LESHAN RADIO COMPANY, LTD. Transient Voltage Suppressors for ESD Protection General Description LESD9B5.0ST5G The ESD9B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. SOD-923 Specification Features • • • • • • • • • • • Low Capacitance 15 pF Low Clamping Voltage Small Body Outline Dimensions: 0.039″ x 0.024″ (1.0mm x 0.60mm) Low Body Height: 0.016″ (0.4 mm) Stand−off Voltage: 3.3 V, 5 V Low Leakage Response Time is < 1 ns IEC61000−4−2 Level 4 ESD Protection AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements This is a Pb−Free Device We declare that the material of product compliance with RoHS requirements. Ordering information Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any Device Marking Shipping LESD9B5.0ST5G M 8000/Tape&Reel QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air IEC 61000−4−4 (EFT) Value Unit ±18 ±18 kV 40 A 300 mW Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction−to−Ambient RqJA 400 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) °PD° Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. 1/4 86-755-83468588 www.fazhanIC.com LESHAN RADIO COMPANY, LTD. LESD9B5.0ST5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR C IT VC VBR VRWM IR IR VRWM VBR VC IT Working Peak Reverse Voltage V Maximum Reverse Leakage Current @ VRWM VBR IT I Breakdown Voltage @ IT IPP Test Current Bi−Directional TVS Capacitance @ VR = 0 V and f = 1.0 MHz ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Device LESD9B5.0ST5G VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) Device Marking Max Max Min M 5.0 1.0 5.8 IT C (pF) VC VC (V) @ IPP = 1 A Max mA Typ Per IEC61000−4−2 (Note 3) Max Per 8 x 20 ms (Note 4) 7.8 1.0 15 Figures 1 and 2 See Below 12.5 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. Surge current waveforms per Figure 5. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 2/4 86-755-83468588 www.fazhanIC.com LESHAN RADIO COMPANY, LTD. LESD9B5.0ST5G IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 80 Figure 5. 8 X 20 ms Pulse Waveform 3/4 86-755-83468588 www.fazhanIC.com LESHAN RADIO COMPANY, LTD. LESD9B5.0ST5G SOD−923 D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E 1 b 2 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.003 0.030 0.022 0.037 0.002 INCHES NOM 0.015 0.008 0.005 0.031 0.024 0.039 0.004 MAX 0.016 0.010 0.007 0.033 0.026 0.041 0.006 SOLDERING FOOTPRINT* 0.90 0.40 0.30 DIMENSIONS: MILLIMETERS 4/4 86-755-83468588 www.fazhanIC.com