Production specification SILICON BRIDGE RECTIFIERS TMBR6S08 FEATURES Pb z Ultra Low leakage current IR＜2μA，Ta=125℃ z No solder used，Real fully in line with lead free z Package Thickness is 1.2mm z High ESD >12KV（HBM MODEL） z Plastic material has U/L flammability classification 94V-0 z High temperature soldering guaranteed: 260°C/10s（Reflow） Lead-free 350°C/3s（Manual welding） APPLICATION z CFL rectify circuit MAXIMUM RATING （operating temperature range applies unless otherwise specified） Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 600 V VRMS RMS Voltage 420 V VDC DC Blocking Voltage 600 V 0.8 A 3 A 12 A 200 ℃/W -55 to +150 ℃ IF(AV) Imax IFSM RθJA Tj Tstg Average Forward Rectified Current@TA=25℃ Max continuous Forward Rectified Current@TA=25℃ Peak Forward Surge Current 8.3ms Single Half Sine-wave Thermal Resistance Operating Junction and StorageTemperature Range ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter IR Reverse Current VF Forward Voltage lizhenhui13537087568 1 Test conditions Value VRM=VRRM,TA=25℃ 0.5 VRM=VRRM,TA=125℃ 2.0 IF=0.4A ,TA=25℃ 1.0 Unit μA V Rev.A Production specification SILICON BRIDGE RECTIFIERS TMBR6S08 PACKAGE OUTLINE DIMENSIONS TMB Min Max A 4.50 4.70 B 3.60 3.80 Dim A J F H E C M G K L B C 1.20 TYP. E 0.45 0.65 F 2.40 2.60 G 0.50 0.70 H 0.05 0.15 J 0.20 TYP. K 6.60 7.00 L 5.10 5.50 M 0.90 1.10 All Dimensions in mm lizhenhui13537087568 2 Rev.A