ETC S8550

S8 550
SOT-23
TRANSISTOR(PNP)
FEATURES
z
Complimentary to S8050
1. BASE
Collector current: IC=0.5A
z
2. EMITTER
MARKING :
3. COLLECTOR
2TY
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.5
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
IC = -100μA,
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
MIN
MAX
UNIT
-40
V
IC =-1mA, IB=0
-25
V
V(BR)EBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -40V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -3V, IC=0
-0.1
μA
IE=0
400
hFE(1)
VCE= -1V, IC= -50mA
120
hFE(2)
VCE= -1V, IC= -500mA
50
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB= -50mA
-1.2
V
DC current gain
fT
Transition frequency
CLASSIFICATION OF
Rank
Range
VCE= -6V, IC= -20mA
150
f=30MHz
MHz
hFE(1)
L
H
120-200
200-350
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
S8 550
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05