ETC TSF8N60M

TSP8N60M / TSF8N60M
600V N-Channel MOSFET
General Description
Features
This Pow er MOSFET is produced using Tr uesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to
minimize o n-state r esistance, pr ovide superior switching
performance, and withstand high ener gy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency sw itched mode power supp lies,
active power factor corr ection based on half br idge
topology.
•
•
•
•
•
•
7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V
Low gate charge ( typical 29nC)
High ruggedness
Fast witching
s
100% avalanche tested
Improved dv/dt capability

D
●
◀
G
G DS
TO-220
▲
●
●
TO-220F
GD S
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°Cunless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
TSP8N60M
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
TSF8N60M
Units
V
7.5
7.5*
A
4.5
4.5 *
A
30
30 *
A
600
(Note 1)
VGSS
Gate-Source Voltage
 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
267
mJ
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
15.2
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
152
1.21
50
0.40
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case
TSP8N60M
0.82
TSF8N60M
2.5
Units
°C/W
RCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
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TSP8N60M / TSF8N60M
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS
/
TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 A, Referenced to 25°C
--
0.7
--
V/°C
VDS = 600 V, VGS = 0 V
--
--
1
A
IDSS
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C
--
--
10
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
5.0
V
--
0.98
1.20

-
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID =
YFS
Forward Transconductance
VDS = 20V, ID = 3.75 A
-
8.5
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1000
--
pF
--
110
--
pF
--
12.6
--
pF
--
20
--
ns
--
50
--
ns
--
80
--
ns
--
70
--
ns
3.75 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.5A,
RG = 25 
(Note 4, 5)
VDS = 480 V, ID = 7.5 A,
VGS = 10 V
(Note 4, 5)
--
29
-
nC
--
4.7
--
nC
--
12.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 7.5 A
Drain-Source Diode Forward Voltage
--
--
30.0
A
VSD
--
--
1.5
V
trr
Reverse Recovery Time
--
350
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7.5 A,
dIF / dt = 100 A/s
--
3.3
--
C
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10 mH, IAS = 7.5 A, VDD = 50V, RG = 25 Starting TJ = 25°C
3. ISD  7.5 A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300s, Duty cycle  2%
5. Essentially independent of operating temperature
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Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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Typical Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
for TSP8N60M
Figure 9-2. Maximum Safe Operating Area
for TSF8N60M
8
ID, Drain Current [A]
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [? ]
Figure 10. Maximum Drain Current
vs Case Temperature
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Typical Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve
for TSP8N60M
Figure 11-2. Transient Thermal Response Curve
for TSF8N60M
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Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
SameType
asDUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
D
S
R
G
R
L
V
D
S
9
0
%
V
D
D
V
G
S
1
0
%
V
G
S
D
U
T
1
0
V
td(on)
tr
td(off)
ton
toff
tf
Unclamped Inductive Switching Test Circuit & Waveforms
V
D
S
B
V
D
S
S
--1
-- LIAS2 -------------------E
A
S=
2
B
V
D
S
S-V
D
D
L
B
V
D
S
S
IAS
ID
R
G
V
D
D
D
U
T
10V
tp
ID(t)
V
D
S(t)
V
D
D
tp
Tim
e
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D U T
V
D S
_
I
S D
L
D r iv e r
R
V
V GS
( D r iv e r )
G
S a m e Ty p e
as D U T
G S
V
D D
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p uls e p e r io d
D
G a te P u ls e W id t h
=-------------------------G a t e P uls e P er io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I
S D
d i/d t
( D U T )
IR
M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T )
B o d y D io d e R e c o v e r y d v /d t
V
S D
V
D D
B o d y D io d e
F o r w a r d V o lta g e D r o p
代理销售：深圳德江源电子有限公司 0755-82966416 15989331311