Production specification Small Signal Surface Mount Transistor FEATURES z Complementary pair. z One 3904-Type NPN MMDT3946 Pb Lead-free One 3906-Type PNP z Ideal for low power amplification and switching. z Ultra-Small surface mount package z Expitaxial planar die construction. SOT-363 APPLICATIONS z General switching and amplification ORDERING INFORMATION Type No. MMDT3946 MAXIMUM RATING Marking Package Code K46 SOT-363 NPN 3904 Section @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER VALUE UNIT VCBO collector-base voltage 60 V VCEO collector-emitter voltage 40 V VEBO emitter-base voltage 6 V IC collector current -continuous 0.2 A PD Power dissipation 0.2 W RθJA Thermal Resistance, Junction to Ambient 625 ℃/W MAXIMUM RATING PNP 3906 Section @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER VALUE UNIT VCBO collector-base voltage -40 V VCEO collector-emitter voltage -40 V VEBO emitter-base voltage -5.0 V IC collector current -continuous -0.2 A PD Power dissipation 0.2 W RθJA Thermal Resistance, Junction to Ambient 625 ℃/W Rev.A 1 Production specification Small Signal Surface Mount Transistor MMDT3946 ELECTRICAL CHARACTERISTICS NPN 3904 Section @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. V(BR)CBO Collector-base breakdown voltage IC=10μA,IE=0 60 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA,IB=0 40 V V(BR)EBO Emitter-base breakdown voltage IE=10μA,IC=0 5 V ICEX collector cut-off current VCE= 30V VEB(OFF)= 3.0V - 50 nA IBL Base cut-off current VCE= 30V VEB(OFF)= 3.0V - 50 nA DC current gain VCE=1V,IC= 0.1mA VCE=1V,IC=1mA VCE=1V,IC=10mA VCE=1V,IC=50mA VCE=1V,IC=100mA hFE VCE(sat) VBE(sat) 40 70 100 60 30 MAX. UNIT 300 - IC=10mA,IB =1.0mA - 200 mV IC=50mA,IB =5mA - 300 mV IC=10mA,IB =1mA 650 850 mV IC=50mA, IB =5mA - 950 mV collector-emitter saturation voltage base-emitter saturation voltage Cobo Output capacitance IE =0, VCB =5V; f =1MHz - 4 pF Cobi Input capacitance IC=0, VEB =0.5V; f =1MHz - 8 pF fT transition frequency IC=20mA,VCE=20V,f=100MHz 300 - MHz NF noise figure IC=0.1mA,VCE =5V,RS=1kΩ, f = 1kHz - 5 dB td delay time - 35 ns tr rise time - 35 ns ts storage time - 200 ns tf fall time - 50 ns Rev.A VCC=3V,VBE(off)=-0.5V IC=10mA,IB1=IB2=1mA VCC=3V,IC=10mA IB1=IB2=1mA 2 Production specification Small Signal Surface Mount Transistor MMDT3946 ELECTRICAL CHARACTERISTICS PNP 3906 Section @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. V(BR)CBO Collector-base breakdown voltage IC=-10μA,IE=0 -40 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA,IC=0 -5 V ICEX collector cut-off current VCE=-30V,VEB(OFF)=-3.0V - -0.05 μA IBL Base cut-off current VCE=-30V,VEB(OFF)=-3.0V - -0.05 μA DC current gain VCE =-1V,IC= -0.1mA VCE =-1V,IC =-1mA VCE =-1V,IC =-10mA VCE =-1V,IC =-50mA VCE =-1V,IC =-100mA hFE VCE(sat) MAX. UNIT 60 80 100 60 30 300 - IC =-10mA,IB =-1mA - -250 mV IC =-50mA,IB =-5mA - -400 mV IC =-10mA,IB =-1mA -650 -850 mV IC =-50mA, IB =-5mA - -950 mV - 4.5 pF 10 pF collector-emitter saturation voltage VBE(sat) base-emitter saturation voltage Cobo Output capacitance IE=0, VCB=-5V; f =1MHz Cobi Input capacitance IC=0, VEB=-0.5V; f =1MHz fT transition frequency IC=-10mA,VCE=-20V,f=100MHz 250 - MHz NF noise figure IC=-0.1mA,VCE=-5V,RS=1.0KΩ f=1.0kHz - 4 dB td delay time - 35 ns tr rise time - 35 ns ts storage time - 225 ns tf fall time - 75 ns Rev.A VCC=-3V,VBE(off)=0.5V IC=-10mA IB1=-IB2=-1mA VCC=-3V,IC=-10mA IB1=IB2=-1mA 3 Production specification Small Signal Surface Mount Transistor MMDT3946 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified lizhenhui13537087568 Rev.A 4 Production specification MMDT3946 Small Signal Surface Mount Transistor PACKAGE OUTLINE Plastic surface mounted package SOT-363 SOT-363 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.10 0.30 E 0.25 0.40 G H J K 0.65Typical 0.02 0.10 0.1Typical 2.1 2.3 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping MMDT3946 SOT-363 3000/Tape&Reel lizhenhui13537087568 Rev.A 5