KK2000A1600V 国标型-快速晶闸管(平板式) Chinese Type Fast Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Interdigitated amplifying gates 2). Fast turn-on and high di/dt 3). Low switching losses TYPICAL APPLICATIONS 1). Inductive heating 2). Electronic welders 3). Self-commutated inverters IT(AV) VDRM/VRRM tq ITSM I2t 1827A 800~1800V 35~60μs 23KA 2645 103A2S THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) IT(AV) Mean forward current 180° half sine wave 50Hz Double side cooled, Ths=55℃ 125 VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr Reverse recovery current Reverse recovery time Recovery charge tq Circuit commutated turn-off time IGT VGT IH VGD Rth(j-h) Fm Tstg Wt Outline Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Thermal resistance Junction to heatsink VALUE Type 800 Max UNIT 1827 A 1800 V 160 mA KA A2s*103 V mΩ V V/μs ITM=4000A, F=35KN VDM=0.67VDRM 125 125 23 2645 1.45 0.21 2.29 500 VDM= 67%VDRM to3000A, Gate pulse tr ≤0.5μs IGM=1.5A 125 1200 A/μs ITM=2000A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 700 A μs μC ITM=2000A,tp=1000μs, VR =50V dv/dt=30V/μs ,di/dt=-20A/μs 125 35 60 μs VA=12V, IA=1A 25 VDM=67%VDRM 450 4.5 1000 125 40 0.9 20 0.3 mA V mA V 0.016 ℃ /W 40 140 KN ℃ g 125 152 8.5 646 At 180°sine, double side cooled Clamping force 35KN 30 -40 Mounting force Stored temperature Weight www.china-liujing.com Min 900 KT60cT70 1/3 KK2000A1600V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<..( Vs.Peak On-state Current Instantaneous on-state voltage,volts Transient thermal impedance,e C/W T J=125e C Instantaneous on-state current,amperes Fig.1 Time,seconds Fig.2 2645 23 I t Vs.Time 2 23 Surge Current Vs.Cycles 3000 2500 Maximum I t(Kamps ,secs) 2 2000 2 Total peak half-sine surge current,kA 1500 1000 Cycles at 50Hz 500 1 Fig.3 Fig.4 Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 4.590$ -30e C PD[ 3*0 : VVSXOVH Gate voltage,VGTˈ V Gate voltage,VGTˈ V 10 Time,m.seconds PLQ -10e C 25e C 125e C 3*: Gate current,IGT ˈA Fig.5 www.china-liujing.com Gate current,IGT ˈmA Fig.6 2/3 KK2000A1600V 26f0.5 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3