Chip Set, DDR, I/O and other peripheral loads } Chip Set, DDR, I/O and other peripheral loads SIP Gate Driver OptiMOSTM } OptiMOSTM } OptiMOSTM CP U, GPU CP U, GPU Gate Driver DC/DC PWM Controller Clamping, Level Shifters & General Purpose Clamping, Level Shifters & General Purpose Notebook DC / DC Topology buck converter Voltage Class 30V Technology OptiMOS™ Selection recommendation Server, Desktop and Graphic Card DC/ DC Driver 8 Applications Notebook Topology Voltage Class Technology Selection buck converter 25V OptiMOS™ recommendation buck converter 30V OptiMOS™ reference buck converter 12V PX 3517 recommendation 9 Notebook Adapter Cost-effective Products for Consumer SMPS Leading-edge Technologies for Notebook Adapters We offer a wide range of cost-effective products for consumer switch mode power supplies (SMPS). This includes high voltage MOSFETs, control IC´s and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ C6/E6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification we recommend our OptiMOS™ series offering extremely low on-state resistance and low capacitances. New control ICs support topologies such as quasi-resonant flyback and LLC. We offer a wide range of products for notebook adapters including high voltage MOSFETs and control ICs for both PFC and PWM stage, as well as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends towards a significantly higher efficiency level, especially in partial load condition, as well as towards miniaturization of the adapter. Especially versatile is the CoolMOS™ C6/E6 family which combines good efficieny with ease of use. For synchronous rectification we recommend our OptiMOS™ series, offering extremely low on-state resistance and low capacitances. New control ICs support topologies such as quasi-resonant flyback and LLC, which gain market share within the notebook adapter segment. Applications Consumer SMPS Control ICs Control ICs AC Vin Vbulk PFC Main Stage Rectification Vout DC AC Vin PFC Vbulk Main Stage Rectification Vout DC AUX Consumer SMPS Topology Technology Selection AC / DC 600V 600V 600V CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ C6/E6 ease of use Efficiency Recommendation DC / DC 2 Switch-Forward DC-DC (TTF) 2 Switch-Forward DC-DC (TTF) 2 Switch-Forward DC-DC (TTF) Fixed Frequency Flyback Fixed Frequency Flyback Fixed Frequency Flyback Single stage Single stage LLC HB DC-DC LLC HB DC-DC LLC HB DC-DC Quasi-Resonant Flyback DC-DC Quasi-Resonant Flyback DC-DC Quasi-Resonant Flyback DC-DC Active Clamp Forward Active Clamp Forward Active Clamp Forward ZVS Asym. Half Bridge DC-DC ZVS Asym. Half Bridge DC-DC ZVS Asym. Half Bridge DC-DC ITTF ITTF ITTF 600V 600V 600V 650V 650V 650V 650V 600V 650V 600V 650V 900V 900V 900V 800V 800V 800V 650V 600V 650V 600V 500V 600V CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ CP CoolMOS™ C6/E6 CoolMOS™ C6/E6 CoolMOS™ C6/E6 CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CFD2 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ C6/E6 ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation 150-250 V OptiMOS™ Recommendation 650-800V CoolSET™ Recommendation Rectification Aux 10 Voltage Class PFC PFC PFC CoolSET™ Notebook Adapter AC / DC DC / DC Topology DC/DC Technology Selection 600V 600V 600V CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ C6/E6 ease of use Efficiency Recommendation Fixed Frequency Flyback Fixed Frequency Flyback Fixed Frequency Flyback Single stage Single stage LLC HB LLC HB LLC HB Quasi-Resonat Flyback Quasi-Resonat Flyback Quasi-Resonat Flyback Active Clamp Flyback Active Clamp Flyback 650V 650V 650V 650V 600V 650V 600V 650V 900V 900V 900V 800V 800V CoolMOS™ C6/E6 CoolMOS™ C6/E6 CoolMOS™ C6/E6 CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CFD2 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ C3 ease of use Efficiency Recommendation ease of use Efficiency ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Active Clamp Flyback Rectification Voltage Class PFC Boost PFC Boost PFC Boost CoolMOS™ C3 Recommendation Synchronous Rectification 100-120V 800V OptiMOS™ Recommendation Fixed Frequency/QR Flyback 650-800V CoolSET™ Recommendation 11 PC Silverbox The PC Silverbox has seen a tremendous race towards higher efficiency with peak values in the range of 92% and above. Special care is dedicated to the 20% load point. We support these trends with our range of high voltage and low voltage MOSFETs as well as control ICs for power factor correction and PWM. Especially versatile is the CoolMOS™ C6/E6 family, our latest technology in the superjunction field, which was pioneered by Infineon Technologies. CoolMOS™ C6/E6 offers easy paralleling and good efficiency even with less ideal PCB layout. The family is specifically recommended for resonant topologies such as LLC due to its high body diode ruggedness, for hard switching topologies such as TTF we recommend the CoolMOS™ C6/E6. New control ICs support continous current mode PFC and the LLC topology. For the synchronous rectification and the DC/DC we recommend our OptiMOS™ series, which combine extremely low on-state resistance and low capacitances. PC Silverbox AC Vin Vbulk PFC Rectification Vout Technology Selection AC / DC CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ C6/E6 ease of use Efficiency Recommendation DC / DC 2 Switch-Forward (TTF) 2 Switch-Forward (TTF) 2 Switch-Forward (TTF) LLC HB LLC HB LLC HB Active Clamp Forward Active Clamp Forward Active Clamp Forward ZVS Asym. Half-Bridge ZVS Asym. Half-Bridge ZVS Asym. Half-Bridge 600V 600V 600V 650V 600V 650V 800V 800V 800V 650V 600V 650V CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ CP CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CFD2 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ C3 CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CFD2 ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation 40-80V OptiMOS™ Recommendation 650-800V CoolSET™ Recommendation Aux Main Stage Voltage Class 600V 600V 600V Rectification Control ICs Topology PFC Boost PFC Boost PFC Boost Synchronous Rectification Fixed Frequency/QR Flyback Applications Highest Efficiency with new Topologies for PC Silverbox 12V out + DC DC/DC for 3.3V and 5V AUX 12 13 Telecom Power Supply Technologies for best Efficiency in Servers Energy Efficiency for Telecom Power Supply The server market has seen a tremendous shift towards higher efficiency with peak values in the range of 95% and above. The Telecom Supply market has grown fast within the last years. High efficiency targets are required across the entire load range starting at 20% or even at 10% load. We support these trends with our range of high voltage MOSFETs and SiC Schottky barrier Diodes and Driver ICs as well as our low voltage MOSFET series for synchronous rectification and Oring. We specifically recommend our CoolMOS™ C6/E6 series for hard switching applications such as continous current mode PFC and interleaved two transistor forward. For resonant switching applications such as phase shift ZVS or LLC, we offer a wide range of products from the CoolMOS™ C6/E6 series, our latest technology in the superjunction field. For the PFC stage our third generation of SiC Schottky barrier diode offers best cost-performance ratio in the market. For synchronous rectification we offer various voltage classes of the OptiMOS™ such as OptiMOS™ 75V series for 12V output. With ultra-low on-state resistance and very low capacitances the OptiMOS™ series will boost your design to best efficiency. Furthermore, we offer control ICs for the CCM PFC and isolated drivers such as the 1ED and 2ED series. AC/DC rectifier Control ICs AC Vin PFC Vbulk Main Stage Rectification Applications Server Power Supply Isolated DC/DC Oring Vout DC eFuse Hotswap Primary Side PWM AUX Analog/Digital Control ICs Battery Protection AC Vin PFC Vbulk Main Stage Oring, Hot Swap Rectification Vout Synchronous Rectification DC Load AUX Server Power Supply Voltage Class Technology Selection AC / DC PFC Boost PFC Boost PFC Boost Bridgless PFC Bridgless PFC Bridgless PFC 600V 600V 600V 600V 600V 600V CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ C6/E6 CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ C6/E6 ease of use Efficiency Recommendation ease of use Efficiency Recommendation DC/ DC LLC HB LLC HB LLC HB ZVS Asym. Half-Bridge ZVS Asym. Half-Bridge ZVS Asym. Half-Bridge ZVS Full Bridge Phase Shift ZVS Full Bridge Phase Shift ZVS Full Bridge Phase Shift ITTF ITTF ITTF 650V 600V 650V 650V 600V 650V 650V 600V 650V 600V 500V 600V CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CFD2 CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CFD2 CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CFD2 CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ C6/E6 ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation Synchronous Rectification 40-80V OptiMOS™ Recommendation Rectification Oring FET Aux 14 Topology Fixed Frequency/QR Flyback niPoL, Buck 30V OptiMOS™ Recommendation 650-800V CoolSET™ Recommendation Load Telecom AC / DC DC / DC Topology PFC Bridgeless PFC LLC HB DC-DC LLC HB DC-DC ZVS Full Bridge Phase Shift ZVS Full Bridge Phase Shift FRC Full Bridge ITTF Full Bridge Voltage Class 600V 600V 600V 650V 600V 650V 600V 600V Technology CoolMOS™ C6/E6 CoolMOS™ CP CoolMOS™ CP CoolMOS™ CFD2 CoolMOS™ CP CoolMOS™ CFD2 CollMOS™ CP / ThinQ!™ Diodes CoolMOS™ C6 / CoolMOS™ CP Rectification 80V - 200V OptiMOS™ Oring 60V - 100V OptiMOS™ Battery Protection 60V - 150V OptiMOS™ eFuse, Hotswap 60V - 150V OptiMOS™ Primary Side PWM 75V - 200V OptiMOS™ Synchronous Rectification 30V - 100V OptiMOS™ niPoL, Buck 25V / 30V OptiMOS™ 15 Motor Control Motor Control – a high current application with a wide range of system power from 1W to 50.000W requires MOSFETs with: High current capability Lowest on-state resistance (RDS(on)) Outstanding product performance & quality Your Application – Our Solution Application Packages 4.2V – 18V OptiMOS™ 25V, 30V SuperSO8, D²PAK, TO-220 Professional 4.2V – 36V OptiMOS™ 25V, 30V, 40V, 60V Light Electric Vehicles (LEV) Pedelec 24V – 36V OptiMOS™ 60V, 75V, 80V CanPAK™ , SuperSO8, D2PAK, D2PAK 7pin, TO220 SuperSO8, DPAK E-scooter 24V – 36V OptiMOS™ 75V, 80V, 100V RC-toys Toy-grade 1.2V – 24V OptiMOS™ 25V, 30V, 40V, 60V Hobby-grade 7.2V – 48V OptiMOS™ 25V, 30V, 40V, 60V, 75V, 80V SuperSO8 and CanPAK™ S & M Forklift For each system the right product: Fans Small size Medium size Big size < 24V OptiMOS™ 40V, 60V, 75V, 80V 24V – 60V OptiMOS™ 60V, 75V, 80V, 100V > 60V 6V – 48V SuperSO8, CanPAK™ M, TO-220, D²PAK 7pin S3O8, CanPAK™ S, D-PAK TO-220, TO-220 FB D²PAK, D²PAK 7pin OptiMOS™ 120, 150V, 200, 250V OptiMOS™ 25V -100V SuperSO8, CanPAK™, S3O8, D2PAK, DPAK Features and Benefits of OptiMOS™ 25V – 250V for Motor Control M M Voltage Class Do-it-yourself (DIY) Power Tools With OptiMOS™ 25 – 250V products we set the benchmark in the industry. With this broad and comprehensive portfolio Infineon supports your application perfectly and offers you the best solution for Motor Control systems up to 110V DC supply voltage. M Nominal Battery Voltage Applications OptiMOS™ for Highest Performance and Reliability in your Drives Application Features High current capability Lowest on-state resistance (RDS(on)) Outstanding product performance & quality Highest power density Easy to use Half-bridge DC brush motors unidirectional H-bridge DC brush motors bidirectional B6-bridge Brushless DC (BLDC) motors OptiMOS™ 25V to 250V – a comprehensive portfolio supporting the needs for all Motor Control requirements 250V 20 Voltage Class [V] 200V 20 150V 50 3.6 100V 24 2.5 80 1.9 80V 34 2.3 75V 60V 1.0 40V 1.0 80 6 0.8 25V 6.2 17 0.9 30V 6.5 33 1.0 20V 0 220 6.5 120V Benefits Highest reliability Highest efficiency Highest power density Lowest board space consumption Minimal device paralleling required System cost improvement Enviromental friendly Easy-to-design-in products 420 1 10 100 1000 RDS(on) 16 17 Best Solutions for Battery Charger Best Solution for Battery Management To recharge the battery of an electric car, a charger is needed. In cars with on-board chargers the batteries can be recharged by plugging them into a standard power outlet at home. Battery charging via the power grid requires a flexible switching structure in order to handle the different voltage levels and available power existing in different countries. On-board chargers have to be very efficient so that they are as small and light as possible. A long-term trend is towards bi-directional charger functions for not only drawing current from the grid but feeding excess energy back into it. Infineon’s comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors, power modules, etc.) lends itself perfectly to compact charging units. The products also function at high switching frequencies for use in small and light charger designs. Our products in this sector include MOSFETs: CoolMOS™ and the flexible Easy 1B/2B power modules for overnight low-amp charging, HybridPACK™1 for fast charging with high amps and high-performance 16- and 32-bit microcontroller solutions. The Battery Management System (BMS) controls battery charge and discharge. An intelligent battery management system is necessary to lengthen battery life, which reduces the vehicle cost over its entire lifetime. The system constantly controls the functionality and state of charge of the battery cells. As they age, the storage capacity of the individual battery cells may lessen at a different speed for each cell. The challenge is to optimize cell utilization. Circuits to test the cells, and active balancing of the cells during the charging and discharging process enable the battery life and cruising range to be effectively lengthened. Our solution for active cell balancing increases usable battery capacity by over 10 percent. The company’s microcontrollers and sensors monitor functionality, charge and depth of discharge. These include the 8-bit XC886CM microcontroller family, the 16/32-bit XC22xx microcontroller family, the OptiMOS™ low-voltage MOSFETs, the TLE 6250/51 CAN transceivers as well as the TLE 6389-2GV and TLE 42994GM controllers. AC/DC Battery Charger Battery Management IPx65RxxxCFDA 1ED020I12FA Applications E-Mobility Private CAN L1 RFI Filter PFC DC/DC Converter IPx65RxxxCFDA UCC27322-DGN IDP 23E60 Battery Block Slave Battery Master XC886CM 6x IPG 20N04S4L-08 IPD 70N03S4L IPD 70N10S3L TLE 6250G TLE 6389-2GV 16/32-bit Microcontroller XC2267-96F66L TLE 6250G TLE 42994 Battery Block Slave Main Switch XC886CM 6x IPG 20N04S4L-08 IPD 70N03S4L IPD 70N10S3L TLE 6250G TLE 6389-2GV TLE 4906K TLE 4998 IKP 20N60T 2x IKW 75N60T XC27xx L2 Power (grid) RFI Filter PFC DC/DC Converter Battery Management L3 N PFC L1 L2 Isolation L3 16/32-bit MCU XC27xx DC/DC Converter I/V Measurement RFI Filter Control + Display Ecar (Battery charger) 18 – CAN Topology Voltage Technology Selection Ecar (Battery management) AC / DC 650V 650V CoolMOS™ CFDA CoolMOS™ CFDA Recommendation Recommendation Main Switch DC / DC ZVS Phase Shifted Full Bridge LLC Converter 650V 650V CoolMOS™ CFDA CoolMOS™ CFDA Recommendation Recommendation Battery Block Slave Microcontroller XC27xx Recommendation - 150–400V XC886CM 6x IPG 20N04S4L-08 IPD 70N03S4L IPD 70N10S3L TLE 6250G TLE 6389-2GV Bridgeless converter Totem Pole Control Board + Battery Block Slave Isolation AC/DC (15V) Public CAN Topology Voltage Technology Selection high power high current 600V IGBT Trenchstop™ Recommendation step up step down 30V 40V 100V OptiMOS™ OptiMOS™ OptiMOS™ Recommendation Recommendation Recommendation 19 Infineon Leading Products for High Efficiency and Reliability Current Source Microinverter Applications Solar Voltage Source Microinverter In 2011 solar market again grows 45%, from 17,5Gw to 25Gw globally in terms of installation. Germany and Italy remain the biggest markets, while US, China, Japan, India are catching up quickly. 2011 is also a year in which microinverter and DC-DC optimizer really picked up, both grew more than 100% with rapid market acceptance. Efficiency and reliability remain the most important requirement, where power semiconductors play a key role. OptiMOS™ There’re two ways to increase system efficiency: increase inverter efficiency, or in addition, use distributed power management to perform panel level maximum power point tracking, with either microinverter or DC-DC optimizer plus string inverter. Infineon provides a comprehensive portfolio of high-performance products – including CoolMOS™, OptiMOS™, thinQ!™ (SiC Diode), CoolSiC, IGBTs, IGBT modules, Eice DRIVER™, controller & meter – to deliver the best efficiency and reliability. Infineon’s leading edge technology like superjunction MOSFET, Trench+Fieldstop IGBT, Coreless transformer driver, etc, combined with rich experience and highest quality, ensured our No.1 position in solar application. We’re devoted to grow further with the industry to bring efficiency beyond 99% and make solar power applicable where ever the sun is shining. DC input CoolMOS™ Rectification OptiMOS™ 150V-200V SiC Diode BSC190N15NS3 G IDH05S120 DC/DC Optimizer OptiMOS™ thinQ!™ CoolMOS™ Unfolding DC /DC CoolMOS™ 800V-900V SPB17N80C3 OptiMOS™ 60V BSC1028N06NS Rectification SiC Diode IDD04SG60C DC/AC CoolMOS™ 600V/650V IPB65R190CFD String Inverter Infineon leading products for Complete Solar System OptiMOS™ CoolMOS™ thinQ!™ Boost DC input CoolMOS™ CoolSiC IGBT TrenchStop™ IGBT Highspeed3 OptiMOS™ CoolMOS™ thinQ!™ OptiMOS™ 60V-100V BSC042NE7NS3 G DC/AC DC/DC Boost CoolMOS™ C6 650V IPW65R037C6 SiC Diode 600V IDH16S60C DC/DC CoolMOS™ CFD 650V IPW65R041CFD SiC Diode 600V IDH16S60C DC/AC IGBT Trenchstop™ 600V IKW50N60T CoolMOS™ CFD 650V IPW65R041CFD Smart Meter String Inverter UMF11x0 Active Junction Box OptiMOS™ Sensing PWM Auxiliary Power Supply CoolSET™ 20 MPPT Controller & Meter XE162FL-16F80L XMC4000 UMF11x0 Driver EiceDRIVER™ Boost IGBT Highspeed 3 1200V IKW40N120H3 SiC JEFT 1200V IJW120R050T1 Inverter IGBT Trenchstop 600V IKW50N60T SiC JEFT 1200V IJW120R050T1 Other products CoolSET™ IGBT Highspeed3 600V/1200V EiceDriver™ Micro controller Typical part ICE2A280Z IKW50N60H3, IKW40N120H3 1ED020I12-F2 XE162FL Function Auxilary Power Supply >16kHz switching IGBT IGBT Driver MPPT and PWM control 21 Lighting CoolMOS™ Selection Table The trend towards energy efficient lighting is apparent and requires both efficient light source technologies and electronics components. Infineon as global number 1 ranking power semiconductor market leader for the last 8 consecutive years, offers an innovative product portfolio for general lighting applications, supporting benchmark efficiency improvements, system miniaturization, realiability and overall cost savings. CoolMOS™ Voltage Range Infineon delivers innovative, high-performance solutions with best-in-class technologies that can be used in a broad range of applications. 500V Fully integrated ballast controllers for fluorescent lamps Highly efficient offline LED driver ICs for lamp retrofits and low power LED converters DC/DC switched mode and linear LED drivers for single string LED applications High performance power management ICs and microcontrollers for intelligent lighting systems Extensive portfolio of leading edge CoolMOS™ and OptiMOS™ Power MOSFETs 600V 650V 800V 900V C3 C3 0.085Ω ... 0.12Ω ... 2.7Ω 1.2Ω Product Family and RDS(on) Range (* not for new designs) Lighting applications vs. power range and topology Applications & Topology Applications Global concerns over climate changes require using our limited energy resources more efficiently. Approximately 20% of the global electrical energy is consumed by lighting applications. High Intensity Discharge (HID) Full-Bridge/Half-Bridge Outdoor & Industrial Lighing CE C3* CP 0.19Ω ... 0.07Ω ... 0.14Ω ... 3Ω 3Ω 0.52Ω CP C3 C6/E6 CFD 0.045Ω 0.07Ω 0.041Ω 0.08Ω ... ... ... ... 0.6Ω 6Ω CFD2 C6/E6 C3* 0.041Ω 0.037Ω 0.07Ω ... ... ... 3.3Ω 0.72Ω 1.4Ω FL HID HID 0.6Ω 0.6Ω Application & Topologies Linear/Compact Fluorescent (LFL, CFL) Resonant Half-Bridge Commercial, Industrial, Residential, Outdoor Lighting LED High Power DCM PFC + LLC Half-Bridge + DC/DC Commercial, Outdoor, Industrial Lighting PFC / Resonant Half-Bridge FL PFC / Resonant Full-Bridge HID HID LED Single Stage PFC / Flyback LED Mid Power DCM PFC + QR Flyback with PCC* Commerial & Industrial Lighting low power low power LED PFC / QR Flyback Power Range [W] PFC / LLC Half-Bridge LED low power LED Single Stage PFC / non-isolated Buck LED Low Power Single stage PFC/Flyback, PCC* Single stage PFC/non-isolated Buck, PCC* DC/DC Buck, Boost, Linear Residential & Commercial Lighting (e.g. Retrofit Lamps, Downlights, Spotlights LED low power LED mid power LED high power LED high power LED high power mid power LED mid power LED high power * Primary side current control 22 23 Induction Heating Our IGBTs for Welding – the Power is in Your Hands Highest Performance, Efficiency and Reliability IGBTs for Induction Heating Cooktops In the field of industrial welding, discretes are used for home and small inverterised welders. Infineon’s high speed devices are used to reduce the size of the active components and transformer (25kHz --> 70kHz). Infineon’s IGBTs offer high speed/high performance to get the best out of your system. Welding Inverter Full bridge Two transistor forward 4x High Speed IGBT T1 2x High Speed IGBT T3 D2 VIN T1 iout D1 D1 Lout D3 D4 iout New Edition IHW40N60RF and 600V HighSpeed 3 family have been added to address high speed switching topologies where switching losses have been optimized. These devices provide excellent performance over temperature and ensure up to 20% lower switching losses compared to competitor devices. The 1350V 3rd Generation induction heating specific IGBT has recently been added to the portfolio. The device has been designed to offer a higher voltage breakthrough headroom to offer customer higher reliability whilst not compromising device performance. T2 T4 Being the market leader in IGBTs, we offer a comprehensive, high performance portfolio of 600V, 1100V, 1200V, 1350V, 1600V discrete IGBTs for resonant-switching applications like induction heating cooktops. The portfolio has been developed to provide benchmark performance in terms of switching and conduction losses, which ensures best-in-class efficiency and fast time to market. Lout VIN T2 Applications Industrial Welding (MMA < 280A) D2 Induction Heating Inverter (Current Resonance) Induction Heating Inverter (Voltage Resonance) Half bridge PFC Single switch Lres RC–IGBT Industrial Welding DC/AC PFC AC/DC Aux IGBT Driver 24 Topology Voltage Class Technology 600V 1200V 600V 1200V HighSpeed 3 HighSpeed 3 HighSpeed 3 HighSpeed 3 Recommendation Recommendation Recommendation Recommendation Boost Converter / switch Boost Converter / switch 600V 1200V HighSpeed 3 HighSpeed 3 Reference Reference Boost Converter 650V CoolSET F3 Recommendation EiceDRIVER™ (1ED) EiceDRIVER™ (2ED) Efficiency Recommendation 600V/1200V 600V/1200V Cres RC-IGBT 2 Lres CK2 Cres VAC Cbus 2 Selection Full-Bridge Full-Bridge Two Transistor Forward Two Transistor Forward Half-Bridge Single Channel Half-Bridge Dual Channel Cbus Lf Cres CK1 HV-Driver VAC MCU Lf Induction Heating Topology Voltage Class DC/AC Series-Resonant Half-Bridge 20kHz Series-Resonant Half-Bridge 60kHz Quasi-Resonant Single Ended Quasi-Resonant Single Ended Quasi-Resonant Single Ended Quasi-Resonant Single Ended 600V 600V 1100V 1200V 1350V 1600V RC-H RC-HF RC-H RC-H RC-H RC-H Recommendation Recommendation Recommendation Reference Reference Recommendation Flyback Flyback Boost Converter 650V 800V 800V CoolSET QR CoolSET QR CoolSET F3 Efficiency Recommendation Reference Aux Technology Selection 25 Aircon Applications Infineon’s Innovative Approach for Aircon Reference Board We offer a wide portfolio of energy saving chips for the whole system chain of power electronic devices for air-conditioning systems. To enable engineers a fast entry in the usage of our devices an aircon reference board has been developed. Features 1 kW compressor inverter stage using 15 A RC-Drives IGBT in DPAK (TO-252) 200 W outdoor fan inverter stage using 4 A RC-Drives IGBT in DPAK (TO-252) 1.5 kW CCM-PFC using 20 A HighSpeed 3 IGBT 10 A SiC-Diode RC RST BSL Motor 0 CAN 5 kV Isolation OCDS JTAG HEATSINK SSC & ASC HALL We are the Leader in Energy Efficiency Technologies XC878 RC RC RC RC SiC Diode Being the Leader in Energy Efficiency Technologies, Infineon’s products are enormously important for future energy supplies in terms of both exploiting renewables and using energy efficiently. Explore our wide offer of high-end products for your application: Rectifier RC Driver CAN OP AMP motor 0 Gain 23 6ED003 L06-F ICE3PCS02G 10mΩ 20mΩ 15V DC/CD CoolSet F3 BSL ASC CAN 5 kV Isolation OCDS JTAG HALL 2 HS3 IGBT shunt motor O 5V LDO OP AMP motor 1 Gain 16 shunt PFC C h o k e Relais OP AMP PFC Gain 16 offset 2.5V 20mΩ XE164 RC RC RC RC RC RC 270µF 400V shunt motor 1 EMC Filter ENCODER RST HALL 0 6ED003 L06-F 270uF 400V SSC CAN Motor1 Aircon PFC AC / DC DC / AC Aux IGBT Driver Topology Voltage Class 230V AC DC Technology Selection PFC CCM (low frequency) PFC CCM (high frequency) PFC CCM PFC CCM 600V 600V 600V 600V TRENCHSTOP™ HighSpeed 3 CoolMOS™ C6 SiC Diode Recommendation Recommendation Reference Recommendation B6-VSI B6-VSI 600V 600V RC-Drives IGBT TRENCHSTOP™ Recommendation Efficiency Boost Converter 650V CoolSET™ F3 Reference Driver for B6 Bridge 600V EiceDRIVER™ (6ED) Recommendation Infineon’s 650V CoolMOS™ CFD2 – market leading technology with integrated fast body diode World’s lowest area specific on-state resistance (Ron * A) Softer commutation behavior and therefore better EMI behavior Best fit for applications such as telecom, server, battery charging, solar, HID lamp ballast, LED lighting Infineon’s PowerStage 5x6 and 3x3 – save space, minimize losses, boost efficiency Shrink your design up to 85% Peak efficiency of 93.5% Best fit for applications such as notebook, motherboard, server and telecom Infineon’s RC-Drives Fast IGBTs – drive high-frequency inverter for comfortable quietness Smooth switching performance leading to low EMI levels Optimized Eon, Eoff and Qrr for low switching losses Best fit for applications in domestic and industrial drives like compressors, pumps and fans Infineon’s New OptiMOS™ 40V/60V Industry’s first 1mW 40V product in SuperSO8 35% lower RDS(on) than alternative devices Highest system efficiency and power density Best fit for applications such as sychronous rectification, solar micro inverter, isolated DC/DC converters, motor control for 12-48V systems and Or-ing switches For further information please visit our website: 26 [ www.infineon.com/power_management_new_products ] 27 OptiMOS™ Available in innovative space saving packages like CanPAK™, SuperSO8 or S3O8, these products reduce the volume consumption up to more than 90%. In addition, they improve switching noise and EMI for SMPS, as well as other industrial applications. Efficiency of OptiMOS™ 25V in a six-phase server VRD 96 94 92 90 88 86 84 82 80 78 76 74 72 70 Outstanding performance of the new OptiMOS™ 25V and 30V products is exemplified on a six-phase Server Vcore VRD. 93% peak efficiency and >90% full load efficiency is demonstrated with the new OptiMOS™ 25V products in SuperSO8 package. (HighSide: BSC050NE2LS; LowSide: BSC010NE2LS) Vin = 12V, Vout = 1.2V Lout = 210nH, Vdrive = 5V fswitch = 350kHz fswitch = 500kHz 0 20 40 60 80 100 120 140 160 180 4 Infineon Next Best Competitor 3 2 1 0 25 30 40 Voltage Class [V] 60 75 Infineon 80 17.5 Next Best Competitor Vin = 12V Vdrive = 5V Iout = 20A 15.0 60 12.5 40 20 0 IGBT 5 Clean waveforms for optimized EMI bahaviour make new OptiMOS™ 25V/30V products easy to use 100 80 100 120 150 Voltage Class [V] 200 250 10.5 7.5 5.0 2.5 0 -2.5 -5.0 0 100 200 300 400 500 600 700 800 900 1000 Packages Time [ns] With the new OptiMOS™ 25V/30V products short switching times (rise and fall times <5ns) go in hand with excellent EMI behaviour. An integrated damping network guarantees low over- and undershoot and minimizes ringing without sacrifycing efficiency Power ICs 6 120 Voltage across SyncFet [V] RDS(on) @ 10V [mΩ] in SuperSO8 RDS(on) @ 10V [mΩ] in SuperSO8 Output Current [A] 7 Applications With the new OptiMOS™ products, we have the best solution to Save overall system costs by reducing the number of phases in multiphase converters Reduce power losses and increase Efficiency for all load conditions Save space with smallest packages like CanPAK™ or S308 Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in Efficiency [%] OptiMOS™ products are suitable for a wide range of applications: VR-modules for server Synchronous rectification for AC/DC SMPS DC/DC converters Motor control 12V-110V system Solar micro inverter and Maximum Power Point Tracker (MPPT) LED lighting Notebook and desktop Low Voltage The solution can be found in the low voltage Power MOSFET family, OptiMOS™ 20V up to 250V, which consistently sets the benchmark in key specifications for power system design, including leading onstate resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. Lower power losses enable system cost improvement by reducing the need for device paralleling and allowing smaller heatsinks. OptiMOS™ family also contributes to customers’ goals of providing more compact power supply designs. With the new OptiMOS™ 25V and 30V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. High Voltage Infineon’s innovative products serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). In all these areas, our customers face the challenge of growing power demand, higher efficiency and lower cost. At the same time, the available space is constantly shrinking, leading to higher power density requirements. Demonstrating > 93% Efficiency in Voltage Regulation for Power Applications Silicon Carbide Leading-Edge Solutions for a Better Future 28 29 SuperSO8 / S3O8 – the Intelligent Way to Highest Efficiency and Power Density With OptiMOS™ 40V – 250V products, we set the benchmark in industry. The leading on-state resistance RDS(ON) and switching behaviour reduce power losses and enable overall efficiency levels exceeding 95%. With these products Infineon supports the market trend towards Energy Efficiency targets such as Energy Star Diamond. CanPAK™ – Best Thermal Behaviour in a Tiny Footprint 150 90 145 88 86 BSB028N06NN3 G Competitor 84 82 50 100 150 200 250 300 350 400 450 500 Output Power [W] 140 135 130 Competitor IPP110N20N IPB065N15N3 120 550 120 10 15 20 25 30 output current [A] PowerStage3x3 and PowerStage 5x6 – Save Space, Minimize Losses, Boost Efficiency PowerStage 3x3 and Powerstage 5x6 are leadless SMD packages, which integrate the low-side and high-side MOSFETs of a synchronous DC/DC converter into a 3.0x3.0mm² or 5.0x6.0mm² package outline. Designers are able to shrink their designs up to 85% by replacing two seperate discrete packages such as SO-8 or SuperSO8 with this new package. Both, the small outline and the interconnection of the two MOSFETs within the package minimize the loop inductance which boosts efficiency. With the new OptiMOS™ technology PowerStage 3x3 and Powerstage 5x6 achieve a peak efficiency of 93,5%. PowerStage 3x3 can handle an application current up to 12,5A and PowerStage 5x6 up to 30A. Packages Power ICs IGBT More than 1% higher peak efficiency can be reached by using Infineon products in synchronous rectification of a 600W Server power supply with 12V output. 35 Silicon Carbide overshoot [V] Efficiency [%] 155 High Voltage CanPAK™ portfolio is the best fit for a broad number of industrial applications like voltage regulator for servers, DC/DC converters, solar micro inverters and Maximum Power Point Trackers (MPPT), low voltage drives and synchronous rectification. With only 31mm² footprint, CanPAK™ M allows 65% space reduction in power components on the board compared to traditional D2PAK. In addition, the metal ‘Can’ enables doublesided cooling along with almost no package parasitic inductances, leading to higher systems efficiency. Efficiency 92 Low Voltage In applications like synchronous rectification in SMPS, motor drives and DC/DC converters, high power density and high efficiency are the major driving factors. Moving from TO-220 to SuperSO8 reduces the volume consumption drastically. With three times lower parasitics compared to TO-220, SuperSO8 offers highest efficiency and lowest design efforts due to reduced spikes. OptiMOS™ technology enables for the first time very low RDS(ON) values needed for high current applications in space saving packages such as SuperSO8, S3O8 and CanPAK™, which were previously only possible in bulky packages. 94 Applications Always a Step Ahead with Infineon 30 31 TO-252 DPAK CanPAK™ M-Can CanPAK™ S-Can TO-263 7 Pin TO-220 TO-220 FullPAK Part Number Monolithic integrated Schottky like diode BVDSS (V) High Side Low Side High Side Low Side RDS(ON)= 1.9mΩ BSC0910NDI 25 5.9 1.6 7.7 25.0 BSC026N02KS G BSC0911ND – 25 4.8 1.7 7.7 25.0 RDS(ON)=2.6mΩ BSC0921NDI 30 7.0 2.1 5.8 21.0 SuperSO8 SO-8 BSC019N02KS G <2 2-4 4-10 RDS(on) [mΩ] @ VGS=4,5V max Qg [nC] @ VGS=4,5V typ. BSC046N02KS G BSC0923NDI 30 7.0 3.7 5.2 12.2 RDS(ON)=4.6mΩ BSC0924NDI 30 7.0 5.2 5.2 8.6 BSO330N02K G BSC0925ND – 30 6.4 6.4 5.2 6.7 RDS(ON)=33.0mΩ BSZ0907ND – 30 13.0 10.0 4.3 5.3 BSZ0908ND – 30 25.0 13.0 2.0 4.3 30-40 Low Voltage RDS(on) @VGS=10V TO-251 / TO-251 SL [mΩ] Applications OptiMOS™ 25/30V Normal Level in PowerStage 3x3 and 5x6 OptiMOS™ 20V Super Logic Level <1.0 TO-252 DPAK CanPAK™ M-Can CanPAK™ S-Can TO-263 7 Pin TO-220 TO-220 FullPAK SuperSO8 BSB008NE2LX BSC009NE2LS RDS(ON)= 0.8mΩ RDS(ON)=0.9mΩ BSB012NE2LX BSC010NE2LS RDS(ON)=1.2mΩ RDS(ON)=1.0mΩ BSB013NE2LXI BSC010NE2LSI RDS(ON)=1.3mΩ RDS(ON)=1.05mΩ S308 Silicon Carbide RDS(on) @VGS=10V TO-251 / TO-251 SL [mΩ] High Voltage OptiMOS™ 25V Logic Level BSC014NE2LSI 1-2 RDS(ON)=1.4mΩ BSC018NE2LS BSZ18NE2LS RDS(ON)=1.8mΩ RDS(ON)=1.8mΩ BSC018NE2LSI BSZ018NE2LSI RDS(ON)=1.8mΩ RDS(ON)=1.8mΩ BSC024NE2LS RDS(ON)=2.4mΩ BSC032NE2LS 2-4 RDS(ON)=3.2mΩ BSF030NE2LQ RDS(ON)=3.0mΩ 4-6 IGBT BSZ036NE2LS RDS(ON)=3.6mΩ BSC050NE2LS RDS(ON)=5.0mΩ Packages Power ICs BSZ060NE2LS RDS(ON)=6.0mΩ 32 33 CanPAK™ S-Can TO-263 D2PAK TO-263 7 Pin BSB012N03LX3 G IPB009N03L G RDS(ON)=1.2mΩ RDS(ON)=0.95mΩ TO-220 Super SO8 S308 Bare Die (RDS(on) typ.) BSC011N03LS RDS(on) @VGS=10V TO-251 / TO-251 SL [mΩ] IPC218N03L3 RDS(on)=1.1mΩ BSC011N03LSI TO-252 DPAK CanPAK™ M-Can CanPAK™ S-Can TO-263 D2PAK TO-263 7 Pin TO-220 IPB096N03L G IPP096N03L G BSC080N03LS G BSZ088N03LS G RDS(ON)=9.0mΩ RDS(ON)=9.0mΩ RDS(ON)=9.6mΩ RDS(ON)=9.6mΩ RDS(ON)=8.0mΩ RDS(ON)=8.8mΩ BSC090N03LS G RDS(ON)=9.0mΩ BSC0909NS RDS(ON)=1.4mΩ RDS(on)=9.2mΩ BSB017N03LX3 G BSC016N03LS G BSZ019N03LS RDS(ON)=1.7mΩ RDS(ON)=1.6mΩ IPC055N03L3 RDS(on)=1.9mΩ BSC0901NS BSC0901NSI RDS(on)=2.0mΩ BSF024N03LT3 G BSC020N03LS G BSZ0901NSI RDS(ON)=2.4mΩ RDS(ON)=2.0mΩ IPC042N03L3 RDS(on)=2.1mΩ BSC0902NS BSZ0902NS RDS(on)=2.6mΩ RDS(on)=2.6mΩ IPD105N03L G IPB114N03L G IPP114N03L G BSC100N03LS G BSZ100N03LS G RDS(ON)=10.5mΩ RDS(ON)=10.5mΩ RDS(ON)=11.4mΩ RDS(ON)=11.4mΩ RDS(ON)=10.0mΩ RDS(ON)=10.0mΩ BSC120N03LS G BSZ0909NS BSC0902NSI 2 x 15 RDS(on)=2.8mΩ IPD031N03L G IPB034N03L G IPP034N03L G BSC030N03LS G BSZ035N03LS G RDS(ON)=3.1mΩ RDS(ON)=3.1mΩ RDS(ON)=3.4mΩ RDS(ON)=3.4mΩ RDS(ON)=3.0mΩ RDS(on)=12.0mΩ IPS135N03L G IPD135N03L G IPB147N03L G IPP147N03L G BSZ130N03LS G RDS(ON)=13.5mΩ RDS(ON)=13.5mΩ RDS(ON)=14.7mΩ RDS(ON)=14.7mΩ RDS(ON)=13.0mΩ 7+9 2 x 7.2 RDS(on)=2.8mΩ IPS031N03L G RDS(on)=12.0mΩ IPC014N03L3 9 + 19 BSC025N03LS G BSZ0902NSI 2-4 IPS105N03L G 10-15 RDS(on)=1.9mΩ RDS(ON)=2.5mΩ Bare Die (RDS(on) typ.) IPD090N03L G BSC014N03LS G 1-2 S308 IPS090N03L G 8-10 RDS(on)=1.1mΩ Super SO8 Low Voltage CanPAK™ M-Can High Voltage TO-252 DPAK BSC072N03LD G RDS(ON)=7.2mΩ BSC150N03LD G RDS(ON)=15.0mΩ RDS(ON)=3.5mΩ Silicon Carbide RDS(on) @VGS=10V TO-251 / TO-251 SL [mΩ] OptiMOS™ 30V Logic Level / Normal Level BSC034N03LS G BSZ0904NSI RDS(ON)=3.4mΩ Applications OptiMOS™ 30V Logic Level RDS(on)=4.0mΩ BSC0904NSI RDS(on)=3.7mΩ IPS040N03L G IPD040N03L G BSF050N03LQ3 G IPB042N03L G IPP042N03L G BSC042N03LS G BSZ050N03LS G IPC028N03L3 RDS(ON)=4.0mΩ RDS(ON)=4.0mΩ RDS(ON)=5.0mΩ RDS(ON)=4.2mΩ RDS(ON)=4.2mΩ RDS(ON)=4.2mΩ RDS(ON)=5.0mΩ IPS050N03L G IPD050N03L G IPB055N03L G IPP055N03L G BSC0906NS BSZ058N03LS G RDS(ON)=5.0mΩ RDS(ON)=5.0mΩ RDS(ON)=5.5mΩ RDS(ON)=5.5mΩ RDS(on)=4.5mΩ RDS(ON)=5.8mΩ IPC022N03L3 BSC050N03LS G 4-6 RDS(ON)=5.0mΩ IGBT BSC052N03LS RDS(on)=5.2mΩ BSC057N03LS G RDS(ON)=5.7mΩ IPD060N03L G IPB065N03L G IPP065N03L G BSZ065N03LS RDS(ON)=6.0mΩ RDS(ON)=6.0mΩ RDS(ON)=6.5mΩ RDS(ON)=6.5mΩ RDS(on)=6.5mΩ IPS075N03L G IPD075N03L G IPB080N03L G IPP080N03L G BSC0908NS RDS(ON)=7.5mΩ RDS(ON)=7.5mΩ RDS(ON)=8.0mΩ RDS(ON)=8.0mΩ RDS(on)=8.0mΩ Packages Power ICs 6-8 IPS060N03L G 34 35 BSZ035N03MS G RDS(ON)=3.5mΩ 2-6 TO-263 7 Pin TO-220 TO-220 FullPAK SuperSO8 S08 CanPAK™ M TO-263 D2PAK TO-263 7 Pin TO-220 TO-220 FullPAK Super SO8 BSC010N04LS BSC016N03MS G RDS(ON)=1.6mΩ BSC010N04LSI** BSC020N03MS G BSO033N03MS G RDS(ON)=2.0mΩ RDS(ON)=3.3mΩ BSC014N04LS BSC025N03MS G BSO040N03MS G RDS(ON)=2.5mΩ RDS(ON)=4.0mΩ BSC014N04LSI** Bare Die (RDS(on) typ.) RDS(ON)=1.05mΩ BSC030N03MS G RDS(ON)=3.0mΩ RDS(ON)=1.4mΩ RDS(ON)=1.45mΩ <2 BSB014N04LX3 G IPB015N04N G RDS(ON)=1.4mΩ RDS(ON)=1.5mΩ IPB011N04L G RDS(ON)=1.1mΩ BSB015N04NX3 G IPB015N04L G RDS(ON)=1.5mΩ RDS(ON)=1.5mΩ IPB011N04N G RDS(ON)=1.1mΩ IPP015N04N G RDS(ON)=1.5mΩ BSC016N04LS G RDS(ON)=1.6mΩ BSZ050N03MS G RDS(ON)=5.0mΩ BSC042N03MS G BSO051N03MS G RDS(ON)=4.2mΩ RDS(ON)=5.1mΩ BSZ058N03MS G RDS(ON)=5.8mΩ BSC050N03MS G RDS(ON)=5.0mΩ BSC018N04LS G RDS(ON)=1.8mΩ BSC057N03MS G RDS(ON)=5.7mΩ BSC019N04NS G RDS(ON)=1.9mΩ BSZ088N03MS G RDS(ON)=8.8mΩ S308 RDS(ON)=1.0mΩ BSC080N03MS G BSO083N03MS G RDS(ON)=8.0mΩ RDS(ON)=8.3mΩ BSC090N03MS G RDS(ON)=9.0mΩ 10-20 TO-252 DPAK BSC014N03MS G RDS(ON)=1.4mΩ BSO065N03MS G RDS(ON)=6.5mΩ 6-10 RDS(on) @VGS=10V [mΩ] BSZ100N03MS G RDS(ON)=10.0mΩ BSC100N03MS G BSO110N03MS G RDS(ON)=10.0mΩ RDS(ON)=11.0mΩ BSZ130N03MS G RDS(ON)=13.0mΩ BSC120N03MS G BSO130N03MS G RDS(ON)=12.0mΩ RDS(ON)=13.0mΩ >20 BSO220N03MS G RDS(ON)=22.0mΩ 2 x 15 BSO150N03MD G RDS(ON)=15.0mΩ 2 x 22 BSO220N03MD G RDS(ON)=22.0mΩ Low Voltage <2 TO-263 D2PAK IPB022N04L G RDS(ON)=2.2mΩ 2-3 3-4 IPB020N04N G RDS(ON)=2.0mΩ BSC017N04NS G RDS(ON)=1.7mΩ IPP023N04N G RDS(ON)=2.3mΩ IPB023N04N G RDS(ON)=2.3mΩ IPD036N04L G RDS(ON)=3.6mΩ IPC218N04N3 IPC171N04N BSC027N04LS G RDS(ON)=2.7mΩ BSZ023N04LS RDS(ON)=2.3mΩ BSC030N04NS G RDS(ON)=3.0mΩ IPB039N04L G RDS(ON)=3.9mΩ IPP039N04L G RDS(ON)=3.9mΩ BSC035N04LS G RDS(ON)=3.5mΩ BSZ040N04LS G RDS(ON)=4.0mΩ IPB041N04N G RDS(ON)=4.1mΩ IPP041N04N G RDS(ON)=4.1mΩ BSC050N04LS G RDS(ON)=5.0mΩ BSZ042N04NS G RDS(ON)=4.2mΩ IPB052N04N G RDS(ON)=5.2mΩ IPP048N04N G RDS(ON)=4.8mΩ BSC054N04NS G RDS(ON)=5.4mΩ IPP065N04N G RDS(ON)=6.5mΩ BSC059N04LS G RDS(ON)=5.9mΩ IPD038N04N G RDS(ON)=3.8mΩ 4-7 IPB075N04L G RDS(ON)=7.5mΩ 7-8 8-10 IPD088N04L G RDS(ON)=8.8mΩ 10-11 IPD105N04L G RDS(ON)=10.5mΩ BSZ105N04NS G RDS(ON)=10.5mΩ IPD160N04L G RDS(ON)=16.0mΩ BSZ165N04NS G RDS(ON)=16.5mΩ IPB093N04L G RDS(ON)=9.3mΩ BSC093N04LS G RDS(ON)=9.3mΩ BSZ097N04LS G RDS(ON)=9.7mΩ IPD170N04N G RDS(ON)=17.0mΩ Power ICs 13-17 High Voltage S308 Silicon Carbide TO-252 DPAK IGBT RDS(on) @VGS=10V TO-251 / TO-251 SL [mΩ] OptiMOS™ 40V Logic Level / Normal Level Applications OptiMOS™ 30V Logic Level 5V optimized Packages ** Monolithically Integrated Schottky Like Diode 36 37 CanPAK™ CanPAK™ M S TO-262 I2PAK TO-263 D2PAK TO-263 7 Pin TO-220 TO-220 FullPAK Super SO8 IPD025N06N BSB028N06NN3 G IPI020N06N IPB019N06L3 G IPB010N06N IPP020N06N BSC016N06NS RDS(ON)=2.5mΩ RDS(ON)=2.8mΩ RDS(ON)=2.0mΩ RDS(ON)=1.9mΩ RDS(ON)=1.0mΩ RDS(ON)=2.0mΩ RDS(ON)=1.6mΩ IPI024N06N3 G IPB021N06N3 G IPB014N06N IPP024N06N3 G BSC028N06NS RDS(ON)=2.4mΩ RDS(ON)=2.1mΩ RDS(ON)=1.4mΩ RDS(ON)=2.4mΩ RDS(ON)=2.8mΩ IPI029N06N IPB026N06N IPB016N06L3 G IPP029N06N BSC028N06LS3 G RDS(ON)=2.9mΩ RDS(ON)=2.6mΩ RDS(ON)=1.6mΩ RDS(ON)=2.9mΩ RDS(ON)=2.8mΩ <3 S308 (RDS(on) typ.) IPC218N06L3 IPC218N06N3 IPB029N06N3 G IPB017N06N3 G RDS(ON)=2.9mΩ Bare Die RDS(on) @VGS=10V [mΩ] TO-252 DPAK 2-4 4-6 TO-262 I2PAK TO-263 D2PAK TO-263 7 Pin IPI023NE7N3 G RDS(ON)=2.3mΩ IPB020NE7N3 G RDS(ON)=2.0mΩ IPP023NE7N3 G RDS(ON)=2.3mΩ IPI034NE7N3 G RDS(ON)=3.4mΩ IPB031NE7N3 G RDS(ON)=3.1mΩ IPP034NE7N3 G RDS(ON)=3.4mΩ IPI052NE7N3 G RDS(ON)=5.2mΩ IPB049NE7N3 G RDS(ON)=4.9mΩ IPP052NE7N3 G RDS(ON)=5.2mΩ TO-220 FullPAK Super SO8 S308 Bare Die (RDS(on) typ.) BSC036NE7NS3 G RDS(ON)=3.6mΩ IPC302NE7N3 BSC042NE7NS3 G RDS(ON)=4.2mΩ IPP062NE7N3 G RDS(ON)=6.2mΩ 6-12 RDS(ON)=1.7mΩ TO-220 Low Voltage TO-252 DPAK RDS(on) @VGS=10V [mΩ] Applications OptiMOS™ 75V Normal Level OptiMOS™ 60V Logic Level / Normal Level IPB023N06N3 G RDS(ON)=2.3mΩ IPB034N06L3 G IPB034N06N3 G IPP032N06N3 G IPA032N06N3 G BSC031N06NS3 G BSZ042N06NS RDS(ON)=3.4mΩ RDS(ON)=3.4mΩ IPD034N06N3 G IPI037N06L3 G IPB037N06N3 G RDS(ON)=3.4mΩ RDS(ON)=3.7mΩ IPD035N06L3 G IPI040N06N3 G RDS(ON)=3.5mΩ RDS(ON)=4.0mΩ RDS(ON)=4.9mΩ RDS(ON)=4.0mΩ RDS(ON)=3.2mΩ RDS(ON)=3.1mΩ BSC039N06NS RDS(ON)=3.7mΩ RDS(ON)=3.7mΩ RDS(ON)=3.9mΩ IPB049N06L3 G IPP040N06N IPD038N06N3 G IPP040N06N3 G RDS(ON)=3.8mΩ RDS(ON)=4.0mΩ RDS(ON)=4.2mΩ RDS(on) @VGS=10V TO-251 / TO-251 SL [mΩ] TO-252 DPAK CanPAK™ M-Can TO-262 I2PAK TO-263 D2PAK TO-263 7 Pin TO-220 TO-220 FullPAK IPI028N08N3 G IPB025N08N3 G IPP028N08N3 G RDS(ON)=4.8mΩ RDS(ON)=2.8mΩ RDS(ON)=2.5mΩ RDS(ON)=2.8mΩ RDS(ON)=2.8mΩ IPD053N06N IPI060N06N IPB054N06N3 G IPP052N06L3 G IPA057N06N3 G IPI037N08N3 G IPB035N08N3 G IPB030N08N3 G IPP037N08N3 G IPA037N08N3 G RDS(ON)=5.3mΩ RDS(ON)=6.0mΩ RDS(ON)=5.4mΩ RDS(ON)=5.2mΩ RDS(ON)=5.7mΩ RDS(ON)=3.5mΩ RDS(ON)=3.0mΩ 3-4 RDS(ON)=3.7mΩ IPD053N06N3 G IPB057N06N IPP057N06N3 G BSC067N06LS3 G BSZ067N06LS3 G IPD053N08N3 G RDS(ON)=5.3mΩ RDS(ON)=5.7mΩ RDS(ON)=5.7mΩ RDS(ON)=6.7mΩ RDS(ON)=5.3mΩ RDS(ON)=6.7mΩ BSF077N06NT3 G IPB081N06L3 G IPP084N06L3 G IPA093N06N3 G BSC076N06NS3 G BSZ076N06NS3 G RDS(ON)=7.9mΩ RDS(ON)=7.7mΩ RDS(ON)=8.1mΩ RDS(ON)=8.4mΩ RDS(ON)=9.3mΩ RDS(ON)=7.6mΩ RDS(ON)=7.6mΩ IPD088N06N3 G IPB090N06N3 G IPP093N06N3 G BSC100N06LS3 G BSZ100N06LS3 G RDS(ON)=8.8mΩ RDS(ON)=9.0mΩ RDS(ON)=9.3mΩ RDS(ON)=10.0mΩ IPD220N06L3 G IPB230N06L3 G IPP230N06L3 G BSC110N06NS3 G BSZ110N06NS3 G RDS(ON)=22.0mΩ RDS(ON)=23.0mΩ RDS(ON)=23.0mΩ RDS(ON)=11.0mΩ IPB260N06N3 G IPP260N06N3 G RDS(ON)=25.0mΩ RDS(ON)=26.0mΩ RDS(ON)=26.0mΩ (RDS(on) typ.) 4-6 IPA028N08N3 G RDS(ON)=3.7mΩ RDS(ON)=3.7mΩ BSB044N08NN3 G IPI057N08N3 G IPB054N08N3 G IPP057N08N3 G IPA057N08N3 G BSC047N08NS3 G RDS(ON)=4.4mΩ RDS(ON)=5.4mΩ RDS(ON)=5.7mΩ RDS(ON)=5.7mΩ RDS(ON)=4.7mΩ RDS(ON)=5.7mΩ BSC057N08NS3 G RDS(ON)=5.7mΩ IPD079N06L3 G IPD250N06N3 G Bare Die IPC302N08N3 RDS(ON)=6.0mΩ 11-30 S308 RDS(ON)=1.9mΩ 1-3 IPP060N06N 7-10 Super SO8 IPB019N08N3 G IPD048N06L3 G 5-7 OptiMOS™ 80V Normal Level 1) Silicon Carbide RDS(ON)=3.2mΩ IPP037N06L3 G RDS(ON)=10.0mΩ RDS(ON)=11.0mΩ IPI070N08N3 G 6-7 30-40 IPP070N08N3 G RDS(ON)=7.0mΩ RDS(ON)=6.7mΩ RDS(ON)=7.0mΩ IPD096N08N3 G IPI100N08N3 G IPB097N08N3 G IPP100N08N3 G IPA100N08N3 G RDS(ON)=9.6mΩ RDS(ON)=10.0mΩ RDS(ON)=9.7mΩ RDS(ON)=9.7mΩ RDS(ON)=10.0mΩ IPU135N08N3 G IPD135N08N3 G IPI139N08N3 G IPB136N08N3 G IPP139N08N3 G BSC123N08NS3 G BSZ123N08NS3 G RDS(ON)=13.5mΩ RDS(ON)=13.5mΩ RDS(ON)=13.9mΩ RDS(ON)=13.6mΩ RDS(ON)=13.9mΩ RDS(ON)=12.3mΩ 7-11 11-20 IPB067N08N3 G High Voltage IPI032N06N3 G RDS(ON)=3.2mΩ RDS(ON)=12.3mΩ BSC340N08NS3 G BSZ340N08NS3 G RDS(ON)=34.0mΩ IGBT 3-5 IPD031N06L3 G RDS(ON)=3.1mΩ RDS(ON)=34.0mΩ IPD350N06L G RDS(ON)=35.0mΩ 30-50 IPD400N06N G RDS(ON)=40.0mΩ IPD640N06L G RDS(ON = 64.0mΩ IPD800N06N G Power ICs 50-80 RDS(ON) = 80.0mΩ 6V rated (RDS(on) also specified @ VGS=6V) Packages 1) 38 39 TO-263 D2PAK TO-263 7 Pin TO-220 TO-220 FullPAK Super SO8 S308 (RDS(on) typ.) IPI030N10N3 G IPB027N10N3 G IPB025N10N3 G IPP030N10N3 G IPA030N10N3 G RDS(ON)=3.0mΩ RDS(ON)=2.7mΩ RDS(ON)=2.5mΩ RDS(ON)=3.0mΩ RDS(ON)=3.0mΩ <3 IPC302N10N3 IPC26N10NR IPB039N10N3 G 3-4 6-8 RDS(on) @VGS=10V TO-251 / TO-252 CanPAK™ CanPAK™ TO-262 TO-251 SL DPAK M-Can S-Can I2PAK [mΩ] TO-263 7 Pin TO-220 TO-220 FullPAK Super SO8 4-6 IPI045N10N3 G IPB042N10N3 G IPP045N10N3 G IPA045N10N3 G BSC046N10NS3 G IPP08CN10L G BSC082N10LS G RDS(ON)=4.5mΩ RDS(ON)=8.0mΩ RDS(ON)=8.2mΩ RDS(ON)=4.6mΩ IPD068N10N3 G IPI072N10N3 G BSC060N10NS3 G RDS(ON)=6.8mΩ RDS(ON)=7.2mΩ RDS(ON)=6.0mΩ 8-12 BSC105N10LSF G RDS(ON)=10.5mΩ IPP072N10N3 G BSC070N10NS3 G IPP12CN10L G RDS(ON)=7.0mΩ RDS(ON)=12.0mΩ IPI086N10N3 G IPB083N10N3 G IPA086N10N3 G RDS(ON)=8.6mΩ RDS(ON)=8.6mΩ RDS(ON)=8.3mΩ BSC123N10LS G 12-18 IPP086N10N3 G 8-12 IPS12CN10L G RDS(ON)=11.8mΩ RDS(ON)=7.2mΩ RDS(ON)=11.8mΩ RDS(ON)=8.2mΩ (RDS(on) typ.) RDS(ON)=6.2mΩ RDS(ON)=4.5mΩ RDS(ON)=4.5mΩ Bare Die IPP06CN10L G RDS(ON)=5.6mΩ RDS(ON)=4.2mΩ S308 RDS(ON)=5.1mΩ BSB056N10NN3 G IPS118N10N G IPD082N10N3 G RDS(ON)=8.6mΩ BSC109N10NS3 G RDS(ON)=12.3mΩ IPP16CN10L G BSC159N10LSF G RDS(ON)=15.7mΩ RDS(ON)=15.9mΩ BSC205N10LS RDS(ON)=10.9mΩ 12-18 TO-263 D2PAK IPP05CN10L G 6-8 RDS(ON)=3.9mΩ 4-6 Bare Die High Voltage RDS(on) @VGS=10V TO-251 / TO-252 CanPAK™ CanPAK™ TO-262 TO-251 SL DPAK M-Can S-Can I2PAK [mΩ] Applications OptiMOS™ 100V Logic Level Low Voltage OptiMOS™ 100V Normal Level IPD122N10N3 G BSF134N10NJ3 G IPI126N10N3 G IPB123N10N3 G IPP126N10N3 G IPA126N10N3 G BSZ160N10NS3 G RDS(ON)=12.2mΩ RDS(ON)=13.4mΩ RDS(ON)=12.6mΩ RDS(ON)=12.3mΩ RDS(ON)=12.6mΩ RDS(ON)=12.6mΩ RDS(ON)=16.0mΩ 20-40 RDS(ON)=20.5mΩ BSC265N10LSF G RDS(ON)=26.5mΩ BSC160N10NS3 G 18-20 IPI180N10N3 G IPP180N10N3 G IPA180N10N3 G RDS(ON)=18.0mΩ RDS(ON)=18.0mΩ RDS(ON)=18.0mΩ RDS(ON)=18.0mΩ Silicon Carbide RDS(ON)=16.0mΩ IPD180N10N3 G IPD25CN10N G** RDS(ON)=25.0mΩ 20-40 IPD33CN10N G** RDS(ON)=33.0mΩ BSC440N10NS3 G BSZ440N10NS3 G RDS(ON)=44.0mΩ RDS(ON)=44.0mΩ 40-80 IPD78CN10N G** RDS(ON)=78.0mΩ BSC750N10ND G 2 x 75 Power ICs IGBT RDS(ON)=75.0mΩ Packages ** not 6V rated 40 41 IPB038N12N3 G RDS(ON)=3.8mΩ <4 4-5 7-8 10-13 TO-263 D2PAK IPS110N12N3 G RDS(ON)=11.0mΩ TO-263 7 Pin Super SO8 S308 Bare Die (RDS(on) typ.) IPB036N12N3 G RDS(ON)=3.6mΩ IPP041N12N3 G RDS(ON)=4.1mΩ IPI048N12N3 G RDS(ON=4.8mΩ IPP048N12N3 G RDS(ON)=4.8mΩ IPI076N12N3 G RDS(ON)=7.6mΩ IPP076N12N3 G RDS(ON)=7.6mΩ IPB144N12N3 G RDS(ON)=14.4mΩ TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-263 7 Pin TO-220 TO-220 FullPAK Super SO8 S308 BSC077N12NS3 G RDS(ON)=7.7mΩ IPP147N12N3 G RDS(ON)=14.7mΩ 30-40 BSC240N12NS3 G BSZ240N12NS3 G RDS(ON)=24.0mΩ RDS(ON)=24.0mΩ 20-25 IPI110N20N3 G RDS(ON)=11.0mΩ IPD320N20N3 G RDS(ON)=32.0mΩ IPI320N20N3 G RDS(ON)=32.0mΩ IPB107N20N3 G RDS(ON)=10.7mΩ IPP110N20N3 G RDS(ON)=11.0mΩ (RDS(on) typ.) IPB107N20NA *** RDS(ON)=10.7mΩ IPP110N20NA *** IPB320N20N3 G RDS(ON)=32.0mΩ IPP320N20N3 G RDS(ON)=32.0mΩ IPC302N20N3 RDS(ON)=11.0mΩ BSC320N20NS3 G RDS(ON)=32.0mΩ BSC500N20NS3G 40-50 BSC190N12NS3 G RDS(ON)=19.0mΩ Bare Die IPC300N20N3 10-20 IPP114N12N3 G RDS(ON)=11.4mΩ IPI147N12N3 G RDS(ON)=14.7mΩ RDS(on) @VGS=10V [mΩ] IPC302N12N3 IPC26N12N IPI041N12N3 G RDS(ON)=4.1mΩ IPD110N12N3 G RDS(ON)=11.0mΩ 13-20 TO-220 80-100 BSC900N20NS3 G BSZ900N20NS3 G RDS(ON)=90.0mΩ RDS(ON)=90.0mΩ 100-200 BSC12DN20NS3 G BSZ12DN20NS3 G RDS(ON)=125.0mΩ RDS(ON)=125.0mΩ 200-300 BSC22DN20NS3 G BSZ22DN20NS3 G RDS(ON)=225.0mΩ RDS(ON)=225.0mΩ OptiMOS™ 150V Normal Level 1) CanPAK™ M-Can TO-262 I2PAK TO-263 D2PAK 7-12 30-60 TO-220 TO-220 FullPAK Super SO8 S308 IPC302N15N3 IPI075N15N3 G IPB072N15N3 G RDS(ON)=7.5mΩ RDS(ON)=7.2mΩ IPP075N15N3 G IPA075N15N3 G RDS(ON)=7.5mΩ RDS(ON)=6.5mΩ IPI111N15N3 G IPB108N15N3 G RDS(ON)=11.1mΩ RDS(ON)=10.8mΩ IPP111N15N3 G IPA105N15N3 G RDS(ON)=11.1mΩ RDS(ON)=10.5mΩ IPD200N15N3 G BSB165N15NZ3 G IPI200N15N3 G IPB200N15N3 G RDS(ON)=20.0mΩ RDS(ON)=16.5mΩ RDS(ON)=20.0mΩ RDS(ON)=20.0mΩ IPP200N15N3 G RDS(ON)=20.0mΩ IPI530N15N3 G IPB530N15N3 G RDS(ON)=53.0mΩ RDS(ON)=53.0mΩ IPP530N15N3 G RDS(ON)=53.0mΩ RDS(on) @VGS=10V [mΩ] TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-263 7 Pin TO-220 TO-220 FullPAK Super SO8 S308 BSC190N15NS3 G RDS(ON)=19.0mΩ 60-70 Bare Die (RDS(on) typ.) IPC302N25N3A *** 20-30 BSC360N15NS3 G RDS(ON)=36.0mΩ RDS(ON)=53.0mΩ OptiMOS™ 250V Normal Level 10-20 BSB280N15NZ3 G RDS(ON)=28.0mΩ IPD530N15N3 G Bare Die (RDS(on) typ.) IPB065N15N3 G RDS(ON)=6.5mΩ 4-7 16-30 TO-263 7 Pin IPD600N25N3 G RDS(ON)=60.0mΩ IPI200N25N3 G RDS(ON)=20.0mΩ IPB200N25N3 G RDS(ON)=20.0mΩ IPP200N25N3 G RDS(ON)=20.0mΩ IPI600N25N3 G RDS(ON)=60.0mΩ IPB600N25N3 G RDS(ON)=60.0mΩ IPP600N25N3 G RDS(ON)=60.0mΩ BSC600N25NS3 G RDS(ON)=60.0mΩ 100-200 BSC16DN25NS3 G BSZ16DN25NS3 G RDS(ON)=165.0mΩ RDS(ON)=165.0mΩ 400-500 BSZ42DN25NS3 G RDS(ON)=425.0mΩ IGBT TO-252 DPAK RDS(on) @VGS=10V [mΩ] Applications TO-262 I2PAK Low Voltage TO-252 DPAK Silicon Carbide RDS(on) @VGS=10V TO-251 / TO-251 SL [mΩ] OptiMOS™ 200V Normal Level High Voltage OptiMOS™ 120V Normal Level BSC520N15NS3 G BSZ520N15NS3 G RDS(ON)=52.0mΩ RDS(ON)=52.0mΩ BSZ900N15NS3 G 80-90 Power ICs RDS(ON)=90.0mΩ 8V rated (RDS(on) also specified @ VGS=8V) *** part qualified for Automotive Packages 1) 42 43 TSOP6 SOT-89 SC-59 SOT-23 SOT-323 SOT-363 Voltage BSP317P - 250 -20 / 20 4.0Ω, -0.43A, LL BSP92P 12.0Ω, -0.26A, LL BSS192P 12.0Ω, -0.19A, LL BSR92P 11.0Ω, -0.14A, LL SOT-89 SC-59 SOT-23 SOT-323 SOT-363 BSL215C BSD235C N: 140.0mΩ, 1.5A, SLL N: 0.35Ω, 0.95A, SLL P: 150.0mΩ, -1.5A, SLL P: 1.2Ω, -0.53A, SLL BSR316P 1.8Ω, -0.36A, LL BSS83P 2.0Ω, -0.33A, LL BSP170P 300.0mΩ, -1.9A, NL BSS84P 8.0Ω, -0.17A, LL -30 / 30 P: 150.0mΩ, -1.5A, LL BSL308C BSD356PC * N:57.0mΩ, A, LL N:350.0mΩ, 0.95A, LL P:80.0mΩ, A, LL, P:~560.0mΩ, ~0.73A, LL -60 / 60 BSS84PW 8.0Ω, -0.15, LL High Voltage BSP613P 130.0mΩ, 2.9A, NL N: 160.0mΩ, 1.4A, LL BSP171P 300.0mΩ, -1.9A, LL BSP315P 800.0mΩ, -1.17A, LL BSR315P 800.0mΩ, -0.62A, LL BSL303SPE * ~30.0mΩ, ~-6.6A, LL BSR303PE * ~30.0mΩ, ~-3.3A, LL BSP304PE * ~40.0mΩ, ~-5.5A, LL BSL305SPE * ~50.0mΩ, ~-5.3A, LL BSR305PE * ~50.0mΩ, ~-2.7A, LL BSP306PE * ~60.0mΩ, ~-4.5A, LL BSL307SP 43.0mΩ, -5.5A, LL BSS308PE 80.0mΩ, -2.1A, LL, ESD BSL308PE 80.0mΩ, -2.1A, LL, dual, ESD BSS314PE 140.0mΩ, -1.5A, LL, ESD BSL314PE 140.0mΩ, -1.5A, LL, ESD, dual BSS315P 150.0mΩ, -1.5A, LL - 30 - 20 Silicon Carbide P-Channel MOSFETs - 60 Complementary BSP322P 800.0mΩ, -1.0A, LL BSP316P 1.8Ω, -0.68A, LL TSOP6 BSL316C BSP321P 900.0mΩ, -0.98A, NL - 100 SOT-223 BSD314SPE 140.0mΩ, -1.5A, LL, ESD BSL315P 150.0mΩ, -1.5A, LL, dual BSS356PWE * BSD356PE * ~560.0mΩ, ~0.73A, LL ~560.0mΩ, ~0.73A, LL BSL207SP 41.0mΩ, -6A, SLL BSS209PW BSV236SP 550.0mΩ, -0.58A, SLL 175.0mΩ, -1.5A, SLL BSL211SP 67.0mΩ, -4.7A, SLL BSS223PW 1.2Ω, -0.39A, SLL BSD223P 1.2Ω, -0.39A, SLL, dual BSS215P 150.0mΩ, -1.5A, SLL Power ICs BSL215P 150.0mΩ, -1.5A, SLL, dual Low Voltage SOT-223 IGBT Voltage Small Signal Applications Small Signal Packages * in developement 44 45 SOT-323 SOT-363 TSOP6 SOT-89 SC-59 SOT-23 BSR802N BSP373 BSL373SN* BSS169 22.0mΩ, 7.5A, ULL 23.0mΩ, 3.7A, ULL 300.0mΩ, 1.7A, NL 230.0mΩ, 2.0A, NL 12.0Ω, 0.09A, depl. BSL202SN BSR202N BSP373N* BSL372SN* 22.0mΩ, 7.5A, SLL 21.0mΩ, 3.8A, SLL 230.0mΩ, 2.0A, NL 220.0mΩ, 2.0A, LL BSP372 310.0mΩ, 1.7A, LL BSL296SN* 460.0mΩ, 1.4A, LL BSL806N BSS806N BSD816SN 57.0mΩ, 2.3A, ULL 57.0mΩ, 2.3A, ULL 160.0mΩ, 1.4A, ULL BSL205N BSS205N BSD214SN 50.0mΩ, 2.5A, SLL, dual 50.0mΩ, 2.5A, SLL 140.0mΩ, 1.5A, SLL BSL207N BSS816NW BSD840N 70.0mΩ, 2.1A, SLL, dual 160.0mΩ, 1.4A, ULL 400.0mΩ, 0.88A, ULL, dual BSL214N BSS214N BSS214NW BSD235N 140.0mΩ, 1.5A, SLL, dual 140.0mΩ, 1.5A, SLL 140.0mΩ, 1.5A, SLL 350.0mΩ, 0.95A, SLL, dual BSL302SN BSR302N 25.0mΩ, 7.1A, LL 23.0mΩ, 3.7A, LL 100 6.0Ω, 0.19A, LL BSP296 BSP123 BSS123 BSP123N 57.0mΩ, 2.3A, LL, dual 160.0mΩ, 1.4A, LL 160.0mΩ, 1.4A, LL BSS670S2L 650.0mΩ, 0.54A, LL BSP318S BSL606SN* BSS606N BSR606N * BSS138N BSS138W 90.0mΩ, 2.6A, LL 60.0mΩ, 4.5A, LL 60.0mΩ, 2.3A, LL 60.0mΩ, 2.3A, LL 3.5Ω, 0.23A, LL 3.5Ω, 0.28A, LL BSP320S BSS7728N 120.0mΩ, 2.9A, NL 5.0Ω, 0.2A, LL BSP295 SN7002N SN7002W 300.0mΩ, 1.8A, LL 5.0Ω, 0.2A, LL 5.0Ω, 0.23A, LL BSS123N 6.0Ω, 0.19A, LL BSP297 200 1.8Ω, 0.66A, LL BSP149 3.5Ω,0.14 A, depl. 240 BSP88 BSS87 BSS131 6.0Ω, 0.35A, 2.8V rated 6.0Ω, 0.26A, LL 14.0Ω, 0.1A, LL BSP89 6.0Ω, 0.35A, LL BSP129 2N7002 2N7002DW 3.0Ω, 0.3A, LL 3.0Ω, 0.3A, LL, dual 6.0Ω, 0.05A, depl. BSS139* 250 30.0Ω, 0.03A, depl. BSP298 8.0Ω, 0.13A, depl. 150.0mΩ, 2.5A, LL BSS119N 230mΩ, 1.8A, LL 600.0Ω, 1.2A, LL 57.0mΩ, 2.3A, LL BSD316SN ~160.0mΩ, 2.3A, LL BSP372N* 6.0Ω, 0.37A, LL BSS316N BSL716N * BSS119 BSP296N* BSS306N BSL306N BSP718N * SOT-323 700.0mΩ, 1.1A, LL BSS159N 75 SOT-223 Voltage BSL802SN 55 60 SOT-23 Applications SC-59 High Voltage 30 SOT-89 Silicon Carbide N-Channel MOSFETs 20 TSOP6 400 3.0Ω, 0.5A, NL BSP324 25.0Ω, 0.17A, LL 500 600 BSP299 BSS127 4.0Ω, 0.4A, NL 500.0Ω, 0.023A, LL BSP125 BSS225 45.0Ω, 0.12A, LL 45.0Ω, 0.09A, LL IGBT SOT-223 N-Channel MOSFETs Voltage Small Signal Low Voltage Small Signal BSP135 60.0Ω, 0.02A, depl. BSP300 20.0Ω, 0.19A, NL NL = Normal Level LL = Logic Level SLL = Super Logic Level ULL = Ultra Logic Level to be used from VGS 10V 4.5V 2.5V 1.8V Power ICs 800 Packages * in developement 46 47 Naming System P-Channel MOSFETs TO-220 RDS(on) @ VGS=10V [mΩ] TO-252 (DPAK) TO-263 (D2PAK) BSC030P03NS3 G 3 IPD042P03L3 G 4,2 SPD50P03L G ** IPD068P03L3 G 5-7 BSC060P03NS3E G BSO080P03NS3 G BSO080P03NS3E G BSO080P03S BSO301SP BSO130P03S 13 03 L S X BSZ180P03NS3 G BSO200P03S BSO303SP BSO303P (dual) 20 21 SPP80P06P SPB80P06 G SPD30P06P G 75 SPP18P06P SPD18P06P G SPB18P06P G BSO613SPV G E G SPP08P06P SPD08P06P G SPP15P10PL G SPD15P10PL G SPP15P10P G SPD15P10P G SPB08P06P G SPD04P10PL G 850 RoHS compliant Low Voltage Features F = fast switching R = integrated gate resistor E = ESD protection C = clean switching e.g. IPD04xP03LE G Technology Generation I = Monolithic integrated Schottky like diode Package Options SO-8 / SuperSO8 / S3O8 S = Single Chip only valid for SO-8, SuperSO8, S3O8 D = Dual Chip only valid for SO-8, SuperSO8, S3O8 RDS(ON) [mΩ] Multiplied by 10, if last digit is not defined, substitution by C, e.g. 07C = 7mΩ class. For chip products chip area in mm2 multiplied by 10 CanPAK Q = SQ or MQ footprint X = SX or MX footprint T = ST or MT footprint P = MP footprint N = N-Channel P = P-Channel C = Complementary Breakdown Voltage divided by 10 E = Extended, +5V, e.g. E2 = 25V SPD09P06PL G 250 BSC200P03LS G Package Type BSB = CanPAK™ (M Can) BSC = SuperSO8 BSF = CanPAK™ (S Can) BSO = SO-8 BSZ = S3O8 IPA = FullPAK IPB = D2PAK IPC = Chip Product IPD = DPAK IPI = I2PAK IPP = TO-220 IPS = IPAK Short Leads BSC130P03LS G 18 - 100V BSZ086P03NS3 G BSZ086P03NS3E G BSZ120P03NS3 G 1,2 Ω D²PAK X = xtra drain lead Level N = Normal Level M = Logic Level 5V opt. L = Logic Level K = Super Logic Level J = Ultra Logic Level (NL) 10.0 (LL) 4.5 (ELL) 4.5 (SLL) 2.5 (ULL) 1.8 SPD04P10P G 1Ω Complem. BSC080P03LS G BSC084P03NS3 G BSC084P03NS3E G 12 240 N BS0612CV G -60/ 11-30 60V Power ICs P-Channel MOSFETs ~8 210 014 High Voltage BSO211P (dual) 67 300 BSC Silicon Carbide BSO207P (dual) 45 - 60V 130 CanPAK IGBT 30 23 S3O8 BSO203SP BSO203P (dual) BSO204P (dual) 21 - 30V SuperSO8 BSO201SP 7 - 20V SO8 Applications OptiMOSTM BS0615C G Packages ** 5-leg 48 49 BSC N 0901 Applications New OptiMOSTM 30V X Package Type Consecutively Number without any correlation to product specification Low Voltage D = Dual E = ESD I = Monolithic integrated Schottky like diode S = Single Channels N = N-Channel P = P-Channel Enables 96% Efficiency Level in Server Power Supply Y J2 Z Addional Features E = ESD protected MOSFET 3 digits product identifier meaning dependent on product generation Only present in following case W = to distinguish SOT-323 from SOT-23 Only present in following case S = Single (only for packages which are also used for multichip products) Polarity N = N-channel P = P-channel C = Complementary (N-Ch + P-Ch) They are also a perfect choice for a broad range of industrial applications like motor control, solar micro inverter and fast switching DC/DC converter. Key features and benefits of new OptiMOS™ 40V/60V Industry’s first 1mΩ 40V and 1.6mΩ 60V product in SuperSO8 35% lower RDS(on) and 45% lower FOM than alternative devices Highest system efficiency and power density Monolithically integrated Schottky like diode for highest efficiency Power ICs “X” indicates the Package D = SOT-363 P = SOT-223 R = SC59 S = SOT-89, SOT-23, SOT-323 L = TSOP-6 Infineon’s new OptiMOS™ 40V and 60V family is optimized for synchronous rectification in Switched Mode Power Supplies (SMPS) such as in servers and desktop PCs. These devices set highest standards in power density and efficiency and reduce system costs at the same time. Silicon Carbide J1 IGBT Small Signal BSX High Voltage New OptiMOS™ 40V and 60V Packages For further information please visit our website: [ www.infineon.com/newoptimos ] 50 51 CoolMOS™ CoolMOSTM Gate On state: Reduction of resistance of epitaxial layer by high doped n-columns Higher doping level in n-type drift region results in lower RDS(on) n+ nepi p+ p Blocking state: Compensation of additional charge by adjacent p-columns Half of active chip area is covered by p-columns During blocking state the p-column compensates the charge of the adjacent n-column resulting in high breakdown voltage at an area specific on-resistance below the silicon limit Standard MOSFET Source Gate n+ p+ nepi Drain C3 series: Third series of CoolMOS™, market entry in 2001 The "working horse" of the portfolio, fast switching, symmetrical rise/fall time @10 V Vgs, Vth 3 V, gfs high, Rg very low Design-in into all CoolMOS™ segments CFD series: Fourth series of CoolMOS™, market entry in 2004 Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V, gfs high, Rg low Specific for phase-shift ZVS and DC/AC power applications Source CoolMOS™ technology n+ Applications CP series: Fifth series of CoolMOS™, market entry in 2005 Ultra low RDS(on), ultra low gate charge, very fast switching Vth 3 V, gfs very high, internal Rg very low S5 series: First series of CoolMOS™, market entry in 1998 Slow switching, close to converter MOSFET, Vth 4.5 V, gfs low, Rg high Design-in in high power SMPS only CE series: Cost optimized platform for price sensitive applications such as PC Silverbox, Consumer and Lighting Applicable in PFC, in LLC topologies in resonant switching and in TTF topologies in Hard Switching in PWM stage Low Voltage Benefits Improved efficiency More efficient, more compact, lighter and cooler Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness Since the development of the innovative CoolMOS™ technology we help applications to meet the standby power and Energy Efficiency regulations. CoolMOS™ is used for example in lighting applications where Energy Efficiency is more than ever a pre-condition as well as in solar inverters of market leaders. C6 / E6 series: Sixth series of CoolMOS™, market entry 2009 Is the successor of C3 CFD2 series: Seventh series of CoolMOS™, Market entry 2011 First 650V superjunction device, with Fast Body Diode Is the successor of CFD, suitable for resonant topologies High Voltage Features Offers a significant reduction of conduction and switching losses Enables high power density and efficiency for superior power conversion systems Best-in-class price/performance ratio CoolMOS™ – a history CFDA series: First automotive qualified CoolMOS™ technology with integrated Fast Body Diode Optimized for resonant topologies in the automotive field used e.g. for battery charging and DC/DC converters Silicon Carbide The revolutionary CoolMOS™ power family sets new standards in the field of Energy Efficiency. As technology leader in high voltage MOSFETs, CoolMOS™ offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. Especially the latest, state-of-the-art generation of high voltage power MOSFETs made it possible that AC/DC power supplies are more efficient, more compact, lighter and cooler than ever before. This success was achieved by offering the lowest on-state resistance per package outline, the fastest switching speed and the lowest gate driver requirements of high voltage MOSFETs commercially available. Adapter PC Silverbox Server Telecom Solar UPS HID lighting Automotive 900V C3 800V C3 650V C3 650V C7 600V CFD 600V C3 600V CP 500V C3 2004 2006 650V CFDA 650V C6 / E6 500V CP 2005 650V CFD2 2007 2008 2009 2010 productive 500V CE 2011 2012 under development Packages 2003 600V C6 / E6 Power ICs IGBT Main Applications 52 53 This Fast Body Diode is the key for addressing resonant switching topologies resulting in lower switching losses due to the low gate charge. The softer commutation behavior and therefore reduced EMI appearance gives the CoolMOS™ CFDA series a clear advantage in comparison with competitor parts. Furthermore, limited voltage overshoot during hard commutation of the body diode enables easier implementation of layout and design. The broad 650V CoolMOS™ CFDA portfolio provides all benefits of fast switching superjunction MOSFETs fulfilling the enhanced reliability requirements for automotive applications realized with special screening measures in Front End and Back End as well as the qualification according to AEC Q101. Therefore, the new 650V CoolMOS™ CFDA technology is the best choice for resonant switching topologies in Automotive applications. TO-252 DPAK TO-263 D2PAK TO-220 660* IPD65R660CFDA IPB65R660CFDA IPP65R660CFDA 420* IPD65R420CFDA Applications Benefits Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability Features First 650V Automotive qualified technology with integrated Fast Body Diode on the market Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt Low gate charge value Qg Low Qrr at repetitive commutation on body diode & low Qoss Reduced turn on and turn off delay times Compliant to AEC Q101 standard Low Voltage With the new 650V CoolMOS™ CFDA, Infineon launches its second generation of market leading Automotive qualified high voltage CoolMOS™ MOSFET’s. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS™ CFDA series provides now also an integrated Fast Body Diode. Limited voltage overshoot by CoolMOS™ CFDA during hard commutation of conducted body diode TO-247 T=25°C; If=20A; Rg, d=5.6Ω; Ugs=13V 800 676V 310* IPB65R310CFDA IPP65R310CFDA 190* IPB65R190CFDA IPP65R190CFDA IPW65R190CFDA 150* IPB65R150CFDA IPP65R150CFDA IPW65R150CFDA 110* IPB65R110CFDA IPP65R110CFDA IPW65R110CFDA 80* IPW65R080CFDA 48* IPW65R048CFDA IPW65R080CFDA Silicon Carbide 600 U[V] RDS(on) [mΩ] Applications Unidirectional and bidirectional DC/DC converter Battery charger HID Lighting High Voltage 650V CoolMOS™ CFDA Comp2 600V 452V 400 200 Less Voltage Overshoot 0 200 t[µs] 300 400 500 Limited voltage overshoot due to soft commutation behavior of CFDA contributes to higher reliability Significantly less voltage overshoot of CFDA compared to competition enables easier design in Power ICs 100 IGBT 0 Packages * in development 54 55 3000 9 1400 15 950 22 600 32 380 49 280 66 190 95 110 170 70 290 TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK TO-247 ID RDS(on) Qg [A] [mΩ] [nC] SPD02N50C3 SPD03N50C3 SPD04N50C3 SPD08N50C3 SPB04N50C3 SPI08N50C3 SPP04N50C3 SPA04N50C3 SPP08N50C3 SPA08N50C3 SPI12N50C3 SPB12N50C3 SPP12N50C3 SPA12N50C3 SPW12N50C3 SPI16N50C3 SPB16N50C3 SPP16N50C3 SPA16N50C3 SPW16N50C3 SPI21N50C3 SPB21N50C3 SPP21N50C3 SPA21N50C3 SPW21N50C3 6000 3000 1400 950 750 600 380 280 190 160 100 70 3.9 9.5 13 19 24 21 45 63 87 104.9 150 252 TO-252 DPAK 21 45 63 87 255 TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK SPI07N65C3 SPP07N65C3 SPA07N65C3 SPI11N65C3 SPP11N65C3 SPA11N65C3 SPI15N65C3 SPP15N65C3 SPA15N65C3 SPI20N65C3 SPP20N65C3 SPA20N65C3 TO-247 SPW47N65C3 TO-251 IPAK ID RDS(on) Qg [A] [mΩ] [nC] TO-251 IPAK SL short leads TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK SPU01N60C3 SPS01N60C3 SPD01N60C3 SPU02N60C3 SPS02N60C3 SPD02N60C3 SPB02N60C3 SPP02N60C3 SPU03N60C3 SPS03N60C3 SPD03N60C3 SPB03N60C3 SPP03N60C3 SPA03N60C3 SPU04N60C3 SPS04N60C3 SPD04N60C3 SPB04N60C3 SPP04N60C3 SPA04N60C3 SPD06N60C3 SPU07N60C3 CoolMOS™ C3 800V SPD07N60C3 SPI07N60C3 SPB07N60C3 SPI11N60C3 SPB11N60C3 SPI15N60C3 SPI20N60C3 SPB20N60C3 SPP06N60C3 SPA06N60C3 SPP07N60C3 SPA07N60C3 TO-247 SPP11N60C3 SPA11N60C3 SPW11N60C3 SPP15N60C3 SPA15N60C3 SPW15N60C3 SPP20N60C3 SPA20N60C3 SPW20N60C3 SPP24N60C3 2 2700 4 6 8 11 17 55 1300 20 900 27 650 40 450 50 290 91 85 288 SPW47N60C3 TO-251 IPAK SL short leads 9 TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK TO-247 SPD02N80C3 SPP02N80C3 SPA02N80C3 SPD04N80C3 SPP04N80C3 SPA04N80C3 SPD06N80C3 SPP06N80C3 SPA06N80C3 SPP08N80C3 SPA08N80C3 SPB11N80C3 SPP11N80C3 SPA11N80C3 SPW11N80C3 SPB17N80C3 SPP17N80C3 SPA17N80C3 SPW17N80C3 SPI08N80C3 SPW55N80C3 CoolMOS™ C3 900V SPW24N60C3 SPW35N60C3 TO-251 IPAK High Voltage SPW52N50C3 Silicon Carbide 0.8 1.8 3.2 4.5 6.2 7.3 11 15 20.7 24.3 34.6 47 600 380 280 190 70 TO-251 IPAK SL short leads SPW32N50C3 CoolMOS™ C3 600V ID RDS(on) Qg [A] [mΩ] [nC] 7.3 11 15 20.7 47 TO-251 IPAK Applications TO-251 IPAK SL short leads ID RDS(on) Qg [A] [mΩ] [nC] 5.1 1200 29 TO-251 IPAK SL short leads TO-252 DPAK IPD90R1K2C3 TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK TO-247 IPI90R1K2C3 IPP90R1K2C3 IPA90R1K2C3 IPW90R1K2C3 IPI90R1K0C3 IPP90R1K0C3 IPA90R1K0C3 IPW90R1K0C3 IPI90R800C3 IPP90R800C3 IPA90R800C3 IPW90R800C3 IPI90R500C3 IPP90R500C3 IPA90R500C3 IPW90R500C3 IPP90R340C3 IPA90R340C3 IPW90R340C3 IPI90R340C3 IPB90R340C3 IPW90R120C3 Packages 5.7 1000 34 6.9 800 42 11 500 68 15 340 93 36 120 260 TO-251 IPAK IGBT 1.8 3.2 4.5 7.6 11.6 16 21 32 52 TO-251 IPAK Power ICs ID RDS(on) Qg [A] [mΩ] [nC] CoolMOS™ C3 650V Low Voltage CoolMOS™ C3 500V 56 57 IPD50R520CP IPD50R399CP TO-220 TO-220 FullPAK TO-247 ID RDS(on) Qg [A] [mΩ] [nC] IPP50R520CP IPA50R520CP IPI50R399CP IPP50R399CP IPA50R399CP IPW50R399CP IPI50R350CP IPP50R350CP IPA50R350CP IPW50R350CP ID RDS(on) Qg [A] [mΩ] [nC] 1.5 3 4.3 5 6 7.6 9.8 13 18.5 3000 1400 950 800 650 500 380 280 190 TO-251 IPAK TO-251 IPAK SL short leads IPI50R299CP IPB50R299CP IPP50R299CP IPA50R299CP IPW50R299CP IPI50R250CP IPB50R250CP IPP50R250CP IPA50R250CP IPW50R250CP IPI50R199CP IPB50R199CP IPP50R199CP IPA50R199CP IPW50R199CP IPI50R140CP IPB50R140CP IPP50R140CP IPA50R140CP IPW50R140CP tbd tbd tbd tbd tbd tbd tbd tbd tbd TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK TO-247 IPD50R3k0CE IPD50R1k4CE IPD50R950CE IPA50R950CE IPD50R800CE IPA50R800CE IPD50R650CE 2.4 3.2 4.4 7.3 8.1 10.6 13.8 20.2 23.8 30 38 57.7 53.5 77.5 2000 1400 950 600 520 380 280 190 160 125 99 74 70 41 600 520 385 299 250 199 165 125 99 75 45 21 24 17 IPL60R385CP 22 IPL60R299CP 26 32 IPL60R199CP 39 53 60 86 150 TO-251 IPAK TO-251 IPAK SL short leads TO-263 D2PAK TO-220 TO-220 FullPAK TO-247 IPU60R2K0C6 IPD60R2K0C6 IPD60R1K4C6 IPP60R1K4C6 IPD60R950C6 IPB60R950C6 IPP60R950C6 IPA60R950C6 IPD60R600C6 IPB60R600C6 IPP60R600C6 IPA60R600C6 IPP60R520C6 IPA60R520C6 IPD60R520C6 IPD60R380C6 IPI60R380C6 IPB60R380C6 IPP60R380C6 IPA60R380C6 IPI60R280C6 IPB60R280C6 IPP60R280C6 IPA60R280C6 IPW60R280C6 IPI60R190C6 IPB60R190C6 IPP60R190C6 IPA60R190C6 IPW60R190C6 IPB60R160C6 IPP60R160C6 IPA60R160C6 IPW60R160C6 IPB60R125C6 IPP60R125C6 IPA60R125C6 IPW60R125C6 IPB60R099C6 IPP60R099C6 IPA60R099C6 IPW60R099C6 IPP60R074C6 IPW60R070C6 IPW60R041C6 IPA50R650CE IPD50R500CE IPP50R500CE IPA50R500CE IPD50R380CE IPP50R380CE IPA50R380CE IPD50R280CE IPP50R280CE IPA50R280CE IPW50R280CE IPP50R190CE IPA50R190CE IPW50R190CE TO-252 DPAK TO-262 I2PAK CoolMOS™ E6 600V TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK IPD60R600CP IPI60R600CP IPB60R600CP IPP60R600CP IPA60R600CP IPD60R520CP IPI60R520CP IPB60R520CP IPP60R520CP IPA60R520CP IPD60R385CP IPI60R385CP IPB60R385CP IPP60R385CP IPA60R385CP TO-247 IPI60R299CP IPB60R299CP IPP60R299CP IPA60R299CP IPW60R299CP IPI60R250CP IPB60R250CP IPP60R250CP IPA60R250CP IPW60R250CP IPI60R199CP IPB60R199CP IPP60R199CP IPA60R199CP IPW60R199CP IPI60R165CP IPB60R165CP IPP60R165CP IPA60R165CP IPW60R165CP IPI60R125CP IPB60R125CP IPP60R125CP IPA60R125CP IPI60R099CP IPB60R099CP IPP60R099CP ID RDS(on) Qg [A] [mΩ] [nC] TO-251 IPAK TO-251 IPAK SL short leads TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK 5.7 750 17.2 IPD60R750E6 IPP60R750E6 IPA60R750E6 7.3 8.1 9.2 10.6 13.8 20.2 600 20.5 520 23.5 450 28 380 32 280 43 190 63 IPD60R600E6 IPP60R600E6 IPA60R600E6 IPD60R450E6 TO-247 IPP60R520E6 IPA60R520E6 IPP60R450E6 IPA60R450E6 IPP60R380E6 IPA60R380E6 IPP60R280E6 IPA60R280E6 IPW60R280E6 IPP60R190E6 IPA60R190E6 IPW60R190E6 IPW60R125CP IPW60R099CP IPW60R075CP IPW60R045CP Packages 6.1 6.8 9 11 12 16 21 25 31 39 60 ThinPAK 8x8 TO-252 DPAK IPD60R3K3C6 6.7 9.4 IPU60R1K4C6 13 IPU60R950C6 20.5 IPU60R660C6 23.4 32 43 58 75 96 119 131 170 290 CoolMOS™ CP 600V ID RDS(on) Qg [A] [mΩ] [nC] TO-251 IPAK SL short leads 1.7 3300 4.7 CoolMOS™ CE 500V ThinPAK 8x8 TO-251 IPAK Low Voltage IPS50R520CP TO-263 D2PAK TO-262 I2PAK High Voltage 13 17 19 23 27 34 48 TO-252 DPAK Silicon Carbide 520 399 350 299 250 199 140 TO-251 IPAK SL short leads IGBT 7.1 9 10 12 13 17 23 TO-251 IPAK Power ICs ID RDS(on) Qg [A] [mΩ] [nC] Applications CoolMOS™ C6 600V CoolMOS™ CP 500V 58 59 TO-251 IPAK SL short leads TO-252 DPAK TO-263 D2PAK TO-262 I2PAK TO-220 TO-220 FullPAK TO-247 ID RDS(on) Qg [A] [mΩ] [nC] 7.3 600 23 IPD65R600C6 IPI65R600C6 IPB65R600C6 IPP65R600C6 IPA65R600C6 6.6 700 35 10.6 13.8 16.1 20.7 38 57.7 47 83.2 380 280 250 190 99 74 70 37 39 45 44 87 127 138 255 330 IPD65R380C6 IPI65R380C6 IPB65R380C6 IPP65R380C6 IPA65R380C6 IPI65R280C6 IPB65R280C6 IPP65R280C6 IPA65R280C6 11 13.4 20.7 21.7 34.1 46 440 330 220 185 115 80 48 63 95 110 163 248 IPW65R280C6 IPD650R250C6 IPI65R190C6 IPB65R190C6 IPP65R190C6 IPA65R190C6 IPW65R190C6 IPI65R099C6 IPB65R099C6 IPP65R099C6 IPA65R099C6 IPW65R099C6 IPP65R074C6 TO-251 IPAK SL short leads TO-252 DPAK TO-263 D2PAK TO-262 I2PAK TO-220 TO-220 FullPAK TO-247 SPP07N60CFD SPA07N60CFD SPW07N60CFD SPI11N60CFD SPP11N60CFD SPA11N60CFD SPW11N60CFD SPI15N60CFD SPP15N60CFD SPA15N60CFD SPW15N60CFD SPI20N60CFD SPP20N60CFD SPA20N60CFD SPW20N60CFD SPP24N60CFD SPW24N60CFD SPW35N60CFD SPW47N60CFD IPW65R070C6 ThinPAK 8x8 CoolMOS™ CFD2 650V ID RDS(on) Qg [A] [mΩ] [nC] TO-251 IPAK TO-251 IPAK SL short leads TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK TO-247 7.3 600 23 IPD65R600E6 IPP65R600E6 IPA65R600E6 10.6 13.8 16.1 20.2 380 280 250 190 39 45 44 73 IPD65R380E6 IPP65R380E6 IPA65R380E6 IPP65R280E6 IPA65R280E6 IPW65R280E6 IPP65R190E6 IPA65R190E6 IPW65R190E6 IPD65R250E6 ThinPAK 8x8 TO-251 IPAK TO-251 IPAK SL short leads tbd 1400 tbd tbd 6.0 8.7 11.4 17.5 tbd 31.2 43.3 68 950 660 420 310 190 150 110 80 41 tbd 20 32 41 68 tbd 118 162 300 TO-252 DPAK TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK TO-247 High Voltage IPW65R037C6 CoolMOS™ E6 650V ID RDS(on) Qg [A] [mΩ] [nC] TO-251 IPAK Applications TO-251 IPAK IPD65R1K4CFD* IPD65R950CFD* IPL65R660CFD IPD65R660CFD IPI65R660CFD IPB65R660CFD IPP65R660CFD IPA65R660CFD IPW65R660CFD IPL65R420CFD IPD65R420CFD IPI65R420CFD IPB65R420CFD IPP65R420CFD IPA65R420CFD IPW65R420CFD IPL65R310CFD IPI65R310CFD IPB65R310CFD IPP65R310CFD IPA65R310CFD IPW65R310CFD IPL65R190CFD IPI65R190CFD IPB65R190CFD IPP65R190CFD IPA65R190CFD IPW65R190CFD IPI65R150CFD IPB65R150CFD IPP65R150CFD IPA65R150CFD IPW65R150CFD IPI65R110CFD IPB65R110CFD IPP65R110CFD IPA65R110CFD IPW65R110CFD IPW65R080CFD Silicon Carbide ID RDS(on) Qg [A] [mΩ] [nC] CoolMOS™ CFD 600V Low Voltage CoolMOS™ C6 650V IPW65R041CFD CoolMOS™ CFDA 650V TO-251 IPAK SL short leads TO-252 DPAK 660* IPD65R660CFDA 420* 310* 190* 150* 110* 80* 48* IPD65R420CFDA TO-262 I2PAK TO-263 D2PAK TO-220 TO-220 FullPAK TO-247 IGBT TO-251 IPAK IPB65R660CFDA IPP65R660CFDA IPB65R310CFDA IPP65R310CFDA IPB65R190CFDA IPP65R190CFDA IPW65R190CFDA IPB65R150CFDA IPP65R150CFDA IPW65R150CFDA IPB65R110CFDA IPP65R110CFDA IPW65R110CFDA IPW65R080CFDA Power ICs ID RDS(on) Qg [A] [mΩ] [nC] IPW65R048CFDA Packages * in development 60 61 Naming System C 3 Company S = Formerly Siemens Specifications C3 = CoolMOSTMC3 S5 = CoolMOSTMS5 Device P = Power MOSFET Breakdown Voltage Divided by 10 (60 x 10 = 600V) Package Type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) I = TO-262 (I2PAK) N = SOT-223 P = TO-220 U = TO-252 (IPAK) W = TO-247 Technology N = N-Channel Transistors Continuous Drain Current (@ TC = 25°C) [A] Power MOSFETs (naming system from 2005 onwards) I P P 60 R 099 C P Company I = Infineon Series Name in this case CoolMOSTMCP for PFC and PWM applications Device P = Power MOSFET RDS(on) [mΩ] Package Type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) I = TO-262 (I2PAK) L = ThinPAK 8x8 N = SO-T223 P = TO-220 U = TO-252 (IPAK) W = TO-247 R = RDS(on) Breakdown Voltage Divided by 10 (60 x 10 = 600V) Low Voltage 60 500V CoolMOS™ CE High Voltage N The new Market Leading Generation of Superjunction MOSFETs As technology leader in high voltage MOSFETs, Infineon now launches a new generation of high voltage MOSFETs, reaching price driven markets such as PC Silverbox, Consumer and Lighting. Silicon Carbide 20 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Key features and benefits of 500V CoolMOS™ CE Easy control of switching behaviour High body diode ruggedness Improved light load efficiency Outstanding reliability with proven CoolMOS™ quality Reduced reverse recovery charge (Qrr) and gate charge (Qg) Price-Performance optimized 500V design IGBT P Power ICs P Packages S Applications Power MOSFETs (naming system until 2005) For further information please visit our website: [ www.infineon.com/ce ] 62 63 Silicon Carbide Features Benchmark switching behavior No reverse recovery charge Temperature independent switching behavior High operating temperature (Tj max 175°C) Applications Server Telecom Solar UPS PC Silverbox Motor Drives Lighting 2 0 -2 -4 -6 T=125°C, VDC=400V, IF=6A, di/dt=200 A/µs -8 0.1 0.13 0.16 0.19 0.22 Improved system efficiency (PFC in CCM Mode operation, full load, lovw line) The fast switching characteristics of the SiC diodes provide clear efficiency improvements at system level. The performance gap between SiC and high-end silicon devices increases with the operating frequency. Efficiency [%] 94.5 94.0 93.5 93.0 92.5 IFX SiC 6A Comp. 1 6A Comp. 2 6A 91.5 60 20 15 Applications rre nt cu rg e su Combined characteristics Bipolar pn diode forward characteristic 10 5 0 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 VF (V) wire bond AI Merged pn-structure and improved surge capability In standard operation the device behaves like a pure SBD, but at high current levels a bipolar component is activated: the much lower voltage drop dramatically reduces the power dissipation at high current peaks and accordingly the risks for thermal runaway. Schottky diode forward characteristic p+ passivation Ti p+ p+ p+ p+ p+ termination epi layer field stop layer SiC substrate backside metalization 120 180 Switchting Frequency [kHz] 240 Silicon Carbide The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The Generation 3 is based on the same technology platform as Generation 2 with the introduction, at package level, of the so called diffusion soldering. Diffusion soldering and improved thermal performance Diffusion soldering is a proprietary Infineon process reducing dramatically the thickness of the solder between chip and lead frame with respect to standard soft soldering. It results into ~40% lower Rthjc per same unit Area. thinQ!™ 1200V The 1200V is the highest voltage family of Infineon SiC Schottky discrete diodes and is now being extended with the TO-247 package. The very good thermal characteristics of the TO-247 in combination with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With the introduction of this package, Infineon now offers a current capability of up to 30A in the 1200V range. Packages 91.0 Reverse recovery charge of SiC versus Silicon devices The majority carrier characteristics of the device imply no reverse recovery charge and the only contribution to the switching losses comes from the tiny displacement charge of capacitive nature. In the same voltage range, Silicon devices show a bipolar component resulting in much higher switching losses. Here the comparison for 600V devices. 0.25 95.0 92.0 25 IGBT 4 -10 0.07 30 Power ICs SiC Schottky diode: SDB06S60 Si pin double diode (2*300V) Ultrafast Si pin diode 6 35 thinQ!™ Generation 3 600V 10 8 Benefits System efficiency improvement compared to Si diodes Reduced cooling requirements Enabling higher frequency/increased power density Higher system reliability due to lower operating temperature Reduced EMI 40 Low Voltage The differences in material properties between SiC and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range up to 100V – 150V, with relatively high on-state resistance and leakage current. On the other hand, SiC Schottky barrier diodes (SBD) can reach a much higher breakdown voltage; Infineon offers products up to 1200V as discrete and up to 1700V in modules. The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low Vf values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design concept consisting in regularly distributed p-doped areas, in conjunction with the pure Schottky ones: the so-called “merged pn-structure” (MPS). High Voltage Silicon Carbide Schottky Diodes thinQ!™ Generation2 600V IF (A) Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the corresponding Si ones, and enable reaching otherwise unattainable efficiency levels. 64 65 Benefits Reduced cooling effort due to reduced losses Increase of the operating frequency with consequent shrink of passive components and savings at system level Increased power density Increase of output power and reduction of specific system cost +5V to SGND VCC1 JFDrv CVCC VCC2 SGND Controller GND1 MDrv IN VReg EN CLJFG CVReg CVEE2 VEE2 -25V to VCC2 BSEN Source cascode 1EDI30J12CL/CP 1600 1400 SiC Schottky barrier diode 1200 Body diode SiC JFET 1000 800 600 400 200 0 0 5 10 15 20 25 30 Silicon Carbide 1) The monolithically integrated body diode has been explicitly optimized to provide a benchmarking switching performance. This decision accounts for the possibility of exploiting the ohmic characteristics of the SiC JFET also in reverse operation with the adoption of a synchronous rectification driving scheme: the relatively high voltage drop of the body diode can be in fact significantly reduced by turning-on the JFET channel in parallel. With such a driving scheme the conduction losses of the diode are negligible, as they play a role only within a very short dead time between turn-off of the channel and commutation of the body diode. High Voltage CoolSiC JFET Monolithically Integrated Body Diode and Synchronous Rectification Applications Solar UPS Industrial Drives Direct measurements in a Three-phase string Inverter (Sunny Tripower by SMA) Pout max 17kW fsw=16kHz Drain cascode Turn on switching energy [uJ] Features Extremely low and temperature independent switching losses Reduced conduction losses at light load with respect to IGBT technologies Monolithically integrated body diode Dedicated driver for direct JFET control High reliability due to missing gate oxide Structural elements similar to SiC diodes, with 10 year IFX proved experience in manufacturing Applications The Infineon approach to SiC switches consists of a simple and safe driver circuit design based on a dedicated driver IC that directly drives both the CoolSiC JFET and the LV p-channel MOSFET, as indicated in the picture on the right. The main features of the unique SiC direct drive approach are: A low-voltage Si MOSFET is used to insure safe off-state during start up or system failure. During normal operation, the LV MOSFET is turned-on and acts like a small resistance A dedicated driver IC operating both normally-on JFET and p-MOS --> enabling a normally-off behavior and best controllability of the JFET Low Voltage The new CoolSiC 1200V SiC JFET family, in combination with the proposed Direct Drive Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so far unattainable efficiency borders. In fact the SiC JFET consistently reduces the switching losses with respect to the available IGBT based Silicon devices and even the conduction losses when its ohmic characteristics are fully exploited. Utmost efficiency at highest power density levels can be reached also thanks to Infineon CoolSiC monolithically integrated body diode, showing a switching performance comparable with that of an external SiC Schottky barrier diode. The Infineon SiC JFET, with its ultrafast body diode and dedicated driver, represents the best solution in solar, UPS and industrial drives applications by combining best performance, reliability, safety and ease of use. SiC JFET Infineon Direct Drive Technology LV MOSFET CoolSiC 1200V SiC JFET & Direct Drive Technology 35 Load current [A] 0,990 0,985 CoolSiC 1200V JFET portfolio and recommended driver / LV MOS for Direct Drive Topology 0,975 0,970 0,960 Si IGBT SiC JFET 0,955 0,950 0,945 0,940 0,05 RDS(on) Voltage 0,965 0,15 0,25 0,35 0,45 0,55 0,65 0,75 0,85 0,95 Measured system efficiencies at optimum operation point P / nP 1200 1200 35 50 70 100 70 100 Sales name IJW120R035T1 IJW120R050T1 IJW120R070T1 IJW120R100T1 IJC120R070T1 IJC120R100T1 JFET Package Driver Driver Package LV MOS TO247 TO247 TO247 TO247 Bare die Bare die 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 BSC030P03NS3 G BSC030P03NS3 G BSC030P03NS3 G BSC030P03NS3 G IPC099P03N IPC099P03N LV MOS Package SuperSO8 SuperSO8 SuperSO8 SuperSO8 Bare die Bare die IGBT Efficiency 0,980 Power ICs Further information on the JFET driver available on page 107 Measured system efficiencies at several DC link voltages (400V up to 800V) G. Deboy, H. Ludwig, R. Mallwitz, R. Rupp, „New SiC JFET with Integrated Body Diode Boosts Performance of Photovoltaic Systems” Proc. PCIM, May 2011 Packages 1) 66 67 Qc IF SM [nC] [A] 2 3 4 5 6 8 10 12 16 3.2 5 8 12 15 19 24 30 38 TO-252 DPAK 11.5 16 32 IDD04S60C 42 49 59 84 98 118 TO-263 D2PAK TO-220 real2pin TO-220 FullPAK IDV03S60C IDB06S60C IDV04S60C IDH05S60C IDV05S60C IDH06S60C IDV06S60C IDH08S60C IDB10S60C TO-252 DPAK TO-263 D2PAK 2 5 8 10 15 20 30 IDV02S60C IDH04S60C IF [A] IDH10S60C TO-220 real2pin TO-247 IDH02SG120 IDH05S120 IDH08S120 IDH10S120 IDW10S120 IDH15S120 IDW15S120 Low Voltage IF [A] Applications 1200V Silicon Carbide High Voltage Schottky Diodes thinQ!™ 600V Silicon Carbide High Voltage Schottky Diodes thinQ!TM G2 IDW20S120 IDW30S120 IDH12S60C IDH16S60C IF [A] 3.2 4.5 6 8 12 15 16 19 11.5 IDD03SG60C 18 26 32 42 49 51 59 TO-263 D2PAK TO-220 real2pin IDH03SG60C IDD04SG60C IDH04SG60C IDD05SG60C IDH05SG60C IDD06SG60C IDH06SG60C IDD08SG60C IDH08SG60C IDD09SG60C IDH09SG60C IDD10SG60C IDH10SG60C IDD12SG60C IDH12SG60C TO-220 FullPAK 35 50 70 100 TO-252 DPAK TO-263 D2PAK TO-220 real2pin TO-247 IJW120R035T1 IJW120R050T1 IJW120R070T1 IJW120R100T1 Packages Power ICs IGBT 3 4 5 6 8 9 10 12 TO-252 DPAK Qc IF SM [nC] [A] RDS(on) Silicon Carbide 600V Silicon Carbide High Voltage Schottky Diodes thinQ!TM G3 High Voltage 1200V CoolSiC JFET 68 69 Naming System Naming System I D H X S G X Applications thinQ!™ Silicon Carbide Schottky diodes C Specifications C = Surge current stable Package Type D = DPAK H = TO-220 real 2 pin B = D2PAK D = DPAKH = TO-220 V = TO-220FP W = TO-247 G= low thermal resistance Technology S = SiC Diode Continuous Drain Current (@ TC = 25°C) [A] 120 R XXX T1 Series name RDS(on) [mΩ] Device J = JFET R = RDS(on) Package Type W = TO-247 Breakdown Voltage 120 = 1200V Infineon’s 650V CoolMOS™ CFD2 – market leading technology with integrated fast body diode World’s lowest area specific on-state resistance (Ron * A) Softer commutation behavior and therefore better EMI behavior Best fit for applications such as telecom, server, battery charging, solar, HID lamp ballast, LED lighting Silicon Carbide W Infineon’s OptiMOS™ 60-150V in CanPAK™ You CanPAK™ more performance in your design Top-side cooling - best thermal behaviour Highest efficiency and power density Best fit for applications like DC-DC conversters for telecom, voltage regulation, solar micro inverters and synchronous rectification IGBT Company I = Infineon J We are the Leader in Energy Efficiency Technologies Being the Leader in Energy Efficiency Technologies, Infineon’s products are enormously important for future energy supplies in terms of both exploiting renewables and using energy efficiently. Explore our wide offer of high-end products for your application: CoolSiC Silicon Carbide JFET I Low Voltage Breakdown Voltage 60 = 600V 120 = 1200V High Voltage Device D = Diode Infineon’s RC-Drives Fast IGBTs – drive high-frequency inverter for comfortable quietness Smooth switching performance leading to low EMI levels Optimized Eon, Eoff and Qrr for low switching losses Best fit for applications in domestic and industrial drives like compressors, pumps and fans Power ICs Company I = Infineon Packages CoolSiC 1200V SiC JFET & Direct Drive Technology Leading edge technology for utmost efficiency Best solution combining performance, reliability, safety and ease of use. Best fit for applications like solar, UPS and Industrial Drives For further information please visit our website: 70 [ www.infineon.com/power_management_new_products ] 71 IGBT Benefits IGBTs offer much higher current density than MOSFET power switches due to bipolar action Insulated gate allows bipolar performance with MOSFET gate drive performance High efficiency = smaller heat sink which leads to lower overall system cost 175°C Tj(max) leading to higher reliability Soft Switching/Resonant and Hard Topologies are Comprehensively Supported Applications We are famous for IGBT technology leadership and offer a comprehensive portfolio for the general purpose inverters, solar inverters, UPS, Induction heating, Microwave Oven, Rice cookers, Welding and SMPS segments. Infineon has a huge portfolio addressing the following two switching techniques: Soft Switching/resonant The world famous IHW series IGBTs – #1 best selling family worldwide Available in 600V, 1100V, 1200V, 1350V and 1600V voltage classes Best in class efficiency and robustness Low Voltage Hard Switching 600V RC-D IGBTs 600V RC-Drives Fast 600V TRENCHSTOP™ DuoPack IGBTs 600V/1200V HighSpeed 3 1200V TRENCHSTOP™2 For IGBT usage, applications are divided into two switching techniques Switching frequency is the main selection criteria of IGBT DC Current (max) MOSFETS IGBTs high Low Frequency Applications Medium Frequency Applications High Frequency Applications (eg. drives, induction cooking) (eg. UPS) (eg. SMPS, lamp ballast) Applications using soft switching/resonant technique Applications using hard switching technique Inverterised Microwave Oven Inverterised major home appliances: Washing machines, dishwashers, fridges, air conditioning Induction heating cook top General purpose inverters Induction heating rice cooker Solar inverters Office printers with induction heating used for ink and band-feed Partial PFC stages Silicon Carbide IGBT versus MOSFET High Voltage Break IGBT UPS / Welding Bipolar Transistor low Discrete IGBT high < 150 kHz ultra high ( > 150 kHz) Number 1 worldwide supplier 1 in every 4 Discrete IGBTs sold comes from Infineon Features Low Vce(sat) due to thin wafer technology Low switching losses High efficiency (cooler packages) Huge portfolio (current, voltage and package types) Excellent EMI behaviour Technical support for customers Solid logistic support Highest quality standards Leaders in IGBT Innovation Benefits Operating range up to 100kHZ High efficiency devices optimised for lowest switching and conduction losses Cooler devices = smaller heat sinks Excellent EMI behaviour meaning smaller EMI filters Comprehensive portfolio Design support available on request Packages IGBT medium < 40 kHz Power ICs Frequency low < 12 kHz 72 73 IGBT Selection Tree IGBT NO Single IGBT IGBT + Anti-Parallel Diode Soft Applications YES Hard Diode Commutation 20 – 100 kHz HighSpeed 2 – 20 kHz TRENCHSTOP™ (Duopack) 8 – 60 kHz RC series (monolythic) 2 – 20 kHz TRENCHSTOP™ RC-Drives (monolythic) 20 – 100 kHz HighSpeed DuoPack (discrete) High Voltage 2 – 20 kHz TRENCHSTOP™ Low Voltage Frequency Range Voltage Range 600V 1200V 600V 1200V 600V 1200V 600V 1100V 1200V 1350V 1600V 600V 600V 1200V 600V 1200V Part Number IGpccT120… IGpccN120T2 IGpccN60H3 IGpccN120H2 IGpccN120H3 IHpccN60T IHpccT60… IHpccT120… IHpccNvvvR2 IHpccNvvvR3 IHpccN60R IHpccN60RF IKpccN60R IKpccN60RF IKpccN60T IKpccT120… IKpccN120T2 IKpccN60H3 IKpccN120H2 IKpccN120H3 Silicon Carbide IGpccN60T… CCM-PFC Welding AirCon Washing machine Half Bridge Resonant (Current resonance – 600V parts) Half Bridge Resonant (Current resonance – 600V parts) Single Switch Single Switch (Voltage resonance > 600V parts) (Voltage resonance > 600V parts) Welding Inverter Full bridge inverter Two Transistor Forward Packages topologies without anti-parallel diode Induction Heating Microwave Multifunction Printers Power ICs Hard switching Welding Inverter Full Bridge Two Transitor Forward Induction Heating Microwave Multifunction Printers Solar Inverter Asymmetrical Bridge Symmetrical full bridge Three level type I or Three level type II converter Motor Control Three phase inverter Full bridge inverter UPS Bridge Uninterruptable Power Supply Three level type II converter Major Home Appliances Symmetrical full bridge IGBT Application 74 75 RC-Drives Fast IGBTs Drive high-frequency inverter for comfortable quietness . The RC-Drives IGBT technology was released by Infineon at the end of 2009 as a cost-optimized solution to address the price-sensitive consumerdrives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. To meet the rising demand of the IGBTs for the low power motor drives consumer market, a new version of the RC-Drives IGBT was developed: the IGBT and diode losses are optimized to reduce the inverter losses at switching frequencies of 4~30kHz.This new family of Infineon’s reverse conducting IGBT is called RC-Drives Fast. For consumer drives this series enables high efficient designs of inverters that feature operations above 16kHz to reduce the audible noise to an absolutely silent level. Furthermore highly precise vector control technologies can be used to provide more torque in operation at low speed and high performance dynamics in the control at high speed. The small footprint needed by the components enable high power density designs with less system cost. Preview Rapid Diode - Emitter controlled silicon diode family expansion targeting applications with switching speeds up to 50 kHz. Target application is >100W PFC.* Automotive Discrete IGBT portfolio qualified to AEC-Q101. Target application is EV-aircon, PTC heater, and inverter drive; HID lighting and Piezo-injection for diesel/gasoline vehicles.* TO-263 D2PAK TO-220 TO-262 TO-220 FullPAK 6 10 15 20 30 30 40 50 75 3 4 IKU04N60R IKD04N60RF IKD04N60R 6 IKU06N60R IKD06N60RF IKD06N60R IKB06N60T IKP06N60T IKA06N60T 10 IKU10N60R IKD10N60RF IKD10N60R IKB10N60T IKP10N60T IKA10N60T 15 IKU15N60R IKD15N60RF IKD15N60R IKB15N60T IKP15N60T IKA15N60T IKB20N60T IKP20N60T TO-247 IGP06N60T IGB10N60T IGP10N60T IGB15N60T IGP15N60T IGB30N60T IGP30N60T IGW30N60T IGB50N60T IGP50N60T IGW50N60T Low Voltage Single IGBT TO-252 DPAK IGW75N60T IKD03N60RF 20 30 50 75 IKP04N60T IKI04N60T High Voltage For further information visit www.infineon.com/aircon DuoPack High efficiency - the CCM PFC stage uses the latest generation HighSpeed 3 IGBT and SiC diode to achieve a PFC efficiency of > 97%. SMD mounting and high current density high speed IGBT allow for improved PCB area optimisation. IKW20N60T IKW30N60T IKW50N60T IKW75N60T TRENCHSTOPTM IGBT and DuoPack 1200V Product Family TO-251 IC (max.) [A] TO-252 DPAK TO-263 D2PAK TO-220 TO-262 TO-220 FullPAK TO-247 TRENCHSTOPTM Single IGBT DuoPack Thermal behaviour - The inverter stages are driven with best in class current versus package size IGBTs, 15A DuoPacks in a DPAK (TO-252) package are used for driving a 1kW compressor. Application tests show the case temperature staying below 110°C with an ambient temperature of 65°C. This provides more design freedom and a cost effective opportunity to replace IPMs in the inverter stage of the compressor and fan. TO-251 Silicon Carbide IC (max.) [A] Features Assembly - Full power electronic SMD assembly example for high capacity production. Applications 600V Product Family 8 15 25 40 60 8 15 25 40 TRENCHSTOPTM 2 IGW08T120 IGW15T120 IGBT Infineon is renowned for offering best in class discrete devices and ICs – now with the inverterised air conditioning reference board, Infineon can present system expertise in the fast growing inverterised air conditioning market. TRENCHSTOPTM IGBT and DuoPack IGW25T120 IGW40T120 IGW60T120 IKW08T120 IKW15T120 IKW15N120T2 IKW25T120 IKW25N120T2 IKW40T120 IKW40N120T2 Power ICs IGBT for Air Conditioning Packages * in development 76 77 HighSpeed 3 IGBT and DuoPack Portfolio for 600V, 1100V, 1200V, 1350V & 1600V 1200V Product Family IGBT & Diode 15 20 25 30 IHW30N60T IHW40T60 IHW40N60R IHW40N60RF 40 1100V 1200V 1350 1600V IHW15T120 IHW15N120R3 IHW20N120R3 IHW20N135R3 IHW25N120R2 IHW30N110R3 IHW30N120R2 IHW30N160R2 IHW40T120 TO-251 TO-252 DPAK 3 TO-262 TO-220 FullPAK IKW15N120H3 IKW25N120H3 IKW40N120H3 TO-251 TO-247 IC (max.) [A] IGP01N120H2 IGB03N120H2 IGP03N120H2 IGA03N120H2 IGW03N120H2 IKB03N120H2 IKP03N120H2 IKA03N120H2 IKW03N120H2 3 HighSpeed 3 IGBT and DuoPack 600V Product Family TO-263 D2PAK TO-220 IGB20N60H3 IGB30N60H3 IGP20N60H3 IGP30N60H3 IKB20N60H3 IKB30N60H3 IKP20N60H3 IKP30N60H3 TO-262 TO-220 FullPAK IGA30N60H3 TO-247 IGW20N60H3 IGW30N60H3 IGW40N60H3 IGW50N60H3 IGW60N60H3 IGW75N60H3 IGW100N60H3 IKW20N60H3 IKW30N60H3 IKW40N60H3 IKW50N60H3 IKW60N60H3 IKW75N60H3 1200V 20 30 40 50 60 75 100 20 30 40 50 60 75 TO-252 DPAK TO-263 D2PAK TO-220 Real 2pin TO-220 FullPAK Real 2pin TO-247 3 6 9 15 23 30 45 50 75 100 4 9 12 18 30 IDD03E60 IDD06E60 IDD09E60 IDD15E60 IDP06E60 IDB09E60 IDB15E60 IDP15E60 IDB23E60 IDP23E60 IDB30E60 IDP30E60 IDB45E60 IDP45E60 IDV30E60C IDW30E60 IDW50E60 IDW75E60 IDW100E60 IDP04E120 IDP09E120 IDB12E120 IDP12E120 IDB18E120 IDP18E120 IDB30E120 IDP30E120 Packages DuoPack IGBT IC (max.) [A] TO-251 TO-252 DPAK 600V IGB01N120H2 600V / 650V IGBT DuoPack IGD01N120H2 1 TO-220 TO-247 IGW40N120H3 600V and 1200V TO-263 D2PAK TO-220 FullPAK IGW25N120H3 Discrete Emitter Controlled Diodes TO-252 DPAK TO-262 IGW15N120H3 1200V Product Family TO-251 TO-220 15 25 40 15 25 40 HighSpeed2 IGBT and DuoPack IC (max.) [A] TO-263 D2PAK Silicon Carbide 600V IC (max.) [A] Low Voltage TO-247 (IHW...) High Voltage TO-262 IGBT TO-220 Power ICs TO-263 D2PAK IGBT TO-252 DPAK DuoPack TO-251 IC (max.) [A] Applications TRENCHSTOPTM RC-H series 78 79 Naming System I K W 40 N 120 H Applications Discretes IGBT and Emitter Controlled Diodes 3 Company I = Infineon S = Formerly Siemens High Voltage Technology N = N-Channel T = TRENCHSTOPTM E = Emitter Controlled Diodes (for diode only) Nominal Voltage Divided by 10 (120 x 10 = 1200V) – = Fast IGBT (~20kHz) Hχ = HighSpeed Generation (600 - 1200V) Tχ = TRENCHSTOP™ Generation (600V IGBT3) (1200V IGBT4) Rχ = Reverse Conducting RF = Reverse Conducting Fast A = Automotive Our High Performance Solution Inverterised Air-conditioning Reference Board Infineon is renowned for offering best in class discrete devices and ICs – now with the inverterised air conditioning reference board, Infineon can present system expertise in the fast growing inverterised air conditioning market. Key features and benefits of Infineon’s Air-conditioning reference board Size and thermally optimised reference platform for inverterised air-conditioner Innovative cooling for high power SMD IGBTs Full power electronic SMD assembly for high capacity production Packages Generation For further information please visit our website: 80 Silicon Carbide Nominal Current (@ 100°C) [A] IGBT diodes only Power ICs Package Type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) P = TO-220 U = TO-251 (IPAK) W = TO-247 I = I2PAK V = Real 2pin TO-220 FP P = Real 2Pin TO-220 Low Voltage Device K = IGBT + Diode (normal drives) H = optimised for soft switching applications (e.g. induction heating) G = Single IGBT D = Diode [ www.infineon.com/aircon ] 81 Power Factor Correction and Combo Controller Continuous Conduction Mode PFC ICs Applications Discontinuous Conduction Mode PFC ICs TDA486x Low Voltage zero crossing detector ICE2PCSxx Fulfills Class D Requirements of IEC 61000-3-2 Lowest count of external components Adjustable and fixed sw frequencies Frequency range from 20kHz to 285kHZ Versions with brown-out protection available Wide input range supported Enanched Dynamic Response during Load Jumps Cycle by Cycle Peak Current Limiting Integrated protections OVP, OCP DIP8 and DSO8 Leadfree, RoHS compliant High Voltage Silicon Carbide Power Factor Controller IC for high-power factor and low THD additional features to TDA4862 Reduced tolerance of signal levels Improved light load behavior Open loop protection Current sense input with leading edge blanking LEB Undervoltage protection 2nd Generation Continuous Conduction Mode (CCM) Power Factor Correction IC Product Portfolio Product ICE2PCS01 ICE2PCS02 ICE2PCS03 ICE2PCS04 ICE2PCS05 ICE2PCS01G ICE2PCS02G ICE2PCS03G ICE2PCS04G ICE2PCS05G Frequency(SW) Current Drives Package 50kHz - 285kHz 2.0A 65kHz 2.0A 100kHz 2.0A DIP-8 133kHz 2.0A 20kHz - 250kHz 2.0A 50kHz - 250kHz 2.0A 65kHz 2.0A 100kHz 2.0A DSO-8 133kHz 2.0A 20kHz - 250kHz 2.0A IGBT Power Factor Controller (PFC) IC for high-power factor and active harmonic filter IC for sinusoidal line-current consumption Power factor approaching 1 Controls boost converter as an active harmonics filter Internal start-up with low current consumption Zero current detector for discontinuous operation mode High current totem pole gate driver Trimmed ±1.4% internal reference Undervoltage lock out with hysteresis Very low start-up current consumption Pin compatible with world standard Output overvoltage protection Current sense input with internal low pass filter Totem pole output with active shutdown during UVLO Junction temperature range -40 to +150°C Available in DIP-8 and SO-8 packages 2nd Generation Continuous Conduction Mode (CCM) Power Factor Correction IC Features Power ICs TDA4863 / TDA4863-2 Packages TDA4862 82 83 Fixed Frequency PWM IC and CoolSET™ Product Portfolio Product ICE3PCS01G ICE3PCS02G ICE3PCS03G Frequency(SW) Current Drives Features Package 0.75A OVP+Brown-out DSO-14 0.75A OVP Adjustable DSO-8 0.75A Brown-out DSO-8 Applications Low Voltage Fulfills Class D Requirements of IEC 61000-3-2 Integrated digital voltage loop compensation Boost follower function Bulk voltage monitoring signals, brown-out Multi protections such as Double OVP Fast output dynamic response during load jump External synchronization Extra low peak current limitation threshold SO8 and SO14 Leadfree, RoHS compliant ICE1CS0x/G High Voltage Pre-short Protection Trimmed Reference Voltage ±2.5% (±2% at 25°C) BiCMOS technology for wider VCC Range Power Factor Correction Block Fulfills Class D Requirements of IEC 61000-3-2 Fixed switching frequency (sync to half PWM freq.) AC brown-out protection Average Current Control Max Duty Cycle of 95% Enhanced Dynamic Response for fast load response Unique Soft-Start to Limit Start Up Current Over-Voltage Protection Frequency(SW) PFC=65kHz PWM=130kHz Current Drives Package 2.0A DIP-16 2.0A DSO-16 Packages Power ICs Product ICE1CS02 ICE1CS02G Pulse-Width-Modulation Block Fixed Switching Frequency Option for external control synchronization Built in Soft Start for higher reliability Max Duty Cycle 47% or 60% Overall Tolerance of Current Limiting <±5% Internal Leading Edge Blanking Slope Compensation Fast, soft switching totem pole gate drive (2A) SO16 and DIP16 Pb-free lead plating and RoHS compilant All protection features available Silicon Carbide Combination of Continuous Conduction Mode PFC with Two-Transistor Forward PWM IC IGBT 3rd Generation Continuous Conduction Mode (CCM) Power Factor Correction IC Features 84 85 LLC Resonant (No SR) LLC Resonant + SR Applications Resonant LLC Half-Bridge Controller IC with Integrated Sychronised Rectifier control Low Voltage Resonant LLC Half-Bridge Controller IC Frequency(SW) Dead Time(ns) Current Drives Package 30kHZ~600kHz 380 1.5A DSO-8 Product ICE2HS01G Frequency(SW) 30kHz~1MHz Dead Time(ns) Current Drives Package 125ns~2us 0.3A DSO-20 Packages Power ICs Product ICE1HS01G Novel LLC/SR operation mode and controlled by primary side controller Multiple protections for SR operation Tight tolerance control Accurate setting of switching frequency and dead time Simple system design Optimized system efficiency Multiple converter protections: OTP, OLP, OCP, Latch-off Enable External disable for either SR switching or HB switching Lead Free, RoHS compliant package DSO-20 package Silicon Carbide Novel and simple design (12 components + HB driver) Minimum operating frequency is adjustable externally Burst mode operation for output voltage regulation during no load and/or bus over-voltage Multiple protections in case fault Input voltage sense for brown-out protection Open loop/over load fault detection by FB pin with auto-restart and adjustable blanking/restart time Frequency shift for over-current protection Lead Free, RoHS compliant package DSO-8 package IGBT High Voltage ICE2HSO1G ICE1HSO1G 86 87 Climate Saver Gold Climate Saver 80 PLUS® Platinum Applications Climate Saver Standard and Bronze certification for Infineon's Silverbox reference design 12 V DC/DC 5V DC/DC 5V 3V3 Low Voltage 12V 3V 3 PFC / PWM 5V Standard and Bronze PWM CoolSETTM ICE1CS02/G 5V High Voltage PFC Block PWM Block PFC ICE3AR10080JZ/CJZ ICE3AR4780JZ ICE3AR2280JZ/CJZ CoolSETTM Gold Climate Saver Silver ICE3PCS01G PFC Block DC/DC 5V ICE3PCS02G ICE3PCS03G PWM Block ICE2HS01G ICE3AR10080JZ/CJZ DC/DC 3V3 12V PFC PWM 5V Silver PFC Block PWM Block ICE2PCS01G ICE3AR4780JZ Standby Block CoolSET™ 80 PLUS® Platinum certification for Infineon's Silverbox reference design ICE3AR2280JZ/CJZ ICE3AR0680JZ ICE3BR2280JZ Silicon Carbide ICE3AR0680JZ ICE3PCS01G PFC Block ICE3PCS02G ICE3PCS03G PWM Block ICE2HS01G ICE2QR4780Z Standby Block CoolSET™ ICE3BR0680JZ ICE2QR2280Z ICE2QR0680Z ICE2QR2280G For further information visit www.infineon.com/silverbox IGBT Standby Block CoolSET™ CoolSETTM ICE2PCS02/G ICE1HS01G-I ICE3AR10080JZ/CJZ ICE3AR4780JZ ICE3AR2280JZ/CJZ Power ICs Standby Block CoolSET™ ICE3AR0680JZ ICE2QR4765 ICE2QR1765 Packages ICE2QR0665 88 89 Isolated AC/DC Fixed Frequency PWM IC and CoolSET™ Features Applications Quasi-resonant PWM IC and CoolSET™ Features zero crossing detector Quasi-resonant PWM IC and CoolSET™ Product Portfolio VDS (breakdown) 650V 650V 650V 650V 650V 650V 650V 650V 800V 800V 800V 800V R(DS)on 4.7Ω 4.7Ω 4.7Ω 1.7Ω 1.7Ω 1.7Ω 0.6Ω 1.0Ω 4.7Ω 2.2Ω 2.2Ω 0.6Ω Power (Universal) Package 19W 19W 19W 33W 33W 33W 50W 41W 22W 31W 31W 57W DIP-8 DSO-8 DIP-8 DSO-8 DIP-7 DIP-8 DSO-12 DIP-7 DIP-8 DSO-12 DIP-8/DIP-7/DSO-12 DIP-7 DIP-7 DIP-7 DSO-12 DIP-7 Active Burst Mode to achieve the lowest Standby Power Requirements < 50 mW Optional Latched Off Mode (L) to increase robustness and safety of the system Adjustable Blanking window for high load jumps to increase reliability Startup Cell switched off after Start Up 65kHz/10kHz/130kHz internally fixed Switching Frequency Over-temperature, over-voltage, short-winding, overload and open-loop, VCC Under-voltage, (Brownout) protections Fixed softstart time Overall Tolerance of Current Limiting < ±5% Internal Leading Edge Blanking Time Max duty cycle 72% PB-free Plating and RoHS compliance DIP, DSO and FullPAK packages Fixed Frequency PWM IC and CoolSET™ Product Portfolio Product ICE3AS03LJG ICE3BS03LJG ICE3GS03LJG ICE3BR4765J ICE3BR1765J ICE3RR1065J ICE3BR0665J ICE3BR4765JZ ICE3BR1765JZ ICE3BR0665JZ ICE3BR4765JG ICE3A1065ELJ ICE3A2065ELJ ICE3AR10080JZ ICE3AR10080CJZ ICE3AR4780JZ ICE3AR2280JZ ICE3AR2280CJZ ICE3AR0680JZ ICE3BR2280JZ ICE3BR0680JZ Frequency(SW) 100kHz 65kHz 130kHz 65kHz 65kHz 65kHz 65kHz 65kHz 65kHz 65kHz 65kHz 100kHz 100kHz 100kHz 100kHz 100kHz 100kHz 100kHz 100kHz 65kHz 65kHz VDS (breakdown) R(DS)on Power (Universal) 650V 650V 650V 650V 650V 650V 650V 650V 650V 650V 800V 800V 800V 800V 800V 800V 800V 800V 4.7Ω 1.7Ω 1.0Ω 0.6Ω 4.7Ω 1.7Ω 0.6Ω 4.7Ω 3.0Ω 1.0Ω 10.0Ω 10.0Ω 4.7Ω 2.2Ω 2.2Ω 0.6Ω 2.2Ω 0.6Ω 18W 31W 28W 49W 18W 30W 47W 17W 16W 28W 10W 10W 20W 28W 28W 52W 28W 52W Package DSO-8 DSO-8 DSO-8 DIP-8 DIP-8 DIP-8 DIP-8 DIP-7 DIP-7 DIP-7 DSO-12 DIP-8 DIP-8 DIP-7 DIP-7 DIP-7 DIP-7 DIP-7 DIP-7 DIP-7 DIP-7 Packages Product ICE2QS01 ICE2QS02G ICE2QS03 ICE2QS03G ICE2QR4765Z ICE2QR4765 ICE2QR4765G ICE2QR1765Z ICE2QR1765 ICE2QR1765G ICE2QR0665/Z/G ICE2QR1065Z ICE2QR4780Z ICE2QR2280Z ICE2QR2280G ICE2QR0680Z Low Voltage Auto restart mode for over-temperature protection Latch-off mode for output over-voltage, shortwinding BiCMOS Technology (controller) for wide Vcc operation and low IC power consumption Peak power limitation with input voltage compensation Minimum switching frequency limitation (no audible noise on Power Units On/Off) DIP & DSO Package (for controllers and CoolSET™) PB-free Plating and RoHS compliance Silicon Carbide IGBT Integrated 650V CoolMOS™ or HV start-up cell for IC self-power supply Quasi-Resonant operation with Digital Frequency Reduction High average efficiency over wide load range Stable operation without jittering/audible noise problem Active burst mode operation for very low stby losses (to achieve standby power <100mW) Auto restart mode for VCC under-voltage/overvoltage protection Auto restart mode for open-loop and output overload protection Power ICs CoolSETTM High Voltage CoolSETTM 90 91 MOSFET Gate Driver IC 6 x 6 IQFN High-Performance DrMOS (Driver+MOS) PX3516 TDA21211 / TDA21220 / TDA21222 / TDA21223 Features Dual MOSFET driver for synchronous rectified bridge converters Adjustable high-side and low-side MOSFET gate drive voltages for optimal efficiency Integrated bootstrap diode for reduced part count Adaptive gate drive control prevents cross-conduction Fast rise and fall times supports switching rates of up to 2MHz Features Intel compliant DrMOS, Power MOSFET and Driver in one package For Synchronous Buck - step down voltage applications Wide input voltage range 5V ... 25V High efficiency Extremely fast switching technology for improved performance at high switching frequencies Remote Driver Disable function SMOD−Switching Modulation of low side MOS Extremely Robust Switch Node -20V … 30V for added reliability in noisy applications PX3516 TDSON10 Y 1 0°C to 125°C +4.5V to 6,5V 30 1.15, 2.10 410uA VCC BOOT HS Driver UVLO PWM Control Logic Low Voltage High Voltage Includes active PMOS structure as integrated bootstrap circuit for reduced part count Adaptive Gate Drive for shoot through protection 5V High and Low Side Driving voltage Compatible to standard PWM controller ICs with 3.3V and 5V logic Three-State functionality Thermal warming and shutdown (TDA21222) Small Package: IQFN-40 (6 x 6 x 0.8 mm3) RoHS Compliant (Pb Free) For further information visit www.infineon.com/drmos Input Voltage SMOD function Thermal warning/shutdown Max average load current MOSFET Voltage Schottky Diode PWM levels Shoot through protection TDA21211 TDA21220 TDA21222 TDA21223 30V Low Side – 35A 30V Included compatible +3.3V / +5V (tolerant) Included 16V Low Side – 50A 25V Included compatible +3.3V / +5V (tolerant) Included 16V Low Side 50A 25V Included compatible +3.3V / +5V (tolerant) Included 16V Low Side 50A 25V Included compatible +5V incl. High-Z state Silicon Carbide Included UGATE IGBT Capable of sinking more than 4A peak current for low switching losses Three-state PWM input for output stage shutdown VCC under-voltage protection Lead-free (RoHS compliant) SOIC and DFN packages PHASE ShootThrough Protection PVCC LS Driver LGATE Power ICs Gate Driver Package RoHS-compliant Number of channels Maximum junction temperature Supply voltage, Vcc BOOT to GND PWM Inputs Quiescent current Iq Applications Non-Isolated DC/DC GND Packages PAD 92 93 As microprocessors and ASICs have grown in power and complexity, their voltage regulation requirements have become increasingly demanding. This growing complexity has led to the introduction of Primarion Digital Power Management (DPM) solutions with increased accuracy, realtime monitoring and control capabilities via digital communications bus. The simplified system design the DPM solution provides leads to lower cost and higher performance implementations. HS Driver DISB VSW/PHASE HS Logic VCIN Shoot Through Protection Unit LS Logic SMOD LS Driver IC Driver CGND Primarion’s Core Power ICs are designed into voltage regulator modules (VRMs) and motherboards for leading server original equipment manufacturers (OEMs) and are currently shipping into major server OEM systems to power CPU and GPU. Primarion’s digital power system-level solutions enable improved digital control features: better accuracy and use of lower cost passive components through adaptive digital calibration, improved ability to respond to fast changes in power requirements (transients) using fewer external capacitors with proprietary Active Transient Response (ATR), and easier design-in with a graphical user interface. Primarion’s overall solution requires substantially fewer components and associated costs as compared to current analog power solutions. Input Logic 3-State PWM Low Voltage Level Shifter GH GL PGND High Voltage BOOT VIN Infineon/Primarion PowerCode™ is a software tool which greatly simplifies the configuration and performance optimization of Infineon digital controllers. It provides an intuitive Graphical User Interface (GUI) that runs on Microsoft Windows. The program comes with an automated design wizard that guides design engineers through the process of configuring single or multi-chip systems. Factory default configurations are supplied which can be easily modified through a variety of dialogs. Range checking and error detection ensure proper configuration. Additional features included are: Chip detection Real-time telemetry and temperature information Fault detection and clearing System file editing Bode plots and load models Current Sense network design Phase and Frequency adjustment Input and Output settings Access to PMBus programming Packages Power ICs Silicon Carbide UVLO VDR IGBT VCIN Applications Digital Controllers for Core and Memory Power DrMOS application diagram 94 95 Lighting ICs TDA21801 Smart FL Ballast Controller With the fan speed controller TDA21801, essential system monitoring features of switched mode power supplies (SMPS) such as adjustable minimum fan speed, fan ON/OF and overtemperature protection (OTP) can be easily implemented. Only few external components added to the IC are necessary for it. Smart Ballast Control ICs from Infineon integrate all functions required to operate FL lamps such as preheat-, ignition- and run- mode and protection features. Digital mixed-signal power control is employed enabling speedy, cost effective and stable ballast designs with a minimum number of external components. Reliable and robust high voltage isolation is achieved using Infineon’s proprietary Coreless Transformer Technology (CLT). Benefits Full control over fan speed due to precision reference Low system cost when replacing 4-wire fans Reduced noise level Increased safety of power supplies Features In combination with 2-wire fans same functionality as 4-wire fan solution Overtemperature protection feature to protect system and power supply Adjustable minimum fan speed (750 to 4000rpm) Fan speed can be increased by external PWM or analogue signal SO-8 Package/RoHS compliant Integrated High Performance PFC Stage Intelligent Digital/Mixed Signal Power Control Integrated High Voltage Half Bridge Driver All Parameters set using only resistors Highly accurate timing and frequency control over a wide temperature range Low Voltage High Voltage The TDA21801 is designed for applications using 3- or 4-wire fan solutions like PC silver boxes, Server silver box AC/DC converter and industrial/medical power supplies. Applications Fan Speed Controller Packages Power ICs IGBT Silicon Carbide PFC Controller Ballast Controller HV-Driver 96 97 Features Able to handle lamp chokes with higher saturation behavior Special in-circuit test mode for faster test time max. 170μA 120kHz 150kHz 2500ms 2.75μs 1.50μs +900V 1.7V 0.85V +40μA – – 18μs – – 2.47V 2.68V 1.835V 0.237V -25°C – – 22.7μs 1.0V 1.0V 2.5V 2.73V 1.88V 0.31V – – – 26μs – – 2.53V 2.78V 1.915V 0.387V +125°C – 17.5V No high voltage capacitor required for detection of lamp removal (capacitive mode operation) Automatically restarts by surge and inverter overcurrent events Skipped preheating when line interruption < 500ms Self adapting dead time adjustment of the half bridge driver One single restart at fault mode Enables ballast compatibility with a wider range of lamp types Flexible support of both current and voltage mode preheating Reduced BOM costs Intelligent discrimination between surge & half bridge overcurrent events Meets standards for emergency lighting (according to DIN VDE 0108) Eases design of multi-power ballasts and reduces EMI Enhanced reliability of ballasts ICB2FL02 G The ICB2FL02 G is functionality identical to the ICB2FL01 G with adjustments to certain timings and parameters to further optimize performance in dimming ballasts. Function Cap load 1 protection Suitable for Dimming Max adjustable run frequency Adjustable dead time Dead time detector level Capacitive mode 2 detector level 3 ICB2FL02 G Deactivated Optimized max. 140kHz 1.05μs -50mV -50mV IGBT 10V – – 20kHz FRFRUN 0ms 2.25μs 1.00μs -900V 1.5V 0.75V -40μA – typ. SO-19 – 14V 110μA – – – 2.50μs 1.25μs – 1.6V 0.80V – – ICB2FL01 G Activated yes max. 120kHz 1.05μs to 2.5μs -100mV -100mV Power ICs PFC preconverter control with critical and discontinuous CM Maximum controlled on-time Hysteresis of zero current detector PFC Current limitation threshold Reference voltage for control of bus voltage Overvoltage detection threshold Undervoltage detection threshold Open loop detection Junction operating temperature range Pb-free lead plating RoHS compliant min. Benefits Optimized lamp choke size and reduced BOM costs Dramatically reduced time for key tests such as end of life detection, preheat/ignition timeout and pre run operation modes Suitable for dimming and multi-power ballasts Packages Short Form Data Package Operating voltage range Turn-on threshold Supply current during UVLO and fault mode Operating frequency of inverter during RUN mode Operating frequency of inverter during preheating mode Preheating time Adjustable self-adapting dead time max between LS and HS gate drive Adjustable self-adapting dead time min between LS and HS gate drive Operating voltage range of floating HS gate drive LS Current limitation threshold: Ignition/start up/soft start/pre run LS Current protection threshold during RUN mode and preheating End-of-life detection threshold Detection of non-ZVS operation CapMode 1 & 2 Excellent dynamic PFC performance enables very low THD across wide load ranges Separate adjustable levels of lamp overload and rectifier effect detection Adjustment of the preheat time Applications ICB2FL01 G Low Voltage Infineon’s 2nd Generation Smart Ballast Controller ICB2FL01 G is designed to control a fluorescent lamp ballast including Power Factor Correction (PFC) Lamp Inverter Control and High voltage level-shift half bridge driver with Coreless Transformer Technology High Voltage Smart Ballast Controller Silicon Carbide ICB2FL01 G 98 99 LED Driver for General Lighting Infineons’s latest Smart Ballast Controller ICB2FL03 G in SO-16 offers very similar performance and feature set compared to the well established SO-19 product ICB2FL01 G LED based lighting sources are the best suited candidates to replace inefficient lighting solutions such as incandescent or halogen lamps that are still widely used today. Current LED driver design and system cost are still a challenge to gain major consumer acceptance. Infineon offers benchmark solutions and represent an outstanding choice to overcome this hurdle. ICB2FL03 G SO-16 small body 650V single and series ICB1FL01 G SO-19 wide body 900V Single, series and parallel ICL8001G / ICL8002G / ICLS8082G for Dimming Applications Low Voltage Package Driver capability Lamp connection Applications ICB2FL03 G are designed for off-line LED lighting applications with high efficiency requirements such as replacement lamps (40/60/100W), LED tubes, luminaires and downlights. Infineon provides a single stage flyback solution with PFC and dimming functionality. Innovative primary control techniques combined with accurate PWM generation for phase cut dimming enable solutions with significant reduced component count on a single sided driver PCB for smallest form factor. Benefits ICL8001G simplifies LED driver implementation ICL8002G is optimized for best possible dimming performance ICLS8082G integrates CoolMOS™ switch High Voltage C11 VIN VR ZCV VCC ICL 8001G Continuous Mode DIM Control PFC N.C. PWM-Control Protection Gate Driver GND HV Start-Up Cell R19 Q1 R17 L1 VIN R5 C1 L2 C12 C17 R6 R3 CS N1 N3 D5 VLED D6 R2 N2 BR1 VR ZCV Continuous Mode DIM Control PFC C5 GND Drain VCC Start-Up Cell PWM-Control Protection Gate Driver GND C25 R6 C15 C18 ICLS8082G GD D21 T1 R1 VIN Detection IGBT ICLS8082G VLED Gate Power ICs ICL8001G Silicon Carbide Features Primary side flyback or buck control with integrated PFC and phase angle dimming Optimized for trailing- and leading-edge dimmers Integrated HV startup cell for short time to light Best in class BOM for dimmable LED bulbs High and stable efficiency over wide dimming range – Good line regulation capabilities based on digital foldback correction – Low external part count for simplified designs and short-time to market – Cycle-by-cycle peak current limitation Built-in digital soft-start Auto restart mode for short circuit protection Adjustable latch-off mode for output overvoltage protection CS R4 Packages GND 100 101 Linear Current Regulators deploys fixed frequency operation mode with integrated power factor control for off-line LED lighting applications. Applied innovative primary control techniques result in excellent system efficiencies with significant reduced external component count. The integrated CoolMOS™ simplifies designs and enables compact applications for integration in standard screw-in sockets and LED luminaires. BCR401W / BCR402W / BCR401U / BCR402U / BCR405U Nominal Power (± 15%) 230V VAC in 90V VAC in 12W 5W 17W 9W 17W 9W 26W 15W 24W 12W T1 R2 C7 R6 VAC in C1 BR1 C3 C2 BCR 401U BCR 401W BCR 402U BCR 402W BCR 405U 7 VCC Vs (min) Vs (max) Iout (typ) Iout (max) Package Ptot (max) ∆(Iout)/ Iout 1.4V+UfLED 1.2V+UfLED 1.4V+UfLED 1.4V+UfLED 1.4V+UfLED 40V 18V 40V 18V 18V 10mA 10mA 20mA 20mA 50mA 65mA 60mA 60mA 65mA 65mA SC74 SOT343 SC74 SC343 SC343 750mW 500mW 750mW 500mW 750mW 1.0%/V 2.0%/V 1.0%/V 2.0%/V 1.0%/V High Voltage Supply voltage 12 VDC VLED LED driver BCR 401/402 D4 C6 L1 PG-DIP-8 PG-DIP-8 PG-DSO-12 PG-DIP-8 PG-DIP-7 D6 C8 + D5 Package Features and benefits Output current from 10mA to 65mA (adjustable by external resistor) Supply voltage up to 24V (BCR401W, BCR402W) and up to 40V (BCR401U, BCR402U, BCR405U) Reduction of output current at high temperature, contributing to long lifetime LED systems Easy to use Very small form factor packages with up to 750mW max. power handling capability Silicon Carbide ICLS6021J ICLS6022J ICLS6022G ICLS6023J ICLS8023Z RDS(on) [Ω] 6.45 4.70 4.70 1.70 2.26 The advantage versus discrete semiconductors is: Reduced part count and assembly effort Pretested output current Defined negative temperature co-efficient protection IGBT VGS [V] 650 650 650 650 800 The advantage versus resistor biasing is: Long lifetime of LEDs due to constant current in each LED string Homogenous LED light output independent of LED forward voltage binning, temperature increase and supply voltage variations See application Note AN182 for details on replacing resistors Features Single stage flyback or buck, primary control with PFC, flyback, fixed frequency operation Highly efficient - system efficiency up to 84%, power factor > 70% Dimmer safe operation Outperforms worldwide regulatory requirements Minimized external component count for smallest form factor and maximum reliability Isolated driver output for efficient thermal management Multiple safety functions for full system protection in failure situations Partnumber The BCR40x family is the smallest size and lowest cost series of LED drivers. These products are perfectly suited for driving low power LEDs in General Lighting applications. Thanks to AEC-Q101 qualification, it may also be used in Automotive applications such as brake lights or interior. Low Voltage Benefits Fast and simple designs at lowest BOM cost, also meeting future more stringent performance requirements Integrated CoolMOS™ switch Applications ICLSx-Series for Non-Dimming Applications Control circuit Rint 4 5 D D RSENSE (optional) Sense L2 ICLSx-Series 1 SS Control PWM-Control R3 C4 C5 GND 8 CS 3 Power ICs Q1 2 FB R7 LEDs Packages ON/OFF 102 103 DC/DC Switch Mode LED Drivers The BCR32x and BCR42x LED drivers are dedicated linear regulators for 0.5W LEDs with a maximum output current of 250mA. They are optimized in terms of cost, size and feature set for medium power LEDs in General Lighting applications. Thanks to AEC-Q101 qualification, it may also be used in Automotive applications such as brake lights or interior. ILD1151 / ILD2035 / ILD4001 / ILD4035 / ILD4120 / ILD4180 + – Vs (min) Vs (max) Iout (typ) Iout (max) Package Ptot (max) ∆(Iout)/ Iout 1.4V+UfLED 1.4V+UfLED 1.4V+UfLED 1.4V+UfLED 24V+UfLED 24V+UfLED 40V+UfLED 40V+UfLED 250mA 250mA 150mA 150mA 300mA 300mA 200mA 200mA SC74 SC74 SC74 SC74 1.000mW 1.000mW 1.000mW 1.000mW 1.0%/V 1.0%/V 1.0%/V 1.0%/V VS Iout (typ) Low Voltage Features and benefits Wide input voltage range Scalability in output current from 150mA up to multiple amperes Alternative dimming concepts: Digital or analog Over voltage and over current protection Smart thermal protection for ILD2035, ILD4035 and ILD4120 contributing to longer LED lifetime ILD1151 supports boost, buck-boost and SEPIC topologies Vs (min) Vs (max) Iout (max) Package Dimming Topology fsw ILD 1151 4.5V 45V 90.0mA 3.000mA SSOP-14 analog/ digital ILD 4001 4.5V 42V 10.0mA ILD 2035 8.0V 22V 350mA 3.000mA DSO-8-27 analog/ digital 400mA SC74 - ILD 4035 4.5V 40V 350mA 400mA ILD 4120 4.5V 40V ILD 4180 4.75V 45V SC74 analog/ digital 1.200mA 1.200mA DSO-8-27 analog/ digital 1.800mA 1.800mA DSO-8-27 digital High Voltage BCR 320U BCR 321U BCR 420U BCR 421U The ILD series are switch-mode LED drivers for high power LEDs. They combine protection features that contribute to the lifetime of LEDs with the flexibility in output current range from 150mA up to multiple amperes. The new ILD series include LED driver ICs with integrated power stage as well as with external MOSFET achieving up to 98% driver efficiency across a wide range of general lighting applications. ILD2035, ILD4035, ILD4120 and ILD4180 are buck LED regulators. ILD4001 is a buck LED controller and ILD1151 is a multi-topology LED controller. Features boost, adjustable Multi topology controller, buckboost 100constant current or constant SEPIC 500kHz voltage mode, over voltage, over current, short on GND protection hysteretic < 500kHz thermal protection buck hysteretic < 500kHz smart thermal protection buck hysteretic < 500kHz smart thermal protection, over buck voltage, over current protection hysteretic < 500kHz smart thermal protection, over buck voltage, over current protection fixed 370kHz over voltage, over current frequency protection, constant current or buck constant voltage mode Silicon Carbide Features and benefits Output current from 10mA up to 300mA for BCR32x (200mA for BCR42xU), adjustable by external resistor Supply voltage up to 40V for BCR42x (24V for BCR32x) Direct microcontroller interface for PWM dimming with BCR321U/BCR421U Reduction of output current at high temperature, contributing to long lifetime LED systems Easy to use Very small form factor packages with up to 1.000mW max. power handling capability Applications BCR420U / BCR321U / BCR420U / BCR421U RSENSE (optional) Von: Supply Voltage C IGBT BCR 320 BCR 420 Von: BCR 321 BCR 421 µC Analog Voltage VSupply Enable Schottky diode e.g. BAS 3020B RSENSE Digital PWM Signal ISupply PWM GND IOUT GND IOUT Power ICs ILD 4120 Packages L 104 105 1EDI30J12CL and 1EDI30J12CP Single channel isolated gate driver Same functions and features as 1ED020I12-B2 Basic isolation according to EN60747-5-2, recognized under UL1577 Adjustable two level turn-off function Desaturation detection with 500μA Infineon has developed the Direct Drive JFET concept to enable normally-on SiC JFETs to be driven at best possible efficiency and as safe as normally-off switches. This isolated EiceDRIVER™ dedicated for normally-on SiC JFETs comes with special features and benefits: 1ED020I12-FT Single channel isolated gate driver Same functions and features as 1ED020I12-BT Functional isolation of 1200V 2ED020I12-F2 Single channel driver IC with Coreless Transformer (CT) technology Galvanic isolation, ±1200V UVLO 16 - 18V, optimized for Infineon’s SiC JFET discretes and power modules Bootstrap mode (UVLO 8 - 10V, logic, MOS driver capability, indicator output) Safe turn off during start up and power supply failures 3A rail-to-rail output Extremely low propagation delay of typ. 80ns Max.Tj=150°C Green Packages DSO-16-20 (150mil) and DSO-19-4 (300mil) Low Voltage Single channel isolated gate driver Basic isolation according to EN60747-5-2, recognized under UL1577 Fully functional at transient +/- 1420V and static voltages of +/-1200V High voltage side status feedback 2A sink and source rail-to-rail output Max. Tj = 150°C Package SO16 300mil Protection functions: – Enchanced desaturation detection – Active Miller clamp – Under voltage lockout – Shut do wn – Watchdog timer 1ED020I12-BT Typical application 1EDI30J12CL/CP High Voltage 1ED020I12-B2 Applications Driver ICs +5V to SGND VCC1 CVCC JFDrv VCC2 SGND Controller GND1 MDrv IN VReg EN CLJFG CVReg CVEE2 Silicon Carbide Single channel isolated gate driver Same functions and features as 1ED020I12-B2 Functional isolation of 1200V LV MOSFET 1ED020I12-F2 SiC JFET Drain cascode Dual channel isolated gate driver Same functions and features as two times 1ED020I12-F2 Package SO36 300mil VEE2 BSEN 1EDI30J12CL/CP -25V to VCC2 Source cascode Typical application 1ED020I12-F2 +5V +15V VCC2 /FLT CDESAT RST +5V CVCC2 DDESAT Voltage RDS(on) Sales name JFET Package Driver Driver Package LV MOS LV MOS Package GATE VCC GND IN- RG 1200 CLAMP 1ED020I12-F2 1200 35 50 70 100 70 100 IJW120R035T1 IJW120R050T1 IJW120R070T1 IJW120R100T1 IJC120R070T1 IJC120R100T1 TO247 TO247 TO247 TO247 Bare die Bare die 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP 1EDI30J12CL/CP DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 DSO-16-20/19-4 BSC030P03NS3 G BSC030P03NS3 G BSC030P03NS3 G BSC030P03NS3 G IPC099P03N IPC099P03N SuperSO8 SuperSO8 SuperSO8 SuperSO8 Bare die Bare die Packages IN+ DProt GND2 VEE2 Power ICs To control logic CoolSiC 1200V JFET portfolio and recommended driver / LV MOS for Direct Drive Topology RDESAT DESAT IGBT CVCC2 RDY 106 107 200V and 600V 3-phase gate driver Ultra fast integrated bootstrap diode Fully functional at neg. transient voltages down to -50V (500ns) Programmable restart after over current protection Shut down of all outputs in case of UVLO, OCP Package SO28 300mil (600V) and package TSSOP28 (200V) Protection functions: – Over current protection (OCP) – Hard ware input interlocking – Under voltage lockout (UVLO) – Fixed hard ware dead time of Typical application 6EDL04I06PT high side and low side – Enable function VCC – Pin compatible variants HIN1,2,3 of first generation available Applications 650V isolated high side half bridge gate driver Galvanic isolation of high side driver 2A sink current, 1 A source current Fully functional at transient and static voltages of +/-650V Matched delay times of high side and low side Max. Tj = 150°C Package SO18 300mil Protection function: – Hardware input interlocking – Under voltage lockout LIN1,2,3 FAULT EN RRCIN CRCIN Low Voltage 1200V Isolated high side half bridge gate driver Galvanic isolation of high side driver 2A sink current, 1 A source current Fully functional at transient and static voltages of +/-1200V Integrated operational amplifier and comparator Matched delay times of high side and low side Max. Tj = 150°C Package SO18 300mil Protection function: – Hardware input interlocking – Under voltage lockout – Shut down function 6ED family – 2nd Generation DC-Bus VCC HIN1,2,3 LIN1,2,3 FAULT EN VCC HIN1,2,3 VB1,2,3 High Voltage 2ED020I06-FI LIN1,2,3 HO1,2,3 FAULT To Load VS1,2,3 EN LO1,2,3 RCIN COM ITRIP VSS 6EDL04I06PT Silicon Carbide 2ED020I12-FI R Sh VSS 1200 V 600 V 200 V 1ED020I12-F2 1ED020I12-B2 1ED020I12-FT 1ED020I12-BT 2ED020I12-F2 2ED020I12-FI 2ED020I06-FI 6ED003L06-F2 6EDL04I06NT 6EDL04I06PT 6EDL04N06PT 6ED003L02-F2 6EDL04N02PR Packages Topology Io+/- PG-DSO-16 PG-DSO-16 PG-DSO-16 PG-DSO-16 PG-DSO-36 PG-DSO-18 PG-DSO-18 PG-DSO-28 PG-DSO-28 PG-DSO-28 PG-DSO-28 PG-TSSOP-28 PG-TSSOP-28 Single Single Single Single Dual Half Bridge Half Bridge 3-Phase 3-Phase 3-Phase 3-Phase 3-Phase 3-Phase 2.0 - 2.0 A 2.0 - 2.0 A 2.0 - 2.0 A 2.0 - 2.0 A 2.0 - 2.0 A 1.0 - 2.0 A 1.0 - 2.0 A 180 - 380 mA 180 - 380 mA 180 - 380 mA 180 - 380 mA 180 - 380 mA 180 - 380 mA Turn On Propagation Delay (max) 195.0 ns 195.0 ns 2,000.0 ns 2,000.0 ns 195.0 ns 105.0 ns 105.0 ns 800.0 ns 800.0 ns 800.0 ns 800.0 ns 800.0 ns 800.0 ns Tj (max) 150.0 degC 150.0 degC 150.0 degC 150.0 degC 150.0 degC 150.0 degC 150.0 degC 125.0 degC 125.0 degC 125.0 degC 125.0 degC 125.0 degC 125.0 degC Safety UVLO_ON_max Fault Reporting Isolation Typ* Basic Basic - 12.6 V 12.6 V 12.6 V 12.6 V 12.6 V 13.5 V 13.5 V 12.5 V 12.5 V 12.5 V 9.8 V 12.5 V 9.8 V DESAT DESAT DESAT DESAT DESAT OCP ITRIP ITRIP ITRIP ITRIP ITRIP ITRIP Shutdown / Enable Input Logic Type Interlock Two Level Turn Off /RST /RST /RST /RST /RST /SD /SD EN EN EN EN EN EN pos/neg pos/neg pos/neg pos/neg pos/neg pos pos neg neg pos pos neg pos – – – – – – – – – – – – – – – – Power ICs Products IGBT HV Gate Driver ICs Product Type Packages * Certified according to DIN EN 60747-5-2 108 109 Top and bottom side cooling of SMD devices ThinPAK new leadless SMD package for high voltage MOSFETs For LV MOSFETs different SMD packages like SuperSO8 and CanPAK™ are available. If the cooling system is designed for main heatflow to the PCB both packages will show similar thermal performance. If the main heat flow is to the top side the CanPAK™ is the better choice since the thermal resistance to the top side is lower (Rth_top_CanPAK ~ 1 K/W, Rth_top_SuperSO8 ~ 20 K/W). Bottom side cooling Top side cooling top Heatsink top 60% footprint reduction – 80% height reduction Package D2PAK bottom Thermal performance CanPAK™ ~ SuperSO8 PPCB < Pheatsink bottom Thermal performance CanPAK™ > SuperSO8 10 x 15 x 4.4mm³ Example: High performance Server (PCB: 8 layer, 70 μm) ThinPAK High Voltage PPCB > Pheatsink 8 x 8 x 1mm³ Example: Motherboard (PCB 4 layer, 35 μm) with high performance heatsink Silicon Carbide PCB The new package features a very small footprint of only 64 mm2 (vs. 150 mm2 for the D2PAK) and a very low profile with only 1 mm height (vs. 4.4 mm for the D2PAK). This significantly smaller package size with ist benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power-density driven systems. A well designed thermal system is required to achieve high power handling capability. The recommended design is a thin PCB with may vias and a heatsink attached to the backside of the PCB. A high number of thermal vias is needed to reduce the thermal conduction resistance through the board. Low Voltage Applications Packages Thermal cooling system for ThinPAK 8x8 ThinPAK 8x8 PCB with thermal vias Packages Power ICs IGBT Thermal Interface material heatsink 110 111 Applications PowerStage 3x3 and PowerStage 5x6 Save space, minimize losses, boost efficiency PowerStage 3x3 and PowerStage 5x6 are leadless SMD packages, which integrate the low-side and high-side MOSFETs of a synchronous DC/DC converter into a 3.0x3.0 mm2 or 5.0x6.0 mm2 package outline.Designers are able to shrink their designs up to 85% by replacing two separate discrete packages such as SO-8 or SuperSO8 with this new package. High Voltage Low Voltage Both, the small outline and the interconnection of the two MOSFETs within the package minimize the loop inductance which boosts efficiency. With the new OptiMOS™ technology PowerStage 3x3 and PowerStage 5x6 achieve a peak efficiency of 93.5%. PowerStage 3x3 can handle an application current up to 12.5A and PowerStage 5x6 up to 30A. Silicon Carbide CoolMOS™ in ThinPAK 8 x 8 The new leadless SMD package for CoolMOS™ The new IGBT RCD technology in combination with an efficient cooling system allows to use small SMD packages which enable to build compact systems with increased power density. In order to improve the heat dissipation, thermal vias are integrated in the PCB under the device case which results in a low thermal resistance to the opposite side of the PCB. A heatsink complements the cooling system. Isolation to the heatsink is realized with a thermal foil. With this cooling system power dissipation up to 7 to 10 W / IGBT is achievable which corresponds to ~ 2 kW application systems. Infineon Technologies introduces the ThinPAK 8 x 8, a new leadless SMD package for HV MOSFETs. The new package has a very small footprint of only 64 mm² (vs. 150 mm² for the D2PAK) and a very low profile with only 1 mm height (vs. 4.4mm for the D2PAK). This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power-density driven designs. ■ ■ Power ICs Key features and benefits of Infineon’s ThinPAK: ■ Extremely small footprint (8 x 8 mm²) and very low profile (1 mm) ■ 60 % reduced board space consumption and highly increased power density ■ Very easy to use and short commutation loop ■ Separate driver source pin and lowest parasitic inductance IGBT New IGBT technology RCD allows highest power density with small SMD packages Very smooth switching waveform Halogen free mold compound and RoHS compliant 112 [ www.infineon.com/coolmos ] Packages For further information please visit our website: 113 Package (JEITA-code) X LxWxH PIN-Count 15.5 x 6.5 x 2.3 IPAK SL (TO-251 SL) 3 10.7 x 6.5 x 2.3 I2PAK (TO-262) 3 25.1 x 10 x 4.4 TO-220 real 2pin 2 29.15 x 10.0 x 4.4 TO-220 2pin 2 29.1 x 9.9 x 4.4 TO-220 3pin 3 29.15 x 10.0 x 4.4 TO-251 Package Outline 6.5 +0.23 -0.15 A 21.7 x 9.9 x 4.4 6 26.1 x 9.9 x 4.4 3 40.15 x 15.9 x 5.0 DPAK (TO-252) 3 9.9 x 6.5 x 2.3 Reverse DPAK (Rev. TO-252) 3 9.7 x 6.6 x 2.34 4.96 ±0.26 5.41±0.37 6 TO-247 2.3 +0.11 -0.14 B 0.9 -0.44 0.1 9.3 +0.35 -0.41 29.6 x 10.5 x 4.7 TO-220-6-47 6.22 -0.25 3 TO-220-6-46 1 +0.37 -0.11 5.4 +0.1 -0.45 TO-220 FullPAK Applications IPAK (TO-251) 3 All Dimensions in mm Low Voltage Packages DPAK 5pin (TO-252 5pin) 5 9.9 x 6.5 x 2.3 D2PAK (TO-263) 3 15.0 x 10.0 x 4.4 D2PAK 7pin (TO-263 7pin) 7 15.0 x 10.0 x 4.4 SO-8/SO-8 dual 8 5.0 x 6.0 x 1.75 SO-16/12 12 10.0 x 6.0 x 1.75 SO-14 14 0.5 +0.1 0.9 ±0.25 8.75 x 6.0 x 1.75 0.25 M A B 3 x 0.75 +0.14 -0.11 2.29 1.0 +0.14 -0.10 4.57 SO-16 16 10.0 x 6.0 x 1.75 SO-18 18 12.8 x 10.3 x 2.65 SO-19 19 12.8 x 10.3 x 2.65 SO-20 20 12.8 x 10.3 x 2.65 SC59 3 3.0 x 2.8 x 1.1 High Voltage All metal surfaces tin plated, except area of cut. SOT-23 3 2.9 x 2.4 x 1.0 Marking Layout 4.5 x 4.0 x 1.5 SOT-223 4 6.5 x 7.0 x 1.6 SOT-323 3 2.0 x 2.1 x 0.9 SOT-363 6 2.0 x 2.1 x 0.9 TSOP-6 6 2.9 x 2.5 x 1.1 S3O8 8 3.3 x 3.3 x 1.0 H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Manufacturer TISON (PowerStage 5x6) 8 5.0 x 6.0 x 1.0 WISON (PowerStage 3x3) 8 3.0 x 3.0 x 0.8 SuperSO8 8 5.15 x 6.15 x 1.0 SuperSO8 dual 8 5.15 x 6.15 x 1.0 VSON (ThinPAK) 4 8.0 x 8.0 x 1.0 Production lot code Pin 1 CanPAK™ S-Size 6 Type code Date code (YWW) 1234567 AA R Silicon Carbide SOT-89 3 4.8 x 3.8 x 0.65 Packing 6.3 x 4.9 x 0.65 TDSON-10 10 3.0 x 3.0 x 0.9 DIP-7 7 9.52 x 8.9 x 4.37 DIP-8 8 9.52 x 8.9 x 4.37 DIP-14 14 19.5 x 8.9 x 4.37 DIP-20 20 Pieces/Tube: 75 IGBT CanPAK™ M-Size 7 24.6 x 9.9 x 4.2 (7) Window 33.5 -0.5 TSSOP-48 12.5 x 6.1 x 1.1 36 15.9 x 11.0 x 3.5 IQFN-40 40 6.0 x 6.0 x 0.8 TSSOP-28 28 9.7 x 6.4 x 1.2 DSO-28 28 18.1 x 10.3 x 2.65 VQFN-68 68 10.0 x 10.0 x 0.9 Power ICs 48 DSO-36 114 All dimensions in mm Packages All products are available in green (RoHS compliant). 115 TO-251-3 DPAK 0.1 0.25 M A B 0.1 0.9 ±0.25 0.5 +0.08 -0.04 0.9 ±0.25 0...0.15 0.75 +0.14 -0.11 0.25 M A B 0.9 +0.24 -0.1 3 x 0.75 +0.14 -0.11 0.9 +0.08 -0.44 Low Voltage 3.5 ±0.1 0.5 +0.39 -0.04 B 4.96 ±0.26 6.22 -0.25 B 5 ±0.1 2.3 +0.11 -0.14 +0.1 5.4 -0.4 1 +0.25 -0.10 2.3 +0.09 -0.12 A 9.9 +0.58 -0.50 5.4 +0.1 -0.45 1 ±0.1 6.22 -0.25 5.24 ±0.2 1±0.1 6.5 +0.23 -0.15 6.5 +0.23 -0.10 1.44 ±0.26 A Applications Package Outline 5.43 ±0.41 0.8 +0.2 -0.29 Package Outline 0.5 +0.1 -0.04 2.29 4.57 2.29 4.57 Foot Print High Voltage All metal surfaces tin plated, except area of cut. 5.8 1.2 5.76 Production lot code Pin 1 Silicon Carbide Type code Date code (YWW) 1234567 AA R Marking Layout Packing Type code Date code (YWW) 1234567 AA M G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Manufacturer Pieces/Tube: 75 Production lot code Pin 1 IGBT G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Manufacturer 2.2 10.6 6.4 Marking Layout Packing (7) Window Reel ø330mm = 2.500 Pieces/Reel 0.3 8 6.9 Power ICs 10.5 16 ±0.3 33.5 -0.5 2.5 2.7 All dimensions in mm Packages All dimensions in mm 116 117 Reverse DPAK DPAK 5pin 0.51 MIN. 4.56 0.1 0.25 A B 6.4 2.2 2.2 10.6 6.4 0.8 Marking Layout 1234567 AA H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Manufacturer Pin 1 Type code Date code (YWW) Pin 1 Production lot code Packing Type code Date code (YWW) 1234567 AA M H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Manufacturer IGBT Marking Layout Silicon Carbide 5.36 Production lot code Packing Reel ø330mm = 2.500 Pieces/Reel 0.3 0.3 8 6.9 10.5 16 ±0.3 10.5 16 ±0.3 8 6.9 2.5 2.7 Power ICs 10.6 5.8 1.2 5.76 2.5 2.7 All dimensions in mm Packages All dimensions in mm M Foot Print 5.8 Reel ø330mm = 2.500 Pieces/Reel 0.5 +0.08 -0.04 5 x 0.6 ±0.1 High Voltage Foot Print 5 1.14 0.51 +0.07 -0.05 2 x 2.29 1 ±0.1 0...0.15 0.8 ±0.15 0.6 ±0.09 1 0.5 A 6 0.15 MAX. per side 0.0...0.15 0.8 +0.09 -0.17 0.25 M A B 1 ±0.1 0.89 +0.09 -0.43 B 5.4 ±0.1 (4.24) 2.34 +0.07 -0.18 5.03 ±0.18 9.98 ±0.5 6.22 -0.2 5.25 ±0.25 9.7 +0.78 -0.3 0.9 ±0.25 2.3 +0.05 -0.10 6.5 +0.15 -0.10 5.43 ±0.41 +0.14 6.1 +0.12 -0.13 1 -0.10 6.6 +0.13 -0.20 Applications Package Outline Low Voltage Package Outline 118 119 TO-220 2pin TO-220 3pin Package Outline +0.36 4.4 ±0.1 2x 0.75 ±0.1 5.08 0.9 ±0.25 0.25 M A B C M A B Low Voltage 9.25 -0.74 2.4 +0.32 -0.25 High Voltage 2 x 2.54 +0.11 0.75 -0.10 3x 0.25 1.05 ±0.1 Marking Layout Pin 1 12345678 Date code (YWW) Production lot code G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Mold chassis Identification code Manufacturer A 39 Pin 1 Packing Packing Pieces/Tube: 50 Pieces/Tube: 50 Type code Date code (YWW) Production lot code H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Mold chassis Identification code Silicon Carbide A 39 AA Manufacturer Type code IGBT 12345678 AA Marking Layout +0.10 0.5 -0.17 1.18 ±0.23 2.4 +0.20 0.1 4.8 MAX. 0.5 ±0.1 0...0.15 +0.17 4.4 -0.10 +0.13 1.27 -0.10 +0.15 17±0.3 15.65 -0.84 ± 3.5 ±0.2 +0.30 0.36 M A B +0.19 3.7 -0.1 2.8 ±0.2 1.27 ±0.1 0.05 2.4 ±0.1 B +0.1 8.5 -2 12.95 -0.76 2.8 ±0.2 B 0...0.3 C A +0.36 9.9 -0.30 13.5 ±0.5 12.95 17 ±0.3 3.7 -0.15 15.65 ±0.3 10 -0.30 A 13.5 ±0.5 10 ±0.2 9.9 ±0.2 8.5 1.29 ±0.1 Applications Package Outline Window (7) (7) Window 33.5 -0.5 Power ICs 33.5 -0.5 All dimensions in mm Packages All dimensions in mm 120 121 TO-220 FullPAK TO-220-6-46 2.7 ±0.15 B 8.6 ±0.3 1) 7.62 0...0.15 0.25 M 0.5 ±0.1 A B 6 x 0.6 ±0.1 2.4 5.3 ±0.3 4 x 1.27 1.08 ±0.43 2.54 0.381 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut. A B M 8.4 ±0.3 Marking Layout Type code Date code (YWW) Production lot code H = RoHS compliant + halogen-free G = Green Product / RoHS compliant 1234567890 AA Manufacturer Pin 1 a 39 AA Manufacturer Type code Date code (YWW) H = RoHS compliant + halogen-free G = Green Product / RoHS compliant 12345678 Pin 1 Mold chassis Identification code Packing Pieces/Tube: 25 Pieces/Tube: 50 IGBT Fab code Packing Silicon Carbide Marking Layout High Voltage 3x 0.7 +0.15 -0.05 Low Voltage 2.57 ±0.15 1.3 +0.1 -0.02 0.05 3.3 ±0.15 -0.152 1.14 ±0.19 4.4 A 8 12.1±0.3 45° 9.681 +0.149 -0.151 0.36 M B A +0.2 13.6 ±0.15 1.23 ±0.28 0.5 +0.13 -0.10 0.99 ±0.34 10.2 ±0.3 6.6 3 +0.2 -0.05 A 3.3 -0.15 15.99 -0.14 +0.16 10.5 ±0.15 9.9 7.5 4.7 ±0.15 (0.8) B Applications Package Outline 9.2 ±0.2 Package Outline Window 35 ±0.2 Power ICs 33 ±0.4 5.6 ±0.4 13 ±0.2 Window All dimensions in mm Packages All dimensions in mm 122 123 TO-220-6-47 TO-247 Package Outline +0.23 0.25 6 x 0.6 ±0.1 M +0.06 5.94 -0.45 4.39 ±0.71 0.5 ±0.1 A B 2.4 5.3 ±0.3 4 x 1.27 +0.15 ø3.60 ±0.1 0.61 M B A 4.32 -0.22 7.62 0...0.15 0.25 M A B 8.4 ±0.3 +0.41 0.62 ± 2.03 ±0.13 3 ±0.13 2.4 ±0.14 +0.46 2.92 -0.05 High Voltage 5.44 Marking Layout Type code Date code (YWW) Production lot code H = RoHS compliant + halogen-free G = Green Product / RoHS compliant 1234567890 a 39 AA Manufacturer Pin 1 Type code Manufacturer Mold chassis Identification code G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant Date code (YWW) 123456789 AA Pin 1 Packing Pieces/Tube: 50 Pieces/Tube: 25 Fab code IGBT Packing Silicon Carbide Marking Layout 1.2 ±0.13 2 -0.10 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut. 5.02 ±0.19 +0.13 2.03 -0.18 Low Voltage 8.6 ±0.3 1) 20.9 0.05 9.2 ±0.2 3.7 -0.15 B B A 1.8 ± 0.8 20.06 ±0.26 2.8 ±0.2 1.3 +0.1 -0.02 15.9 -0.20 13.63 ±0.53 6.17 ±0.13 1.2 -0.25 +0.15 4.4 16.95 ±0.7 A 13 15.6 ±0.3 17.5 ±0.3 9.9 ±0.2 9.5 ±0.2 7.5 6.6 Applications Package Outline 7 13 ±0.2 Window 39 Power ICs 35 ±0.2 All dimensions in mm Packages All dimensions in mm 124 125 I2PAK D2PAK Package Outline Applications Package Outline +0.17 10 -0.2 A +0.1 +0.13 +0.15 0.1 -0.1 1.05 ±0.1 3 x 0.75 +0.114 -0.100 0.884 ±0.234 0.254 M A B M A B 1.5˚ ±6.5˚ 5.08 +0.318 2.4 -0.250 2 x 2.54 0.25 2.54 0.5 +0.10 -0.17 +0.15 0.5 -0.17 0.75 ±0.1 1.05 +0.043 -0.100 Low Voltage 1.175 ±0.225 13.5 ±0.5 4.55 +0.25 +0.3 2.7 -0.41 +0.48 1.3 -0.3 +0.35 1.27 -0.1 7.55 -0.45 15 -0.39 +0.88 9.25 +0.20 -0.741 B 8.5 -2 +0.2 1.27 +0.13 -0.10 1 +0.727 4.4 -0.1 +0.31 4.4 +0.172 -0.100 7.55 -0.65 +0.1 8.5 -2 B A 9.25 -0.74 1 +0.6 -0.3 10 +0.363 -0.300 Foot Print High Voltage All metal surfaces tin plated, except area of cut. 10.8 4.6 16.15 9.4 Marking Layout 1.35 Type code Pin 1 Silicon Carbide Date code (YWW) Production lot code H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Mold chassis Identification code A 39 AA Manufacturer 3.75 Marking Layout 12345678 Manufacturer AA A 39 Packing Pieces/Tube: 50 Pin 1 Type code Date code (YWW) Production lot code G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Mold chassis Identification code IGBT 12345678 Packing (7) Window Reel ø330mm = 1.000 Pieces/Reel 0.3 12 10.3 Power ICs 4.75 4.9 All dimensions in mm Packages All dimensions in mm 24 ±0.3 16.1 33.5 -0.5 126 127 D2PAK 7pin SO-8 Package Outline Applications Package Outline 6 x 0.6 ±0.1 0.25 6 x 1.27 M A B +0.15 0.5 -0.17 1.5˚ ±6.5˚ 5 Index Marking 1 4 5 -0.21) 8˚ MAX. .03 C 0.64 ±0.25 0.25 M D C 8x 8 0.2 +0.05 -0 1.75 MAX. 4 -0.2 19˚ MAX. 6 ±0.2 Low Voltage 0.75 ±0.25 0.1 8x 0.41 +0.1 -0.06 +0.3 2.7 -0.41 +0.2 1.27 +0.15 0.1 -0.1 +0.48 7.55 -0.65 +0.35 B 0.1 1.3 -0.3 1 -0.3 +0.6 8.5 -2 9.25 -0.74 +0.88 15 -0.39 +0.13 1.27 -0.1 A +0.1 0.1 MIN. +0.31 10 -0.2 1.5 +0.15 -0.25 0.33 +0.17 -0.10 x 45˚ +0.17 4.4 -0.1 D Index Marking (Chamfer) Foot Print High Voltage Foot Print 10.8 1.31 ±0.1 4.6 5.69 ±0.1 16.15 9.4 0.65 ±0.1 1.27 0.47 Marking Layout Silicon Carbide 0.8 Marking Layout Type code Date code (YWW) Production lot code A 39 1234567 Pin 1 Marking G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Packing Reel ø330mm = 2.500 Pieces/Reel Pieces/Tube: 100 0.3 5.2 16.1 6.4 12 ±0.3 24 ±0.3 8 1.75 Power ICs 0.3 12 4.1 Packing Type code Date code (YYWW) Mold chassis Identification code Pin 1 Reel ø330mm = 1.000 Pieces/Reel 123456 IGBT Manufacturer AA 12345678 7.7 2.1 10.3 4.9 All dimensions in mm Packages All dimensions in mm 4.75 128 129 SO-16/12 SO-14 1 M 10 -0.2 6 ±0.2 14 Applications x 45˚ .01 8˚ C 0.1 0.2 M A C 14x 0.41 +0.1 -0.08 0.64 ±0.25 6 ±0.2 8 D C 12x 7 1 8.75 -0.2 1) 6 A Index Marking D Foot Print 5.69 5.69 1.31 0.65 1.31 0.65 High Voltage Foot Print 1.27 Silicon Carbide 1.27 Marking Layout Marking Layout Date code (YYWW) Date code (YYWW) Type code Mold compound code Manufacturer 1234567890123 1234 LMC XXXXXXXXXXX Mold compound code 12345678901 LMC 12 XXXXXXXXXXX Manufacturer Lot number Assembly site code (L for AIT) Pin 1 Marking Lot number Assembly site code G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Packing Reel ø330mm = 2.500 Pieces/Reel 0.3 8 9.5 4.1 10.3 16 ±0.3 6.5 Pieces/Tube: 50 7.7 Power ICs Pieces/Tube: 50 0.3 8 16 ±0.3 Reel ø330mm = 2.500 Pieces/Reel 4.1 Packing G = Green Product / RoHS compliant H = RoHS compliant + Halogen-free Pin 1 Marking IGBT Type code 7.7 1.8 2.3 6.5 1.8 2.3 All dimensions in mm Packages All dimensions in mm +0.08 -0.17 0.2 +0.05 -0 0.1 MIN. 1.75 MAX. .01 8˚ MAX. 0.64 ±0.25 7 12 Index Marking 0.1 2x 8.89 0.2 1.27 C 3.81 0.41 +0.1 -0.05 4 -0.2 0.33 4 -0.2 Low Voltage 1.27 0.33 x 45˚ 0.2 +0.05 -0 (1.5) 1.75 MAX. Package Outline 0.1 MIN. STAND OFF Package Outline 130 131 SO-16/12 SO-18 8˚ 8˚ 1.27 ±0.25 1) Seating Plane 18x 0.4 ±0.1 6 ±0.2 9 x 1.27 = 11.43 9 16 18 1 11 0.4 +0.87 10.3 ±0.3 Ejector Mark Depth 0.2 MAX. 8 1) 10 +0.06 -0.2 A Index Marking Index Marking 1 12.8 -0.2 10 1) Does not include plastic or metal protrusion of 0.15 mm max. Foot Print 5.69 9.73 1.31 1.67 0.65 0.65 High Voltage Foot Print 1.27 Silicon Carbide 1.27 Marking Layout Marking Layout Date code (YYWW) Type code Mold compound code Manufacturer 1234567890123 1234 LMC XXXXXXXXXXX Manufacturer Assembly site code (L for AIT) G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Pin 1 Marking 1234567890 1234567890 XXXXXXXXXXX Lot number G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Lot number Packing Pieces/Tube: 50 Reel ø330mm = 1.000 Pieces/Reel 13.3 24 ±0.3 4.1 16 ±0.3 10.3 6.5 0.3 12 0.3 8 7.7 Pieces/Tube: 39 Power ICs Reel ø330mm = 2.500 Pieces/Reel 6.5 -0.2 Packing Pin 1 Marking Date code (YYWW) IGBT Type code 15.4 1.8 2.3 10.9 2.7 3.2 All dimensions in mm Packages All dimensions in mm Applications +0.05 -0.03 0.64 Low Voltage C 0.2 M A C 16x 0.35 x 45˚ 7.6 -0.2 0.25 Gauge Plane 0.1 4 -0.2 1) 0.2 0.1 MIN. 1.75 MAX. 1.27 0.40 +0.11 -0.05 0.33 +0.17 -0.08 x 45˚ 2.65 MAX. Package Outline 0.2 -0.1 STAND OFF 2.45 -0.2 Package Outline 132 133 SO-19 SO-20 Index Marking 1 11 8˚ 20 Index Marking 1 11 12.8 -0.2 10 0.4 +0.87 10.3 ±0.3 1) Does not include plastic or metal protrusion of 0.15 max. per side Foot Print 9.73 9.73 1.27 Marking Layout Silicon Carbide 1.27 Marking Layout Type code Infineon 1234567890 1234567890 XXXXXXXXXXX Manufacturer 1234567890 1234567890 XXXXXXXXXXX Pin 1 Marking Type code Date code (YYWW) G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Lot number Packing 10.9 Pieces/Tube: 39 Reel ø330mm = 1.000 Pieces/Reel 12 0.3 13.3 24 ±0.3 15.4 10.9 2.7 3.2 Pieces/Tube: 39 Power ICs 0.3 13.3 24 ±0.3 12 6.5 -0.2 Reel ø330mm = 1.000 Pieces/Reel 6.5 -0.2 Packing Pin 1 Marking Date code (YYWW) G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Lot number IGBT Manufacturer 15.4 2.7 3.2 All dimensions in mm Packages All dimensions in mm 1.67 0.65 1.67 0.65 High Voltage Foot Print Applications 2.65 MAX. 0.2 -0.1 STAND OFF 2.45 -0.2 Seating Plane 20x 9 x 1.27 = 11.43 10 12.8 -0.2 1.27 1) 0.35+0.15 Low Voltage 19 0.4 +0.87 10.3 ±0.3 0.35 x 45˚ 7.6 -0.2 0.25 Gauge Plane 9 x 1.27 = 11.43 Seating Plane 19x 0.23 +0.09 1.27 0.4 ±0.1 0.25 Gauge Plane 2.65 MAX. 0.35 x 45˚ 7.6 -0.2 8˚ MAX. Package Outline 0.2 -0.1 STAND OFF 2.45 -0.2 Package Outline 134 135 SC59 SOT-23 Package Outline 0.4 +0.1 -0.05 1) 2 C 0.95 2 0.95 +0.1 0.15 -0.0 5 0.1 M 0.95 (0.55) 5 A 0...8˚ 1.9 0.2 0.25 M B C A M 1) Lead width can be 0.6 max. in dambar area SC59-PO V05 Foot Print 0.08...0.1 1.3 ±0.1 1 +0.2 acc. to DIN 6784 Low Voltage 2.8 +0.2 -0.1 0.45 ±0.15 3 3 +0.1 0.1 MAX. 10˚ MAX. 0.2 1.6 +0.15 -0.3 0.1 M B 10˚ MAX. 0.1 3x0.4 +0.05 -0.1 1 0.15 MAX. 1 ±0.1 0.15 MIN. 3 ±0.1 2.9 ±0.1 2.4 ±0.15 1.1 ±0.1 Applications Package Outline High Voltage Foot Print 0.8 0.8 1.2 0.9 0.9 1.3 1.3 0.9 0.9 0.8 1.2 Marking Layout Silicon Carbide SC59-FPR V05 Marking Layout Manufacturer Type code 123 Date code (MY) 12 S Type code Date code (MY) IGBT Pin 1 SC59-MK V01 Packing Reel ø180mm = 3.000 Pieces/Reel Reel ø330mm = 10.000 Pieces/Reel Reel ø180mm = 3.000 Pieces/Reel Reel ø330mm = 10.000 Pieces/Reel 0.2 4 0.2 0.9 Pin 1 3.18 1.32 Pin 1 3.15 8 2.65 8 3.28 2.13 4 Power ICs Packing 1.15 SC59-TP V04 All dimensions in mm Packages All dimensions in mm 136 137 SOT-89 SOT-223 Package Outline 1) 3.5 ±0.2 7 ±0.3 2.75 +0.1 -0.15 10˚ MAX. 3 1.5 1 0.35 ±0.1 0.45 +0.2 -0.1 3 B 0.15 M 3 2 2.3 0.7 ±0.1 B x3 4.6 0.2 B 0.25 M A 1) Ejector pin markings possible Foot Print Low Voltage 2 4 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 +0.2 acc. to DIN 6784 0.1 MAX. 3 ±0.1 1.6 ±0.2 0.2 MAX. 0.25 ±0.05 1.6±0.1 6.5 ±0.2 A 1.5 ±0.1 15˚ MAX. B 0.5 MIN. 4.5 ±0.1 45˚ Applications Package Outline 0.28 ±0.04 0...10˚ 0.25 M B Foot Print 2.0 0.8 0.8 Silicon Carbide 1.4 1.2 1.0 4.8 2.5 1.4 High Voltage 3.5 1.2 1.1 0.7 Marking Layout Marking Layout Pin 1 Manufacturer S 12 123456 Type code Pin 1 Date code (MY) Packing Packing Reel ø180mm = 1.000 Pieces/Reel Reel ø330mm = 4.000 Pieces/Reel Reel ø180mm = 1.000 Pieces/Reel Reel ø330mm = 4.000 Pieces/Reel 0.2 0.3 MAX. 8 4.6 7.55 12 8 Date code (YYWW) IGBT S G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Pin 1 1.6 Pin 1 6.8 1.75 All dimensions in mm Packages All dimensions in mm 4.3 Power ICs Type code 12 Manufacturer 123 138 139 Package Outline Package Outline 0.1 M A 2 Pin 1 marking 0.15 +0.1 -0.05 0.65 0.65 0.2 6 5 4 1 2 3 0.1 MAX. M 0.1 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.1 M 0.15 +0.1 -0.05 0.65 0.65 A 0.2 M A Foot Print High Voltage Foot Print A 1.25 ±0.1 0.1 6x 0.2 -0.05 0.1 MIN. 3x 0.9 ±0.1 +0.1 0.1 MAX. 2.1 ±0.1 0.3 +0.1 -0.05 1 2 ±0.2 0.9 ±0.1 2 ±0.2 Applications SOT-363 Low Voltage SOT-323 0.3 1.6 0.8 1.6 0.9 0.7 0.6 0.65 Marking Layout Manufacturer 12 S 12 Date code (MY) Pin 1 marking Type code Pin 1 Packing Packing Reel ø180mm = 3.000 Pieces/Reel Reel ø330mm = 10.000 Pieces/Reel Reel ø180mm = 3.000 Pieces/Reel Reel ø330mm = 10.000 Pieces/Reel Type code Pin 1 marking 1.1 2.15 1.1 All dimensions in mm Packages All dimensions in mm 2.15 0.2 2.3 8 8 2.3 Pin 1 Date code (MY) 4 0.2 4 S IGBT Manufacturer Power ICs Marking Layout Silicon Carbide 0.65 0.65 140 141 TSOP-6 S3O8 0.95 0.2 M B 6x 0.15 +0.1 -0.06 0.2 1.9 M A 0.25 A M 0.65 0.5 High Voltage Foot Print Foot Print Remark: Wave soldering possible dep. on customers process conditions 0.8 3.8 0.65 0.34 2.36 2.9 1.9 2.29 0.95 Silicon Carbide 0.31 Marking Layout Marking Layout 12 Date code (MY) 1234567 Date code (YWW) AA Manufacturer Pin 1 Marking Packing Packing Reel ø180mm = 3.000 Pieces/Reel Reel ø330mm = 10.000 Pieces/Reel Reel ø330mm = 5.000 Pieces/Reel IGBT Production lot code Type code 8 0.3 0.2 3.6 4 Index Marking 2.7 8 Pin 1 marking Type code 1.2 1.15 All dimensions in mm Packages 3.15 3.6 Power ICs Pin 1 Marking H = RoHS compliant + halogen-free G = Green Product / RoHS compliant 12 S Manufacturer All dimensions in mm 0.34 ±0.1 A B Low Voltage 0.35 +0.1 -0.05 2.3 ±0.15 0.43 ±0.13 3 3.3 ±0.1 0.725 ±0.135 2 0.32 ±0.12 3.3 ±0.1 1 A 1.6 ±0.1 4 10˚ MAX. 5 0.25 ±0.1 10˚ MAX. 6 2.5 ±0.1 (0.35) 0.465 ±0.135 1.705 ±0.105 0.1 MAX. 1±0.1 1.1 MAX. B 0.2 ±0.1 2.9 ±0.2 (2.25) Applications Package Outline Package Outline 142 143 S3O8 fused leads PowerStage 5x6 2.15 ±0.1 6.0 ±0.1 4.0 ±0.1 Low Voltage 0.60 0.1 0.55 ±0.15 2.11 ±0.1 3.3 ±0.1 0.405 0.105 2.29 ± 0.1 3.3 ±0.1 2.9 ±0.1 0.2 ±0.1 1.22 ± B 0.92 ±0.1 A 0.48 ±0.1 0.2 ±0.1 1 ±0.1 5.0 ±0.1 0.65 A Applications Package Outline 1±0.1 Package Outline 0.41 ±0.1 1.64 ± 0.1 1.27 (BSC) 0.34 ±0.1 0.25 M A B Foot Print High Voltage Foot Print 2.29 0.80 0.34 3.9 1.0 2.51 Drawing available on request 0.50 0.31 Marking Layout Marking Layout 1234567 12345678 Type code AA G = Green Product / RoHS compliant H = RoHS compliant + halogen-free (YWW) Manufacturer Pin 1 Marking AA Date code (YWW) Mold chassis Identification code A Pin 1 Marking Production lot code Type code Production lot code Manufacturer Packing Reel ø330mm = 5.000 Pieces/Reel Index Marking 0.3 1.2 1.2 6.3 All dimensions in mm Packages 3.6 8 Index Marking 12 3.6 0.3 5.3 8 Power ICs Reel ø330mm = 5.000 Pieces/Reel 12 ±0.3 Packing IGBT H = RoHS compliant + halogen-free G = Green Product / RoHS compliant All dimensions in mm Silicon Carbide 1.64 144 145 PowerStage 3x3 SuperSO8 +0.2 3.6 ±0.2 0.25 M A B Foot Print High Voltage 4.7 0.7 0.64 0.63 0.62 4.46 0.65 6.85 Marking Layout H = RoHS compliant + halogen-free G = Green Product / RoHS compliant 1234567 Type code AA H = RoHS compliant + halogen-free G = Green Product / RoHS compliant (YWW) Manufacturer Pin 1 Marking 12345678 Date code (YWW) AA Pin 1 Marking Production lot code A Mold chassis Identification code Manufacturer Production lot code Packing Type code IGBT Marking Layout Silicon Carbide 0.35 ± 0.1 0.7 0.5 0.33 0.1 0.95 0.1 0.49 0.1 0.65 0.1 2.45 ± 0.1 3.0 ±0.1 3.0 ±0.1 A 5 1.2 0.32 0.1 0.65 0.05 - 0.05 0.2 ±0.1 0.8 ±0.1 Foot Print Low Voltage 0.32 0.1 3 x 1.27 0.44 ±0.1 0.55 ±0.1 10˚±1.5˚ 5.9 ±0.2 6.15 ±0.2 0.65 0.1 0.33 0.1 0.95 0.1 0.49 0.1 3.0 ±0.1 4.2 0.25 ±0.1 2.45 ± 0.1 0.35 ± 0.1 Packing Reel ø330mm = 5.000 Pieces/Reel Index Marking 5.4 0.3 1.7 1.2 1.3 6.6 1.3 All dimensions in mm Packages 3.6 8 12 3.6 0.3 Power ICs 8 5.8 12 ±0.3 Reel ø330mm = 5.000 Pieces/Reel All dimensions in mm B 0.12 ±0.1 3.0 ±0.1 A 1 ±0.1 A ± 5.15 ±0.2 0.05 - 0.05 0.2 ±0.1 0.65 Applications Package Outline 0.8 ±0.1 Package Outline 146 147 VSON SuperSO8 dual 0.2 ±0.1 0.06 1.27 B M 1 0.05 4 0.44 ±0.1 PG-VSON-4-1-PO V01 3.6 ±0.2 5.9 ±0.2 1 ±0.01 2 0.6 ±0.1 5 0.25 M Low Voltage 0.12 ±0.1 8 2.75 ±0.1 0.5 ±0.1 8 ±0.1 4.75 ±0.1 0.02 B 4.3 ±0.1 B 0.25 ±0.1 10˚±1.5˚ A A 0.4 ±0.1 7.2 ±0.1 0.55 ±0.1 1 ±0.1 8 ±0.1 0.55 ±0.1 1±0.1 5.15 ±0.2 6.15 ±0.2 0...0.05 Applications Package Outline Package Outline A B Foot Print Foot Print 0.7 0.63 4.7 0.65 Silicon Carbide 6.85 1 0.7 1 3 0.635 1 4.46 0.5 0.62 4.75 4.2 1.43 5 1.2 High Voltage 7.2 PG-VSON-4-1-FP V01 Marking Layout 12345678 Manufacturer 12345678 Type code XX Pin 1 Marking G = Green Product / RoHS compliant H = RoHS compliant + halogen-free (YWW) AA Date code (YWW) A Pin 1 Marking H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Production lot code Production lot code Type code Mold chassis Identification code IGBT Marking Layout Manufacturer Packing 8 0.3 ±0.05 5.4 Index Marking Reel ø330mm = 5.000 Pieces/Reel 16 8.35 0.3 1.4 1.3 1.3 8.35 Power ICs 12 5.8 12 ±0.3 Packing 1.7 6.6 All dimensions in mm Packages All dimensions in mm 148 149 CanPAK™ SJ CanPAK™ SQ Package Outline 3.83 ±0.13 0.8 ±0.02 4.8 ±0.08 0.8 ±0.02 0.13 ±0.05 0.65 ±0.05 0.13 ±0.05 Foot Print Marking Layout High Voltage 0.68 0.45 0.7 0.7 1.2 0.8 5.6 0.95 1.25 0.4 Copper Solder mask 1.2 Silicon Carbide 1.25 1.08 0.55 0.55 0.9 Solder mask 1.03 5.8 Copper Stencil apertures 0.4 0.93 0.9 0.99 0.65 0.5 1.25 0.75 0.9 1.25 0.99 5.8 0.65 1.2 2.9 0.75 0.65 0.9 0.55 0.75 1.13 1.13 0.7 5.6 1.2 2.9 0.85 2.9 0.65 0.7 2.9 0.58 1.2 Foot Print Low Voltage 0.65 ±0.05 0.05 ±0.05 0.4 ±0.05 0.7 ±0.02 2.8 ±0.05 0.9 ±0.02 0.25 ±0.02 0.4 ±0.05 4.8 ±0.08 0.05 ±0.05 0.5 ±0.02 2.45 ±0.1 0.6 ±0.02 1.35 ±0.1 0.6 ±0.02 2.8 ±0.05 0.9 ±0.02 2.65 ±0.05 1.35 ±0.05 3.83 ±0.13 Applications Package Outline Stencil apertures 0.5 Marking Layout Gate Marking Manufacturer Type code Lot code Date code (YYWW) 1234 1234 Manufacturer Type code Lot code Date code (YYWW) 1234 1234 G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant IGBT G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant Gate Marking Packing Packing Reel ø177mm = 1.000 Pieces/Reel Reel ø177mm = 1.000 Pieces/Reel 0.3 Gate Marking 0.9 4.1 Power ICs 0.75 0.75 0.9 All dimensions in mm Packages All dimensions in mm 4.1 5.1 12 3.7 5.1 12 Gate Marking 0.3 8 3.7 8 150 151 CanPAK™ ST CanPAK™ MN Package Outline 4.93 ±0.13 3.9 ±0.05 0.9 ±0.02 0.55 ±0.02 0.5 ±0.02 0.13 ±0.05 0.65 ± 0.05 0.9 ±0.02 0.13 ±0.05 Foot Print High Voltage 0.7 3.2 1.1 3.2 0.75 1.45 0.675 2x 0.8 Copper Solder mask Stencil apertures 0.675 Silicon Carbide Stencil apertures Marking Layout 0.85 0.9 0.95 0.7 4x 0.7 0.85 4x 1.8 1.175 1.125 0.7 Solder mask 0.5 1.2 1.2 0.9 Copper 0.5 1.2 1.85 3.2 0.695 0.75 3.2 0.7 0.4 1.11 0.7 0.5 0.33 1.2 0.6 1.25 1.175 0.55 0.7 1.09 1.85 5.6 0.66 0.82 0.97 0.9 5.8 0.6 0.23 1.25 0.85 0.65 2.9 0.6 0.91 0.9 2.9 0.65 2x 1.3 Foot Print Low Voltage 0.65 ± 0.05 6.3 ±0.05 1.4 ±0.02 0.28 ±0.02 0.05 ±0.05 0.4 ±0.05 0.8 ±0.02 1.63 ±0.1 3.23 ±0.1 4.8 ±0.08 0.05 ±0.05 0.4 ±0.05 0.6 ±0.02 2.8 ±0.05 0.6 ±0.02 0.77 ±0.02 2.63 ±0.1 3.83 ±0.13 1.33 ±0.1 Applications Package Outline 0.95 Marking Layout Gate Marking Manufacturer Type code Lot code Date code (YYWW) 1234 1234 G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant IGBT G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant Gate Marking Manufacturer Type code Lot code Date code (YYWW) 1234 1234 Packing Reel ø177mm = 1.000 Pieces/Reel 0.3 0.3 8 Gate Marking 0.75 Gate Marking 0.9 5.2 0.95 1.2 All dimensions in mm Packages All dimensions in mm 4.1 5.1 5.1 12 3.7 8 Power ICs Reel ø177mm = 1.000 Pieces/Reel 6.6 12 Packing 152 153 CanPAK™ MX CanPAK™ MP 0.4 ±0.02 0.65 ± 0.05 0.55 ±0.02 0.65 ± 0.05 0.82 ±0.02 0.13 ±0.05 Low Voltage 0.28 ±0.02 6.3 ±0.05 0.05 ±0.05 0.4 ±0.05 0.7 ±0.02 0.7 ±0.02 1.4 ±0.02 6.3 ±0.05 0.4 ±0.05 3.9 ±0.05 1.35 ±0.1 0.05 ±0.05 0.6 ±0.02 2.06 ±0.1 2.75 ±0.1 4.93 ±0.13 3.9 ±0.05 0.6 ±0.02 0.77 ±0.02 3.36 ±0.1 4.93 ±0.13 Applications Package Outline Package Outline 0.13 ±0.05 Foot Print High Voltage 0.75 0.65 0.7 1.35 Copper Solder mask 0.47 Silicon Carbide 0.35 Stencil apertures 0.75 1.88 1.45 0.75 0.7 0.87 7.1 0.65 0.65 1.73 0.9 0.87 Solder mask 1.8 1.08 0.75 0.9 7.3 Copper 4.2 0.6 1.8 0.55 0.76 0.73 0.23 0.5 0.33 1.9 0.5 0.7 1.75 0.9 0.6 0.6 4.2 0.5 1.85 0.75 1.78 7.1 0.66 0.55 0.83 7.3 1.85 1.8 0.7 0.65 0.9 4.15 0.55 1.8 1.63 4.2 0.5 1.85 0.65 1.85 0.93 Foot Print Stencil apertures Marking Layout Marking Layout Gate Marking Manufacturer Type code Lot code Date code (YYWW) 1234 1234 Manufacturer Type code Lot code Date code (YYWW) 1234 1234 G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant IGBT G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant Gate Marking Packing Gate Marking 0.95 1.2 5.2 0.95 1.2 All dimensions in mm Packages All dimensions in mm 5.2 0.3 8 6.6 12 5.1 Gate Marking Reel ø177mm = 1.000 Pieces/Reel Power ICs 0.3 8 5.1 Reel ø177mm = 1.000 Pieces/Reel 6.6 12 Packing 154 155 CanPAK™ MZ TDSON-10 Package Outline Applications Package Outline 0.42 2 0.23 0.5 Low Voltage 0.65 ± PG-TDSON-10-2-PO V01 0.13 ±0.05 0.25 Copper Solder mask Stencil apertures Wettable surface 0.6 High Voltage 0.7 1.65 0.5 0.6 0.5 2.5 2x 0.9 0.9 3.2 0.325 0.475 2.9 1.45 0.7 0.65 3.2 1.2 0.75 0.9 0.475 3.5 2.8 1.6 1 1.2 0.475 2x 0.6 3.5 0.25 0.65 4x 1.8 1.175 Stencil apertures Silicon Carbide 1.2 1.2 3.2 0.7 0.35 1.6 4x 0.7 1.85 3.2 0.325 0.475 0.7 Index Marking Foot Print 0.75 1.85 0.2 0.5 3 ±0.1 6.3 ±0.05 0.4 ±0.05 0.30 ±0.02 1.175 4 x 0.5 = 2 1.6 ±0.1 0.7 ±0.02 0.05 MAX. Index Marking 2.3 0.35 ±0.1 0.05 ±0.05 0.65 ±0.02 Foot Print 0.9 ±0.05 3 ±0.1 3.9 ±0.05 0.7 ±0.02 0.95 ±0.02 3.0 ±0.1 4.93 ±0.13 PG-TDSON-10-2-FP V01 0.7 Marking Layout Marking Layout Gate Marking Pin 1 marking 1234 XXXX Type code Lot code IGBT G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant Manufacturer Type code Lot code Date code (YYWW) 1234 1234 Packing Packing 0.3 Gate Marking Drawing available on request 0.95 1.2 All dimensions in mm Packages All dimensions in mm 5.2 Reel ø330mm = 5.000 Pieces/Reel 6.6 12 5.1 8 Power ICs Reel ø177mm = 1.000 Pieces/Reel 156 157 DIP-7 DIP-8 7 0.46 ±0.1 0.35 8x 8.9 ±1 5 8 4 1 9.52 ±0.25 1) 4.37 MAX. 0.38 MIN. 2.54 0.25 +0.1 6.35 ±0.25 1) 7.87 ±0.38 0.25 +0.1 6.35 ±0.25 1) Low Voltage 0.35 7x 1.7 MAX. 3.25 MIN. 2.54 0.46 ±0.1 7.87 ±0.38 3.25 MIN. 0.38 MIN. 1.7 MAX. Applications Package Outline 4.37 MAX. Package Outline 8.9 ±1 5 1 4 9.52 ±0.25 1) Index Marking 1) Does not include plastic or metal protrusion of 0.25 max. per side 1) Does not include plastic or metal protrusion of 0.25 max. per side Marking Layout High Voltage Index Marking Marking Layout Date code (YYWW) Manufacturer LMC XXXXXXXXXXX 12345678901 Type code Manufacturer e LMC XXXXXXXXXXX Lot code G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant Mold compound code Lot code Pieces/Tube: 20 Pieces/Tube: 20 12.2 ±0.5 Packing IGBT G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Packing 9 ±0.5 Type code 9 ±0.5 15 ±0.3 Power ICs 15 ±0.3 12.2 ±0.5 12345678901 Silicon Carbide Date code (YYWW) All dimensions in mm Packages All dimensions in mm 158 159 DIP-14 DIP-20 Package Outline 14 1 1.5 MAX. 0.5 +0.1 2.54 1 Applications 0.25 +0.1 9.9 MAX. 0.25 20x 11 20 7 0.87 4.2 MAX. 0.51 MIN. 8.9 ±1 8 19.05 ±0.25 1) 7.62 ±0.1 7.3 ±0.1 Low Voltage 0.35 14x 6.35 ±0.25 1) 0.25 +0.1 3.175 MIN. 1.7 MAX. 2.54 0.46 ±0.1 7.87 ±0.38 3.35 ±0.15 0.38 MIN. 4.37 MAX. Package Outline 24.6 ±0.1 10 0.1 MAX. Index Marking Marking Layout Pieces/Tube: 20 Pieces/Tube: 20 9 ±0.5 9 ±0.5 15 ±0.3 Silicon Carbide Date code (YYWW) H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Lot number IGBT Packing 12.2 ±0.5 Packing 123456789012345678 MC XXXXXXXXXXX 12.2 ±0.5 L Date code (YYWW) H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Lot number 1234567890 MC XXXXXXXXXXX Manufacturer Type code Mold compound code L Marking Layout Mold compound code Manufacturer Type code High Voltage Index Marking 1) Does not include plastic or metal protrusion of 0.25 max. per side Power ICs 15 ±0.3 All dimensions in mm Packages All dimensions in mm 160 161 TSSOP-48 DSO-36 11 ±0.15 1) 6.3 5˚ ±3˚ 0.25 2.8 Heatslug 0.1 C 36x 0.95 ±0.15 +0.13 0.25 M ABC 14.2 ±0.3 17 x 0.65 = 11.05 0.25 B 36 19 5.9 ±0.1 Bottom View 19 3.2 ±0.1 36 B +0.07 -0.02 3.5 MAX. 2) 15.74 ±0.1 (Heatslug) 0.25 25 3.25 ±0.1 0 +0.1 8° MAX. 0.65 8.1(BSC) 0.2 48x 48 -0.04 0.6 +0.15 -0.1 0.1 2) 0.2 +0.07 -0.03 1.1 ±0.1 1.3 0.5 ±0.1 0.13 +0.03 +0.05 -0.2 1.0 1.10 MAX. 0.15 -0.1 6.1 Applications Package Outline Package Outline 1 x 45˚ 1 18 18 15.9 ±0.1 1) 1 Index Marking 12.5 ±0.1 Heatslug 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Stand off Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side 1) 1 A 24 1) 13.7 -0.2 Low Voltage Index Marking PG-DSO-36-10, -12, -15, -16, -21, -23, -26, -27 V01 Foot Print High Voltage 0.45 1.83 Foot Print 0.29 13.48 1.3 0.65 7.1 Silicon Carbide 17 x 0.65 = 11.05 HLG09551 Pin 1 Marking 123456789012 123456789012 XXXXXXXXXXX Infineon Manufacturer 1234567890 G = Green Product / RoHS compliant H = RoHS compliant + halogen free G = Green Product / RoHS compliant H = RoHS compliant + halogen free XXXXX Manufacturer Type code Pin 1 Marking Type code Lot number IGBT Lot number XXXXXX Marking Layout Marking Layout Packing 0.3 20 Power ICs 16.4 Drawing available on request 7 ±0.1 Pin 1 24 ±0.3 Packing 18 ±0.1 3.4 14.7 4 CPSG5808 All dimensions in mm Packages All dimensions in mm 162 163 DSO-28 Package Outline Foot Print Foot Print High Voltage Low Voltage Package Outline Applications TSSOP-28 L B B e e L A A HLG05506 Marking Layout Silicon Carbide HLG05506 Marking Layout Type code Pin 1 Marking Infineon 123456789001234 123456789001234 Manufacturer 123456789 123456789012 123456789012 Type code Pin 1 Marking G = Green Product / RoHS compliant H = RoHS compliant/ halogen free XXXXXXXXXXX XXXXXXXXXXX Lot number G = Green Product / RoHS compliant H = RoHS compliant + halogen free IGBT Manufacturer Production lot code Packing 18.3 6.5 -0.2 15.4 1.2 1.6 2.6 10.9 CPSG5872 3 All dimensions in mm Packages All dimensions in mm Power ICs 6.8 16 ±0.3 10.2 Pin 1 0.3 12 0.3 8 24 ±0.3 Packing 164 165 Packaging Information VQFN-68 (DIN IEC 60 286-3) Please consult your nearest Infineon sales offices (www.infineon.com/sales) if you have any queries relating to additional dimensions, dimensional tolerances or variations. 0.9 MAX. A C M 8.1±0.1 Index Marking 8.1±0.1 Tape and Reel made of Plastic ø Reel 180mm and 330mm Carrier tape width: 8, 12mm Removable transparency foil Low Voltage Index Marking 68x 0.1 SEATING PLANE 9.75 A B C 68x 0.05 ø330 12 11 10 (0.2) Direction of unreeling 0.05 MAX. STANDOFF 9 8 7 6 5 Foot Print 4 ø180 3 Upper side Sd 10 4.3±0.1 0.6 +0.15 -0.1 3.55 ±0.1 9.75 B (0.65) 0.5 10 Applications Tape and Reel Package Outline 2 1 Removable transparency foil High Voltage 93 07 Sd Drawing available on request Infi neo 8 Optional: additional customer label n Infi neo n Silicon Carbide Barcode label (readable in this position and removable) Marking Layout Manufacturer 12345678901 12345678901 12345678901 XXXXXXXXXXX Fixing on the Tape Type code Carrier tape width: ≤ 12mm Lot code 30 ±10 G = Green Product / RoHS compliant H = RoHS compliant / halogen free IGBT Pin 1 marking Packing on Power ICs Index Marking 24 10.35 13 ±0.2 16 10.35 1.05 Packages All dimensions in mm 166 167 1.5 +0.1 (DIN IEC60 286-4) Please consult your nearest Infineon sales offices (www.infineon.com/sales) if you have any queries relating to additional dimensions, dimensional tolerances or variations. 4 ±0.1 Trailer (empty) Leader (empty) (1 x Circumference / Hub) min. 160mm (1 x Circumference / Reel) min. 400mm Tube and Packing Standard Length: 528-2mm; coated (unless stated to the contrary) Low Voltage Direction of unreeling Applications Tube (DIN IEC60 286-4) Direction of Unreeling There shall be a leader of 400mm minimum of cover tape, which includes at least 100mm of carrier tape with empty High Voltage compartments. All the leader may consist of the carrier tape with empty compartments, sealed by cover tape. Labels and Boxes Silicon Carbide For 1 Tape (resembling a pizza box) S d ine on O V RIG E PA R IN C PA AL K C IN K G T Inf Up to 10 Tapes pro x. 56 5 Infineon packing label IGBT Ap x. pro Ap m a x . 85 App S d ine 130 on O V RIG E PA R IN C PA AL K C IN K G T Inf rox. Infi ne on Infi ne on Power ICs Infineon packing label Packages Barcode label 168 169 Ne w! 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Where you need it. When you need it. Infineon offers its toll-free 0800 service hotline as one central number, available 24 / 7 in English and German. Our global connection service goes way beyond standard operating and switchboard services by offering qualified support on the phone. Call us! Germany ......................... 0800 951 951 951 USA ................................ 1866 951 9519 International ................... 00 800 951 951 951 Direct access .................. +49 89 234 - 0 (interconnection fee) Where to Buy Infineon Distribution Partners and Sales Offices Please use our location finder to get in contact with your nearest Infineon distributor or sales office. www.infineon.com/WhereToBuy Infineon Technologies – innovative semiconductor solutions for Energy Efficiency, mobility and security. Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2012 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B152-H9571-G2-X-7600 Date: 05 / 2012 ATTENTION PLEASE! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. INFORMATION For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). WARNINGS Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.