SBG1025L thru SBG1030L Low VF Schottky Barrier Rectifiers Dimensions TO-263(D2PAK) C(TAB) A C A C A=Anode, C=Cathode, TAB=Cathode SBG1025L SBG1030L VRRM V 25 30 VRMS V 17.5 21 Symbol VDC V 25 30 1. 2. 3. 4. Characteristics Gate Collector Emitter Collector Botton Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC .380 .405 .245 .320 .100 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 R 0.46 0.74 .018 .029 Maximum Ratings Unit I(AV) Maximum Average Forward Rectified Current @TC=95oC 10 A IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) 250 A IF=10A @TJ=25oC IF=10A @TJ=125oC 0.45 0.35 V @TJ=25oC @TJ=100oC 5.0 500 mA VF Maximum Forward Voltage (Note 1) IR Maximum DC Reverse Current At Rated DC Blocking Voltage CJ Typical Junction Capacitance (Note 2) ROJC TJ TSTG 350 Typical Thermal Resistance (Note 3) 2.0 Operating Temperature Range Storage Temperature Range * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications C/W -55 to +125 o -55 to +150 o NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. FEATURES pF o MECHANICAL DATA * Case: D2PAK molded plastic * Polarity: As marked on the body * Weight: 0.06 ounces, 1.7 grams C C SBG1025L thru SBG1030L Low VF Schottky Barrier Rectifiers