KP200A1100~1800V(凹形) Y30KPEA 国标型-普通晶闸管(平板式) L iu j in g re ct i f ie r c o . , L t d . 特点 1). 分布式放大门极结构 2). 快速开关和高di/dt 3). 低开关损耗 典型应用 IT(AV) VDRM/VRRM tq ITSM 1). 逆变器 2). 斩波器 3). 感应加热 200 A 1100-1800V 2.5 KA 32KA 主要参数 符号 参数 测试条件 IT(AV) 通态平均电流 180°正弦半波,50Hz双面散热,Ths=106℃ VDRM VRRM 断态重复峰值电压 反向重复峰值电压 VDRM&VRRM, tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM 断态重复峰值电流 反向重复峰值电流 VD=VDRM VR=VRRM 125 ITSM 通态不重复浪涌电流 I2t 浪涌电流平方时间积 10ms底宽正弦半波 VR=0.6VRRM 125 VTO 门槛电压 rT 斜率电阻 参数值 结温 Tj(℃) 180°正弦半波,50Hz双面散热,Ths=55℃ 最小 典型 125 单位 最大 200 487 1100 125 A 1800 V 30 mA 2.5 KA 32 A2s*103 0.89 V 1.10 mΩ VTM 通态峰值电压 ITM=600A, F=7.0KN 25 2.40 V dv/dt 断态电压临界上升率 VDM=67%VDRM 125 300 V/μs di/dt 通态电流临界上升率 VDM= 67%VDRM to 800A, 门极脉冲 tr≤0.5μs IGM＝1.5A重复值 125 100 A/μs Irm 反向恢复电流 反向恢复时间 125 12 A μs Qrr 恢复电荷 ITM=500A,tp=1000μs, di/dt=-20A/μs, VR=50V 100 trr 600 μC IGT 门极触发电流 250 mA VGT 门极触发电压 IH 维持电流 VGD 门极不触发电压 VDM=67%VDRM Rth(j-h) 热阻抗(结至散热器) 180°正弦波，双面散热；压紧力 7.0KN Fm 安装力 5.3 Tstg 存储温度 -40 Wt 质量 Size 包装盒尺寸 www.china-liujing.com 35 25 VA=12V, IA=1A 125 0.8 2.0 V 20 150 mA 0.065 V ℃ /W 0.3 12 140 55 95×95×50 KN ℃ g mm 1/3 KP200A1100~1800V(凹形) 性能曲线图 Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<.3($ Vs.Peak On-state Current ⶀᗕ⛁䰏ᡫZth,e C/W TJ=125e C 䗮ᗕዄؐ⬉य़VTM ,V 䗮ᗕዄؐ⬉⌕ITM,A Max. Power Dissipation Vs.Mean On-state Current <.3($ Max. heatsink Temperature Vs.Mean On-state Current <.3($ Conduction Angle 䗮ᗕᑇഛ⬉⌕IT(AV),A 䗮ᗕᑇഛ⬉⌕IT(AV)ˈA Fig.3᳔ࡳ㗫Ϣᑇഛ⬉⌕݇㋏᳆㒓 Fig.4ᬷ⛁఼⏽ᑺϢ䗮ᗕᑇഛ⬉⌕݇㋏᳆㒓 Max. Power Dissipation Vs.Mean On-state Current <.3(.$ <.3($ Max. heatsink Temperature Vs.Mean On-state Current '& 360 Conduction Angle ᬷ⛁఼⏽ᑺThs(max),e C ᳔䗮ᗕࡳ㗫PT(AV)(max)% W 360 Conduction Angle '& 䗮ᗕᑇഛ⬉⌕IT(AV),A 䗮ᗕᑇഛ⬉⌕IT(AV)ˈA Fig.5 ᳔ࡳ㗫Ϣᑇഛ⬉⌕݇㋏᳆㒓 Fig.6 ᬷ⛁఼⏽ᑺϢ䗮ᗕᑇഛ⬉⌕݇㋏᳆㒓 Surge Current 2.5 Vs.Cycles 2 2.5 I 31.25 t Vs.Time 35 ⬉⌕ᑇᮍᯊ䯈⿃I2t,103A2S 䗮ᗕ⌾⍠⬉⌕ITSM ,KA Conduction Angle 30 25 20 15 10 5 ਼⊶᭄n,@ 50Hz Fig.7 䗮ᗕ⌾⍠⬉⌕Ϣ਼⊶᭄ⱘ݇㋏᳆㒓 www.china-liujing.com ᬷ⛁఼⏽ᑺThs(max),e C ᳔䗮ᗕࡳ㗫PT(AV)(max)% W Fig.2 㒧㟇ᬷ⛁఼ⶀᗕ⛁䰏ᡫ᳆㒓 ᯊ䯈W6 Fig.1䗮ᗕӣᅝ⡍ᗻ᳆㒓 1 10 ᯊ䯈t,ms 2 Fig.8 I t⡍ᗻ᳆㒓 2/3 Y30KPEA KP200A1100V(凹形) Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 9P$ -30e C PGM=100W (100嘕 s 㛝ᆑ PD[ 25e C 䮼ᵕ⬉य़VGT,V 䮼ᵕ⬉य़VGT,V -10e C PLQ 3* : 125e C 䮼ᵕ⬉⌕IGT,A Fig.9 䮼ᵕࡳ⥛᳆㒓 䮼ᵕ⬉⌕IGT,A Fig.10 䮼ᵕ㾺থ⡍ᗻ᳆㒓 外形尺寸图 E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3