SKT55 Line Thyristor STUD VERSION L iu j in g re ct i f ie r c o . , L t d . FEATURES TYPICAL APPLICATIONS 1). Hermetic metal case with glass insulator 2). Threaded stud ISO M12 3). International standard case 1). DC motor control (e.g. for machine tools) 2). Controlled rectifiers (e.g. for battery charging) 3). AC controllers (e.g. for temperature control) 4). Recommended snubber network: e.g. for VVRMS≤400V: R=47Ω/10W, C=0.22μF MAJOR RATINGS AND CHARACTERISTICS VRSM VRRM, VDRM V V ITRMS=110A (maximum value for continuous operation) ITAV=55A (sin. 180°; TC=92℃) 500 400 SKT 55/04D 700 600 SKT 55/06D 900 800 SKT 55/08D 1300 1200 SKT 55/12E 1500 1400 SKT 55/14E 1700 1600 SKT 55/16E 1900 1800 SKT 55/18E 1)* Available with UNF thread 1/4-28 UNF2A, e.g. SKT 16/06D UNF ELECTRICAL SPECIFICATIONS Symbol ITAV ID IRSM ITSM 2 It Conditions Values V 47(63) A K3; Ta=45℃; B2/B6 42/60 A K1.1; Ta=45℃; B2/B6 76/110 A 46 A sin. 180; TC=100(85)℃ K3; Ta=45℃; W1C Tvj=25℃; 10ms 1300 A Tvj=130℃; 10ms 1100 A Tvj=25℃; 8,35 ... 10ms 8500 A2S 6000 A2S Tvj=25℃; IT=200A max. 1.8 V VT(TO) Tvj=130℃ max. 0.9 V rT Tvj=130℃ max. 4 mΩ Tvj=130℃; VRD=VRRM; VDD=VDRM max. 25 mA tgd Tvj=25℃; IG=1A; diG /dt=1Aμs 1 μs tgr VD=0.67 * VDRM 2 μs max. 50 A/μs max. 500/1000 V/μs 100 μs Tvj=130℃; 8,35 ... 10ms VT IDD; IRD (di/dt)cr (dv/dt)cr Tvj=130℃ Tvj=130℃; SKT ... D/SKT ... E tq Tvj=130℃ IH Tvj=25℃; typ./max. 150/250 mA IL Tvj=25℃; typ./max. 300/600 mA www.china-liujing.com 1/4 SKT55 Symbol Conditions Values V VGT Tvj=25℃; d.c. min.3 V IGT Tvj=25℃; d.c. min.150 mA VGD Tvj=130℃; d.c. max.0.25 V IGD Tvj=130℃; d.c. max.10 mA Rth(j-c) cont. 0.4 K/W Rth(j-c) sin.180 0.47 K/W Rth(j-c) rec.120 0.53 K/W Rth(c-s) 0.08 K/W Tvj -40 ... +130 ℃ Tstg -55 ... +150 ℃ Visol - V~ 10 Nm 5*9.81 m/s2 65 g to heatsink Ms a m approx. Case B5 PERFORMANCE CURVES FIGURE .xls-1L 150 W sin. 180 .xls-1R 150 0.8 0.7 0.9 W rec. 120 rec. 60 rec. 90 100 rec. 15 1.4 50 1.6 1.8 2 50 PTAV 2.5 3 4 PTAV 0 ITAV 25 50 A Rth(j-a) 1.1 1.2 100 cont. 0 0.5 1.0 rec. 180 rec. 30 0.6 0.4 75 K/W 0 0 Fig. 1L Power dissipation vs. on-state current Ta 50 ℃ 100 xls-02 100 .xls-03 1000 A ITM= cont. 80 500A 200A 100A 50A μC rec. 180 sin. 180 rec. 120 60 sin. 120 sin. 90 sin. 60 40 sin. 30 20 sin. 15 20A rec. 90 100 rec. 60 rec. 30 rec. 15 Qrr ITAV Tvj=130℃ 0 0 TC 10 50 100 ℃ 150 Fig. 2 Rated on-state current vs. case temperature www.china-liujing.com 150 Fig. 1R Power dissipation vs. ambient temperature 1 -diT/dt 10 A/μs 100 Fig. 3 Recovered charge vs. current decrease 2/4 SKT55 .xls-04 0.5 .xls-05 0.7 Zth(j-s) K/W K/W 0.4 θ 380° 180° 120° 90° 60° 30° 15° 0.3 Z(th)z (K/W) sin. rec. 0.10 0.13 0.17 0.23 0.33 0.40 0 0.15 0.20 0.23 0.28 0.36 0.40 Zth(j-c) Rth(c-s) K3 - M12 3.10 K/W K1.1-M12 1.20 K/W K1.1-M12 0.40 K/Wγ6m/s 0.6 rec. 0.2 0.5 0.1 sin. Z(th)p=Z(th)t=Z(th)z Zth 0.0 0.001 t 0.01 0.1 1 Rth(j-c) 10 s Rth(j-c)(cont.) = 0.40 K/W 0.4 100 Fig. 4 Transient thermal impedance vs. time typ. A 60° 90° 120° 150° 180° Fig. 5 Thermal resistance vs. conduction angle .xls-06 300 θ 30° 0° .xls-07 500 max. sin. 180 W rec. 120 400 rec. 60 rec. 180 200 cont. 300 200 100 IT 100 Tvj = 25 ℃ Tvj = 130 ℃ PTAV 0 0 0 VT 0.5 1 1.5 2 V ITAV 0 2.5 Fig. 6 On-state characteristics 50 100 150 A 200 Fig. 7 Power dissipation vs. on-state current .xls-08 2.0 IT(OV) ITSM 1.6 ITSM(25℃) =1300 A ITSM(130℃) =1100 A 1.4 1.2 0.VRRM 0.5.VRRM 1.VRRM 1.0 0.8 0.6 0.4 t 1 10 100 ms 1000 Fig. 8 Surge overload curent vs. time .xls-09 100 V 15 20V; 20Ω 10 0W 10 50 W 0W (8 .5 m VGT 1 IG 0.01 s) m s) BSZ -40℃ Tvj = 25℃ 130℃ BMZ IGD(130°) 0.1 0.001 m < VGD(130°) VG s) (0 .0 (0 PG(tp) IGT 0.1 1 10 A 100 Fig. 9 Gate trigger characteristics www.china-liujing.com 3/4 SKT55 OUTLINE SKT8 E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 4/4