T OP I C S 新 版 产 品 话 题 2009年7月17日 推出 低损失双极晶体管: ECH系列 利于配套产品的热对策与小型化! Flat Panel Display 小型封装, Power Loss 55%低减*1 太阳电池 Power Conditioner *1: 截止2009年7月17日, 限于SOT23级别 ECH8101, ECH8102 ECH8201, ECH8202 ECH8901 2009年8月开始量产! 100万个/月 (高峰期) 样片价格: @50日元起 目标市场及其主要特长 • 业界最低*1Power loss: 与以往制品相比功耗降低了55%*1 • 业界最大*1额定电流12A: 为以往制品的2.4倍*1 • 小型化省资源: 封装材料削减了94%*2 *1 截止2009年7月17日。SOT23级别(2.9mm×2.8mm)中, 与以往业界最高性能品的比较。 *2 与同等性能品TO-252级别(6.5mm×9.5mm)的比较。 ! 减 低 5% ! s 5 .4倍 s o 2 r L 电流 e w Po 额定 目标市场 • • • • • 三洋独自技术达成业界最高性能 采用Clip bonding构造与MBITーW工艺! 封装技术 减! 削 ! 80% 削减 积 % 面 94 安装 材料 封装 手机 太阳电池Power Conditioner UPS DC Motor Inverter 以业界最小封装实现I 以业界最小封装实现IC=12A 特性改善,安装面积80%削减! TO-252 SOT-23 晶圆技术 ECH8202 （IC=12A) Emitter Base Clip Bonding构造 2SC6022 ( IC=9A) 61.75mm2 8.12mm2 △80% MBIT-W工艺 *该资料记载内容, 包括价格, 规格等, 均为记者发布会时情报。最新内容可能发生变化, 望谅解。 http://semicon.cn.sanyo.com/ 三洋半导体公司 20090717－1/2 发布版产品话题 低损失双极晶体管: ECH系列 三洋独自技术 Clip Bonding 构造 Multi-Base Island Transistor - Wireless 他社工艺 MBIT-W工艺 Emitter Pad Emitter Pad 有效领域 有效领域 Pad下 没有有效领域 Clip Bonding技术 • 超小型的铜Frame。截面大,因此配线阻值低。 Pad下 有 有效领域 Side View Molding Emitter Pad Chip Frame Emitter Pad Frame Base Base 有效领域增大了70%! (特性提高了70%) 封装阻值80%低减 电力损失, 额定电流的比较 与三洋以往品的热比较 与业界以往最高制品的额定电流比较 16 三洋以往品 (2SC6022) 60 ECH8202 ECH8202 高电流化 VCE(sat) *3 (mV) 与以往业界最高制品的电力损失比较 80 额定电流(A) 电力损失 40 20 ECH8202 80.2℃ 45.5℃ (电力损失0.74W) 0 0 10 20 小型化 30 40 (电力损失0.34W) 50 12 8 4 0 安装面积(mm2) 0 10 小型化 20 30 40 50 安装面积（mm2) *3: VCE(sat):在IB=100mA时,为达到IC=2A 在集电极与发射极之间印加的电压。 由于计算为VCE(sat) × IC, 故VCE(sat)越小, 功耗就越小。 规格 BIP Single VCEO IC PD V A W -30 -12 Type No. Polarity ECH8102 PNP ECH8202 NPN 30 12 ECH8101 PNP -50 -10 ECH8201 NPN 50 10 VCS(sat) 1.6*4 IC(A) IB(mA) typ(mV) max(mV) -2 -40 -50 -85 2 40 35 50 -2 -40 -70 -120 2 40 50 75 *4: 当安装Ceramic板 (1000mm2×0.8mm)时 BIP+MOS 2in1 Type No. Polarity VCEO/ VDSS PNP Pch -12 -4 IC/ID PD V A W -30 -3 ECH8901 http://semicon.cn.sanyo.com/ 1.3*4 VCE(sat) RDS(on) IC(A) IB(mA) typ(mV) max(mV) VGSS(V) ID(A) Typ(mΩ) Max(mΩ) -1.5 -75 -90 -135 - - - - - - - - -2.5 -1.5 31 45 三洋半导体公司 20090717－2/2 T OP I C S N e w s R e l e a s e P r o d u c t Topics Released on July 17, 2009 Low-loss Bipolar Transistor: ECH-Series Good for heat solution and miniaturization of the end product! Power loss 55% reduced*1 Flat Panel Display Solar cell power conditioner *1: as of July 17, 2009, among SOT23 class. ECH8101, ECH8102 ECH8201, ECH8202 ECH8901 MP starts from Aug. 2009. 1Million Pcs/Month (peak time) Sample price: @50 Yen~ Target Market & Main Features • The industry’s lowest*1 power loss: 55% lower*1 than that of conventional products • The industry’s largest*1 current 12A: 2.4times*1 of that of conventional products. • Small size: 94% reduction*2 in package materials, source-saving. *1: As of July 17th 2009, comparison among SOT23 class. *2: Comparison with TO-252 class equivalent-performance products. d! ce u red ! % mes 5 i 5 s: 2.4 t s o : l er rrent w Po Cu • cell phone • solar cell power conditioner • UPS • DC motor • inverter The highest performance with unique tech. Packaging tech. ! ced u d re 0% erial: 8 : at ea t a r a g e m c e d! n u u Mo Pack red % 4 9 Target Market: Wafer tech. IC=12A realized with the smallest size TO-252 ECH8202 (IC=12A) Emitter Base Clip bonding structure SOT-23 MBIT-W process 2SC6022 (IC=9A) 61.75mm2 8.12mm2 Δ 80% *All the information in this paper, including prices and specifications, is as of July 17, 2009, and is subject to change without advance notice. www.semiconductor-sanyo.com/network 20090717-1/2 Released Product Topics Low-loss Bipolar Transistor: ECH Series Original tech. Clip Bonding Structure Multi-Base Island Transistor - Wireless Other companies’ process MBIT-W process Emitter Pad Emitter Pad Effective area Effective area There is no effective area under the emitter pad. Clip Bonding Tech. • Very small Cu frame. Wiring resistance is reduced due to large section area. Effective area also exists under the emitter pad. Side View Mold Emitter Pad Chip Frame Frame Emitter Pad Base Base Effective area: 70% increased! (characteristic: 70% UP) Package resistance: 80% reduced! Comparison in Power Loss & Rated Current Power Loss Comparison Heat Comparison (with Sanyo’s conventional product) Rate Current Comparison 80 16 Sanyo’s earlier (2SC6022) ECH8202 ECH8202 high 60 12 8 40 Rated current (A) Low power loss VCE(sat) *3 (mV) (with conventional highest-performance product) 20 ECH8202 45.5 °C 80.2°C (power loss 0.74W) 0 0 10 20 30 40 (power loss 0.34W) 50 4 0 0 10 small Small Mount area(mm2) *3: VCE(sat) is a voltage applied between collector and emitter for assuring IC=2A at the time of IB=100mA. Because power loss is VCE(sat)×IC, the smaller VCE(sat) is, the lower the power loss becomes. 20 30 40 50 Mount area(mm2) Specifications BIP Single VCEO IC PD V A W -30 -12 Type No. Polarity ECH8102 PNP ECH8202 NPN 30 12 ECH8101 PNP -50 -10 ECH8201 NPN 50 10 VCE(sat) 1.6*4 IC(A) IB(mA) typ(mV) max(mV) -2 -40 -50 -85 2 40 35 50 -2 -40 -70 -120 2 40 50 75 *4: when mounted on ceramic board (1000mm2×0.8mm) BIP+MOS composite type Type No. Polarity VCEO/ VDSS PNP Pch -12 -4 IC/ID PD V A W -30 -3 ECH8901 www.semiconductor-sanyo.com/network 1.3*4 VCE(sat) RDS(on) IC(A) IB(mA) typ(mV) max(mV) VGSS(V) ID(A) Typ(mΩ) Max(mΩ) -1.5 -75 -90 -135 - - - - - - - - -2.5 -1.5 31 45 20090717-2/2