SIRECTIFIER MBR580

MBR580 thru MBR5100
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MBR580
MBR5100
VRRM
V
80
100
VRMS
V
56
70
Symbol
VDC
V
80
100
Characteristics
@TC=125oC
I(AV)
Maximum Average Forward Rectified Current
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt
Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage (Note 1)
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
ROJC
Typical Junction Capacitance (Note 3)
TJ
Operating Temperature Range
TSTG
IF=5A @TJ=25 Co
IF=5A @TJ=125 Co
@TJ=25oC
@TJ=125oC
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
5
A
120
A
10000
V/us
0.85
0.75
V
0.05
10
mA
-
Typical Thermal Resistance (Note 2)
CJ
Dim.
400
Storage Temperature Range
o
C/W
pF
-50 to +150
o
-50 to +150
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
C
C
MBR580 thru MBR5100
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
140
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
8
6
4
RESISTIVE OR
INDUCTIVE LOAD
2
0
25
50
75
100
125
150
120
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
175
2
5
CASE TEMPERATURE
20
50
100
Figure 2. Maximum Non-repetitive Surge Current
Figure 1. Forward Current Derating Curve
100
INSTANTANEOUS FORWARD CURRENT, (A)
100
10
1.0
0.1
0.01
TJ=25
0.001
10
1.0
TJ=25
PULSE WIDTH 300us
2% Duty cycle
0.1
0
20
40
60
80
100
120
140
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Figure 3. Typical Reverse Characteristics
Figure 4. Typical Forward Characteristics
1000
CAPACITANCE, (pF)
INSTANTANEOUS REVERSE CURRENT, (mA)
10
NUMBER OF CYCLES AT 60Hz
100
TJ =25
f =1MHz
10
0.1
1
4
10
REVERSE VOLTAGE, VOLTS
Figure 5. Typical Junction Capacitance
100
1.0