FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES V ± 20 V 50 32 A A 50 VCES A 10 µs 200 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 2.6 V V 6.5 V 0.4 mA mA 200 nA 0.4 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 30 A VGE = ±15 V; RG = 39 Ω 85 50 440 50 4.6 2.2 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 30 A 2 250 nF nC RthJC RthJH with heatsink compound 1.2 0.6 K/W K/W Applications • single phaseleg - buck-boost chopper • H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • three phase bridge - AC drives - controlled rectifier 320 td(on) tr td(off) tf Eon Eoff 1200 • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 FII 50-12E Diodes Equivalent Circuits for Simulation Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C 48 25 Symbol Conditions Characteristic Values min. typ. max. VF IF = 30 A; TVJ = 25°C TVJ = 125°C IRM t rr Erec(off) RthJC RthJS Maximum Ratings 2.4 1.8 IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V A A 2.8 V V 51 180 A ns 1.8 mJ 1.6 1.3 K/W K/W (per diode) Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA pin - pin pin - backside metal -55...+150 -55...+125 °C °C 2500 V~ 20...120 N IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 45 mΩ Diode (typ. at TJ = 125°C) V0 = 1.26V; R0 = 15 mΩ Thermal Response IGBT Cth1 = 0.067 J/K; Rth1 = 0.108 K/W Cth2 = 0.175 J/K; Rth2 = 0.491 K/W Diode Cth1 = 0.039 J/K; Rth1 = 0.337 K/W Cth2 = 0.090 J/K; Rth2 = 0.963 K/W Characteristic Values min. typ. max. 1.7 5.5 mm mm 9 Dimensions in mm (1 mm = 0.0394") g 320 Weight Conduction © 2003 IXYS All rights reserved 2-4 FII 50-12E 120 VGE = 17 V A 120 A 100 15 V 100 IC 13 V 80 VGE = 17 V 15 V IC 13 V 80 60 60 11 V 11 V 40 40 9V 20 9V 20 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 3 4 0 6 V 7 5 1 2 3 4 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 90 A 75 120 VCE = 20 V A 100 IC 6 V 7 5 VCE IF 80 60 60 45 40 30 TVJ = 125°C TVJ = 25°C TVJ = 125°C 15 20 TVJ = 25°C 0 0 4 6 8 10 12 0 14 V 16 1 2 3 V 4 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 20 10 V K/W 15 ZthJC VGE Typ. forward characteristics of free wheeling diode diode 1 IGBT 0.1 10 0.01 5 single pulse 0.001 VCE = 600 V IC = 35 A 0 0 40 80 120 160nC 200 0.0001 0.001 0.1 1 s 10 Fig. 6 Typ. transient thermal impedance 320 Typ. turn on gate charge 0.01 t QG Fig. 5 MUBW3512E7 © 2003 IXYS All rights reserved 3-4 FII 50-12E 20 mJ 6 100 ns 90 td(on) 16 mJ 80 Eon 70 12 t 4 600 td(off) 2 30 200 10 A 60 tf 0 0 40 0 80 20 40 8 Fig. 8 4 160 mJ Eon IC Typ. turn on energy and switching times versus collector current V CE = 600 V V GE = ±15 V IC = 35 A T VJ = 125°C 6 mJ ns Eon 120 Eoff t 3 td(on) 800 V CE = 600 V V GE = ±15 V IC = 35 A TVJ = 125°C ns 600 80 2 40 1 0 0 10 400 200 Erec(off) 20 30 40 50 60 tf 70 Ω 80 0 20 30 40 50 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor 70 Ω 80 Fig.10 Typ. turn off energy and switching times versus gate resistor 350 TVJ = 125°C IF = 30 A VR = 600 V IRM 50 12 300 RG= TVJ = 125°C VR = 600 V 10 15Ω 24Ω 56Ω 70A 39Ω 250 8 200 t RR 30 150 50A 75Ω 35A Qrr [µC] 40 trr [ns] RG= I RM [A] 60 RG 70 60 t td(off) tr 2 Typ. turn off energy and switching times versus collector current Eoff 4 0 10 0 80 A 60 IC Fig. 7 400 20 0 20 1000 800 t 40 RG = 39 Ω T VJ = 125°C Erec(off) 0 Eoff RG = 39 Ω T VJ = 125°C 50 V CE = 600 V V GE = ±15 V Eon 4 Eoff 1200 ns 60 tr 8 V CE = 600 V V GE = ±15 V 6 IF = 4 20 100 10 50 15A 7,5A 0 0 200 400 600 800 1000 1200 1400 -di F /dt [A/µs] 0 1800 0 0 200 400 600 800 1000 -diF /dt [A/µs] 1200 1400 1600 1800 Fig. 12 Typ. turn off characteristics of free wheeling diode 320 Fig. 11 Typ. turn off characteristics of free wheeling diode 1600 2 © 2003 IXYS All rights reserved 4-4