HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC • 40A, 600V at TC = 25oC • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. JEDEC STYLE TO-247 E C G Formerly developmental type TA49016. Ordering Information PART NUMBER PACKAGE HGTG20N60B3D TO-247 BRAND G20N60B3D COLLECTOR (BOTTOM SIDE METAL) NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTG20N60B3D Rev. B HGTG20N60B3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60B3D UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 600 V Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 40 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 20 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 165 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG -40 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360V, TC = 125oC, RG = 25Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA SYMBOL BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = IC110 , VGE = 15V TC = 25oC IGES VGE = ±20V TC = 150oC VGE = 15V, RG = 10Ω, L = 45µH TYP MAX 600 - - UNITS V - - 250 µA TC = 150oC - - 2.0 mA TC = 25oC - 1.8 2.0 V TC = 150oC - 2.1 2.5 V 3.0 5.0 6.0 V IC = 250µA, VCE = VGE SSOA MIN - - ±100 nA VCE = 480V 100 - - A VCE = 600V 30 - - A IC = IC110 , VCE = 0.5 BVCES - 8.0 - V On-State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 80 105 nC VGE = 20V - 105 135 nC Current Turn-On Delay Time td(ON)I TC = 150oC, ICE = IC110 VCE = 0.8 BVCES, VGE = 15V RG = 10Ω, L = 100µH - 25 - ns - 20 - ns - 220 275 ns - 140 175 ns - 475 - µJ µJ Gate to Emitter Plateau Voltage Current Rise Time Current Turn-Off Delay Time VGEP trI td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time Thermal Resistance trr RθJC - 1050 - IEC = 20A - 1.5 1.9 V IEC = 20A, dIEC/dt = 100A/µs - - 55 ns IEC = 1A, dIEC/dt = 100A/µs - - 45 ns IGBT - - 0.76 oC/W Diode - - 1.2 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. ©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B HGTG20N60B3D ICE , COLLECTOR TO EMITTER CURRENT (A) 100 100 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VCE = 10V 80 TC = 150oC 60 TC = 25oC 40 -40ooC C TTCC == -40 20 0 4 6 8 10 12 VGE = 9V 60 VGE = 8.5V 40 VGE = 8.0V 20 VGE = 7.5V VGE = 7.0V 0 0 2 VGE = 15V 30 20 10 0 125 150 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 40 100 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V CIES 3000 2000 COES 1000 CRES 0 15 20 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) FREQUENCY = 1MHz 10 TC = 25oC 80 60 TC = -40oC 40 TC = 150oC 20 0 0 1 2 3 4 5 FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5000 5 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE 0 8 100 TC , CASE TEMPERATURE (oC) 4000 6 FIGURE 2. SATURATION CHARACTERISTICS 50 75 4 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 50 VGE = 10V PULSE DURATION = 250µs DUTY CYCLE <0.5%, TC = 25oC 80 VGE , GATE TO EMITTER VOLTAGE (V) 25 12V VGE = 15V 600 15 480 12 VCE = 600V 9 360 VCE = 400V 240 6 VCE = 200V TC = 25oC Ig(REF) = 1.685mA 120 RL = 30Ω 0 0 20 40 60 QG , GATE CHARGE (nC) 80 3 VGE , GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 0 100 FIGURE 6. GATE CHARGE WAVEFORMS HGTG20N60B3D Rev. B HGTG20N60B3D Typical Performance Curves 500 TJ = 150oC, RG = 10Ω, L = 100µH td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) 100 (Continued) 50 40 30 VCE = 480V, VGE = 15V 20 10 300 VCE = 480V, VGE = 15V 200 100 0 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 100 0 40 FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURREN T 40 1000 TJ = 150oC, RG = 10Ω, L = 100µH TJ = 150oC, RG = 10Ω, L = 100µH VCE = 480V, VGE = 15V 10 1 VCE = 480V, VGE = 15V 100 10 0 10 20 30 0 40 ICE , COLLECTOR TO EMITTER CURRENT (A) 1400 20 30 40 FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 2500 EOFF, TURN-OFF ENERGY LOSS (µJ) TJ = 150oC, RG = 10Ω, L = 100µH 1200 1000 800 VCE = 480V, VGE = 15V 600 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT EON , TURN-ON ENERGY LOSS (µJ) 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) TJ = 150oC, RG = 10Ω, L = 100µH 400 400 200 0 TJ = 150oC, RG = 10Ω, L = 100µH 2000 1500 VCE = 480V, VGE = 15V 1000 500 0 0 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 40 0 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 40 FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG20N60B3D Rev. B HGTG20N60B3D fMAX , OPERATING FREQUENCY (kHz) 500 (Continued) TJ = 150oC, TC = 75oC, VGE = 15V RG = 10Ω, L = 100mH VCE = 480V 100 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON +EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 0.76oC/W 10 5 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 120 TC = 150oC, VGE = 15V, RG = 10Ω 100 80 60 40 20 0 0 100 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURREN T 300 400 500 600 700 FIGURE 14. SWITCHING SAFE OPERATING AREA 0.5 0.2 RESPONSE ZθJC , NORMALIZED THERMAL 100 200 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 10-1 0.1 0.05 t1 0.02 PD 0.01 10-2 t2 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-3 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 50 80 tr, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 100 150oC 60 100oC 40 25oC 20 0 0 0.5 1.0 1.5 2.0 VEC , FORWARD VOLTAGE (V) FIGURE 16. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP ©2001 Fairchild Semiconductor Corporation 2.5 TC = 25oC, dI EC/dt = 100A/µs trr 40 30 ta 20 tb 10 0 1 5 10 IEC , FORWARD CURRENT (A) 20 FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT HGTG20N60B3D Rev. B HGTG20N60B3D Test Circuit and Waveform 90% L = 100µH RHRP3060 10% VGE EOFF RG = 10Ω EON VCE 90% + - VDD = 480V ICE 10% td(OFF)I trI tfI FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT td(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and discharge procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF ; i.e. the collector current equals zero (ICE = 0). HGTG20N60B3D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4