ETC KA5M02659R

www.fairchildsemi.com
KA5x02xx-SERIES
KA5H0265RC, KA5M0265R, KA5L0265R,
KA5H02659RN/KA5M02659RN, KA5H0280R,
KA5M0280R
Fairchild Power Switch(FPS)
Features
Description
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The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry.
compared to discrete MOSFET and controller or RCC
switching converter solution, a Fairchild Power Switch(FPS)
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
Precision fixed operating frequency (100/67/50KHz)
Pulse by pulse current limiting
Over current protection
Over voltage protection (Min. 25V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Auto-restart mode
TO-220F-4L
8-DIP
TO220-5L
1
1
1. GND
2. Drain
3. Vcc
4. FB
1.6.7.8. Drain
2. GND
3. Vcc
4. FB
5. NC
1
1. Drain
2. GND
3. Vcc
4. FB
5. S/S
Internal Block Diagram
VCC
32V
5V
Vref
Internal
bias
DRAIN
SFET
Good
logic
Soft Start
uA
OSC
5V
S
R
−
FB
5µA
1mA 2.5R
1R
9V
0.1V
−
+
27V
L.E.B
+
+
7.5V
−
Q
S
Thermal S/D
R
GND
Q
Power on reset
OVER VOLTAGE S/D
Rev.1.0.2
©2001 Fairchild Semiconductor Corporation
KA5X02XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
VD,MAX
650
V
VDGR
650
V
VGS
±30
V
IDM
8.0
ADC
ID
2.0
ADC
KA5x0265xRx
Maximum Drain Voltage
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Single Pulsed Avalanche Energy (2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
ID
1.3
ADC
EAS
68
mJ
VCC,MAX
30
V
VFB
−0.3 to VSD
V
PD
42
W
Derating
0.33
W/°C
Operating Junction Temperature.
TJ
+160
°C
Operating Ambient Temperature.
TA
−25 to +85
°C
TSTG
−55 to +150
°C
VD,MAX
800
V
VDGR
800
V
VGS
±30
V
Storage Temperature Range.
KA5x0280R
Maximum Drain Voltage
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
(1)
IDM
8.0
ADC
Continuous Drain Current (TC=25°C)
ID
2.0
ADC
Continuous Drain Current (TC=100°C)
ID
1.3
ADC
EAS
90
mJ
VCC,MAX
30
V
VFB
−0.3 to VSD
V
PD
35
W
Derating
0.28
W/°C
Operating Junction Temperature.
TJ
+160
°C
Operating Ambient Temperature.
TA
−25 to +85
°C
TSTG
−55 to +150
°C
Drain Current Pulsed
Single Pulsed Avalanche Energy
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Storage Temperature Range.
(2)
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=51mH, starting Tj=25°C
2
KA5X02XX-SERIES
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
BVDSS
VGS=0V, ID=50µA
650
-
-
V
KA5x0265xRx
Drain-source breakdown voltage
VDS=Max. Rating, VGS=0V
-
-
50
µA
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
-
-
200
µA
RDS(ON)
VGS=10V, ID=0.5A
-
5.0
6.0
Ω
gfs
VDS=50V, ID=0.5A
1.5
2.5
-
S
-
550
-
VGS=0V, VDS=25V,
f=1MHz
-
38
-
-
17
-
-
20
-
-
15
-
-
55
-
-
25
-
-
-
35
-
3
-
-
12
-
Zero gate voltage drain current
Static drain-source on resistance (note)
Forward transconductance
IDSS
(note)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn on delay time
td(on)
Rise time
tr
Turn off delay time
td(off)
Fall time
tf
Total gate charge
(gate-source+gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (Miller) charge
Qgd
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
pF
nS
nC
KA5x0280R
Drain-source breakdown voltage
BVDSS
800
-
-
V
VDS=Max. Rating, VGS=0V
-
-
50
µA
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
-
-
200
µA
RDS(ON)
VGS=10V, ID=0.5A
-
5.6
7.0
Ω
gfs
VDS=50V, ID=0.5A
1.5
2.5
-
S
-
250
-
-
52
-
-
25
-
-
21
-
-
28
-
-
77
-
-
24
-
-
-
60
-
15
-
-
20
-
Zero gate voltage drain current
Static drain-source on resistance (note)
Forward transconductance
IDSS
(note)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn on delay time
td(on)
Rise time
Turn off delay time
tr
td(off)
Fall time
tf
Total gate charge
(gate-source+gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (Miller) charge
Qgd
VGS=0V, ID=50µA
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
pF
nS
nC
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1S = --R
3
KA5X02XX-SERIES
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
UVLO SECTION
Start Threshold Voltage
VSTART
VFB=GND
14
15
16
V
Stop Threshold Voltage
VSTOP
VFB=GND
8.4
9
9.6
V
Initial accuracy
FOSC
KA5H0265xRx
KA5H0280R
90
100
110
kHz
Initial accuracy
FOSC
KA5M0265xRx
KA5M0280R
61
67
73
kHz
FOSC
KA5L0265R
45
50
55
kHz
∆F/∆T
−25°C ≤ Ta ≤ +85°C
-
±5
±10
%
Maximum duty cycle
Dmax
KA5H0265xRx
KA5H0280R
62
67
72
%
Maximum duty cycle
Dmax
KA5M0265xRx
KA5M0280R
KA5L0265R
72
77
82
%
OSCILLATOR SECTION
Initial accuracy
Frequency change with temperature
(2)
FEEDBACK SECTION
Feedback source current
IFB
Ta=25°C, 0V ≤ Vfb ≤ 3V
0.7
0.9
1.1
mA
Shutdown feedback voltage
VSD
Vfb ≤ 6.5V
6.9
7.5
8.1
V
4
5
6
µA
4.7
5.0
5.3
V
0.8
1.0
1.2
mA
4.80
5.00
5.20
V
-
0.3
0.6
mV/°C
Shutdown delay current
Idelay
Ta=25°C, 5V ≤ Vfb ≤ VSD
SOFT START SECTION
Soft Start Voltage
VSS
Soft Start Current
ISS
KA5H0265RC
REFERENCE SECTION
Output voltage (1)
Vref
Temperature Stability (1)(2)
Vref/∆T
Ta=25°C
−25°C ≤ Ta ≤ +85°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit
IOVER
KA5x02659RN
0.79
0.9
1.01
A
Peak Current Limit
IOVER
KA5x0265Rx
KA5x0280R
1.05
1.2
1.34
A
VOVP
VCC ≥ 24V
25
27
29
V
140
160
-
°C
PROTECTION SECTION
Over voltage protection
Thermal shutdown temperature (Tj)
(1)
TSD
-
TOTAL DEVICE SECTION
Start Up Current
Operating supply current
(control part only)
ISTART
VCC=14V
-
100
170
µA
IOPR
VCC ≤ 28
-
7
12
mA
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA5X02XX-SERIES
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
Fig.1 Operating Frequency
1.2
1.15
1.1
1.05
Fosc 1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100 125 150
Fig.2 Feedback Source Current
1.2
1.15
1.1
1.05
Ifb 1
0.95
0.9
0.85
0.8
-25
0
25
Temperature [°C]
Figure 1. Operating Frequency
Fig.3 Operating Current
1.2
1.15
1.1
1.05
Iop 1
0.95
0.9
0.85
0.8
-25
100
125 150
1.1
Fig.4 Max Inductor Current
1.05
IIpeak
over 1
0.95
0.9
0.85
0
25
50
75
100 125 150
Figure 3. Operating Supply Current
0.8
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 4. Peak Current Limit
Fig.5 Start up Current
Fig.6 Start Threshold Voltage
1.15
1.1
1.3
1.05
1.1
Istart
Vstart 1
0.9
0.95
0.7
0.5
-25
75
Figure 2. Feedback Source Current
Temperature [°C]
1.5
50
Temperature [°C]
0.9
0
25
50
75
100 125 150
Temperature [°C]
Figure 5. Start up Current
0.85
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 6. Start Threshold Voltage
5
KA5X02XX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°°C)
Fig.7 Stop Threshold Voltage
1.15
Fig.8 Maximum Duty Cycle
1.15
1.1
1.1
1.05
1.05
Vstop 1
Dmax 1
0.95
0.95
0.9
0.9
0.85
-25
0
25
50
75
100 125 150
0.85
-25
0
Temperature [°C]
Figure 7. Stop Threshold Voltage
50
75
100 125 150
Figure 8. Maximum Duty Cycle
Fig.9 Vcc Zener Voltage
Fig.10 Shutdown Feedback Voltage
1.15
1.2
1.15
1.1
1.05
Vz 1
0.95
0.9
0.85
0.8
-25
1.1
1.05
Vsd 1
0.95
0.9
0
25
50
75
100 125 150
0.85
-25
0
Temperature [°C]
Figure 9. VCC Zener Voltage
25
50
75
100 125 150
Temperature [°C]
Figure 10. Shutdown Feedback Voltage
Fig.11 Shutdown Delay Current
1.2
1.15
1.1
1.05
Idelay 1
0.95
0.9
0.85
0.8
-25
Fig.12 Over Voltage Protection
1.15
1.1
1.05
Vovp 1
0.95
0.9
0
25
50
75
100 125 150
Temperature [°C]
Figure 11. Shutdown Delay Current
6
25
Temperature [°C]
0.85
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 12. Over Voltage Protection
KA5X02XX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°°C)
Fig.13 Soft Start Voltage
Fig.14 Drain Source Turn-on
Resistance
1.15
2.5
1.1
2
1.05
1
1.5
0.95
Rdson
( )1
0.9
0.5
Vss
0.85
-25
0
25
50
75
100 125
Temperature [°C]
Figure13. Soft Start Voltage
150
0
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 14. Static Drain-Source on Resistance
7
KA5X02XX-SERIES
Package Dimensions
TO-220F-4L
8
KA5X02XX-SERIES
Package Dimensions (Continued)
TO-220F-4L(Forming)
9
KA5X02XX-SERIES
Package Dimensions (Continued)
8-DIP
10
KA5X02XX-SERIES
Package Dimensions (Continued)
TO-220-5L
11
KA5X02XX-SERIES
Package Dimensions (Continued)
TO-220-5L(Forming)
12
KA5X02XX-SERIES
Ordering Information
Product Number
KA5H0265RC-TU
Package
TO-220-5L
KA5H0265RC-YDTU TO-220-5L(Forming)
KA5M0265R-TU
KA5M0265R-YDTU
KA5L0265R-TU
KA5L0265R-YDTU
Product Number
KA5H0280R-TU
KA5H0280R-YDTU
KA5M0280R-TU
TO-220F-4L
TO-220F-4L(Forming)
TO-220F-4L
TO-220F-4L(Forming)
Package
TO-220F-4L
TO-220F-4L(Forming)
TO-220F-4L
Marking Code
BVDSS
FOSC
RDS(on)
5H0265RC
650V
100kHz
5Ω
5M0265R
650V
67kHz
5Ω
5L0265R
650V
50kHz
5Ω
Marking Code
BVDSS
FOSC
RDS(on)
5H0280R
800V
100kHz
5.6Ω
5M0280R
800V
67kHz
5.6Ω
KA5M0280R-YDTU
TO-220F-4L(Forming)
Product Number
Package
Marking Code
BVDSS
FOSC
RDS(on)
KA5H02659RN
8-DIP
5H02659R
650V
100kHz
5Ω
KA5M02659RN
8-DIP
5M02659R
650V
67kHz
5Ω
TU : Non Forming Type
YDTU : Forming Type
13
KA5X02XX-SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
11/23/01 0.0m 001
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 2001 Fairchild Semiconductor Corporation