SDD253 Diode-Diode Modules Dimensions in mm (1mm=0.0394") Type SDD253N08 SDD253N12 SDD253N14 SDD253N16 SDD253N18 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=100oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 400 253 A IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 11000 12150 10000 11071 A i2dt TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 596787 605000 490625 500000 A2s -40...+130 130 -40...+130 TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s Mounting torque (M6) Terminal connection torque (M6) Typical including screws o C 3000 3600 V~ _ _ 5+15%/44+15% _ _ 9+15%/80+15% Nm/lb.in. 940 g SDD253 Diode-Diode Modules Symbol IR Test Conditions TVJ=TVJM; VR=VRRM o Characteristic Values Unit 15 mA VF IF=750A; TVJ=25 C 1.25 V VTO For power-loss calculations only 0.90 V TVJ=TVJM 0.37 rT m QS - uC IRM - A RthJC per diode; DC current per module 0.14 0.07 o C/W RthCH per diode; DC current per module 0.04 0.02 o C/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Copper base plate with inter-DCB * Planar passivated chips * Isolation voltage 3600 V~ * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD253 Diode-Diode Modules 2 SDD253 - SDD253 1 2 3 SDD253 SDD253 Diode-Diode Modules -12 SDD 253 -12 SDD253 -12 -12 SDD253 SDD253