STD/SDT253 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V STD/SDT253GK08 900 STD/SDT253GK12 1300 STD/SDT253GK14 1500 STD/SDT253GK16 1700 STD/SDT253GK18 1900 Symbol Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 400 253 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 8500 9000 7000 8000 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 405000 336000 320000 240000 A2s TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=1A diG/dt=1A/us repetitive, IT=750A 250 non repetitive, IT=250A 800 i dt (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us TVJ=TVJM IT=ITAVM 120 60 W PGAV 20 W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+130 (dv/dt)cr PGM VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA tp=30us tp=500us t=1min t=1s Mounting torque (M5) Terminal connection torque (M8) Typical including screws o C 3000 3600 V~ 2.5-5/22-44 12-15/106-132 Nm/lb.in. 430 g STD/SDT253 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol IRRM Test Conditions TVJ=TVJM; VR=VRRM; VD=VDRM IDRM VT, VF VTO IT, IF=750A; TVJ=25oC o For power-loss calculations only (TVJ=140 C) IGT VGD Unit 70 mA 40 mA 1.7 V 0.85 V 1.1 rT VGT Characteristic Values o m VD=6V; TVJ=25 C TVJ=-40oC 2 3 V VD=6V; TVJ=25oC TVJ=-40oC 150 200 mA TVJ=TVJM; VD=2/3VDRM 0.25 V 10 mA IGD o IL TVJ=25 C; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us 300 mA IH TVJ=25oC; VD=6V; RGK= 150 mA 2 us 200 us 760 uC 275 A o tgd TVJ=25 C; VD=1/2VDRM IG=1A; diG/dt=1A/us tq TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM QS TVJ=125oC; IT, IF=400A; -di/dt=50A/us typ. IRM RthJC per thyristor/diode; DC current per module 0.129 0.0645 K/W RthJK per thyristor/diode; DC current per module 0.169 0.0845 K/W dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS ADVANTAGES * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits STD/SDT253 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 i2t versus time (1-10 ms) Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 2a Maximum forward current at case temperature Fig. 4 Gate trigger characteristics 3 x STD/SDT253 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Gate trigger delay time STD/SDT253 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x STD/SDT253 0.15 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 30° DC K/W ZthJC RthJC for various conduction angles d: 0.10 0.05 d RthJC (K/W) DC 180oC 120oC 60oC 30oC 0.129 0.131 0.131 0.132 0.132 Constants for ZthJC calculation: i 0.00 10-3 10-2 10-1 100 101 102 s t 0.20 Rthi (K/W) ti (s) 0.0035 0.0165 0.1091 0.099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W 30° DC ZthJK 1 2 3 RthJK for various conduction angles d: 0.15 0.10 d RthJK (K/W) DC 180oC 120oC 60oC 30oC 0.169 0.171 0.172 0.172 0.173 0.05 Constants for ZthJK calculation: 3 x STD/SDT253 0.00 10-3 10-2 10-1 i 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.0033 0.0159 0.1053 0.04 0.099 0.168 0.456 1.36