S25RIA Medium Power Thyristors STUD VERSION L iu j in g re ct i f ie r c o . , L t d . FEATURES TYPICAL APPLICATIONS 1). Improved glass passivation for high reliability and exceptional stability at high temperature 2). High di/dt and dv/dt capabilities 3). Standard package 4). Low thermal resistance 5). Metric threads version available 6). Types up to 1600V VDRM/ VRRM 1). Medium power switching 2). Phase control applications 3). Can be supplied to meet stringent military, aerospace and other high-reliability requirements MAJOR RATINGS AND CHARACTERISTICS Parameters IF(AV) @ TC IF(RMS) IFSM I2t @ 50Hz @ 60Hz @ 50Hz @ 60Hz VDRM/VRRM Tq TJ S25RIA 10 to 120 140 to 160 25 85 40 420 440 867 790 100 to 1200 25 85 40 398 415 795 725 1400 to 1600 typical 110 - 65 to 125 Unit A ℃ A A A A2s A2s V μs ℃ ELECTRICAL SPECIFICATIONS 1). Voltage Ratings Type number S25RIA Voltage Code VDRM/VRRM, maximum repetitive peak reverse voltage *(1) V VRSM, maximum nonrepetitive peak reverse voltage *(2) V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 IDRM/IRRM max. @ TJ = TJ max mA 20 10 *(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs *(2) For voltage pulses with tp ≤ 5ms www.china-liujing.com 1/7 S25RIA 2). Forward Conduction Parameters IT(AV) 2 It 2 I √t 10 to 120 140 to 160 Unit Max. average forward current 25 25 A @ Case temperature 85 85 ℃ 40 40 A 420 398 Max. peak, one-cycle forward, 440 415 non-repetitive surge current 350 335 370 IT(RMS) Max. RMS forward current ITSM S25RIA 2 Maximum I t for fusing 2 Maximum I √t for fusing Conditions 180° conduction, half sine wave t = 10ms No voltage t = 8.3ms reapplied t = 10ms 100% VRRM 350 t = 8.3ms reapplied 867 795 t = 10ms No voltage 790 725 t = 8.3ms reapplied 615 560 t = 10ms 100% VRRM 560 510 t = 8.3ms reapplied 8670 7950 VT(TO)1 Low level value of threshold voltage 0.99 0.99 VT(TO)2 High level value of threshold voltage 1.40 1.15 rt1 Low level value of forward slope resistance 10.1 11.73 rt2 High level value of forward slope resistance 5.7 10.05 1.71 - - 180 VTM Max. forward voltage drop IH Maximum holding current 130 IL Typical latching current 200 A 2 As 2 A √s V mΩ V mA Sinusoidal half wave, Initial TJ = TJ max. t = 0.1 to 10ms, no voltage reapplied (16.7%xπx IF(AV)<I<πx IF(AV)), TJ=TJ max. (I >π x IF(AV)), TJ = TJ max. (16.7% xπx IF(AV)<I<πxIF(AV)), TJ=TJ max. (I > π x IF(AV)), TJ = TJ max. Ipk= 50A, TJ = 25℃ tp = 10ms sine pulse TJ = 25°C, anode supply 12V resistive load Max. rate of rise of turned-on current TJ = TJ max., VDM = rated VDRM VDRM ≤ 600V 200 VDRM ≤ 800V 180 VDRM ≤ 1000V 160 VDRM ≤ 1600V 150 tgt Typical turn-on time 0.9 TJ=25℃, at = rated VDRM/VRRM, TJ=125℃ trr Typical reverse recovery time 4 TJ=TJ max., ITM=IT(AV), tp>200μs, di/dt = -10A/μs di/dt A/μs tr = 0.1μs max. ITM = (2x rated di/dt) A μs tq Typical turn-off time Gate pulse = 20V, 15Ω, tp = 6μs, TJ = TJ max., ITM = IT(AV), tp > 200μs, VR = 100V, di/dt = -10A/μs, dv/dt = 20V/μs 110 linear to 67% VDRM, gate bias 0V-100W dv/dt Max. critical rate of rise of off-state voltage 100 300 (*) V/μs TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (*) tq = 10μsup to 600V, tq = 30μs up to 1600V available on special request. (**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. S25RIA120S90. www.china-liujing.com 2/7 S25RIA 3). Triggering Parameters PGM S25RIA Maximum peak gate power 8.0 PG(AV) Maximum average gate power IGM -VGM Unit 2.0 W TJ = TJ max. Max. peak positive gate current 1.5 A TJ = TJ max. Maximum peak negative gate voltage 10 V TJ = TJ max. TJ = - 65℃ 90 IGT VGT IGD VGD Conditions DC gate current required to trigger 60 DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger mA voltage are the lowest value which TJ = 25℃ will trigger all units 6V anode-to- 35 TJ = 125℃ 3.0 TJ = - 65℃ 2.0 V TJ = 25℃ 1.0 V TJ = 125℃ 2.0 mA 0.2 V TJ Max. operating temperature range - 65 to 125 ℃ Tstg Max. storage temperature range - 65 to 125 ℃ Max. required gate trigger current/ cathode applied TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value Max. gate current/ voltage not to trigger is the max. value which. will not trigger any unit with rated V DRM anode-to-cathode applied RthJC Max. thermal resistance, junction to case 0.75 K/W DC operation RthCS Max. thermal resistance, case to heatsink 0.35 K/W Mounting surface, smooth, flat and greased T Mounting torque wt Approximate weight to nut to device 20(27.5) 25 lbf-in Lubricated threads 0.23(0.32) 0.29 kgf.m (Non-lubricated threads) 2.3(3.1) 2.8 Nm 14 (0.49) g (oz) See Outline Table TO-65 Case style ΔRthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.17 0.13 120° 0.21 0.22 90° 0.27 0.30 60° 0.40 0.42 30° 0.69 0.70 www.china-liujing.com Units Conditions K/W TJ = TJ max. 3/7 S25RIA 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& PERFORMANCE CURVES FIGURE WR9 5'& .: WK-& &RQGXFWLRQ$QJOH e e e e e WR9 5'& .: WK-& &RQGXFWLRQ3HULRG e e e '& $YHUDJH2QVWDWH&XUUHQW$ $YHUDJH2QVWDWH&XUUHQW$ )LJ&XUUHQW5DWLQJV&KDUDFWHULVWLF )LJ&XUUHQW5DWLQJV&KDUDFWHULVWLF e e e e e . : 5 OWD 'H . : : . 6$ 5 WK 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: e e . : . : 506/LPLW . : &RQGXFWLRQ$QJOH WR9 7 - e& $YHUDJH2QVWDWH&XUUHQW$ 0D[LPXP$OORZDEOH$PELHQW7HPSHUDWXUHe& '& e e e e e . : 5 WD HO ' : . 6$ WK 5 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV . : . : 506/LPLW . : &RQGXFWLRQ3HULRG . : WR9 7 e& - $YHUDJH2QVWDWH&XUUHQW$ 0D[LPXP$OORZDEOH$PELHQW7HPSHUDWXUHe& $W$Q\5DWHG/RDG&RQGLWLRQ$QG:LWK 5DWHG9$SSOLHG)ROORZLQJ6XUJH 550 ,QLWLDO7 e& - #+]V #+]V WR9 1XPEHU2I(TXDO$PSOLWXGH+DOI&\FOH&XUUHQW3XOVHV1 )LJ0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW www.china-liujing.com 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV 0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW 9HUVXV3XOVH7UDLQ'XUDWLRQ&RQWURO 2I&RQGXFWLRQ0D\1RW%H0DLQWDLQHG ,QLWLDO7 e& 1R9ROWDJH5HDSSOLHG 550 5DWHG95HDSSOLHG WR9 3XOVH7UDLQ'XUDWLRQV )LJ0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW 4/7 S25RIA ,QVWDQWDQHRXV2QVWDWH&XUUHQW$ WR9 7 - e& 7 - e& ,QVWDQWDQHRXV2QVWDWH9ROWDJH9 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& )LJ)RUZDUG9ROWDJH'URS&KDUDFWHULVWLFV WR9 5'& .: WK-& &RQGXFWLRQ$QJOH e e e e e WR9 5'& .: WK-& &RQGXFWLRQ3HULRG e e e e e '& $YHUDJH2QVWDWH&XUUHQW$ )LJ&XUUHQW5DWLQJV&KDUDFWHULVWLFV )LJ&XUUHQW5DWLQJV&KDUDFWHULVWLFV D5 HOW ' 506/LPLW . : . : . : . : . : : . 6$ 5 WK : . e e e e e : . : . 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: $YHUDJH2QVWDWH&XUUHQW$ &RQGXFWLRQ$QJOH . : WR9 7 - e& $YHUDJH2QVWDWH&XUUHQW$ 0D[LPXP$OORZDEOH$PELHQW7HPSHUDWXUHe& &RQGXFWLRQ3HULRG 5 OWD 506/LPLW 'H . : . : . : . : . : . : . : : . $ K6 5 W '& e e e e e : . 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV WR9 7 e& - $YHUDJH2QVWDWH&XUUHQW$ 0D[LPXP$OORZDEOH$PELHQW7HPSHUDWXUHe& )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV www.china-liujing.com 5/7 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ S25RIA $W$Q\5DWHG/RDG&RQGLWLRQ$QG:LWK 5DWHG9$SSOLHG)ROORZLQJ6XUJH 550 ,QLWLDO7 e& - #+]V #+]V WR9 0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW 9HUVXV3XOVH7UDLQ'XUDWLRQ&RQWURO 2I&RQGXFWLRQ0D\1RW%H0DLQWDLQHG ,QLWLDO7 e& 1R9ROWDJH5HDSSOLHG 5DWHG95HDSSOLHG 550 WR9 1XPEHU2I(TXDO$PSOLWXGH+DOI&\FOH&XUUHQW3XOVHV1 3XOVH7UDLQ'XUDWLRQV )LJ0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW )LJ0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW ,QVWDQWDQHRXV2QVWDWH&XUUHQW$ 7 - e& 7 - e& WR9 ,QVWDQWDQHRXV2QVWDWH9ROWDJH9 7UDQVLHQW7KHUPDO,PSHGDQFH=.: WK-& )LJ)RUZDUG9ROWDJH'URS&KDUDFWHULVWLFV 6WHDG\6WDWH9DOXH 5 .: WK-& '&2SHUDWLRQ 6TXDUH:DYH3XOVH'XUDWLRQV )LJ7KHUPDO,PSHGDQFH= &KDUDFWHULVWLFV WK-& 5HFWDQJXODUJDWHSXOVH D5HFRPPHQGHGORDGOLQHIRU UDWHGGLGW9RKPV WU 嘕VWS! 嘕V E5HFRPPHQGHGORDGOLQHIRU UDWHGGLGW9RKPV WU 嘕VWS! 嘕V 3*0 3*0 3*0 3*0 :WS :WS :WS :WS PV PV PV PV D E 9*' 7M e& 7M e& 7M e& ,QVWDQWDQHRXV*DWH9ROWDJH9 ,*' )UHTXHQF\/LPLWHGE\3*$9 ,QVWDQWDQHRXV*DWH&XUUHQW$ )LJ*DWH&KDUDFWHULVWLFV www.china-liujing.com 6/7 S25RIA OUTLINE Case Style TO-65 E-mail: [email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 7/7