KP1000A1600V 国标型-普通晶闸管(平板式) Chinese Type Fast Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Center amplifying gate 2). Metal case with ceramic insulator 3). Low on-state and switching losses TYPICAL APPLICATIONS 1). AC controllers 2). DC and AC motor control 3). Controlled rectifiers IT(AV) VDRM/VRRM ITSM I2t 1271A 1100~1800V 13 KA 845 103A2S THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) 180 half sine wave 50Hz Ths=55℃ Double side cooled, Ths=75℃ 125 Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr IGT VGT IH VGD Reverse recovery current Reverse recovery time Recovery charge Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Rth(j-h) Thermal resistance Junction to heatsink Fm Tstg Wt Outline Mounting force Stored temperature Weight www.china-liujing.com VALUE Type O IT(AV) Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Min 1100 Max UNIT 1271 1000 A 1800 V 60 mA 13 845 0.93 0.29 KA ITM=3000A, F=21KN VDM=0.67VDRM 125 125 1.80 1000 A s*103 V mΩ V V/μs VDM= 67%VDRM to1500A, Gate pulse tr ≤0.5μs IGM=1.5A 125 500 A/μs 184 17.2 1581 300 3.0 250 A μs μC 0.030 ℃ /W 25 140 KN ℃ 125 ITM=1000A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 VA=12V, IA=1A 25 VDM=0.67VDRM 125 40 0.8 20 0.3 At 180°sine, double side cooled Clamping force 21KN 18 -40 400 2 mA V mA V g KT44cT 1/3 KP1000A1600V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<.3( Vs.Peak On-state Current Instantaneous on-state voltage,volts Transient thermal impedance C/W T J=125e C Instantaneous on-state currant,amperes Fig.1 <.3( Max. Power Dissipation Vs.Mean On-state Current Conduction Angle <.3( On-state Current Max. heatsink Temperature Vs.Mean Conduction Angle Fig.3 Conduction Angle 360 Heatsink temperature,e C Conduction Angle '& 360 <.3( Max. heatsink Temperature Vs.Mean On-state Current <.3( Max. Power Dissipation Vs.Mean On-state Current Fig.4 Max.on-state dissipation ,watts Mean on-state current,amperes Mean on-state current,amperes Mean on-state current,amperes '& Mean on-state current,amperes Fig.5 Fig.6 2 Surge Current 13 Vs.Cycles 13 I 845 t Vs.Time 900 Maximum I2t(Kamps2,secs) Total peak half-sine surge current,kA 800 700 600 500 400 300 200 Cycles at @ 50Hz Fig.7 www.china-liujing.com Heatsink temperature,e C Max.on-state dissipation ,watts Fig.2 Time,seconds 10 1 Time,m.seconds Fig.8 2/3 KP1000A1600V Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 90$ PD[ PGM=120W (100嘕s spulse) Gate voltage,VGTˈV Gate voltage,VGTˈV -30e C PLQ -10e C 25e C 125e C 3*: Gate current,IGTˈA Gate current,IGTˈmA Fig.9 Fig.10 26 0.5 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3