WFF830
Wisdom Semiconductor
N-Channel MOSFET
Features
RDS(on) (Max 1.4 Ω )@VGS=10V
■
Gate Charge (Typical 25nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
2. Drain
{
Symbol
■
●
1. Gate{
◀
▲
●
●
{
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
3. Source
TO-220F
1
2
3
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS
ID
Parameter
Value
Units
Drain to Source Voltage
500
V
Continuous Drain Current(@TC = 25°C)
5.0*
A
Continuous Drain Current(@TC = 100°C)
3.0*
A
20*
A
±30
V
mJ
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
292
EAR
Repetitive Avalanche Energy
(Note 1)
8.75
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
38
W
PD
TSTG, TJ
TL
(Note 1)
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
0.3
W/°C
- 55 ~ 150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
3.31
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.50
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
10
µA
VDS = 400 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
1.15
1.40
Ω
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
680
900
pF
--
85
110
pF
--
15
20
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 5.0 A,
RG = 25 Ω
VDS = 400 V, ID = 5.0A,
VGS = 10 V
(Note 4, 5)
--
20
50
ns
--
40
90
ns
--
90
190
ns
--
45
100
ns
--
25
33
nC
--
5
--
nC
--
10
--
nC
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5.0
A
ISM
--
--
20
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 5.0 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
250
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 5.0 A,
dIF / dt = 100 A/µs
--
2.2
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.0mH, IAS = 5.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.0A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
0
10
o
25 C
o
-55 C
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
1
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
10
5
VGS = 10V
4
VGS = 20V
3
2
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
-1
0
3
6
9
10
15
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
1800
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
Capacitance [pF]
12
1200
Ciss
900
Coss
600
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
300
VGS, Gate-Source Voltage [V]
1
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
2
※ Note : ID = 5.0 A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
4
8
12
16
20
24
28
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 2.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
5
2
10
Operation in This Area
is Limited by R DS(on)
4
10 µs
ID, Drain Current [A]
100 µs
1 ms
10 ms
DC
0
10
-1
10
※ Notes :
3
2
1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
25
-2
10
0
10
1
2
10
3
10
10
50
75
100
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0 .5
10
0
0 .2
0 .1
※ N o te s :
1 . Z θ J C( t) = 3 .3 1 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .0 5
10
-1
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
125
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
ID, Drain Current [A]
1
10
10
-3
10
-2
10
-1
10
0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
10
1
150
Gate Charge Test Circuit & Waveform
V
G
S
S
am
eT
ype
asD
U
T
50K
Ω
200nF
12V
Q
g
10V
300nF
V
D
S
V
G
S
Q
gs
Q
gd
D
U
T
3m
A
C
harge
Resistive Switching Test Circuit & Waveforms
V
D
S
R
G
R
L
V
D
S
9
0
%
V
D
D
V
G
S
1
0
%
V
G
S
D
U
T
1
0
V
t
d
(
o
n
)
t
r
t
d
(
o
ff)
to
n
t
f
to
ff
Unclamped Inductive Switching Test Circuit & Waveforms
B
V
D
S
S
1
2------------------=---- L
IA
E
A
S
S
2
-V
B
V
D
S
S
D
D
L
V
D
S
B
V
D
S
S
IA
S
ID
R
G
1
0
V
tp
V
D
D
D
U
T
ID(t)
V
(t)
D
S
V
D
D
tp
T
im
e
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v /d t c o n tr o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v /d t
V
SD
B o d y D io d e
F o r w a r d V o lta g e D r o p
V
DD
Package Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
0.35 ±0.10
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
9.75 ±0.30
MAX1.47
2.76 ±0.20