US1A - US1M - - - TDD- D A Y A 1.0 Amps. Surface Mount High Efficient Rectifiers SMA/DO-214AC Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Ultrafast recovery time for high efficiency Low forward voltage, low power loss High temperature soldering guaranteed: 260oC/10 seconds on terminals Plastic material used carries Underwriters Laboratory Classification 94V0 Mechanical Data Dimensions in inches and (millimeters) Cases: Molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.064 gram Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @ TL=110 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Symbol US1A US1B VRRM 50 100 VRMS 35 70 VDC 50 100 US1D US1G US1J US1K US1M 200 140 200 400 280 400 600 420 00 800 560 800 Units 1000 700 1000 V V V I(AV) 1.0 A IFSM 30 A VF 1.0 IR 1.7 V 75 10 uA uA nS pF 5.0 150 Trr Cj 50 15 75 RθJA 27 RθJL Operating Temperature Range TJ -55 to +150 Storage Temperature Range TSTG -55 to + 150 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area. - 272 - o C/W o o C C Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China - - - TDD- D A Y A RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 1.2 1.0 RESISTIVE OR INDUCTIVE LOAD 0.5 P.C.B. MOUNTED ON 0.2 X 0.2" (5.0X5.0mm) COPPER PAD AREAS TL=90 0C 8.3ms Single Half Sine Wave JEDEC Method 40 30 20 10 0 0 0 20 40 60 80 100 120 140 160 180 1 10 o LEAD TEMPERATURE. ( C) FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4- TYPICAL REVERSE CHARACTERISTICS 100 US1A - US1G INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) 10 1 US1J - US1M 0.1 0.01 Pulse Width=300 s 1% Duty Cycle 0.001 0.4 0.6 0.8 1.2 1.0 1.4 1.6 1.8 10 Tj=100 0C 1 Tj=25 0C 0.1 0.01 0 FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE, ( OC/W) US1J 10 A-U S1G - US1 M 1 0.1 40 60 80 100 FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE Tj=25 0C f=1.0MHz Vsig=50mVp-p US1 20 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 100 JUNCTION CAPACITANCE.(pF) 100 NUMBER OF CYCLES AT 60Hz 1 10 REVERSE VOLTAGE. (V) 100 10 1 0.1 0.01 100 0.1 1 T, PULSE DURATION, sec. 10 100 FIG.7- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China