SI2305 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] RDS(ON), [email protected], [email protected] 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE) A B C D E Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 F 0.45 REF. 0.55 S G H K J L Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 M 0° REF. 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 ID -2.2 IDM -8 Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation TA = 25o 2) TA = 75oC TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) PD 2) Junction-to-Ambient Thermal Resistance (PCB mounted) 3) RthJA Unit V A 1.25 W 0.8 o -55 to 150 C 100 o C/W 166 Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board. -1- SI2305 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min. VGS = 0V, ID = -250uA -20 Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS 1) Drain-Source On-State Resistance Gate Threshold Voltage R DS(on) VGS(th) Zero Gate Voltage Drain Current 0 IDSS VGS = -4.5V, ID = -2.8A 105 130 VGS = -2.5V, ID = -2.0A 145 190 mΩ VDS =VGS, ID = -250uA -0.45 Forward Transconductance 1) V VDS = -20V, V GS = 0V -1 uA o VDS = -20V, V GS = 0V TJ=55 Gate Body Leakage V IGSS VGS = ± 8V, VDS = 0V gfs VDS = -5V, ID = -2.8A C -10 ±100 6.5 nA S Dynamic Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 5.8 VDS = -6V, ID ^ -2.8A 10 nC 0.85 VGS = -4.5V 1.7 13 25 36 60 42 70 34 60 VDD = -6V, RL=6Ω Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss ID ^ -1.A, VGEN = -4.5V RG = 6 Ω ns 415 VDS = -6V, VGS = 0V Output Capacitance Coss pF 223 f = 1.0 MHz Reverse Transfer Capacitance 87 Crss Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) IS VSD IS = -1.6A, VGS = 0V -0.8 -1.6 A -1.2 V Pulse test: pulse width <= 300us, duty cycle<= 2% -2- SI2305 Output Characteristics_ 10 Transfer Characteristics 10 VGS = 5, 4.5, 4, 3.5, 3 V 2.5 V 6 2V 4 2 0, 0.5, 1 V 1.5 V 0 0 1 2 3 TC = - 55_C 8 I D - Drain Current (A) I D - Drain Current (A) 8 4 25_C 6 125_C 4 2 0 0.0 5 VDS - Drain-to-Source Voltage (V) 2.0 2.5 3.0 800 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 1.5 Capacitance 1000 0.5 0.4 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 600 Ciss 400 Coss Crss 200 0.1 0.0 0 0 2 4 6 8 10 0 ID - Drain Current (A) 1.8 VDS = 6 V ID = 2.8 A 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 4 3 2 1 0 0 2 4 3 6 9 12 VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) 1.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 0.5 6 Qg - Total Gate Charge (nC) 8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.8 A 1.4 1.2 1.0 0.8 0.6 - 50 0 50 100 TJ - Junction Temperature (_C) -3- 150 SI2305 Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 0.6 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.5 TJ = 150_C TJ = 25_C 1 0.4 0.3 ID = 2.8 A 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 VSD - Source-to-Drain Voltage (V) 6 8 Single Pulse Power 14 12 0.3 0.2 10 ID = 250 mA Power (W) VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 2 0.1 0.0 8 TC = 25_C Single Pulse 6 4 - 0.1 2 0 - 0.2 - 50 0 50 100 150 0.01 0.10 TJ - Temperature (_C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) -4- 30