SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175C MOSFET, Logic Level V(BR)DSS (V) 60 rDS(on) () ID (A) 0.022 @ VGS = 10 V 40 0.025 @ VGS = 4.5 V 40 TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB40N06-25L Top View N-Channel MOSFET SUP40N06-25L Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) TC = 100C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25C (TO-220AB and TO-263) Power Dissipation TA = 25C (TO-263)c Operating Junction and Storage Temperature Range ID 25 100 IAR 40 PD V 40 IDM EAR Unit 80 90c 3.7 A mJ W TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case 40 RthJA RthJC 80 C/W 1.6 Notes: a. Duty cycle 1%. b. See SOA curve for voltage derating. c. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70288 S-57253—Rev. C, 24-Feb-98 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB40N06-25L Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, IDS = 250 mA 1.0 2.0 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V "100 VDS = 60 V, VGS = 0 V, TJ = 175C a D i S Drain-Source On-State O S Resistance R i Forward Transconductancea rDS(on) VDS = 5 V, VGS = 10 V mA A 150 40 A VGS = 10 V, ID = 20 A 0.022 VGS = 10 V, ID = 20 A, TJ = 125C 0.043 VGS = 10 V, ID = 20 A, TJ = 175C 0.053 VGS = 4.5 V, ID = 20 A 0.025 gfs nA VDS = 15 V, ID = 20 A W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 100 Total Gate Chargec Qg 40 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec 1800 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz VDS = 30 V V, VGS = 10 V, V ID = 40 A 60 nC C 9 10 10 20 tr VDD = 30 V,, RL = 0.8 W 9 20 td(off) ID ] 40 A, VGEN = 10 V, RG = 2.5 W 28 50 7 15 tf Source-Drain Diode Ratings and Characteristics (TC = Continuous Current pF F 350 ns 25C)b Is 40 Pulsed Current ISM 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 40 A, VGS = 0 V trr IRM(REC) Qrr IF = 40 A, A di/dt di/d = 100 A/ms A/ 1.0 1.5 V 48 100 ns 6 A 0.15 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70288 S-57253—Rev. C, 24-Feb-98 SUP/SUB40N06-25L Vishay Siliconix Output Characteristics Transfer Characteristics 60 100 6V VGS = 10, 9, 8, 7 V 5V 80 I D – Drain Current (A) I D – Drain Current (A) 45 60 4V 40 20 30 TC = 125C 15 3V 25C 0 –55C 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 70 0.04 TC = –55C 50 25C 40 125C r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 60 30 20 10 0 0.03 VGS = 4.5 V VGS = 10 V 0.02 0.01 0 0 10 20 30 40 50 60 0 10 20 ID – Drain Current (A) 40 50 60 ID – Drain Current (A) Capacitance Gate Charge 10 3000 2000 V GS – Gate-to-Source Voltage (V) 2500 C – Capacitance (pF) 30 Ciss 1500 1000 500 Coss Crss 0 VDS = 30 V ID = 40 A 8 6 4 2 0 0 15 30 45 VDS – Drain-to-Source Voltage (V) Document Number: 70288 S-57253—Rev. C, 24-Feb-98 60 0 10 20 30 40 50 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB40N06-25L Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 20 A 1.5 1.0 TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Drain Current vs. Case Temperature Safe Operating Area 200 50 100 Limited by rDS(on) I D – Drain Current (A) I D – Drain Current (A) 40 30 20 100 ms 10 1 ms 10 ms 1 100 ms dc, 1 s TC = 25C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70288 S-57253—Rev. C, 24-Feb-98