THYRISTOR MODULE AK25HB120/160 UL;E76102 （M） Power ThyristorModule AK25HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available, and electrically isolated mounting base make your mechanical design easy. 93.5max 80 2-φ6.5 2 1 K2 G2 3 K1 G1 13 26max （Applications） AC/DC motor drives Heater controls Light dimmers Static switches 16.5 23 23 3-M5 Internal Configurations G2 K2 21 110TAB 30max Isolated mounting base ● IT（AV）25A, IT（RMS）55A, ITSM 500A ● di/dt 100 A/μs ● dv/dt 500V/μs A2･K1 3 1 A1K2 K1 G1 2 Unit：A ■Maximum Ratings （Tj＝25℃ unless otherwise specified） Symbol Item VDRM Repetitive Peak Off-State Voltage Symbol IT（AV） Ratings AK25HB120 1200 Item Conditions Average On-State Current Single phase, half wave, 180°conduction, Tc：94℃ IT（RMS） R.M.S. On-State Current Tc：94℃ ITSM Surge On-State Current 1／cycle, 2 It Value for one cycle of surge current It 2 2 Unit AK25HB160 1600 50Hz/60Hz, peak value, non-reqetitive V Ratings Unit 25 A 55 A 450/500 1000 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 1 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage（Forward） 10 V VRGM Peak Gate Voltage（Reverse） 5 V IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Critical Rate of Rise of On-State Current 2500 V Tj Operating Junction Temperature −40 to ＋125 ℃ Storage Temperature Tstg Isolation Breakdown Voltage （R.M.S.） A.C. 1 minute Mounting Torque 100 A/μs di/dt VISO −40 to ＋125 ℃ Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M5） 2.7（28） N･ｍ （㎏f･B） 170 g Ratings Unit Mass Recommended Value 1.5-2.5（15-25） Typical Value ■Electrical Characteristics Symbol Item Conditions IDRM Repetitive Peak Off-State Current, max. at VDRM, Single phase, half wave, Tj＝125℃ VTM Peak On-State Voltage, max. On-State Current 75A, Tj＝125℃ Inst. measurement 1.60 V IGT/VGT VGD Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Tj＝25℃，IT＝1A，VD＝6V 50/2 0.25 mA/V V Turn On Time, max. IT＝25A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃，VD＝2／3VDRM，Exponential Holding Current, typ. Tj＝25℃ Lutching Current, typ. tgt dv/dt IH IL Rth（j-c） Thermal Impedance, max. SanRex Tj＝125℃，VD＝1／2VDRM 8 mA 10 μs 500 V/μs 50 mA Tj＝25℃ 100 mA Junction to case, per 1／2 Module 0.80 Junction to case, per 1 Module 0.40 wave. ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] AK25HB120/160 Gate Characteristics ２ Ga te Po we （ r １０２ 3W ） ５ 125℃ ２ 25℃ −30℃ ２ １０２ ５ ２ ５ １０３ ２ Tj＝125℃ １０２ ５ ２ １０１ ５ Maximum Gate Voltage that will not trigger any unit（0.25V） ー１ １０ １０１ On-State Voltage max ２ ２ ５ ０． ５ １． ０ Gate Current（mA） Allowable Case Temperature（℃） Average On-State Current Vs Power Dissipation （Single phase half wave） Power Dissipation（W） ６０ １４０ Per one element ５０ θ＝30゜ 2 ２０ 。 360 : Conduction Angle １０ ０ ０ １０ ２０ ３０ ４０ ５０ 2 。 360 : Conduction Angle ８０ ６０ ２０ １０ Transient Thermal Impedance θj-c（℃/W） Surge On-State Current（A） １００ ２ 60Hz 50Hz ５ １０ ２０ ５０ １００ W１；Bidirectional connection ld(Ar.m.s) Id（RMS） Conduction Angle 180°W3 ２００ Rth:1.0C/W Rth:0.8C/W Rth:0.6C/W Rth:0.4C/W Rth:0.1C/W １５０ １００ ９０ W1 １００ ５０ ０ ０ １１０ ２５ ５０ ７５ Output Current（A） １２０ １２５ ０ ２５ ５０ ７５ １００ １２５ Ambient Temperature（℃） Allowable Case Temperature（℃） Time（cycles） Output Current ５０ Junction to Case Per Perone oneelement element ０． ３ １００ ２ ４０ ５ １０１ ０． ６ ０ １ ３０ Transient Thermal Impedance ０． ９ ４００ Total Power Dissipation（W） ２０ Average On-State Current（A） Per one element Tj＝25℃ start ２００ D.C. θ＝30゜ θ＝90゜ θ＝180゜ θ＝60゜ θ＝120゜ ４０ ０ Surge On-State Current Rating （Non-Repetitive） ３００ ３． ０ Per one element Average On-State Current（A） ５００ ２． ５ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） １００ θ＝180゜ θ＝120゜ θ＝90゜ θ＝60゜ ３０ ２５０ ２． ０ １２０ D.C. ４０ ６００ １.５ On-State Voltage（V） ０ １０ー３ ２ ５ １０ー２ ２ Ｗ３；Three phase bidiretional connection Rth:1.0C/W ５ １０ー１ ２ Time t（sec） Rth:0.1C/W ５ １００ RMS On-State Current Vs Allowable Case Temperature １３０ １２０ １０ θ＝30゜ １ θ＝60゜ θ＝90゜ ００ θ＝120゜１ θ＝180゜ １００ Rth:0.8C/W ９０ １１０ ８０ Rth:0.6C/W ７０ Rth:0.4C/W １２０ １２５ Id（Ar.m.s.） ６０ ５０ ０ ２５ ５０ ７５ １００ １２５０ １０ ２０ ３０ ４０ ５０ ６０ ７０ Ambient Temperature（℃） RMS On-State Current（A） Allowable Case Temperature（℃） Av er ag e ５ On-State Current（A） P Po eak we Ga （ t r 10 e W ） Peak Forward Gate Voltag（10V） １０３ Gate Voltage（V） ５ Peak Gate Current（3A） ２