ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4947 is the P-Channel logic enhancement mode power field ● RDS(ON)≦72mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● RDS(ON)≦94mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits APPLICATIONS where high-side switching , and low in-line power loss are needed in ● Power Management in Note book ● Portable Equipment a very small outline surface mount package. ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC PIN CONFIGURATION ● LCD Display inverter (SOP-8) Top View e Ordering Information: ME4947 (Pb-free) ME4947-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Steady State Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain TA=25℃ Current(Tj=150℃) TA=70℃ Pulsed Drain Current Maximum Power Dissipation ID IDM TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* PD -4.4 -3.5 -18 2.5 1.6 A A W TJ -55 to 150 ℃ RθJA 50 ℃/W *The device mounted on 1in2 FR4 board with 2 oz copper Apr, 2010-Ver1.0 01 ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0, ID=-250μA -60 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistance Typ Max Unit STATIC VSD V -3 V VDS=0V, VGS=±20V ±100 nA VDS=-60V, VGS=0V -1 μA VGS=-10V, ID= -5A 60 72 VGS=-4.5V, ID= -4A 73 94 -0.8 -1.2 Diode Forward Voltage IS=-1A, VGS=0V Qg Total Gate Charge VDS=-30V, VGS=-10V, ID=-4A Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 4.9 Ciss Input capacitance 962 Coss Output Capacitance Crss Reverse Transfer Capacitance 33 td(on) Turn-On Delay Time 38 tr Turn-On Rise Time VDD=-30V, RL =7.5Ω 18 td(off) Turn-Off Delay Time VGEN=-10V, RG=3Ω 51 tf Turn-On Fall Time mΩ V DYNAMIC 23 11.4 VDS=-30V, VGS=-4.5V, ID=-4A VDS=-15V, VGS=0V, f=1MHz 5.1 100 nC pF ns 6 Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing. b. Matsuki reserves the right to improve product design, functions and reliability without notice. Apr, 2010-Ver1.0 02 ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) Apr, 2010-Ver1.0 03 ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) Apr, 2010-Ver1.0 04