KP1300A5600~6500V Y76KPR 国标型-普通晶闸管(平板式) Chinese Type Phase Control Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Center amplifying gate 2). Metal case with ceramic insulator 3). Low on-state and switching losses TYPICAL APPLICATIONS 1). AC controllers 2). DC and AC motor control 3). Controlled rectifiers IT(AV) VDRM/VRRM ITSM I2t 2291 A 5600-6500V 22 KA 2420 103A2S THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) 180 half sine wave 50Hz Ths=55℃ Double side cooled, Ths=95℃ 125 Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr IGT VGT IH VGD Reverse recovery current Reverse recovery time Recovery charge Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Rth(j-h) Thermal resistance Junction to heatsink Fm Tstg Wt Size Mounting force Stored temperature Weight Package box size www.china-liujing.com VALUE Type O IT(AV) Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Min 5600 Max UNIT 2291 1300 A 6500 V 250 mA 22 2420 1.20 0.28 KA ITM=1600A, F=40KN VDM=0.67VDRM 125 125 1.65 2000 A s*103 V mΩ V V/μs VDM= 67%VDRM to3000A, Gate pulse tr ≤0.5μs IGM=1.5A 125 200 A/μs 250 26 3250 300 3.0 250 A μs μC 0.010 ℃ /W 47 140 KN ℃ 125 ITM=2000A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 VA=12V, IA=1A 25 VDM=67%VDRM 125 40 0.8 20 0.3 At 180°sine, double side cooled Clamping force 40KN 35 -40 1300 160×145×65 2 mA V mA V g mm 1/3 KP1300A5600~6500V PERFORMANCE CURVES FIGURE Impedance Vs.Time Max. junction To case Thermai Peak On-state Voltage<.35 Vs.Peak On-state Current Transient thermal impedance C/W Instantaneous on-state voltage,volts T J=125e C Instantaneous on-state currant,amperes Fig.1 Max. Power Dissipation Vs.Mean On-state Current <.35 Conduction Angle Conduction Angle Mean on-state current,amperes Max. Power Dissipation Vs.Mean On-state Current <.35 360 <.35 Max. heatsink Temperature Vs.Mean On-state Current 360 case temperature,e C Conduction Angle '& Fig.4 Mean on-state current,amperes Fig.3 Max.on-state dissipation ,watts Conduction Angle '& Mean on-state current,amperes Mean on-state current,amperes Fig.5 Fig.6 2 Surge Current 22 Vs.Cycles I 2420 t Vs.Time 22 2700 2400 2 Maximum2 I t(Kamps ,secs) Total peak half-sine surge current,kA case temperature,e C Max.on-state dissipation ,watts Max. heatsink TemperatureY76KPR Vs.Mean On-state Current 2100 1800 1500 1200 900 600 Cycles,@ 50Hz Fig.7 www.china-liujing.com Fig.2 Time,seconds 1 Time,m.seconds 10 Fig.8 2/3 KP1300A5600~6500V Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 90$ PD[ Gate voltage,VGTˈV Gate voltage,VGTˈV PLQ 3*: -30e C 3*0 : VVSXOVH -10e C 25e C 125e C Gate current,IGT ˈA Fig.9 Gate current,IGTˈmA Fig.10 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3